公开(公告)号：US20050201022A1

公开(公告)日：2005-09-15

申请号：US10796387

申请日：2004-03-09

申请人： Cheng Horng ,  Ru-Ying Tong

发明人： Cheng Horng ,  Ru-Ying Tong

IPC分类号： G01R33/09 ,  G11B5/127 ,  G11B5/33 ,  G11B5/39 ,  H01F10/16 ,  H01F10/32 ,  H01F41/18 ,  H01F41/30 ,  H01L43/08 ,  H01L43/12

CPC分类号： H01F10/3272 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  G11B5/3948 ,  H01F10/3259 ,  H01F10/3263 ,  H01F41/306 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： A CPP-GMR spin value sensor structure with an improved MR ratio and increased resistance is disclosed. All layers except certain pinned layers, copper spacers, and a Ta capping layer are oxygen doped by adding a partial O2 pressure to the Ar sputtering gas during deposition. Oxygen doped CoFe free and pinned layers are made slightly thicker to offset a small decrease in magnetic moment caused by the oxygen dopant. Incorporating oxygen in the MnPt AFM layer enhances the exchange bias strength. An insertion layer such as a nano-oxide layer is included in one or more of the free, pinned, and spacer layers to increase interfacial scattering. The thickness of all layers except the copper spacer may be increased to enhance bulk scattering. A CPP-GMR single or dual spin valve of the present invention has up to a threefold increase in resistance and a 2 to 3% increase in MR ratio.

摘要翻译： 公开了具有改进的MR比和增加的电阻的CPP-GMR自旋值传感器结构。 除了某些被钉扎层，铜间隔物和Ta覆盖层之外的所有层通过在沉积期间向Ar溅射气体添加部分O 2 O 2压力而进行氧掺杂。 氧掺杂的CoFe自由和被钉扎层被制成稍微更厚以抵消由氧掺杂剂引起的小的磁矩的减小。 在MnPt AFM层中掺入氧增强了交换偏压强度。 诸如纳米氧化物层之类的插入层被包括在一个或多个游离，钉扎和间隔层中以增加界面散射。 除了铜间隔物之外的所有层的厚度可以增加以增加体散射。 本发明的CPP-GMR单自旋阀或双自旋阀的电阻增加了三倍，MR比增加了2〜3％。

公开(公告)号：US20050190498A1

公开(公告)日：2005-09-01

申请号：US10788687

申请日：2004-02-26

申请人： Hoa Do ,  Eric Fullerton ,  David Margulies ,  Andreas Moser

发明人： Hoa Do ,  Eric Fullerton ,  David Margulies ,  Andreas Moser

IPC分类号： G11B5/64 ,  G11B5/65 ,  G11B5/66 ,  G11B5/738 ,  G11B5/82 ,  H01F10/16

CPC分类号： G11B5/66 ,  G11B5/656

摘要： A magnetic recording disk has an antiferromagnetically-coupled (AFC) structure that has three lower ferromagnetic layers (LL1, LL2, LL3) and an upper ferromagnetic layer (UL), all four ferromagnetic layers being antiferromagnetically-coupled together across corresponding antiferromagnetically-coupling layers. The UL has a magnetization-remanence-thickness product (Mrt) greater than the Mrt each of the three lower layers LL1, LL2, LL3, and greater than the sum of the Mrt values of LL1 and LL3. The middle lower layer LL2 has an Mrt less than the Mrt of each of the other lower layers LL1 and LL3, and as a result the composite Mrt of the AFC structure is less than the composite Mrt of a conventional AFC structure having only a single lower layer. The AFC structure achieves this composite Mrt reduction without increasing the Mrt of any of the three lower layers above the maximum Mrt of the single lower layer in the conventional AFC structure.

摘要翻译： 磁记录盘具有反铁磁耦合（AFC）结构，其具有三个低铁磁层（LL1，LL2，LL3）和上铁磁层（UL），所有四个铁磁层在相应的反铁磁耦合层上反铁磁耦合在一起 。 UL具有大于三个下层LL1，LL2，LL3中的每一个的Mrt的磁化剩磁厚度乘积（Mrt），并且大于LL1和LL3的Mrt值的和。 中下层LL2的Mrt小于其他下层LL1和LL3中的每一层的Mrt，结果，AFC结构的复合材料Mrt小于仅具有单一下层LL1和LL3的常规AFC结构的复合材料Mrt 层。 AFC结构在不增加传统AFC结构中单个下层的最大Mrt以上的三个下层中的任何一个的Mrt的情况下实现了该复合Mrt的还原。

