公开(公告)号：US20080238550A1

公开(公告)日：2008-10-02

申请号：US11857737

申请日：2007-09-19

申请人： Tadahiro SASAKI ,  Kazuhide Abe ,  Kazuhiko Itaya ,  Hideyuki Funaki

发明人： Tadahiro SASAKI ,  Kazuhide Abe ,  Kazuhiko Itaya ,  Hideyuki Funaki

IPC分类号： H03F3/16 ,  H03F3/68

CPC分类号： H03F3/604 ,  H01L21/823425 ,  H01L27/088 ,  H03F1/3205 ,  H03F3/16 ,  H03F3/607 ,  H03F3/72 ,  H03F2200/108 ,  H03F2200/451 ,  H03F2200/468 ,  H03F2200/543 ,  H03F2200/78 ,  H03F2203/7236

摘要： A power amplifier includes: a first multi-finger FET formed on a semiconductor substrate; a second multi-finger FET formed on the semiconductor substrate; a first temperature detector which detects a channel temperature of the first FET; a second temperature detector which detects a channel temperature of the second FET; a third temperature detector which detects a temperature of the semiconductor substrate; a first detection circuit detecting a difference between an output of the first temperature detector and an output of the third temperature detector and converting the difference to thermoelectromotive force; a second detection circuit detecting a difference between an output of the second temperature detector and the output of the third temperature detector and converting the difference to thermoelectromotive force; and a comparator comparing outputs of the first and second detection circuits with each other to turn on one of the first and second switches and turn off the other.

摘要翻译： 功率放大器包括：形成在半导体衬底上的第一多指FET; 形成在半导体衬底上的第二多指FET; 第一温度检测器，其检测第一FET的通道温度; 第二温度检测器，其检测第二FET的通道温度; 第三温度检测器，其检测半导体衬底的温度; 第一检测电路，检测第一温度检测器的输出和第三温度检测器的输出之间的差异，并将差值转换为热电动势; 第二检测电路，检测第二温度检测器的输出与第三温度检测器的输出之间的差异，并将差值转换为热电动势; 以及比较器，将第一和第二检测电路的输出彼此进行比较，以打开第一和第二开关中的一个并且关闭另一个。

公开(公告)号：US07619470B2

公开(公告)日：2009-11-17

申请号：US11687770

申请日：2007-03-19

申请人： Kazuhide Abe ,  Tadahiro Sasaki ,  Kazuhiko Itaya ,  Hideyuki Funaki

发明人： Kazuhide Abe ,  Tadahiro Sasaki ,  Kazuhiko Itaya ,  Hideyuki Funaki

IPC分类号： H03F3/217

CPC分类号： H03F3/2176 ,  H03F1/02 ,  H03F3/245 ,  H03F2200/366 ,  H03F2200/391 ,  H03F2203/21178 ,  H03G1/0088

摘要： A power amplifier includes: a plurality of field effect transistors connected in parallel and each having a first and second ends, the first end being connected to ground; an amplifying unit which includes at least one of an inductor, a capacitor and a band pass filter and has a third and fourth ends, the third end being connected to the second ends of the field effect transistors, and the fourth end outputting an amplified output signal; and an amplitude controller which sends control signals respectively to gates of the field effect transistors to turn on or off the field effect transistors based on an address signal for performing selection on the field effect transistors and a clock signal. Channel widths of the field effect transistors are different from each other.

