公开(公告)号：US06824217B1

公开(公告)日：2004-11-30

申请号：US10663018

申请日：2003-09-16

申请人： Yu-Jen Wang

发明人： Yu-Jen Wang

IPC分类号： A47C754

CPC分类号： A47C1/03 ,  B60N2/77

摘要： An armrest assembly includes a lower part defining a lower chamber, and an upper part defining an upper chamber therein. An abutting member is disposed in the upper chamber. A cylinder-and-piston unit includes a cylinder extending into the upper chamber to abut against the abutting member, and a piston mounted securely in the lower chamber and telescopically extending into the cylinder. A locking member includes a spring-biased button projecting from the cylinder, extending through the abutting member and into the upper chamber, and pressible to move between a locked position, in which, the cylinder is locked by the locking member against axial movement relative to the piston, and an unlocked position, in which, the cylinder is axially movable relative to the piston.

摘要翻译： 扶手组件包括限定下室的下部和在其中限定上室的上部。 抵靠构件设置在上腔室中。 气缸和活塞单元包括延伸到上室中以抵靠抵接构件的气缸，以及牢固地安装在下室中并可伸缩地延伸到气缸内的活塞。 锁定构件包括从气缸突出的弹簧偏置按钮，延伸穿过邻接构件并进入上腔室，并且可压缩以在锁定位置之间移动，在锁定位置中，气缸被锁定构件锁定，从而抵抗相对于 活塞和解锁位置，其中气缸相对于活塞可轴向移动。

公开(公告)号：US09086252B2

公开(公告)日：2015-07-21

申请号：US14049231

申请日：2013-10-09

申请人： Yu-Jen Wang

发明人： Yu-Jen Wang

IPC分类号： F41B11/642 ,  F41B11/80 ,  F41B11/54

CPC分类号： F41B11/80 ,  F41B11/54 ,  F41B11/89

摘要： A ribbon dispenser includes a body with a front cover. A cylinder is rotatably located in the body and has multiple chambers in which ribbons are received. An inlet is defined through the rear end of each chamber. A striking unit is located in the body and located behind the cylinder to introduce air into the chambers via the inlets. A revolving unit is connected to the cylinder to revolve the cylinder. A rigger is pivotably connected to the body has a driving portion to drive the striking unit. A stud protrudes from one side of the trigger so as to drive the revolving unit. The ribbons are ejected out from the body when the striking unit introduces air into the chambers. The cylinder is revolved to allow the ribbons in each room are ejected in sequence.

摘要翻译： 色带分配器包括具有前盖的主体。 圆柱体可旋转地位于主体中并且具有多个腔室，其中容纳带。 通过每个室的后端限定入口。 一个醒目的单元位于机身后面，位于气缸后面，通过入口将空气引入腔室。 旋转单元连接到气缸以使气缸旋转。 枢轴连接到主体上的操纵器具有驱动打击单元的驱动部分。 螺柱从触发器的一侧突出以驱动旋转单元。 当打击单元将空气引入室内时，带状物从体内排出。 圆筒被旋转以允许每个房间中的丝带依次排出。

公开(公告)号：US08629518B2

公开(公告)日：2014-01-14

申请号：US12828593

申请日：2010-07-01

申请人： Yu-Jen Wang ,  Ya-Chen Kao ,  Chun-Jung Lin

发明人： Yu-Jen Wang ,  Ya-Chen Kao ,  Chun-Jung Lin

IPC分类号： H01L29/82

CPC分类号： H01L43/12 ,  H01L43/08

摘要： A magnetic tunnel junction (MTJ) etching process uses a sacrifice layer. An MTJ cell structure includes an MTJ stack with a first magnetic layer, a second magnetic layer, and a tunnel barrier layer in between the first magnetic layer and the second magnetic layer, and a sacrifice layer adjacent to the second magnetic layer, where the sacrifice layer protects the second magnetic layer in the MTJ stack from oxidation during an ashing process. The sacrifice layer does not increase a resistance of the MTJ stack. The sacrifice layer can be made of Mg, Cr, V, Mn, Ti, Zr, Zn, or any alloy combination thereof, or any other suitable material. The sacrifice layer can be multi-layered and/or have a thickness ranging from 5 Å to 400 Å. The MTJ cell structure can have a top conducting layer over the sacrifice layer.

