公开(公告)号：US4510671A

公开(公告)日：1985-04-16

申请号：US537100

申请日：1983-11-21

Applicant: Anthony D. Kurtz ,  Timothy A. Nunn ,  Joseph R. Mallon

Inventor： Anthony D. Kurtz ,  Timothy A. Nunn ,  Joseph R. Mallon

IPC: G01L1/22 ,  G01L9/00 ,  H01L21/265 ,  H01L21/762 ,  H01L29/84

CPC classification number: H01L21/76243 ,  G01L1/2293 ,  G01L9/0055 ,  H01L21/26506 ,  H01L29/84 ,  Y10S148/159 ,  Y10S438/97 ,  Y10S438/977 ,  Y10T29/49103

Abstract: A transducer structure is disclosed which comprises a single crystal semiconductor diaphragm dielectrically isolated by a layer of silicon dioxide from a single crystal gage configuration. The methods depicted employ high dose oxygen which is ion implanted into a monocrystalline wafer to form a buried layer of silicon dioxide with the top surface of the wafer being monocrystalline silicon. An additional layer of silicon is epitaxially grown on the top surface of the wafer to enable the etching or formation of a desired gage pattern.

Abstract translation: 公开了一种换能器结构，其包括通过单晶计配置的二氧化硅层介电隔离的单晶半导体隔膜。 所描述的方法使用高剂量氧，其被离子注入到单晶晶片中以形成二氧化硅的掩埋层，其中晶片的顶表面是单晶硅。 在晶片的顶表面上外延生长另外的硅层，以便蚀刻或形成期望的量具图案。

公开(公告)号：US4442717A

公开(公告)日：1984-04-17

申请号：US419903

申请日：1982-09-20

Applicant: Anthony D. Kurtz ,  Joseph R. Mallon

Inventor： Anthony D. Kurtz ,  Joseph R. Mallon

IPC: G01B7/16 ,  G01L9/00 ,  G01B7/18 ,  G01D3/04

CPC classification number: G01B7/18 ,  G01L9/0055

Abstract: Compensating apparatus for a shear gage transducer employing a piezoresistor. The shear gage transducer or sensor is of a cross-shaped planar configuration where a lack of symmetry in structure or in fabrication undesirably provides offsets at the output terminals associated with the horizontal cross arm. The compensating apparatus includes a series chain of resistors positioned between selected terminals of said sensor to provide a desired null output voltage over a temperature operating range. Further embodiments depict a shear sensor having a unique contact configuration to enable resistive compensation of undesired offsets.

Abstract translation: 采用压敏电阻的剪切量规传感器的补偿装置。 剪切量规传感器或传感器是十字形平面构造，其中结构或制造中的对称性不足不期望地在与水平横臂相关联的输出端处提供偏移。 补偿装置包括位于所述传感器的选定端子之间的串联的电阻链，以在温度操作范围内提供期望的零输出电压。 另外的实施例描绘了具有独特接触构造的剪切传感器，以实现不希望的偏移的电阻补偿。

公开(公告)号：US4419620A

公开(公告)日：1983-12-06

申请号：US356084

申请日：1982-03-08

Applicant: Anthony D. Kurtz ,  Donald Weinstein

Inventor： Anthony D. Kurtz ,  Donald Weinstein

IPC: G01D3/02 ,  G01L1/22 ,  G01L9/06 ,  G01R15/00 ,  G01R17/10

CPC classification number: G01D3/021 ,  G01L1/2275 ,  G01L9/06 ,  G01R15/005

Abstract: A circuit for linearizing the output of a differential pressure transducer includes first and second operational amplifiers. Each amplifier is associated with threshold devices as diodes so that one amplifier will be active for one condition of output polarity while the other amplifier will be active for the other condition of output polarity. The output of the amplifiers are connected to a common terminal which provides a compensating biasing voltage to the transducer. The voltage varies in a "V" shaped characteristic to enable one to achieve a linear output voltage from the transducer for both positive and negative pressure differences.