摘要翻译： 功率放大器包括：多个并联连接的场效应晶体管，每个具有第一和第二端，所述第一端连接到地; 放大单元，其包括电感器，电容器和带通滤波器中的至少一个，并具有第三和第四端，第三端连接到场效应晶体管的第二端，第四端输出放大的输出 信号; 以及幅度控制器，其基于用于对场效应晶体管进行选择的地址信号和时钟信号，分别向场效应晶体管的栅极发送控制信号以导通或关闭场效应晶体管。 场效应晶体管的沟道宽度彼此不同。

公开(公告)号：US07508268B2

公开(公告)日：2009-03-24

申请号：US11857737

申请日：2007-09-19

申请人： Tadahiro Sasaki ,  Kazuhide Abe ,  Kazuhiko Itaya ,  Hideyuki Funaki

发明人： Tadahiro Sasaki ,  Kazuhide Abe ,  Kazuhiko Itaya ,  Hideyuki Funaki

IPC分类号： H03F3/68

CPC分类号： H03F3/604 ,  H01L21/823425 ,  H01L27/088 ,  H03F1/3205 ,  H03F3/16 ,  H03F3/607 ,  H03F3/72 ,  H03F2200/108 ,  H03F2200/451 ,  H03F2200/468 ,  H03F2200/543 ,  H03F2200/78 ,  H03F2203/7236

摘要： A power amplifier includes: a first multi-finger FET formed on a semiconductor substrate; a second multi-finger FET formed on the semiconductor substrate; a first temperature detector which detects a channel temperature of the first FET; a second temperature detector which detects a channel temperature of the second FET; a third temperature detector which detects a temperature of the semiconductor substrate; a first detection circuit detecting a difference between an output of the first temperature detector and an output of the third temperature detector and converting the difference to thermoelectromotive force; a second detection circuit detecting a difference between an output of the second temperature detector and the output of the third temperature detector and converting the difference to thermoelectromotive force; and a comparator comparing outputs of the first and second detection circuits with each other to turn on one of the first and second switches and turn off the other.

摘要翻译： 功率放大器包括：形成在半导体衬底上的第一多指FET; 形成在半导体衬底上的第二多指FET; 第一温度检测器，其检测第一FET的通道温度; 第二温度检测器，其检测第二FET的通道温度; 第三温度检测器，其检测半导体衬底的温度; 第一检测电路，检测第一温度检测器的输出和第三温度检测器的输出之间的差异，并将差值转换为热电动势; 第二检测电路，检测第二温度检测器的输出与第三温度检测器的输出之间的差异，并将差值转换为热电动势; 以及比较器，将第一和第二检测电路的输出彼此进行比较，以打开第一和第二开关中的一个并且关闭另一个。

公开(公告)号：US20080258815A1

公开(公告)日：2008-10-23

申请号：US11871451

申请日：2007-10-12

申请人： Kazuhide ABE ,  Tadahiro Sasaki ,  Kazuhiko Itaya ,  Hideyuki Funaki

发明人： Kazuhide ABE ,  Tadahiro Sasaki ,  Kazuhiko Itaya ,  Hideyuki Funaki

IPC分类号： H03F3/16

CPC分类号： H03F3/245 ,  H01L23/66 ,  H01L27/0207 ,  H01L2223/6644 ,  H01L2924/0002 ,  H01L2924/3011 ,  H03F3/195 ,  H03F3/211 ,  H03F3/601 ,  H03F2200/366 ,  H03F2200/451 ,  H03F2203/21178 ,  H01L2924/00

摘要： An object is to provide a high frequency power amplifier in which lowering of output power during operation is prevented, influence of thermal noise is suppressed, high frequency operation is stable, and long-term reliability is ensured. The high frequency power amplifier includes a plurality of transistors having gate electrodes, source regions and drain regions, the gate electrodes, source regions and drain regions being respectively connected in common, and a plurality of acoustic reflection layers being buried in portions of the semiconductor substrate, the portions being located between adjacent transistors, the acoustic reflection layers being disposed in a direction which is oblique to a length direction of the gate electrode.