摘要翻译： 磁隧道结（MTJ）蚀刻工艺使用牺牲层。 MTJ单元结构包括在第一磁性层和第二磁性层之间的具有第一磁性层，第二磁性层和隧道势垒层的MTJ堆叠以及与第二磁性层相邻的牺牲层，其中牺牲 层在灰化过程中保护MTJ堆叠中的第二磁性层免受氧化。 牺牲层不会增加MTJ堆叠的电阻。 牺牲层可以由Mg，Cr，V，Mn，Ti，Zr，Zn或其任何合金组合或任何其它合适的材料制成。 牺牲层可以是多层的和/或具有从5到400的厚度。 MTJ单元结构可以在牺牲层上方具有顶部导电层。

公开(公告)号：US08558297B2

公开(公告)日：2013-10-15

申请号：US13308065

申请日：2011-11-30

申请人： Jhon Jhy Liaw ,  Yu-Jen Wang ,  Chia-Shiung Tsai

发明人： Jhon Jhy Liaw ,  Yu-Jen Wang ,  Chia-Shiung Tsai

IPC分类号： H01L27/108 ,  H01L21/4763

CPC分类号： H01L43/12 ,  B82Y10/00 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  H01L27/228 ,  H01L43/08

摘要： Disclosed herein is an improved memory device, and related methods of manufacturing, wherein the area occupied by a conventional landing pad is significantly reduced to around 50% to 10% of the area occupied by conventional landing pads. This is accomplished by removing the landing pad from the cell structure, and instead forming a conductive via structure that provides the electrical connection from the memory stack or device in the structure to an under-metal layer. By forming only this via structure, rather than separate vias formed on either side of a landing pad, the overall width occupied by the connective via structure from the memory stack to an under-metal layer is substantially reduced, and thus the via structure and under-metal layer may be formed closer to the memory stack (or conductors associated with the stack) so as to reduce the overall width of the cell structure.

摘要翻译： 这里公开了一种改进的存储器件和相关的制造方法，其中传统的着陆焊盘占据的面积显着地减少到传统的着陆焊盘占据的面积的大约50％到10％。 这是通过从电池结构中去除着陆焊盘而实现的，而是形成导电通孔结构，其提供从结构中的存储器堆或器件到下金属层的电连接。 通过仅形成该通孔结构，而不是形成在着陆焊盘的任一侧上的分离的通孔，结构通孔结构从存储器堆叠到下金属层占据的总宽度大大减小，因此通孔结构和下面 金属层可以形成为更靠近存储器堆叠（或与堆叠相关联的导体），以便减小电池结构的整体宽度。

公开(公告)号：US20130240963A1

公开(公告)日：2013-09-19

申请号：US13421963

申请日：2012-03-16

申请人： Robert Beach ,  Guenole Jan ,  Yu-Jen Wang ,  Witold Kula ,  Po-Kang Wang

发明人： Robert Beach ,  Guenole Jan ,  Yu-Jen Wang ,  Witold Kula ,  Po-Kang Wang

IPC分类号： H01L29/82 ,  H01L21/8239

CPC分类号： H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/12

摘要： An STT MTJ cell is formed with a magnetic anisotropy of its free and reference layers that is perpendicular to their planes of formation. The reference layer of the cell is an SAF multilayered structure with a single magnetic domain to enhance the bi-stability of the magnetoresistive states of the cell. The free layer of the cell is etched back laterally from the reference layer, so that the fringing stray field of the reference layer is no more than 15% of the coercivity of the free layer and has minimal effect on the free layer.