Abstract translation: 用于线性化压差换能器的输出的电路包括第一和第二运算放大器。 每个放大器与阈值器件作为二极管相关联，以便一个放大器在输出极性的一个条件下将被激活，而另一个放大器将在输出极性的其他条件下有效。 放大器的输出端连接到向换能器提供补偿偏置电压的公共端子。 电压以“V”形特性变化，使得能够实现来自换能器的正压差和负压差的线性输出电压。

公开(公告)号：US4359498A

公开(公告)日：1982-11-16

申请号：US255468

申请日：1981-04-20

Applicant: Joseph R. Mallon ,  Anthony D. Kurtz

Inventor： Joseph R. Mallon ,  Anthony D. Kurtz

IPC: G01L9/00 ,  B32B3/00 ,  G01L1/22 ,  G01L9/06

CPC classification number: G01L9/0054 ,  G01L9/0042 ,  Y10T428/24479

Abstract: There is disclosed a rectangular diaphragm employing a quasi rectangular active area. The diaphragm as configured has an aspect ratio which is the length to width ratio of greater than 3:1. The active area of the diaphragm, which is the area which most readily deflects upon application of a force to the diaphragm, is formed by an anisotropic etching technique to provide steep vertical sidewalls. The diaphragm structure thus described exhibits as a response to an applied force or pressure, a maximum longitudinal stress and a minimum transverse stress and can accommodate piezoresistive elements located within the active area of the diaphragm.

Abstract translation: 公开了采用准矩形有源区的矩形隔膜。 构造的隔膜具有长宽比大于3:1的纵横比。 通过各向异性蚀刻技术形成膜片的有效面积，其是在向膜片施加力时最容易偏转的区域，以提供陡峭的垂直侧壁。 如此描述的隔膜结构表现为对施加的力或压力，最大纵向应力和最小横向应力的响应，并且可以适应位于隔膜的有效区域内的压阻元件。

公开(公告)号：US4216404A

公开(公告)日：1980-08-05

申请号：US29296

申请日：1979-04-12

Applicant: Anthony D. Kurtz ,  Joseph R. Mallon

Inventor： Anthony D. Kurtz ,  Joseph R. Mallon

IPC: G01L1/18 ,  H01L29/84 ,  H01L41/10

CPC classification number: H01L29/84 ,  G01L1/18

Abstract: There is disclosed an electromechanical transducer of the type employing a semiconductor diaphragm. The diaphragm is associated with an active area upon which is mounted at least one force responsive element. Surrounding the active area of the diaphragm is an annular ridge which is located on a surface opposite that containing the element. A cylindrical housing having a central aperture is secured to the diaphragm on the same surface as the element and with its aperture coaxially aligned with the active diaphragm area. The aperture in the housing being larger than the aperture of the annular ridge and underlies the same to provide an exposed area about the periphery of the element's active area. This area is used for the deposition or location of terminals which are coupled to the element. The area is insensitive to applied force due to relative size of the ridge and housing and thus conducting leads attached to the terminals do not interfere with the specifications associated with the transducer.

Abstract translation: 公开了采用半导体膜片的机电换能器。 隔膜与其上安装有至少一个力响应元件的有效区域相关联。 围绕隔膜的有效区域的是环形脊，其位于与容纳元件相对的表面上。 具有中心孔的圆柱形壳体在与该元件相同的表面上固定到隔膜上，并且其孔与主动隔膜区域同轴对准。 壳体中的孔径大于环形脊的孔径并且在其下方，以提供围绕元件的有效区域的周边的暴露区域。 该区域用于耦合到元件的端子的沉积或位置。 该区域由于脊和壳体的相对尺寸而对施加的力不敏感，因此连接到端子的导电引线不会干扰与换能器相关的规格。

