公开(公告)号：US20190177669A1

公开(公告)日：2019-06-13

申请号：US16272516

申请日：2019-02-11

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA ,  Tomonori Takahashi

IPC: C11D7/32 ,  C11D7/10 ,  C11D7/06 ,  C11D7/50 ,  C11D7/36 ,  C11D7/34 ,  C11D7/26 ,  H01L21/304

Abstract: An object of the present invention is to provide a treatment liquid for a semiconductor device, which has excellent temporal stability of residue removing performance, and excellent anticorrosion performance for a treatment target. In addition, another object of the present invention is to provide a method for washing a substrate and a method for manufacturing a semiconductor device, each using the treatment liquid.The treatment liquid of an embodiment of the present invention is a treatment liquid for a semiconductor device, including at least one hydroxylamine compound selected from the group consisting of hydroxylamine and a hydroxylamine salt, at least one basic compound selected from the group consisting of an amine compound other than the hydroxylamine compound and a quaternary ammonium hydroxide salt, and at least one selected from the group consisting of a reducing agent other than the hydroxylamine compound and a chelating agent, and having a pH of 10 or more.

公开(公告)号：US20190071623A1

公开(公告)日：2019-03-07

申请号：US16180107

申请日：2018-11-05

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA ,  Tomonori TAKAHASHI

IPC: C11D17/08 ,  C11D7/08 ,  C11D7/28 ,  C11D7/50 ,  C23G1/06 ,  C23F1/26 ,  G03F7/42 ,  H01L21/304 ,  H01L21/308

Abstract: A treatment liquid is a treatment liquid for a semiconductor device, containing a fluorine-containing compound, a corrosion inhibitor, and calcium, in which the mass content ratio of the calcium to the fluorine-containing compound in the treatment liquid is 1.0×10−10 to 1.0×10−4.

公开(公告)号：US20190062159A1

公开(公告)日：2019-02-28

申请号：US16170638

申请日：2018-10-25

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA

IPC: C01B15/023 ,  C11D7/04 ,  C11D11/00 ,  C11D17/00 ,  C11D17/04

Abstract: An object of the present invention is to provide a composition including hydrogen peroxide, which can be used for semiconductor device manufacturing and which exhibits an excellent storage stability and has a reduced effect of defects on a semiconductor substrate. Further, another object of the present invention is to provide a method for producing the composition including hydrogen peroxide, and a composition reservoir for storing the composition.The composition of the present invention includes hydrogen peroxide, an acid, and a Fe component, in which a content of the Fe component is 10−5 to 102 in terms of mass ratio with respect to the content of the acid.

公开(公告)号：US20170023858A1

公开(公告)日：2017-01-26

申请号：US15288588

申请日：2016-10-07

Applicant: FUJIFILM Corporation

Inventor： Hirotaka TAKISHITA ,  Tetsuya KAMIMURA ,  Hirokazu KYOTA ,  Toshihide EZOE ,  Kazuto SHIMADA

IPC: G03F7/00 ,  G03F7/039 ,  G03F7/029 ,  G02B5/22 ,  G03F7/16 ,  G03F7/20 ,  G03F7/30 ,  C09B67/46 ,  G03F7/004

CPC classification number: G03F7/0007 ,  C08F2/44 ,  C08F2/48 ,  C08L101/00 ,  C09B67/0022 ,  C09B67/0033 ,  C09B67/0084 ,  C09B67/009 ,  C09D4/00 ,  G02B5/201 ,  G02B5/223 ,  G03F7/0045 ,  G03F7/027 ,  G03F7/029 ,  G03F7/039 ,  G03F7/105 ,  G03F7/162 ,  G03F7/20 ,  G03F7/3021 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14649 ,  H01L27/14685 ,  C08F2222/1013 ,  C08F222/1006 ,  C08F2222/104 ,  C08F2222/225

Abstract: A coloring composition includes colorants, polymerizable compounds, and a resin, in which a ratio P/M of a mass P of the colorants to a mass M of the polymerizable compounds is 0.05 to 0.35, a content of the polymerizable compounds is 25 to 65 mass % with respect to a total solid content of the coloring composition, a ratio A/B of a minimum value A of an absorbance in a wavelength range of 400 nm or longer and shorter than 580 nm to a minimum value B of an absorbance in a wavelength range of 580 nm to 770 nm is 0.3 to 3, and a ratio C/D of a minimum value C of an absorbance in a wavelength range of 400 nm to 750 nm to a maximum value D of an absorbance in a wavelength range of 850 nm to 1300 nm is 5 or higher.