摘要翻译： 本发明的目的是提供一种高频功率放大器，其中防止了操作期间输出功率的降低，热噪声的影响被抑制，高频操作稳定，并且确保了长期的可靠性。 高频功率放大器包括具有栅电极，源极区和漏极区的多个晶体管，栅电极，源极区和漏区共同分别连接，并且多个声反射层被埋在半导体衬底的一部分中 ，所述部分位于相邻的晶体管之间，声反射层沿与栅电极的长度方向倾斜的方向设置。

公开(公告)号：US08648431B2

公开(公告)日：2014-02-11

申请号：US13220116

申请日：2011-08-29

申请人： Kazuhide Abe ,  Tadahiro Sasaki ,  Atsuko Iida ,  Kazuhiko Itaya ,  Takashi Kawakubo

发明人： Kazuhide Abe ,  Tadahiro Sasaki ,  Atsuko Iida ,  Kazuhiko Itaya ,  Takashi Kawakubo

IPC分类号： H01L29/84

CPC分类号： H03J3/20 ,  H03B5/326 ,  H03H9/02566

摘要： According to one embodiment, an acoustic semiconductor device includes an element unit, and a first terminal. The element unit includes an acoustic resonance unit. The acoustic resonance unit includes a semiconductor crystal. An acoustic standing wave is excitable in the acoustic resonance unit and is configured to be synchronously coupled with electric charge density within at least one portion of the semiconductor crystal via deformation-potential coupling effect. The first terminal is electrically connected to the element unit. At least one selected from outputting and inputting an electrical signal is implementable via the first terminal. The electrical signal is coupled with the electric charge density. The outputting the electrical signal is from the acoustic resonance unit, and the inputting the electrical signal is into the acoustic resonance unit.

摘要翻译： 根据一个实施例，声学半导体器件包括元件单元和第一端子。 元件单元包括声共振单元。 声共振单元包括半导体晶体。 声驻波在声共振单元中是可兴奋的，并且被配置为通过变形电势耦合效应与半导体晶体的至少一部分内的电荷密度同步耦合。 第一端子电连接到元件单元。 从输出和输入电信号中选出的至少一个可经由第一终端实现。 电信号与电荷密度耦合。 输出电信号来自声共振单元，并且输入电信号进入声共振单元。

公开(公告)号：US08324707B2

公开(公告)日：2012-12-04

申请号：US13050545

申请日：2011-03-17

申请人： Tadahiro Sasaki ,  Kazuhide Abe ,  Atsuko Iida ,  Kazuhiko Itaya

发明人： Tadahiro Sasaki ,  Kazuhide Abe ,  Atsuko Iida ,  Kazuhiko Itaya

IPC分类号： H01L27/105

CPC分类号： H01L27/088 ,  H01L21/823493 ,  H01L27/0207 ,  H01L27/0922 ,  H01L29/41758 ,  H01L29/4238 ,  H01L29/78

摘要： According to an embodiment, a power amplifier is provided with at least one first growth ring gate structure and multiple second growth ring gate structures. The first growth ring gate structure is bounded by a semiconductor layer and performs a power amplification operation. The multiple second growth ring gate structures are bounded by the semiconductor layer and are arranged adjacently around the first growth ring gate structure in a surrounding manner. When the first growth ring gate structure performs a power amplification operation, the multiple second growth ring gate structures are depleted by applying a reverse bias to the multiple second growth ring gate structures whereby the depleted multiple second growth ring gate structures isolate the first growth ring gate structure from a surrounding portion.

摘要翻译： 根据实施例，功率放大器设置有至少一个第一增长环栅极结构和多个第二增长环栅极结构。 第一生长环栅极结构由半导体层限制并进行功率放大操作。 多个第二生长环形栅极结构由半导体层限制，并且以周围的方式围绕第一生长环栅极结构相邻布置。 当第一生长环栅极结构执行功率放大操作时，通过向多个第二生长环栅极结构施加反向偏压来耗尽多个第二生长环栅结构，由此耗尽的多个第二生长环栅极结构将第一生长环栅极隔离 结构从周围部分。