公开(公告)号：US3935634A

公开(公告)日：1976-02-03

申请号：US504859

申请日：1974-09-11

Applicant: Anthony D. Kurtz ,  Joseph R. Mallon

Inventor： Anthony D. Kurtz ,  Joseph R. Mallon

IPC: G01L9/00 ,  B01J17/00

CPC classification number: G01L9/0054 ,  Y10T29/42 ,  Y10T29/49103

Abstract: A transducer assembly comprises a thin diaphragm of silicon having at least one piezoresistive element located in a central active area of the diaphragm. The diaphragm has a metal ring containing terminal accommodating apertures about the periphery thereof. The metal ring bounds the outermmost portion of the diaphragm designated as a non-active area. An annular housing fabricated from a high dielectric material has a series of wire accommodating grooves in a side wall thereof each one aligned with a predetermined one of said terminal accommodating apertures. The metal ring is secured to the annular housing with the active area of the diaphragm surrounded by a central aperture of the annular housing. The metal ring is secured to the housing by an electrostatic glass bond.

Abstract translation: 传感器组件包括具有位于隔膜的中心有源区域中的至少一个压阻元件的薄的硅膜片。 隔膜具有围绕其周边的容纳孔的金属环。 金属环限定了指定为非活动区域的隔膜的最外部。 由高介电材料制成的环形壳体具有在其侧壁中的一系列线容纳槽，每个线与预定的一个所述端子容纳孔对准。 金属环固定到环形壳体上，隔膜的有效区域由环形壳体的中心孔包围。 金属环通过静电玻璃粘合固定在外壳上。

公开(公告)号：US08978235B2

公开(公告)日：2015-03-17

申请号：US13467207

申请日：2012-05-09

Applicant: Anthony D. Kurtz

Inventor： Anthony D. Kurtz

IPC: B23P17/00 ,  G01L19/00 ,  G01L19/06

CPC classification number: G01L19/0084 ,  G01L7/082 ,  G01L19/0645 ,  Y10T29/49007 ,  Y10T29/4998

Abstract: An oil-filled pressure transducer having reduced back pressure, comprising an alignment plate having a sensor accommodating aperture, a sensor module inserted into the sensor accommodating aperture, a header surrounding the alignment plate, the header having a protruding top surface, and a diaphragm disposed on the protruding top surface to create a relatively small oil accommodating region between the diaphragm and the sensor. This configuration reduces the oil volume required for operation, which ultimately reduces the back pressure applied against the diaphragm.

公开(公告)号：US08631707B2

公开(公告)日：2014-01-21

申请号：US12751482

申请日：2010-03-31

Applicant: Anthony D. Kurtz ,  Alexander Ned ,  Sorin Stefanescu ,  Nora Kurtz

Inventor： Anthony D. Kurtz ,  Alexander Ned ,  Sorin Stefanescu ,  Nora Kurtz

IPC: G01L9/10 ,  G01L15/00 ,  G01L7/08

CPC classification number: G01L9/0055 ,  G01L13/025 ,  G01L15/00 ,  G01L19/04 ,  Y10T29/49002

Abstract: A dual diaphragm pressure transducer, or sensor, with compensation for non-pressure effects is disclosed. The pressure sensor can include two pressure transducers located on separate portions of a chip. The first pressure transducer can be a differential pressure transducer, which produces a signal proportional to one or more applied pressures and includes other non-pressure effects. The second pressure transducer can be sealed in a hermetic chamber and thus can produce a signal proportional only to non-pressure effects. The signals can be combined to produce a signal proportional to the applied pressures with no non-pressure effects. The first and second pressure transducers can be physically and/or electrically isolated to improve sealing between the two pressure transducers and prevent pressure leaks therebetween.