公开(公告)号：US20050186452A1

公开(公告)日：2005-08-25

申请号：US10786806

申请日：2004-02-25

申请人： Kunliang Zhang ,  Min Li ,  Rachid Sbiaa ,  Simon Liao ,  Yue Liu

发明人： Kunliang Zhang ,  Min Li ,  Rachid Sbiaa ,  Simon Liao ,  Yue Liu

IPC分类号： G11B5/39 ,  G11B5/127 ,  H01F10/16 ,  H01F10/32 ,  H01L43/08

CPC分类号： G11B5/3903 ,  Y10T428/1121 ,  Y10T428/1143 ,  Y10T428/115

摘要： A current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type and its method of formation are disclosed, the sensor including a novel laminated free layer having ultra-thin (less than 3 angstroms thickness) laminas of Fe50 Co50 (or any iron rich alloy of the form CoxFe1-x with x between 0.25 and 0.75) interspersed with thicker layers of Co90Fe10 and Cu spacer layers to produce a free layer with good coercivity, a coefficient of magnetostriction that can be varied between positive and negative values and a high GMR ratio, due to enhancement of the bulk scattering coefficient by the laminas. The configuration of the lamina and layers in periodic groupings allow the coefficient of magnetostriction to be finely adjusted and the coercivity and GMR ratio to be optimized. The sensor performance can be further improved by including layers of Cu and Fe50Co50 in the synthetic antiferromagnetic pinned layer.

摘要翻译： 公开了合成自旋阀型的电流垂直平面（CPP）巨磁阻（GMR）传感器及其形成方法，该传感器包括具有超薄（小于3埃厚度）的新型层叠自由层， Fe O 50 Co 50（或任何形式为Fe x Fe 1-x x的任何富含铁的合金）的薄片与 x在0.25和0.75之间）散布有较厚层的Co 90 N 10 N 10和Cu间隔层，以产生具有良好矫顽力的自由层，可以变化的磁致伸缩系数 在正值和负值之间，高GMR比，由于片层散体系的增强。 周期性分组中的薄层和层的配置允许精细调节磁致伸缩系数，并优化矫顽力和GMR比。 通过在合成的反铁磁性钉扎层中包含Cu和Fe 50 Co 50层，可以进一步提高传感器性能。

公开(公告)号：US20050168880A1

公开(公告)日：2005-08-04

申请号：US11091281

申请日：2005-03-28

申请人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

发明人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/16 ,  H01F10/32 ,  H01F41/14 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  G11B5/33 ,  G11B5/127

CPC分类号： H01F41/302 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272

摘要： Nano-oxide based current-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stacks are provided, together with methods for forming such stacks. Such stacks have increased resistance and enhanced magnetoresistive properties relative to CPP stacks made entirely of metallic layers. Said enhanced properties are provided by the insertion of magnetic nano-oxide layers between ferromagnetic layers and non-magnetic spacer layers, whereby said nano-oxide layers increase resistance and exhibit spin filtering properties. CPP sensor stacks of various types are provided, all having nano-oxide layers formed therein, including the spin-valve type and the synthetic antiferromagnetic pinned layer spin-valve type. Said stacks can also be formed upon each other to provide laminated stacks of different types.

公开(公告)号：US06903908B2

公开(公告)日：2005-06-07

申请号：US09853622

申请日：2001-05-14

申请人： Kazuhiko Hayashi ,  Keishi Ohashi ,  Nobuyuki Ishiwata ,  Masafumi Nakada ,  Eizo Fukami ,  Kiyokazu Nagahara ,  Hiroaki Honjo ,  Junichi Fujikata ,  Kunihiko Ishihara ,  Shigeru Mori

发明人： Kazuhiko Hayashi ,  Keishi Ohashi ,  Nobuyuki Ishiwata ,  Masafumi Nakada ,  Eizo Fukami ,  Kiyokazu Nagahara ,  Hiroaki Honjo ,  Junichi Fujikata ,  Kunihiko Ishihara ,  Shigeru Mori

IPC分类号： G01R33/02 ,  G01R31/317 ,  G01R33/09 ,  G11B5/00 ,  G11B5/39 ,  G11B5/40 ,  H01F10/16 ,  H01F10/32 ,  H01L43/08 ,  H01L43/12 ,  G11B5/11

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R31/3171 ,  G01R33/093 ,  G11B5/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/40 ,  G11B2005/3996

摘要： A magnetoresistive effect sensor uses a shielded-type magnetoresistive effect element using a magnetoresistive effect film formed by a basic configuration of a combination of a free layer, a barrier layer formed on the free layer, and a fixed layer formed on the barrier layer, wherein a sensing current flows substantially perpendicular to the magnetoresistive effect film, and wherein an amorphous material or a microcrystalline material is used in a lower shield.