摘要翻译： 形成具有垂直于其形成平面的游离和参考层的磁各向异性的STT MTJ电池。 单元的参考层是具有单个磁畴的SAF多层结构，以增强单元的磁阻状态的双稳定性。 电池的自由层从参考层横向回蚀刻，使得参考层的边缘杂散场不超过自由层的矫顽力的15％，并且对自由层的影响最小。

公开(公告)号：US08508827B2

公开(公告)日：2013-08-13

申请号：US13667093

申请日：2012-11-02

申请人： Yu-Jen Wang ,  Chien-Shien Yeh ,  Chung-De Chen ,  Hung-Chung Li

发明人： Yu-Jen Wang ,  Chien-Shien Yeh ,  Chung-De Chen ,  Hung-Chung Li

IPC分类号： G02B26/08

CPC分类号： G02B26/0858 ,  G02B26/101

摘要： A vibration-actuated micro mirror device comprises a substrate, a swinging frame, a reflection mirror, and a vibration part. The swinging frame is rotatably arranged within a first accommodating space formed on the substrate. The reflection mirror is rotatably arranged within a second accommodating space formed on the swinging frame. The vibration part further comprises a plate coupled to the substrate, and a first and a second vibration structures. The first and the second vibration structures are coupled to the plate and are spaced a distance away from each other, wherein the first vibration structure receives a first driving signal having a first frequency and the second vibration structure receives a second driving signal having a second frequency smaller than the first frequency, thereby enabling the swinging frame to rotate about the first axis while enabling the reflection mirror to rotate about the second axis.

摘要翻译： 振动致动的微反射镜装置包括基板，摆动框架，反射镜和振动部件。 摆动框架可旋转地布置在形成在基板上的第一容纳空间内。 反射镜可旋转地布置在形成在摆动框架上的第二容纳空间内。 振动部分还包括联接到基板的板，以及第一和第二振动结构。 第一振动结构和第二振动结构耦合到板并且彼此间隔开一定距离，其中第一振动结构接收具有第一频率的第一驱动信号，并且第二振动结构接收具有第二频率的第二驱动信号 小于第一频率，从而使得摆动框架能够围绕第一轴线旋转，同时使得反射镜能够围绕第二轴线旋转。

公开(公告)号：US20120281464A1

公开(公告)日：2012-11-08

申请号：US13550262

申请日：2012-07-16

申请人： Shine Chung ,  Tao-Wen Chung ,  Chun-Jung Lin ,  Yu-Jen Wang ,  Hung-Sen Wang

发明人： Shine Chung ,  Tao-Wen Chung ,  Chun-Jung Lin ,  Yu-Jen Wang ,  Hung-Sen Wang

IPC分类号： G11C11/16

CPC分类号： G11C11/16 ,  G11C8/08 ,  G11C11/1657 ,  G11C11/1659

摘要： A method of operating magneto-resistive random access memory (MRAM) cells includes providing an MRAM cell, which includes a magnetic tunneling junction (MTJ) device; and a selector comprising a source-drain path serially coupled to the MTJ device. The method further includes applying an overdrive voltage to a gate of the selector to turn on the selector.

摘要翻译： 操作磁阻随机存取存储器（MRAM）单元的方法包括提供包括磁隧道结（MTJ）装置的MRAM单元; 以及选择器，包括串联耦合到MTJ器件的源极 - 漏极路径。 该方法还包括将过驱动电压施加到选择器的门以接通选择器。

公开(公告)号：US20120170657A1

公开(公告)日：2012-07-05

申请号：US13337453

申请日：2011-12-27

申请人： Yu-Jen Wang ,  Chung-Yi Chen

发明人： Yu-Jen Wang ,  Chung-Yi Chen

IPC分类号： H04N7/32 ,  H04N7/26

CPC分类号： H04N7/012 ,  H04N7/014

摘要： A motion compensation de-interlacing image processing apparatus is provided. The apparatus includes a motion compensation module, a still compensation module, a motion detection module, and a de-interlacing blending module. The motion compensation module generates a motion compensation pixel according to at least one of a current field, a previous field, and a next field of a target pixel to be interpolated. The still compensation module generates a still compensation pixel according to the previous field and the next field of the target pixel. The motion detection module determines a motion index according to the previous field and the next field of the target pixel. The de-interlacing blending module generates the target pixel by weighted averaging the motion compensation pixel and the still compensation pixel according to the motion index.

