Method for making thermoacoustic element
    112.
    发明授权
    Method for making thermoacoustic element 有权
    制作热声元件的方法

    公开(公告)号:US08758635B2

    公开(公告)日:2014-06-24

    申请号:US13303332

    申请日:2011-11-23

    Abstract: The present disclosure relates to a method for making a thermoacoustic element. In the method, a graphene film is arranged on a metal substrate. A nonmetal substrate is stacked with the graphene film located on the metal substrate to form a laminate structure. The graphene film is sandwiched between the nonmetal substrate and the metal substrate. The metal substrate is removed from the stacked structure. A number of through-holes are formed in the nonmetal substrate. The graphene film is exposed through the plurality of through-holes.

    Abstract translation: 本发明涉及制作热声元件的方法。 在该方法中,在金属基板上设置石墨烯膜。 堆叠非金属基底,石墨烯膜位于金属基底上以形成层压结构。 石墨烯膜夹在非金属基底和金属基底之间。 金属基板从堆叠结构中移除。 在非金属基材中形成多个通孔。 石墨烯膜通过多个通孔露出。

    Power device
    114.
    发明授权
    Power device 有权
    电源设备

    公开(公告)号:US08576585B2

    公开(公告)日:2013-11-05

    申请号:US13019405

    申请日:2011-02-02

    CPC classification number: H02M3/33523

    Abstract: A power device includes a power supply module, a first electrical isolation unit, a second electrical isolation unit, a feedback control unit, and a comparing unit. The power supply module includes a feedback compensating terminal and an output terminal, the feedback compensating terminal provides a related voltage of output power, and the output terminal provides an output voltage. When the related voltage of output power is smaller than the predetermined voltage, the comparing unit controls the first electrical isolation unit to change operation of the feedback control unit and the second electrical isolation unit, to allow the power supply module to adjust the output voltage.

    Abstract translation: 功率器件包括电源模块,第一电隔离单元,第二电隔离单元,反馈控制单元和比较单元。 电源模块包括反馈补偿端子和输出端子,反馈补偿端子提供输出功率的相关电压,输出端子提供输出电压。 当输出功率的相关电压小于预定电压时,比较单元控制第一电隔离单元以改变反馈控制单元和第二电隔离单元的操作,以允许电源模块调节输出电压。

    DRIVER DROWSINESS PREDICTION SYSTEM AND METHOD THEREOF
    115.
    发明申请
    DRIVER DROWSINESS PREDICTION SYSTEM AND METHOD THEREOF 有权
    DRIVER DROWSINESS PREDICTION系统及其方法

    公开(公告)号:US20130207804A1

    公开(公告)日:2013-08-15

    申请号:US13611487

    申请日:2012-09-12

    CPC classification number: G08B21/06 A61B5/04 A61B5/18 G08G1/096716 Y02T10/84

    Abstract: A driver drowsiness prediction system includes a vital signal detection unit, a control unit and a network bridge module. The vital signal detection unit detects vital signals of a driver. The control unit receives the driver's vital signs, and stores at least a feature signal. The feature signal represents the vital signal pattern of losing consciousness. The control unit continuously compares the detected vital signal with the feature signal. When the vital signal is similar to the feature signal, the control unit issues a pre-alarming command. The network bridge module receives the pre-alarming command and is triggered to perform a network connection process. The network bridge module logs into a pre-determined social website according to a login script, and then sends a pre-alarming message thereon, wherein the pre-alarming message includes an event indicating the driver is near unconsciousness.

    Abstract translation: 驾驶员睡意预测系统包括生命信号检测单元,控制单元和网桥模块。 重要信号检测单元检测驾驶员的重要信号。 控制单元接收驾驶员的生命体征,并存储至少一个特征信号。 特征信号代表失去意识的重要信号模式。 控制单元将检测到的生命信号与特征信号连续地进行比较。 当重要信号与特征信号相似时,控制单元发出预警命令。 网桥模块接收预警命令,并触发执行网络连接过程。 网桥模块根据登录脚本登录到预定的社交网站,然后在其上发送预警信息,其中所述预警消息包括指示所述驾驶员接近无意识的事件。

    High-voltage BJT formed using CMOS HV processes
    116.
    发明授权
    High-voltage BJT formed using CMOS HV processes 有权
    使用CMOS HV工艺形成高压BJT

    公开(公告)号:US08415764B2

    公开(公告)日:2013-04-09

    申请号:US12750503

    申请日:2010-03-30

    Abstract: An integrated circuit device includes a semiconductor substrate having a top surface; at least one insulation region extending from the top surface into the semiconductor substrate; a plurality of base contacts of a first conductivity type electrically interconnected to each other; and a plurality of emitters and a plurality of collectors of a second conductivity type opposite the first conductivity type. Each of the plurality of emitters, the plurality of collectors, and the plurality of base contacts is laterally spaced apart from each other by the at least one insulation region. The integrated circuit device further includes a buried layer of the second conductivity type in the semiconductor substrate, wherein the buried layer has an upper surface adjoining bottom surfaces of the plurality of collectors.