摘要翻译： 磁阻效应传感器使用屏蔽型磁阻效应元件，其使用由自由层，形成在自由层上的阻挡层和形成在阻挡层上的固定层的组合的基本结构形成的磁阻效应膜，其中 感测电流基本上垂直于磁阻效应膜流动，并且其中在下屏蔽中使用无定形材料或微晶材料。

公开(公告)号：US06903907B2

公开(公告)日：2005-06-07

申请号：US10254283

申请日：2002-09-25

申请人： Naoya Hasegawa

发明人： Naoya Hasegawa

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/16 ,  H01F10/32 ,  H01L43/08 ,  H01L43/12

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903

摘要： A specular layer and a nonmagnetic layer are provided on a central portion of a free magnetic layer, and ferromagnetic layers and second antiferromagnetic layers are provided on both end portions of the free magnetic layer. In the present invention, the total thickness of the specular layer and the nonmagnetic layer can be decreased, and thus ion milling for removing the layers from both end portions of the free magnetic layer can be performed with low energy. Therefore, both end portions of the free magnetic layer are less damaged by ion milling, and ferromagnetic coupling produced between both end portions of the free magnetic layer and the ferromagnetic layers can be increased, thereby permitting appropriate control of magnetization of the free magnetic layer.

摘要翻译： 在自由磁性层的中心部分设有镜面层和非磁性层，在自由磁性层的两端部设置铁磁层和第二反铁磁性层。 在本发明中，可以降低镜面层和非磁性层的总厚度，从而可以以低能量进行从自由磁性层的两端部去除层的离子研磨。 因此，通过离子研磨，自由磁性层的两个端部都受到较小的损伤，并且可以增加在自由磁性层的两个端部和铁磁性层之间产生的铁磁耦合，从而可以适当地控制自由磁性层的磁化。

公开(公告)号：US06899959B2

公开(公告)日：2005-05-31

申请号：US10075123

申请日：2002-02-12

申请人： Gerardo Bertero ,  Sudhir Malhotra ,  David Wachenschwanz ,  Zhengsheng Shan ,  Donald Stafford

发明人： Gerardo Bertero ,  Sudhir Malhotra ,  David Wachenschwanz ,  Zhengsheng Shan ,  Donald Stafford

IPC分类号： G11B5/64 ,  G11B5/66 ,  G11B5/667 ,  G11B5/738 ,  H01F10/16

CPC分类号： G11B5/66 ,  Y10T428/12465 ,  Y10T428/12646 ,  Y10T428/12861 ,  Y10T428/12868 ,  Y10T428/12931 ,  Y10T428/13 ,  Y10T428/24942 ,  Y10T428/31

摘要： A magnetic recording medium includes a substrate, an underlayer, a lower magnetic layer formed on the underlayer, an intermediate layer, and an upper magnetic layer formed on the intermediate layer. The intermediate layer is typically Ru, and promotes antiferromagnetic coupling between the upper and lower magnetic layers. The upper and lower magnetic layers are typically Co alloys. The lower magnetic layer has a high saturation magnetization Ms to promote high exchange coupling between the upper and lower magnetic layers. The dynamic coercivity of the lower magnetic layer is lower than the exchange field to ensure rapid switching of the lower magnetic layer.

摘要翻译： 磁记录介质包括基底，底层，形成在底层上的下磁性层，中间层和形成在中间层上的上磁性层。 中间层通常为Ru，并且促进上部和下部磁性层之间的反铁磁耦合。 上，下磁性层通常为Co合金。 下部磁性层具有高的饱和磁化强度Ms，以促进上部和下部磁性层之间的高交换耦合。 下磁层的动态矫顽力低于交换场，以确保下磁层的快速切换。

公开(公告)号：US20050105355A1

公开(公告)日：2005-05-19

申请号：US10495301

申请日：2002-10-08

申请人： Hubert Brueckl ,  Ulrich Klostermann ,  Joachim Wecker

发明人： Hubert Brueckl ,  Ulrich Klostermann ,  Joachim Wecker

IPC分类号： G11C11/15 ,  G11C11/16 ,  H01F10/16 ,  H01F10/32 ,  H01F41/30 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  G11C7/00

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  G11C11/15 ,  G11C11/16 ,  H01F10/3272 ,  H01F41/304

