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    Apparatus for reshaping or bending tubular envelopes of fluorescent lamp assemblies into annular form
    118.
    发明授权
    Apparatus for reshaping or bending tubular envelopes of fluorescent lamp assemblies into annular form 失效
    用于将荧光灯组件的管状包络线整形或弯曲成环形的装置

    公开(公告)号：US3920434A

    公开(公告)日：1975-11-18

    申请号：US49127174

    申请日：1974-07-24

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： ISHISAKA TSUTOMU

    IPC: H01J9/24 ,  C03B23/06 ,  H01J9/00

    CPC classification number: H01J9/00 ,  C03B23/065 ,  Y02P40/57

    Abstract: In an apparatus for reshaping or molding tubular envelopes of fluorescent lamps or the like into an annular form, an improvement in or relating to a pulley-shaped mold assembly is disclosed which assembly comprises a pair of separable mold half sections which, when mated together, define an annular groove around the periphery of the mold assembly around which is wrapped an envelope sufficiently heated to a workable or reshapable condition so as to be shaped into the annular form. The molding head of the apparatus comprises two mold assemblies of the type described so that two envelopes may be simultaneously shaped into an annular form. Each mold assembly is divided into a pair of half sections by a vertical plane at right angles to the axis thereof in such a way that one of the half sections located closer to the other mold assembly has a thickness shorter than that of the other half section so that the distance between the paired heads holding tubular envelopes may be shortened with the resultant reduction in overall dimensions of the reshaping apparatus and annular fluorescent lamp manufacturing machine.

    Abstract translation: 在用于将荧光灯等的管状包层重新成型或成型为环形的装置中，公开了一种带轮状模具组件的改进或涉及滑轮形模具组件的组件，该组件包括一对可分离的半模部分， 在模具组件的周边周围限定环形槽，围绕该环形槽将包封充分加热至可工作或可重复状态，以便成形为环形。 该装置的成型头包括所述类型的两个模具组件，使得两个包络件可以同时成形为环形。 每个模具组件通过与其轴线成直角的垂直平面分成一对半部分，使得位于更靠近另一模具组件的半部分中的一个具有比另一半部分的厚度更短的厚度 使得保持管状信封的成对头部之间的距离可能缩短，从而导致整形装置和环形荧光灯制造机器的整体尺寸的减小。

    High-pressure metal-vapor discharge lamp
    119.
    发明授权
    High-pressure metal-vapor discharge lamp 失效
    高压金属蒸汽放电灯

    公开(公告)号：US3911308A

    公开(公告)日：1975-10-07

    申请号：US44053674

    申请日：1974-02-07

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： AKUTSU HIDEZO ,  YAMAZAKI HARUO ,  IWAMA KATSUAKI ,  SAITO NAOKI

    IPC: H01J61/18 ,  H01J61/30

    CPC classification number: H01J61/18

    Abstract: A high-pressure metal-vapor discharge lamp is formed by enclosing scandium-halide, preferably scandium-iodide (ScI3) in the amount of 1.80 X 10 7 to 9.27 X 10 6 gram mol/cc of confined gas, and at least 3.1 times said halide quantity in atomic ratio of free (metal) scandium, together with some mercury as a buffer gas, inside a translucent alumina tube. Such discharge lamp can maintain a luminous efficiency of over 70 lumen/Watt and a general color-rendering index of over 70 for a period in excess of 6,000 hours, and thus, it is very useful as a general lighting source.

    Abstract translation: 高压金属蒸汽放电灯是通过以1.80×10 -7至9.27×10 -6克/立方厘米的封闭气体的量包围卤化钪，优选碘化钪（ScI3）形成的 ，并且在透明氧化铝管内部，游离（金属）钪原子比以及一些汞作为缓冲气体的至少3.1倍的卤化物量。 这种放电灯可以保持超过70流明/瓦的发光效率和超过70小时的一般显色指数超过6000小时，因此，作为一般照明源是非常有用的。

    Formation of abrupt junctions in liquid phase epitaxy
    120.
    发明授权
    Formation of abrupt junctions in liquid phase epitaxy 失效
    在液相外延形成突变结

    公开(公告)号：US3909317A

    公开(公告)日：1975-09-30

    申请号：US38365373

    申请日：1973-07-30

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： ITOH KUNIO ,  INOUE MORIO

    IPC: C30B19/06 ,  C30B19/10 ,  H01L21/208 ,  H01L7/38

    CPC classification number: C30B19/063 ,  C30B19/064 ,  C30B19/10 ,  H01L21/02395 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02625 ,  H01L21/02628 ,  Y10S148/006 ,  Y10S148/025 ,  Y10S148/107 ,  Y10S438/916

    Abstract: In the manufacturing of a multiple layer semiconductor device, such as semiconductor laser device formed by liquid phase epitaxial growth, the following improvement is offered, that is, after forming a first epitaxial growth layer by making a semiconductor substrate contact a first semiconductor solution, and prior to forming a second epitaxial growth layer by letting said first layer contact with a second semiconductor solution, said first layer is made to contact a third semiconductor solution or liquid metal, whereby the slope of impurity concentration in the vicinity of a junction formed between the first and the second layer can be satisfactorily steepened thereby attaining a good performance.

    Abstract translation: 在诸如通过液相外延生长形成的半导体激光器件的多层半导体器件的制造中，提供以下改进，即，通过使半导体衬底接触第一半导体溶液形成第一外延生长层之后，以及 在通过使所述第一层与第二半导体溶液接触来形成第二外延生长层之前，使所述第一层与第三半导体溶液或液态金属接触，由此在形成在第二半导体溶液之间的结处附近的杂质浓度的斜率 第一层和第二层可以令人满意地陡峭，从而获得良好的性能。

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