Abstract:
A method for making a graphene/carbon nanotube composite structure includes providing a metal substrate including a first surface and a second surface opposite to the first surface, growing a graphene film on the first surface of the metal substrate by a CVD method, providing at least one carbon nanotube film structure on the graphene film, and combining the at least one carbon nanotube film structure with the graphene film, and combining the polymer layer with the at least one carbon nanotube film structure and the graphene film, and forming a plurality of stripped electrodes by etching the metal substrate from the second surface.
Abstract:
The present disclosure relates to a method for making a thermoacoustic element. In the method, a graphene film is arranged on a metal substrate. A nonmetal substrate is stacked with the graphene film located on the metal substrate to form a laminate structure. The graphene film is sandwiched between the nonmetal substrate and the metal substrate. The metal substrate is removed from the stacked structure. A number of through-holes are formed in the nonmetal substrate. The graphene film is exposed through the plurality of through-holes.
Abstract:
A crank press includes an encoder measuring an angle value of a servo motor, a strain detector module generating a converted load value associated with deformation of a machine body, a memory storing at least one relation between an angle value and each of an upper torsion limit and an upper load limit, and a controller calculating a torque command value based on a position command, reading the upper torsion limit corresponding to the measured angle value, determining whether the torque command value exceeds the upper torsion limit, outputting the torque command value when negative, and outputting the upper torsion limit when affirmative. The controller further stops the servo motor when the converted load value exceeds the upper load limit corresponding to the measured angle value.
Abstract:
A power device includes a power supply module, a first electrical isolation unit, a second electrical isolation unit, a feedback control unit, and a comparing unit. The power supply module includes a feedback compensating terminal and an output terminal, the feedback compensating terminal provides a related voltage of output power, and the output terminal provides an output voltage. When the related voltage of output power is smaller than the predetermined voltage, the comparing unit controls the first electrical isolation unit to change operation of the feedback control unit and the second electrical isolation unit, to allow the power supply module to adjust the output voltage.
Abstract:
A driver drowsiness prediction system includes a vital signal detection unit, a control unit and a network bridge module. The vital signal detection unit detects vital signals of a driver. The control unit receives the driver's vital signs, and stores at least a feature signal. The feature signal represents the vital signal pattern of losing consciousness. The control unit continuously compares the detected vital signal with the feature signal. When the vital signal is similar to the feature signal, the control unit issues a pre-alarming command. The network bridge module receives the pre-alarming command and is triggered to perform a network connection process. The network bridge module logs into a pre-determined social website according to a login script, and then sends a pre-alarming message thereon, wherein the pre-alarming message includes an event indicating the driver is near unconsciousness.
Abstract:
An integrated circuit device includes a semiconductor substrate having a top surface; at least one insulation region extending from the top surface into the semiconductor substrate; a plurality of base contacts of a first conductivity type electrically interconnected to each other; and a plurality of emitters and a plurality of collectors of a second conductivity type opposite the first conductivity type. Each of the plurality of emitters, the plurality of collectors, and the plurality of base contacts is laterally spaced apart from each other by the at least one insulation region. The integrated circuit device further includes a buried layer of the second conductivity type in the semiconductor substrate, wherein the buried layer has an upper surface adjoining bottom surfaces of the plurality of collectors.
Abstract:
An ammonia-free method of depositing silicon nitride by way of plasma-enhanced chemical vapor deposition (PECVD). Source gases of silane (SiH4) and nitrogen (N2) are provided to a parallel-plate plasma reactor, in which energy is capacitively coupled to the plasma, and in which the wafer being processed has been placed at a support electrode. Low-frequency RF energy (e.g., 360 kHz) is applied to the support electrode; high-frequency RF energy (e.g., 13.56 MHz) is optionally provided to the parallel electrode. Process temperature is above 350° C., at a pressure of about 2.5 torr. Any hydrogen present in the resulting silicon nitride film is bound by N—H bonds rather than Si—H bonds, and is thus more strongly bound to the film. The silicon nitride can serve as passivation for ferroelectric material that may degrade electrically if contaminated by hydrogen.
Abstract:
A method for making a graphene/carbon nanotube composite structure includes providing a metal substrate including a first surface and a second surface opposite to the first surface, growing a graphene film on the first surface of the metal substrate by a CVD method, providing at least one carbon nanotube film structure on the graphene film, and combining the at least one carbon nanotube film structure with the graphene film, and combining the polymer layer with the at least one carbon nanotube film structure and the graphene film, and forming a plurality of stripped electrodes by etching the metal substrate from the second surface.
Abstract:
The present disclosure relates to a method for making a graphene/carbon nanotube composite structure. In the method, at least one graphene film is located on a substrate. At least one carbon nanotube layer is combined with the at least one graphene film located on the substrate to form a substrate/graphene/carbon nanotube composite structure. The at least one graphene film is in contact with the at least one carbon nanotube layer in the substrate/graphene/carbon nanotube composite structure. The substrate is removed from the substrate/graphene/carbon nanotube composite structure, thereby forming a graphene/carbon nanotube composite structure.
Abstract:
A thermoacoustic device includes a sound wave generator and a signal input device. The sound wave generator includes a composite structure. The composite structure includes a carbon nanotube film structure and a graphene film. The carbon nanotube film structure includes a number of carbon nanotubes and micropores. The graphene film is located on a surface of the carbon nanotube film structure, and covers the micropores.