公开(公告)号：US20050059375A1

公开(公告)日：2005-03-17

申请号：US10890998

申请日：2004-07-15

申请人： Kazuhide Abe ,  Mayumi Morizuka ,  Ryoichi Ohara ,  Kenya Sano ,  Naoko Yanase ,  Takaaki Yasumoto ,  Tadahiro Sasaki ,  Kazuhiko Itaya ,  Takashi Kawakubo ,  Hiroshi Yoshida ,  Ryuichi Fujimoto ,  Keiichi Yamaguchi ,  Nobuyuki Itoh ,  Tooru Kozu ,  Takeshi Ookubo

发明人： Kazuhide Abe ,  Mayumi Morizuka ,  Ryoichi Ohara ,  Kenya Sano ,  Naoko Yanase ,  Takaaki Yasumoto ,  Tadahiro Sasaki ,  Kazuhiko Itaya ,  Takashi Kawakubo ,  Hiroshi Yoshida ,  Ryuichi Fujimoto ,  Keiichi Yamaguchi ,  Nobuyuki Itoh ,  Tooru Kozu ,  Takeshi Ookubo

IPC分类号： H03K3/354 ,  H03B1/00 ,  H03B5/30 ,  H03B5/32 ,  H03H9/17 ,  H03L7/08 ,  H03L7/089 ,  H03L7/099 ,  H03L7/10 ,  H03L7/113 ,  H03L7/18 ,  H03L7/187 ,  H03L7/199 ,  H04B1/06 ,  H04B7/00 ,  H04B17/00

CPC分类号： H03L7/099 ,  H03B5/326 ,  H03B2200/0012 ,  H03B2201/0208 ,  H03B2201/025 ,  H03L7/0891 ,  H03L7/10 ,  H03L7/113 ,  H03L7/18 ,  H03L7/199 ,  H03L2207/06

摘要： A voltage controlled oscillator includes a resonator configured to resonate with an initial oscillation frequency during starting period of oscillation and a steady oscillation frequency during a steady state oscillation. The resonator includes a film bulk acoustic resonator having a series resonance frequency higher than the steady oscillation frequency. A negative resistance circuit configured to drive the resonator, has a positive increment for reactance in the steady state oscillation compared with reactance in the starting period.

摘要翻译： 压控振荡器包括谐振器，其构造成在振荡的起始周期期间与初始振荡频率谐振，并且在稳态振荡期间具有稳定的振荡频率。 谐振器包括具有高于稳定振荡频率的串联谐振频率的膜体声波谐振器。 配置为驱动谐振器的负电阻电路与起动周期中的电抗相比，在稳态振荡中具有正增量。

公开(公告)号：US08305147B2

公开(公告)日：2012-11-06

申请号：US13424591

申请日：2012-03-20

申请人： Tadahiro Sasaki ,  Kazuhide Abe ,  Kazuhiko Itaya

发明人： Tadahiro Sasaki ,  Kazuhide Abe ,  Kazuhiko Itaya

IPC分类号： H03F3/14

CPC分类号： H03F3/19 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/1087 ,  H01L29/41758 ,  H01L29/4238 ,  H03F3/245

摘要： A power amplifier according to the embodiments includes: a silicon substrate; an input terminal configured to receive an input of a RF signal; a power dividing unit configured to divide the RF signal into a first signal and a second signal; a phase modulating unit configured to modulate a phase of the second signal; an N well formed in the silicon substrate; a P well formed in the N well and configured to receive an input of the second signal of a modulated phase; a gate insulating film formed on the P well; a gate electrode formed on the gate insulating film and configured to receive an input of the first signal; source and drain electrodes formed on both sides of the gate electrode in the silicon substrate; and an output terminal configured to output a RF signal obtained from the drain electrode.