摘要翻译： 提供一种运动补偿去隔行图像处理装置。 该装置包括运动补偿模块，静止补偿模块，运动检测模块和去隔行混合模块。 运动补偿模块根据要内插的目标像素的当前场，先前场和下一场中的至少一个产生运动补偿像素。 静止补偿模块根据目标像素的前一场和下一场产生静止补偿像素。 运动检测模块根据目标像素的前一场和下一个场来确定运动索引。 去隔行混合模块通过根据运动索引对运动补偿像素和静止补偿像素进行加权平均来生成目标像素。

公开(公告)号：US08213220B2

公开(公告)日：2012-07-03

申请号：US12687608

申请日：2010-01-14

申请人： Yu-Jen Wang ,  Hsu-Chen Cheng ,  Denny Tang

发明人： Yu-Jen Wang ,  Hsu-Chen Cheng ,  Denny Tang

IPC分类号： G11C11/00

CPC分类号： G11C11/1693 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675

摘要： The present disclosure provides a non-volatile memory device. A memory device includes a first magnetic element having a fixed magnetization. The memory device also includes a second magnetic element having a non-fixed magnetization. The memory device further includes a barrier layer between the first and second magnetic elements. A unidirectional current source is electrically coupled to the first and second magnetic elements. The current source is configured to provide a first current to the first and second memory elements. The first current has a first current density and is in a first direction. The current source is also configured to provide a second current to the first and second magnetic elements. The second current has a second current density, different than the first current density, and is in the first direction. The first and second currents cause the non-fixed magnetization of the second magnetic element to toggle between substantially parallel to the fixed magnetization of the first magnetic element and between substantially antiparallel to the fixed magnetization of the first magnetic element.

摘要翻译： 本公开提供了一种非易失性存储器件。 存储器件包括具有固定磁化强度的第一磁性元件。 存储器件还包括具有非固定磁化强度的第二磁性元件。 存储器件还包括在第一和第二磁性元件之间的阻挡层。 单向电流源电耦合到第一和第二磁性元件。 当前源被配置为向第一和第二存储器元件提供第一电流。 第一电流具有第一电流密度并且处于第一方向。 电流源还被配置为向第一和第二磁性元件提供第二电流。 第二电流具有与第一电流密度不同的第二电流密度，并且处于第一方向。 第一和第二电流导致第二磁性元件的非固定磁化在基本上平行于第一磁性元件的固定磁化之间以及基本上反平行于第一磁性元件的固定磁化之间翻转。

公开(公告)号：US20120127788A1

公开(公告)日：2012-05-24

申请号：US13364955

申请日：2012-02-02

申请人： Shine Chung ,  Hung-Sen Wang ,  Tao-Wen Chung ,  Chun-Jung Lin ,  Yu-Jen Wang

发明人： Shine Chung ,  Hung-Sen Wang ,  Tao-Wen Chung ,  Chun-Jung Lin ,  Yu-Jen Wang

IPC分类号： G11C11/16

CPC分类号： G11C11/1677 ,  G11C11/1675

摘要： A circuit includes magneto-resistive random access memory (MRAM) cell and a control circuit. The control circuit is electrically coupled to the MRAM cell, and includes a current source configured to provide a first writing pulse to write a value into the MRAM cell, and a read circuit configured to measure a status of the MRAM cell. The control circuit is further configured to verify whether a successful writing is achieved through the first writing pulse.

摘要翻译： 电路包括磁阻随机存取存储器（MRAM）单元和控制电路。 控制电路电耦合到MRAM单元，并且包括被配置为提供第一写入脉冲以将值写入MRAM单元的电流源和被配置为测量MRAM单元的状态的读取电路。 控制电路还被配置为验证通过第一写入脉冲是否实现了成功写入。