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    SOLID-STATE IMAGING DEVICE
    111.
    发明申请
    SOLID-STATE IMAGING DEVICE 有权
    固态成像装置

    公开(公告)号：US20120050589A1

    公开(公告)日：2012-03-01

    申请号：US13039502

    申请日：2011-03-03

    Applicant: Risako Ueno ,  Yoshinori Iida ,  Hideyuki Funaki

    Inventor： Risako Ueno ,  Yoshinori Iida ,  Hideyuki Funaki

    IPC: H04N9/083

    CPC classification number: H04N9/045

    Abstract: According to an embodiment, a solid-state imaging device includes: an imaging element formed on a semiconductor substrate; a first optical system configured to focus an image of a subject on an imaging plane; a second optical system including a microlens array including a plurality of microlenses corresponding to the pixel blocks, and re-focusing the image of the imaging plane onto the pixel blocks corresponding to the respective microlenses; a first filter placed on the second optical system, and including a plurality of first color filters corresponding to the microlenses; and a second filter placed on the imaging element, and including a plurality of second color filters corresponding to the first color filters of the first filter. The first and second filters are designed so that the first and second color filters deviate to a periphery of the imaging area, the deviation becoming larger toward the periphery of the imaging area.

    Abstract translation: 根据实施例，固态成像装置包括：形成在半导体衬底上的成像元件; 配置成将被摄体的图像聚焦在成像平面上的第一光学系统; 包括微透镜阵列的第二光学系统，所述微透镜阵列包括对应于所述像素块的多个微透镜，以及将所述成像平面的图像重新聚焦到与所述各个微透镜相对应的像素块上; 放置在第二光学系统上的第一滤光器，并且包括对应于微透镜的多个第一滤色器; 以及放置在成像元件上的第二滤光器，并且包括与第一滤光器的第一滤色器相对应的多个第二滤色器。 第一滤波器和第二滤波器被设计成使得第一和第二滤色器偏离成像区域的周边，偏离朝向成像区域的周围变大。

    SEMICONDUCTOR MEMORY AND METHOD OF MANUFACTURING THE SAME
    113.
    发明申请
    SEMICONDUCTOR MEMORY AND METHOD OF MANUFACTURING THE SAME 有权
    半导体存储器及其制造方法

    公开(公告)号：US20100187594A1

    公开(公告)日：2010-07-29

    申请号：US12710172

    申请日：2010-02-22

    Applicant: Makoto Mizukami ,  Hideyuki Funaki

    Inventor： Makoto Mizukami ,  Hideyuki Funaki

    IPC: H01L29/788 ,  H01L21/336

    CPC classification number: H01L29/7881 ,  H01L27/115 ,  H01L27/11519 ,  H01L27/11521 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11568 ,  H01L27/11582 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/792 ,  H01L29/7926

    Abstract: A semiconductor memory includes a semiconductor substrate, a buried insulating film formed on a part of an upper surface of the semiconductor substrate, and a semiconductor layer formed on another part of the upper surface of the semiconductor substrate. Each of the memory cell transistors comprises a first-conductivity-type source region, a first-conductivity-type drain region, and a first-conductivity-type channel region arranged in the semiconductor layer in the column direction, and a gate portion formed on a side surface of the channel region in the row direction.

    Abstract translation: 半导体存储器包括半导体衬底，形成在半导体衬底的上表面的一部分上的埋入绝缘膜和形成在半导体衬底的上表面的另一部分上的半导体层。 每个存储单元晶体管包括在列方向上布置在半导体层中的第一导电类型源极区，第一导电型漏极区和第一导电类型沟道区，以及形成在 沟道区域的行方向的侧面。

    SENSOR DEVICE, AND PORTABLE COMMUNICATION TERMINAL AND ELECTRONIC DEVICE USING THE SENSOR DEVICE
    114.
    发明申请
    SENSOR DEVICE, AND PORTABLE COMMUNICATION TERMINAL AND ELECTRONIC DEVICE USING THE SENSOR DEVICE 有权
    传感器装置和使用传感器装置的便携式通信终端和电子设备

