Abstract:
A party popper contains: a cylinder, a sealing element, a drive element, a flexible fitting element, and a weaken structure. The cylinder includes a first segment and a second segment. The sealing element is a film and is configured to close the second segment. The multiple streamers are filled in the cylinder. A diameter of the drive element is equal to a diameter of the cylinder. The flexible fitting element is made of flexible material with low elastic modulus, and the flexible fitting element includes a cap, a neck section, and a head. The weaken structure surrounds the neck section, and a pulling length is defined to pull off the weaken structure by pulling the weaken structure from the head to the neck section and the cap, such that the weaken structure is pulled off to remove the neck section and the head from the cap.
Abstract:
A ribbon dispenser includes a body with a front cover. A cylinder is rotatably located in the body and has multiple chambers in which ribbons are received. An inlet is defined through the rear end of each chamber. A striking unit is located in the body and located behind the cylinder to introduce air into the chambers via the inlets. A revolving unit is connected to the cylinder to revolve the cylinder. A rigger is pivotably connected to the body has a driving portion to drive the striking unit. A stud protrudes from one side of the trigger so as to drive the revolving unit. The ribbons are ejected out from the body when the striking unit introduces air into the chambers. The cylinder is revolved to allow the ribbons in each room are ejected in sequence.
Abstract:
A magnetic tunnel junction (MTJ) etching process uses a sacrifice layer. An MTJ cell structure includes an MTJ stack with a first magnetic layer, a second magnetic layer, and a tunnel barrier layer in between the first magnetic layer and the second magnetic layer, and a sacrifice layer adjacent to the second magnetic layer, where the sacrifice layer protects the second magnetic layer in the MTJ stack from oxidation during an ashing process. The sacrifice layer does not increase a resistance of the MTJ stack. The sacrifice layer can be made of Mg, Cr, V, Mn, Ti, Zr, Zn, or any alloy combination thereof, or any other suitable material. The sacrifice layer can be multi-layered and/or have a thickness ranging from 5 Å to 400 Å. The MTJ cell structure can have a top conducting layer over the sacrifice layer.
Abstract:
Disclosed herein is an improved memory device, and related methods of manufacturing, wherein the area occupied by a conventional landing pad is significantly reduced to around 50% to 10% of the area occupied by conventional landing pads. This is accomplished by removing the landing pad from the cell structure, and instead forming a conductive via structure that provides the electrical connection from the memory stack or device in the structure to an under-metal layer. By forming only this via structure, rather than separate vias formed on either side of a landing pad, the overall width occupied by the connective via structure from the memory stack to an under-metal layer is substantially reduced, and thus the via structure and under-metal layer may be formed closer to the memory stack (or conductors associated with the stack) so as to reduce the overall width of the cell structure.
Abstract:
An STT MTJ cell is formed with a magnetic anisotropy of its free and reference layers that is perpendicular to their planes of formation. The reference layer of the cell is an SAF multilayered structure with a single magnetic domain to enhance the bi-stability of the magnetoresistive states of the cell. The free layer of the cell is etched back laterally from the reference layer, so that the fringing stray field of the reference layer is no more than 15% of the coercivity of the free layer and has minimal effect on the free layer.
Abstract:
A vibration-actuated micro mirror device comprises a substrate, a swinging frame, a reflection mirror, and a vibration part. The swinging frame is rotatably arranged within a first accommodating space formed on the substrate. The reflection mirror is rotatably arranged within a second accommodating space formed on the swinging frame. The vibration part further comprises a plate coupled to the substrate, and a first and a second vibration structures. The first and the second vibration structures are coupled to the plate and are spaced a distance away from each other, wherein the first vibration structure receives a first driving signal having a first frequency and the second vibration structure receives a second driving signal having a second frequency smaller than the first frequency, thereby enabling the swinging frame to rotate about the first axis while enabling the reflection mirror to rotate about the second axis.
Abstract:
A planar inverted-F antenna for use in a wireless network device comprises a connecting member and two radiators. The connecting member has at least one input end and at least one ground end. Each radiator has a first end portion perpendicularly connected to one of the two ends of the connecting member, and the two radiators are parallel and correspond in shape to each other. Each radiator further has an L-shaped notch and thus forms a barb. A second end portion of each radiator is bent to form an engaging end which is generally parallel to the connecting member and configured to fasten with a substrate of the wireless network device.
Abstract:
A method of operating magneto-resistive random access memory (MRAM) cells includes providing an MRAM cell, which includes a magnetic tunneling junction (MTJ) device; and a selector comprising a source-drain path serially coupled to the MTJ device. The method further includes applying an overdrive voltage to a gate of the selector to turn on the selector.
Abstract:
A motion compensation de-interlacing image processing apparatus is provided. The apparatus includes a motion compensation module, a still compensation module, a motion detection module, and a de-interlacing blending module. The motion compensation module generates a motion compensation pixel according to at least one of a current field, a previous field, and a next field of a target pixel to be interpolated. The still compensation module generates a still compensation pixel according to the previous field and the next field of the target pixel. The motion detection module determines a motion index according to the previous field and the next field of the target pixel. The de-interlacing blending module generates the target pixel by weighted averaging the motion compensation pixel and the still compensation pixel according to the motion index.
Abstract:
The present disclosure provides a non-volatile memory device. A memory device includes a first magnetic element having a fixed magnetization. The memory device also includes a second magnetic element having a non-fixed magnetization. The memory device further includes a barrier layer between the first and second magnetic elements. A unidirectional current source is electrically coupled to the first and second magnetic elements. The current source is configured to provide a first current to the first and second memory elements. The first current has a first current density and is in a first direction. The current source is also configured to provide a second current to the first and second magnetic elements. The second current has a second current density, different than the first current density, and is in the first direction. The first and second currents cause the non-fixed magnetization of the second magnetic element to toggle between substantially parallel to the fixed magnetization of the first magnetic element and between substantially antiparallel to the fixed magnetization of the first magnetic element.