    Abstract translation: 集成电路器件包括具有顶表面的半导体衬底; 至少一个绝缘区域,从所述顶表面延伸到所述半导体衬底中; 多个彼此电互连的第一导电类型的基座触头; 以及与第一导电类型相反的第二导电类型的多个发射极和多个集电极。 多个发射器,多个集光器和多个基座触点中的每一个通过至少一个绝缘区域彼此横向间隔开。 集成电路装置还包括在半导体衬底中的第二导电类型的掩埋层,其中掩埋层具有邻接多个集电极的底表面的上表面。

    Hydrogen-Blocking Film for Ferroelectric Capacitors
    117.
    发明申请
    Hydrogen-Blocking Film for Ferroelectric Capacitors 审中-公开
    用于铁电电容器的氢封闭膜

    公开(公告)号:US20130056811A1

    公开(公告)日:2013-03-07

    申请号:US13432736

    申请日:2012-03-28

    CPC classification number: H01L21/02225 H01L27/11507 H01L28/55 H01L28/57

    Abstract: An ammonia-free method of depositing silicon nitride by way of plasma-enhanced chemical vapor deposition (PECVD). Source gases of silane (SiH4) and nitrogen (N2) are provided to a parallel-plate plasma reactor, in which energy is capacitively coupled to the plasma, and in which the wafer being processed has been placed at a support electrode. Low-frequency RF energy (e.g., 360 kHz) is applied to the support electrode; high-frequency RF energy (e.g., 13.56 MHz) is optionally provided to the parallel electrode. Process temperature is above 350° C., at a pressure of about 2.5 torr. Any hydrogen present in the resulting silicon nitride film is bound by N—H bonds rather than Si—H bonds, and is thus more strongly bound to the film. The silicon nitride can serve as passivation for ferroelectric material that may degrade electrically if contaminated by hydrogen.

    Abstract translation: 通过等离子体增强化学气相沉积(PECVD)沉积氮化硅的无氨方法。 将硅烷(SiH4)和氮(N2)的源气体提供给平行板等离子体反应器,其中能量电容耦合到等离子体,并且其中待处理的晶片已经被放置在支撑电极处。 将低频RF能量(例如,360kHz)施加到支撑电极; 可选地,将高频RF能量(例如,13.56MHz)提供给并联电极。 工艺温度高于350℃,压力约为2.5托。 存在于所得氮化硅膜中的任何氢由N-H键而不是Si-H键结合,因此与膜更牢固地结合。 氮化硅可用作铁电材料的钝化剂,如果被氢气污染,则可能会电解。

    METHOD FOR MAKING GRAPHENE/CARBON NANOTUBE COMPOSITE STRUCTURE
    118.
    发明申请
    METHOD FOR MAKING GRAPHENE/CARBON NANOTUBE COMPOSITE STRUCTURE 有权
    制备石墨/碳纳米管复合结构的方法

    公开(公告)号:US20120298618A1

    公开(公告)日:2012-11-29

    申请号:US13303343

    申请日:2011-11-23

    Abstract: A method for making a graphene/carbon nanotube composite structure includes providing a metal substrate including a first surface and a second surface opposite to the first surface, growing a graphene film on the first surface of the metal substrate by a CVD method, providing at least one carbon nanotube film structure on the graphene film, and combining the at least one carbon nanotube film structure with the graphene film, and combining the polymer layer with the at least one carbon nanotube film structure and the graphene film, and forming a plurality of stripped electrodes by etching the metal substrate from the second surface.

    Abstract translation: 制造石墨烯/碳纳米管复合结构的方法包括提供包括第一表面和与第一表面相对的第二表面的金属基板,通过CVD方法在金属基板的第一表面上生长石墨烯膜,至少提供 一个碳纳米管膜结构,并且将至少一个碳纳米管膜结构与石墨烯膜结合,并将聚合物层与至少一个碳纳米管膜结构和石墨烯膜组合,并形成多个剥离的 电极,通过从第二表面蚀刻金属基底。

    METHOD FOR MAKING GRAPHENE/CARBON NANOTUBE COMPOSITE STRUCTURE
    119.
    发明申请
    METHOD FOR MAKING GRAPHENE/CARBON NANOTUBE COMPOSITE STRUCTURE 有权
    制备石墨/碳纳米管复合结构的方法

    公开(公告)号:US20120298289A1

    公开(公告)日:2012-11-29

    申请号:US13303310

    申请日:2011-11-23

    Abstract: The present disclosure relates to a method for making a graphene/carbon nanotube composite structure. In the method, at least one graphene film is located on a substrate. At least one carbon nanotube layer is combined with the at least one graphene film located on the substrate to form a substrate/graphene/carbon nanotube composite structure. The at least one graphene film is in contact with the at least one carbon nanotube layer in the substrate/graphene/carbon nanotube composite structure. The substrate is removed from the substrate/graphene/carbon nanotube composite structure, thereby forming a graphene/carbon nanotube composite structure.

    Abstract translation: 本公开涉及一种制造石墨烯/碳纳米管复合结构的方法。 在该方法中,至少一个石墨烯膜位于基底上。 至少一个碳纳米管层与位于衬底上的至少一个石墨烯膜组合以形成衬底/石墨烯/碳纳米管复合结构。 所述至少一个石墨烯膜与所述基板/石墨烯/碳纳米管复合结构中的所述至少一个碳纳米管层接触。 从衬底/石墨烯/碳纳米管复合结构去除衬底,从而形成石墨烯/碳纳米管复合结构。

    THERMOACOUSTIC DEVICE
    120.
    发明申请
    THERMOACOUSTIC DEVICE 有权
    热电器件

    公开(公告)号:US20120250908A1

    公开(公告)日:2012-10-04

    申请号:US13338282

    申请日:2011-12-28

    CPC classification number: H04R23/002

    Abstract: A thermoacoustic device includes a sound wave generator and a signal input device. The sound wave generator includes a composite structure. The composite structure includes a carbon nanotube film structure and a graphene film. The carbon nanotube film structure includes a number of carbon nanotubes and micropores. The graphene film is located on a surface of the carbon nanotube film structure, and covers the micropores.

    Abstract translation: 热声装置包括声波发生器和信号输入装置。 声波发生器包括复合结构。 复合结构包括碳纳米管膜结构和石墨烯膜。 碳纳米管膜结构包括多个碳纳米管和微孔。 石墨烯膜位于碳纳米管膜结构的表面上并覆盖微孔。

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