    公开(公告)号：US20100026319A1

    公开(公告)日：2010-02-04

    申请号：US12578201

    申请日：2009-10-13

    Applicant: Masako Ogata ,  Kazuhiro Suzuki ,  Hideyuki Funaki ,  Kazuhiko Itaya

    Inventor： Masako Ogata ,  Kazuhiro Suzuki ,  Hideyuki Funaki ,  Kazuhiko Itaya

    IPC: G01R27/26

    CPC classification number: H03K17/955 ,  G01D5/2417 ,  H03K2217/960755

    Abstract: A sensor device for detecting a positional relationship between a first member and a second member, includes a first electrode provided on a surface of the first member and supplied with an alternating signal of a first frequency, a second electrode provided on a surface of the second member and supplied with an alternating signal of a second frequency, and a beat detector which detects a beat frequency component corresponding to a difference between the first and second frequencies indicative of the positional relationship between the first member and the second member, when the positional relationship between the first and second members changes to cause the first electrode to approach the second electrode.

    Abstract translation: 一种用于检测第一构件和第二构件之间的位置关系的传感器装置，包括设置在第一构件的表面上并被提供有第一频率的交变信号的第一电极，设置在第二构件的表面上的第二电极 并且提供有第二频率的交替信号;以及拍子检测器，当拍摄位置关系时，检测与表示第一和第二构件之间的位置关系的第一和第二频率之间的差对应的拍频分量 在第一和第二构件之间改变以使第一电极接近第二电极。

    Power amplifier
    115.
    发明授权
    Power amplifier 失效
    功率放大器

    公开(公告)号：US07619470B2

    公开(公告)日：2009-11-17

    申请号：US11687770

    申请日：2007-03-19

    Applicant: Kazuhide Abe ,  Tadahiro Sasaki ,  Kazuhiko Itaya ,  Hideyuki Funaki

    Inventor： Kazuhide Abe ,  Tadahiro Sasaki ,  Kazuhiko Itaya ,  Hideyuki Funaki

    IPC: H03F3/217

    CPC classification number: H03F3/2176 ,  H03F1/02 ,  H03F3/245 ,  H03F2200/366 ,  H03F2200/391 ,  H03F2203/21178 ,  H03G1/0088

    Abstract: A power amplifier includes: a plurality of field effect transistors connected in parallel and each having a first and second ends, the first end being connected to ground; an amplifying unit which includes at least one of an inductor, a capacitor and a band pass filter and has a third and fourth ends, the third end being connected to the second ends of the field effect transistors, and the fourth end outputting an amplified output signal; and an amplitude controller which sends control signals respectively to gates of the field effect transistors to turn on or off the field effect transistors based on an address signal for performing selection on the field effect transistors and a clock signal. Channel widths of the field effect transistors are different from each other.

    Abstract translation: 功率放大器包括：多个并联连接的场效应晶体管，每个具有第一和第二端，所述第一端连接到地; 放大单元，其包括电感器，电容器和带通滤波器中的至少一个，并具有第三和第四端，第三端连接到场效应晶体管的第二端，第四端输出放大的输出 信号; 以及幅度控制器，其基于用于对场效应晶体管进行选择的地址信号和时钟信号，分别向场效应晶体管的栅极发送控制信号以导通或关闭场效应晶体管。 场效应晶体管的沟道宽度彼此不同。

    SENSOR DEVICE, AND SENSOR SYSTEM AND ELECTRONIC DEVICE USING THE SENSOR DEVICE
    117.
    发明申请
    SENSOR DEVICE, AND SENSOR SYSTEM AND ELECTRONIC DEVICE USING THE SENSOR DEVICE 有权
    传感器装置和传感器系统以及使用传感器装置的电子装置