摘要翻译： 根据实施例的功率放大器包括：硅衬底; 输入终端，被配置为接收RF信号的输入; 功率分配单元，被配置为将RF信号划分为第一信号和第二信号; 相位调制单元，被配置为调制所述第二信号的相位; 在硅衬底中形成N阱; P阱形成在N阱中并且被配置为接收调制相位的第二信号的输入; 在P阱上形成栅极绝缘膜; 栅电极，形成在所述栅极绝缘膜上并被配置为接收所述第一信号的输入; 源极和漏极形成在硅衬底中的栅电极的两侧; 以及输出端子，被配置为输出从漏电极获得的RF信号。

公开(公告)号：US20120241877A1

公开(公告)日：2012-09-27

申请号：US13220116

申请日：2011-08-29

申请人： Kazuhide ABE ,  Tadahiro Sasaki ,  Atsuko Iida ,  Kazuhiko Itaya ,  Takashi Kawakubo

发明人： Kazuhide ABE ,  Tadahiro Sasaki ,  Atsuko Iida ,  Kazuhiko Itaya ,  Takashi Kawakubo

IPC分类号： H01L29/84

CPC分类号： H03J3/20 ,  H03B5/326 ,  H03H9/02566

摘要： According to one embodiment, an acoustic semiconductor device includes an element unit, and a first terminal. The element unit includes an acoustic resonance unit. The acoustic resonance unit includes a semiconductor crystal. An acoustic standing wave is excitable in the acoustic resonance unit and is configured to be synchronously coupled with electric charge density within at least one portion of the semiconductor crystal via deformation-potential coupling effect. The first terminal is electrically connected to the element unit. At least one selected from outputting and inputting an electrical signal is implementable via the first terminal. The electrical signal is coupled with the electric charge density. The outputting the electrical signal is from the acoustic resonance unit, and the inputting the electrical signal is into the acoustic resonance unit.

摘要翻译： 根据一个实施例，声学半导体器件包括元件单元和第一端子。 元件单元包括声共振单元。 声共振单元包括半导体晶体。 声驻波在声共振单元中是可兴奋的，并且被配置为通过变形电势耦合效应与半导体晶体的至少一部分内的电荷密度同步耦合。 第一端子电连接到元件单元。 从输出和输入电信号中选出的至少一个可经由第一终端实现。 电信号与电荷密度耦合。 输出电信号来自声共振单元，并且输入电信号进入声共振单元。

公开(公告)号：US20120235246A1

公开(公告)日：2012-09-20

申请号：US13425735

申请日：2012-03-21

申请人： Kazuhide ABE ,  Tadahiro Sasaki ,  Kazuhiko Itaya

发明人： Kazuhide ABE ,  Tadahiro Sasaki ,  Kazuhiko Itaya

IPC分类号： H01L27/088

CPC分类号： H03F1/02 ,  H01L27/105 ,  H03F1/32 ,  H03F3/211 ,  H03F2200/432

摘要： One embodiment of a semiconductor device provided with a semiconductor substrate, a device region formed on the semiconductor substrate, a device isolation region, which encloses the device region, a plurality of first gate electrodes arranged so as to be parallel to each other on the device region and electrically connected to each other, and a plurality of second gate electrodes arranged so as to be parallel to a plurality of first gate electrodes on the device region and electrically connected to each other, wherein the first gate electrode is arranged so as to be interposed between the second gate electrodes, a gate width of the first gate electrode is smaller than the gate width of the second gate electrode, and a DC bias voltage higher than that of the second gate electrode is applied to the first gate electrode.

摘要翻译： 设置有半导体衬底的半导体器件的一个实施例，形成在半导体衬底上的器件区域，封装器件区域的器件隔离区域，在器件上彼此平行布置的多个第一栅极电极 并且彼此电连接;以及多个第二栅电极，其被布置成与所述器件区域上的多个第一栅极平行并且彼此电连接，其中所述第一栅电极被布置为 插入在第二栅电极之间，第一栅电极的栅极宽度小于第二栅电极的栅极宽度，并且将高于第二栅电极的直流偏置电压施加到第一栅电极。