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    METHOD FOR MAKING EPITAXIAL STRUCTURE
    111.
    发明申请
    METHOD FOR MAKING EPITAXIAL STRUCTURE 有权
    制造外形结构的方法

    公开(公告)号：US20130288457A1

    公开(公告)日：2013-10-31

    申请号：US13676026

    申请日：2012-11-13

    申请人： YANG WEI ,  SHOU-SHAN FAN

    发明人： YANG WEI ,  SHOU-SHAN FAN

    IPC分类号： H01L21/36

    CPC分类号： H01L21/36 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/188 ,  C30B23/02 ,  C30B25/02 ,  C30B29/02 ,  H01L21/0237 ,  H01L21/02444 ,  H01L21/02499 ,  H01L21/0254 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/005

    摘要： A method for making epitaxial structure is provided. The method includes providing a substrate having an epitaxial growth surface, placing a graphene layer on the epitaxial growth surface, and epitaxially growing an epitaxial layer on the epitaxial growth surface. The graphene layer includes a number of apertures to expose a part of the epitaxial growth surface. The epitaxial layer is grown from the exposed part of the epitaxial growth surface and through the aperture.

    摘要翻译： 提供了制造外延结构的方法。 该方法包括提供具有外延生长表面的衬底，将石墨烯层放置在外延生长表面上，以及在外延生长表面上外延生长外延层。 石墨烯层包括许多孔以暴露外延生长表面的一部分。 外延层从外延生长表面的暴露部分并通过孔生长。

    METHOD FOR MAKING INCANDESCENT LIGHT SOURCE AND INCANDESCENT LIGHT SOURCE DISPLAY
    112.
    发明申请
    METHOD FOR MAKING INCANDESCENT LIGHT SOURCE AND INCANDESCENT LIGHT SOURCE DISPLAY 有权
    制造不良光源和不良光源显示的方法

    公开(公告)号：US20130260633A1

    公开(公告)日：2013-10-03

    申请号：US13632433

    申请日：2012-10-01

    申请人： YANG WEI ,  SHOU-SHAN FAN

    发明人： YANG WEI ,  SHOU-SHAN FAN

    IPC分类号： H01K3/02 ,  H01K3/26

    CPC分类号： H01J9/025 ,  H01J31/127 ,  H01J2329/0455

    摘要： A method for making an incandescent light source display is disclosed. Electrode pairs connected to the driving circuit are formed on a substrate. The electrode pairs are spaced from each other and located on pixel locations. Each electrode pair includes a first electrode and a second electrode. The electrode pairs are covered with a drawn carbon nanotube film. The drawn carbon nanotube film suspends between the first electrode and the second electrode and has the plurality of carbon nanotubes substantially aligned an X direction from the first electrode to the second electrode in each electrode pair. The drawn carbon nanotube film is then cut along the X direction to form at least one carbon nanotube strip in each pixel location. The drawn carbon nanotube film between any adjacent two pixel locations are broken off. The carbon nanotube strip is shrunk into a carbon nanotube wire.

    摘要翻译： 公开了一种制造白炽光源显示器的方法。 连接到驱动电路的电极对形成在基板上。 电极对彼此间隔开并且位于像素位置上。 每个电极对包括第一电极和第二电极。 电极对用拉伸的碳纳米管膜覆盖。 拉伸的碳纳米管膜悬挂在第一电极和第二电极之间，并且在每个电极对中具有从第一电极到第二电极的X方向上的多个碳纳米管。 然后沿X方向切割拉伸的碳纳米管膜，以在每个像素位置形成至少一个碳纳米管条。 任何相邻两个像素位置之间的碳纳米管薄膜被折断。 碳纳米管条收缩成碳纳米管线。

    EPITAXIAL BASE
    113.
    发明申请
    EPITAXIAL BASE 有权
    外来基地

    公开(公告)号：US20130260093A1

    公开(公告)日：2013-10-03

    申请号：US13647444

    申请日：2012-10-09

    申请人： YANG WEI ,  SHOU-SHAN FAN

    发明人： YANG WEI ,  SHOU-SHAN FAN

    IPC分类号： B32B3/30 ,  B32B3/24 ,  B82Y30/00

    CPC分类号： H01L21/0237 ,  H01L21/0243 ,  H01L21/02444 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/0254 ,  H01L21/0262 ,  Y10T428/24331 ,  Y10T428/24521

    摘要： An epitaxial base is provided. The epitaxial base includes a substrate and a carbon nanotube layer. The substrate has an epitaxial growth surface and defines a plurality of grooves and bulges on the epitaxial growth surface. The carbon nanotube layer covers the epitaxial growth surface, wherein a first part of the carbon nanotube layer attached on top surface of the bulges, and a second part of the carbon nanotube layer attached on bottom surface and side surface of the grooves.