    公开(公告)号：US20090086879A1

    公开(公告)日：2009-04-02

    申请号：US12234732

    申请日：2008-09-22

    Applicant: Masako Ogata ,  Kazuhiro Suzuki ,  Hideyuki Funaki ,  Kazuhiko Itaya

    Inventor： Masako Ogata ,  Kazuhiro Suzuki ,  Hideyuki Funaki ,  Kazuhiko Itaya

    IPC: G01B7/14

    CPC classification number: G01D5/2417 ,  H03K17/975 ,  H04M1/0245

    Abstract: A sensor device which detects a positional relationship between an first member and second member, includes a signal source generating an electrical signal, a first electrode receiving the electrical signal and storing an electrical charge at a first part on the first member, a second electrode inducing an electrical charge at the second part on the second member, a third electrode inducing an electrical charge at the third part on the second member, a fourth electrode inducing an electrical charge at the fourth part on the first member, a reference electrode disposed at a fifth part on the second member to be connected to a reference voltage point, a fifth electrode inducing an electrical charge at the sixth part on the first member, and a differential amplifier amplifying a voltage difference between the fourth electrode and the fifth electrode and outputting a difference signal.

    Abstract translation: 检测第一构件和第二构件之间的位置关系的传感器装置包括产生电信号的信号源，接收电信号的第一电极和在第一构件的第一部分处存储电荷的第二电极， 在第二构件上的第二部分处的电荷，在第二构件上的第三部分处引起电荷的第三电极，在第一构件的第四部分处引起电荷的第四电极，设置在第二构件上的参考电极 要连接到参考电压点的第二构件的第五部分，在第一构件的第六部分处引起电荷的第五电极和放大第四电极和第五电极之间的电压差的差分放大器，并输出 差分信号。

    Power amplifier and transmission and reception system
    118.
    发明授权
    Power amplifier and transmission and reception system 有权
    功率放大器和发射和接收系统

    公开(公告)号：US07508268B2

    公开(公告)日：2009-03-24

    申请号：US11857737

    申请日：2007-09-19

    Applicant: Tadahiro Sasaki ,  Kazuhide Abe ,  Kazuhiko Itaya ,  Hideyuki Funaki

    Inventor： Tadahiro Sasaki ,  Kazuhide Abe ,  Kazuhiko Itaya ,  Hideyuki Funaki

    IPC: H03F3/68

    CPC classification number: H03F3/604 ,  H01L21/823425 ,  H01L27/088 ,  H03F1/3205 ,  H03F3/16 ,  H03F3/607 ,  H03F3/72 ,  H03F2200/108 ,  H03F2200/451 ,  H03F2200/468 ,  H03F2200/543 ,  H03F2200/78 ,  H03F2203/7236

    Abstract: A power amplifier includes: a first multi-finger FET formed on a semiconductor substrate; a second multi-finger FET formed on the semiconductor substrate; a first temperature detector which detects a channel temperature of the first FET; a second temperature detector which detects a channel temperature of the second FET; a third temperature detector which detects a temperature of the semiconductor substrate; a first detection circuit detecting a difference between an output of the first temperature detector and an output of the third temperature detector and converting the difference to thermoelectromotive force; a second detection circuit detecting a difference between an output of the second temperature detector and the output of the third temperature detector and converting the difference to thermoelectromotive force; and a comparator comparing outputs of the first and second detection circuits with each other to turn on one of the first and second switches and turn off the other.

    Abstract translation: 功率放大器包括：形成在半导体衬底上的第一多指FET; 形成在半导体衬底上的第二多指FET; 第一温度检测器，其检测第一FET的通道温度; 第二温度检测器，其检测第二FET的通道温度; 第三温度检测器，其检测半导体衬底的温度; 第一检测电路，检测第一温度检测器的输出和第三温度检测器的输出之间的差异，并将差值转换为热电动势; 第二检测电路，检测第二温度检测器的输出与第三温度检测器的输出之间的差异，并将差值转换为热电动势; 以及比较器，将第一和第二检测电路的输出彼此进行比较，以打开第一和第二开关中的一个并且关闭另一个。

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