摘要： A method and apparatus are described for homogeneously magnetizing an exchange-coupled layer system of a digital magnetic memory cell device comprising an AAF layer system and an antiferromagnetic layer that exchange-couples a layer of the AAF layer system, characterized in that, given a defined direction of magnetization of the antiferromagnetic layer, the magnetic layers of the AAF layer system are saturated in a magnetic field and, afterward, the position of the direction of the antiferromagnetic layer magnetization and the direction of the saturating magnetic field relative to one another is changed, so that they are at an angle α of 0°

摘要翻译： 描述了用于均匀地磁化包括AAF层系统和反铁磁层的数字磁存储器单元装置的交换耦合层系统的方法和装置，所述AAF层系统和反铁磁层交换耦合一层AAF层系统，其特征在于， 反铁磁层的磁化方向，AAF层系统的磁性层在磁场中饱和，之后，反铁磁性层的磁化方向和饱和磁场的方向相对于彼此的位置发生变化 ，使得它们相对于彼此成为0°<α<180°的角度α，之后关闭饱和磁场。

公开(公告)号：US06893741B2

公开(公告)日：2005-05-17

申请号：US10602504

申请日：2003-06-24

申请人： Mary F. Doerner ,  Eric Edward Fullerton

发明人： Mary F. Doerner ,  Eric Edward Fullerton

IPC分类号： C22C38/00 ,  G01R33/09 ,  G11B5/00 ,  G11B5/39 ,  G11B5/66 ,  G11C11/15 ,  H01F10/16 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  B32B15/01 ,  B32B15/04 ,  B32B15/18

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/66 ,  G11B2005/001 ,  G11C11/15 ,  H01F10/324 ,  H01L43/10 ,  Y10T428/12875 ,  Y10T428/12931 ,  Y10T428/2495

摘要： The invention is a magnetic device, i.e., a magnetoresistive sensor or a magnetic tunnel junction device, that has a ferromagnetic structure of two ferromagnetic layers antiferromagnetically coupling together with an improved antiferromagnetically coupling (AFC) film. The AFC film is an alloy of Ru100-xFex where x is between approximately 10 and 60 atomic percent. This AFC film increases the exchange coupling by up to a factor or two and has an hcp crystalline structure making it compatible with Co alloy ferromagnetic layers.

摘要翻译： 本发明是具有与改进的反铁磁耦合（AFC）膜反铁磁耦合在一起的两个铁磁层的铁磁结构的磁性装置，即磁阻传感器或磁性隧道结装置。 AFC膜是其中x在约10和60原子百分比之间的Ru 100-x Fe x X x的合金。 这种AFC膜将交换耦合增加高达一个或两个，并且具有hcp晶体结构，使其与Co合金铁磁层相容。

公开(公告)号：US06893740B2

公开(公告)日：2005-05-17

申请号：US10422177

申请日：2003-04-23

申请人： Masamichi Saito

发明人： Masamichi Saito

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/16 ,  H01F10/32 ,  H01F41/22 ,  H01L43/08 ,  H01L43/12 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/3268 ,  H01F10/3272 ,  Y10T428/115 ,  Y10T428/1171 ,  Y10T428/12861 ,  Y10T428/1291 ,  Y10T428/12931 ,  Y10T428/12986

摘要： A magnetoresistive sensor and a method of manufacturing the magnetoresistive sensor are provided, which can effectively increase ΔRA, and which can more easily and reliably bring magnetization of a free magnetic layer and magnetization of a pinned magnetic layer into an orthogonal state than the related art. By forming the pinned magnetic layer of a multilayered structure comprising a first hard magnetic layer, a nonmagnetic layer, and a second hard magnetic layer, the magnetization of the free magnetic layer and the magnetization of the pinned magnetic layer can be more easily and reliably brought into an orthogonal state than in the related art. Also, the pinned magnetic layer can be formed in a larger film thickness than that in the related art. Accordingly, the product (ΔRA) of a resistance change amount (ΔR) and a sensor area (A) in a direction parallel to film surfaces can be increased.

摘要翻译： 提供一种磁阻传感器和制造磁阻传感器的方法，其可以有效地增加DeltaRA，并且其可以更容易且可靠地将自由磁性层的磁化和被钉扎的磁性层的磁化与现有技术相比处于正交状态。 通过形成包括第一硬磁性层，非磁性层和第二硬磁性层的多层结构的钉扎磁性层，可以更容易且可靠地使自由磁性层的磁化和被钉扎的磁性层的磁化 成为与现有技术相比的正交状态。 此外，钉扎磁性层可以形成为比现有技术更大的膜厚度。 因此，可以增加与膜表面平行的方向上的电阻变化量（DeltaR）和传感器区域（A）的乘积（DeltaRA）。