    摘要翻译： 提供外延基底。 外延基底包括基底和碳纳米管层。 衬底具有外延生长表面并且在外延生长表面上限定多个凹槽和凸起。 所述碳纳米管层覆盖所述外延生长面，其中，所述碳纳米管层的第一部分附着在所述凸起的顶面上，所述碳纳米管层的第二部分安装在所述凹槽的底面和侧面。

    CARBON NANOTUBE FIELD EMITTER
    114.
    发明申请
    CARBON NANOTUBE FIELD EMITTER 有权
    碳纳米管场发射体

    公开(公告)号：US20130257262A1

    公开(公告)日：2013-10-03

    申请号：US13657663

    申请日：2012-10-22

    申请人： PENG LIU ,  SHOU-SHAN FAN

    发明人： PENG LIU ,  SHOU-SHAN FAN

    IPC分类号： H01J19/24 ,  B82Y99/00

    CPC分类号： H01J1/304 ,  H01J9/025 ,  H01J2201/30469

    摘要： The present application relates to a carbon nanotube field emitter. The carbon nanotube field emitter includes a carbon nanotube structure. The carbon nanotube structure includes a plurality of carbon nanotubes joined end-to-end by van der waals attractive force. The carbon nanotube structure has two joined portions, one portion is a triangle shaped carbon nanotube film, which is an electron emitting portion, the other portion is a carbon nanotube wire, which is a support portion.

    摘要翻译： 本申请涉及碳纳米管场发射体。 碳纳米管场发射体包括碳纳米管结构。 碳纳米管结构包括通过范德华吸引力端对端连接的多个碳纳米管。 碳纳米管结构具有两个接合部分，一部分是三角形碳纳米管膜，其是电子发射部分，另一部分是作为支撑部分的碳纳米管线。

    FIELD EMISSION ELECTRON SOURCE AND FIELD EMISSION DEVICE USING THE SAME
    115.
    发明申请
    FIELD EMISSION ELECTRON SOURCE AND FIELD EMISSION DEVICE USING THE SAME 有权
    使用该场致发射电子源和场发射装置

    公开(公告)号：US20130221836A1

    公开(公告)日：2013-08-29

    申请号：US13592795

    申请日：2012-08-23

    申请人： YANG WEI ,  SHOU-SHAN FAN

    发明人： YANG WEI ,  SHOU-SHAN FAN

    IPC分类号： H01J1/304 ,  H01J19/32 ,  H01J19/24 ,  B82Y99/00

    CPC分类号： H01J1/304 ,  H01J1/14 ,  H01J1/16 ,  H01J29/04 ,  H01J31/123 ,  H01J2201/30469

    摘要： A field emission electron source includes a carbon nanotube micro-tip structure. The carbon nanotube micro-tip structure includes an insulating substrate and a patterned carbon nanotube film structure. The insulating substrate includes a surface. The surface includes an edge. The patterned carbon nanotube film structure is partially arranged on the surface of the insulating substrate. The patterned carbon nanotube film structure includes two strip-shaped arms joined at one end to form a tip portion protruded from the edge of the surface of the insulating substrate and suspended. Each of the two strip-shaped arms includes a plurality of carbon nanotubes parallel to the surface of the insulating substrate. A field emission device is also disclosed.