Abstract translation: 着色组合物包括着色剂，可聚合化合物和树脂，其中着色剂的质量P与可聚合化合物的质量M的比率P / M为0.05至0.35，可聚合化合物的含量为25至65 相对于着色组合物的总固体成分的质量％，400nm以上且小于580nm的波长范围内的吸光度的最小值A的比A / B与吸光度的最小值B 580nm至770nm的波长范围为0.3至3，并且在400nm至750nm的波长范围内的吸光度的最小值C的比C / D与波长范围内的吸光度的最大值D 为850nm〜1300nm，为5以上。

公开(公告)号：US20170010528A1

公开(公告)日：2017-01-12

申请号：US15271302

申请日：2016-09-21

Applicant: FUJIFILM Corporation

Inventor： Hirotaka TAKISHITA ,  Tetsuya KAMIMURA ,  Takuya TSURUTA ,  Kyouhei ARAYAMA ,  Kazuto SHIMADA ,  Masahiro MORI

IPC: G03F7/00 ,  C09B57/00 ,  G03F7/004 ,  G03F7/16 ,  G03F7/20 ,  H04N5/33 ,  G03F7/032 ,  G03F7/033 ,  G03F7/038 ,  G03F7/031 ,  G02B5/22 ,  G02B5/20 ,  C09B67/46 ,  G03F7/26

Abstract: A coloring composition includes colorants and a resin, in which a ratio A/B of a minimum value A of an absorbance in a wavelength range of 400 to 830 nm to a maximum value B of an absorbance in a wavelength range of 1000 to 1300 nm is 4.5 or higher.

Abstract translation: 着色组合物包括着色剂和树脂，其中在400至830nm的波长范围内的吸光度的最小值A的比A / B与1000至1300nm的波长范围内的吸光度的最大值B 为4.5以上。

公开(公告)号：US20150255309A1

公开(公告)日：2015-09-10

申请号：US14722811

申请日：2015-05-27

Applicant: FUJIFILM CORPORATION

Inventor： Yoshinori NISHIWAKI ,  Tetsuya KAMIMURA ,  Tadashi INABA ,  Atsushi MIZUTANI

IPC: H01L21/3213 ,  C09K13/00 ,  H01L21/033

CPC classification number: H01L21/32134 ,  C09K13/00 ,  H01L21/02063 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/32139

Abstract: An etching method containing the step of processing a substrate having a first layer containing titanium nitride (TiN) and a second layer containing a transition metal by bringing an etching liquid into contact with the substrate and thereby removing the first layer, wherein the first layer has a surface oxygen content from 0.1 to 10% by mole, and wherein the etching liquid comprises an ammonia compound and an oxidizing agent, and has a pH of from 7 to 14.

Abstract translation: 一种蚀刻方法，包括通过使蚀刻液体与基板接触从而去除第一层，来处理具有包含氮化钛（TiN）的第一层的基板和包含过渡金属的第二层的步骤，其中第一层具有 表面氧含量为0.1〜10摩尔％，其中，蚀刻液含有氨化合物和氧化剂，pH为7〜14。

公开(公告)号：US20130244444A1

公开(公告)日：2013-09-19

申请号：US13770409

申请日：2013-02-19

Applicant: FUJIFILM CORPORATION

Inventor： Atsushi MIZUTANI ,  Akiko YOSHII ,  Tetsuya KAMIMURA ,  Tetsuya SHIMIZU

IPC: C09K13/08 ,  H01L21/306

CPC classification number: H01L21/31111 ,  C09K13/08 ,  H01L21/28158 ,  H01L21/30604

Abstract: A method of producing a semiconductor substrate product, having the steps of: providing an etching liquid containing water, a hydrofluoric acid compound, and a water-soluble polymer; and applying the etching liquid to a semiconductor substrate, the semiconductor substrate having a silicon layer and a silicon oxide layer, the silicon layer containing an impurity, and thereby selectively etching the silicon oxide layer.