Abstract translation: 公开了一种具有非压力效应补偿的双隔膜压力传感器或传感器。 压力传感器可以包括位于芯片的分开部分上的两个压力传感器。 第一压力传感器可以是差压传感器，其产生与一个或多个施加压力成比例的信号，并且包括其它非压力效应。 第二压力传感器可以密封在密封室中，因此可以产生仅与非压力效应成比例的信号。 信号可以组合以产生与所施加的压力成比例的信号，而没有非压力效应。 第一和第二压力传感器可以物理和/或电隔离以改善两个压力传感器之间的密封并防止它们之间的压力泄漏。

公开(公告)号：US08497757B2

公开(公告)日：2013-07-30

申请号：US12686990

申请日：2010-01-13

Applicant: Anthony D. Kurtz ,  Alexander Ned

Inventor： Anthony D. Kurtz ,  Alexander Ned

IPC: G01L1/22

CPC classification number: G01L1/18 ,  C03C27/044 ,  G01L1/2287 ,  G01L9/0042 ,  G01L9/0054 ,  G01L19/0069 ,  G01L19/0084 ,  Y10T156/10

Abstract: A piezoresistive sensor device and a method for making a piezoresistive device are disclosed. The sensor device comprises a silicon wafer having piezoresistive elements and contacts in electrical communication with the elements. The sensor device further comprises a contact glass coupled to the silicon wafer and having apertures aligned with the contacts. The sensor device also comprises a non-conductive frit for mounting the contact glass to a header glass, and a conductive non-lead glass frit disposed in the apertures and in electrical communication with the contacts. The method for making a piezoresistive sensor device, comprises bonding a contact glass to a silicon wafer such that apertures in the glass line up with contacts on the wafer, and filling the apertures with a non-lead glass frit such that the frit is in electrical communication with the contacts. The use of a lead free glass frit prevents catastrophic failure of the piezoresistive sensor and associated transducer in ultra high temperature applications.

Abstract translation: 公开了压阻传感器装置和制造压阻器件的方法。 传感器装置包括具有压阻元件和与元件电连通的触点的硅晶片。 所述传感器装置还包括接触玻璃，所述接触玻璃联接到所述硅晶片并且具有与所述触点对准的孔。 传感器装置还包括用于将接触玻璃安装到集管玻璃的非导电玻璃料，以及设置在孔中并与触头电连通的导电非铅玻璃料。 用于制造压阻传感器装置的方法包括将接触玻璃接合到硅晶片，使得玻璃中的孔与晶片上的触点对齐，并用非铅玻璃料填充孔，使得玻璃料处于电 与联系人沟通。 使用无铅玻璃料防止压敏传感器和相关传感器在超高温应用中的灾难性故障。

公开(公告)号：US08482372B2

公开(公告)日：2013-07-09

申请号：US13453685

申请日：2012-04-23

Applicant: Anthony D. Kurtz ,  Alexander A. Ned

Inventor： Anthony D. Kurtz ,  Alexander A. Ned

IPC: G01L1/22

CPC classification number: G01L1/18 ,  C03C27/044 ,  G01L1/2287 ,  G01L9/0042 ,  G01L9/0054 ,  G01L19/0069 ,  G01L19/0084 ,  Y10T156/10

Abstract: A piezoresistive sensor device and method for making the same are disclosed. The device comprises a silicon wafer having piezoresistive elements and contacts in electrical communication with the elements. The device further comprises a contact glass coupled to the silicon wafer and having apertures aligned with the contacts. The device also comprises a non-conductive frit for mounting the contact glass to a header glass, and a conductive non-lead glass frit disposed in the apertures and in electrical communication with the contacts. The method for making the device comprises bonding a contact glass to a silicon wafer such that apertures in the glass line up with contacts on the wafer, and filling the apertures with a non-lead glass frit such that the frit is in electrical communication with the contacts. The use of a lead free glass frit prevents catastrophic failure of the device in ultra high temperature applications.

Abstract translation: 公开了一种压阻传感器装置及其制造方法。 该器件包括具有压阻元件和与元件电连通的触点的硅晶片。 该装置还包括联接到硅晶片并具有与触点对准的孔的接触玻璃。 该装置还包括用于将接触玻璃安装到集管玻璃的非导电玻璃料，以及设置在孔中并与触头电连通的导电非铅玻璃料。 制造该器件的方法包括将接触玻璃接合到硅晶片，使得玻璃中的孔与晶片上的触点对齐，并用非铅玻璃料填充孔，使得玻璃料与 联系人 使用无铅玻璃料可防止器件在超高温应用中的灾难性故障。