    摘要翻译： 场发射电子源包括碳纳米管微尖端结构。 碳纳米管微尖端结构包括绝缘基板和图案化碳纳米管薄膜结构。 绝缘基板包括表面。 表面包括边缘。 图案化的碳纳米管膜结构部分地布置在绝缘基板的表面上。 图案化碳纳米管膜结构包括两端连接的带状臂，形成从绝缘基板的表面的边缘突出的顶端部分并悬挂。 两个条形臂中的每一个包括平行于绝缘基板的表面的多个碳纳米管。 还公开了一种场致发射器件。

    METHOD FOR MAKING CARBON NANOTUBE COMPOSITE
    117.
    发明申请
    METHOD FOR MAKING CARBON NANOTUBE COMPOSITE 审中-公开
    制备碳纳米管复合材料的方法

    公开(公告)号：US20130171359A1

    公开(公告)日：2013-07-04

    申请号：US13568487

    申请日：2012-08-07

    申请人： WEI XIONG ,  JIA-PING WANG ,  KAI-LI JIANG ,  SHOU-SHAN FAN

    发明人： WEI XIONG ,  JIA-PING WANG ,  KAI-LI JIANG ,  SHOU-SHAN FAN

    IPC分类号： B05D7/24 ,  B82Y30/00

    CPC分类号： C08J3/212 ,  C08J2327/16 ,  C08K7/24 ,  C08K2201/011 ,  C08L27/16

    摘要： A method for making a carbon nanotube composite film is provided. A PVDF solution is formed by dissolving a PVDF into a first solvent. A number of carbon nanotubes are provided and distributed into the PVDF solution to form a first suspension. The first suspension is transferred into a second solvent to form a second suspension. The second suspension is filtrated to obtain an intermediate, then the intermediate is dried. A solubility of first solvent in the second solvent is greater than a solubility of PVDF in the second solvent.

    摘要翻译： 提供一种制造碳纳米管复合膜的方法。 通过将PVDF溶解在第一溶剂中形成PVDF溶液。 提供多个碳纳米管并分配到PVDF溶液中以形成第一悬浮液。 将第一悬浮液转移到第二溶剂中以形成第二悬浮液。 将第二悬浮液过滤得到中间体，然后将中间体干燥。 第一溶剂在第二溶剂中的溶解度大于PVDF在第二溶剂中的溶解度。

    LIGHT EMITTING DIODE
    119.
    发明申请
    LIGHT EMITTING DIODE 有权
    发光二极管

    公开(公告)号：US20130140593A1

    公开(公告)日：2013-06-06

    申请号：US13477273

    申请日：2012-05-22

    申请人： ZHEN-DONG ZHU ,  QUN-QING LI ,  LI-HUI ZHANG ,  MO CHEN ,  SHOU-SHAN FAN

    发明人： ZHEN-DONG ZHU ,  QUN-QING LI ,  LI-HUI ZHANG ,  MO CHEN ,  SHOU-SHAN FAN

    IPC分类号： H01L33/60 ,  H01L33/62

    CPC分类号： H01L33/24 ,  H01L33/32

    摘要： A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped.

    摘要翻译： 提供了包括基板，第一半导体层，有源层和第二半导体层的发光二极管。 第一半导体层包括第一表面和第二表面，并且第一表面连接到基板。 有源层和第二半导体层以该顺序堆叠在第二表面上，并且第二半导体层远离有源层的表面被配置为发光表面。 第一电极与第一半导体层电连接。 第二电极与第二半导体层电连接。 多个三维纳米结构位于第一半导体层的第一表面的表面上并排排列，并且每个三维纳米结构的横截面是M形的。

    LIGHT EMITTING DIODE
    120.
    发明申请
    LIGHT EMITTING DIODE 有权
    发光二极管

    公开(公告)号：US20130140519A1

    公开(公告)日：2013-06-06

    申请号：US13479227

    申请日：2012-05-23

    申请人： ZHEN-DONG ZHU ,  QUN-QING LI ,  LI-HUI ZHANG ,  MO CHEN ,  SHOU-SHAN FAN

    发明人： ZHEN-DONG ZHU ,  QUN-QING LI ,  LI-HUI ZHANG ,  MO CHEN ,  SHOU-SHAN FAN

    IPC分类号： H01L33/06 ,  B82Y20/00

    CPC分类号： H01L33/24 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22

    摘要： A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and the light emitting surface, and a cross section of each of the three-dimensional nano-structures is M-shaped.

    摘要翻译： 提供了包括基板，第一半导体层，有源层和第二半导体层的发光二极管。 第一半导体层包括第一表面和第二表面，并且第一表面连接到基板。 有源层和第二半导体层依次堆叠在第二表面上，并且远离有源层的第二半导体层的表面被配置为发光表面。 第一电极与第一半导体层电连接。 第二电极与第二半导体层电连接。 多个三维纳米结构位于第一半导体层和发光面的第一表面的表面上，并且每个三维纳米结构的横截面为M形。