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    POWER AMPLIFIER AND TRANSMISSION AND RECEPTION SYSTEM
    1.
    发明申请
    POWER AMPLIFIER AND TRANSMISSION AND RECEPTION SYSTEM 有权
    功率放大器和传输和接收系统

    公开(公告)号：US20080238550A1

    公开(公告)日：2008-10-02

    申请号：US11857737

    申请日：2007-09-19

    申请人： Tadahiro SASAKI ,  Kazuhide Abe ,  Kazuhiko Itaya ,  Hideyuki Funaki

    发明人： Tadahiro SASAKI ,  Kazuhide Abe ,  Kazuhiko Itaya ,  Hideyuki Funaki

    IPC分类号： H03F3/16 ,  H03F3/68

    CPC分类号： H03F3/604 ,  H01L21/823425 ,  H01L27/088 ,  H03F1/3205 ,  H03F3/16 ,  H03F3/607 ,  H03F3/72 ,  H03F2200/108 ,  H03F2200/451 ,  H03F2200/468 ,  H03F2200/543 ,  H03F2200/78 ,  H03F2203/7236

    摘要： A power amplifier includes: a first multi-finger FET formed on a semiconductor substrate; a second multi-finger FET formed on the semiconductor substrate; a first temperature detector which detects a channel temperature of the first FET; a second temperature detector which detects a channel temperature of the second FET; a third temperature detector which detects a temperature of the semiconductor substrate; a first detection circuit detecting a difference between an output of the first temperature detector and an output of the third temperature detector and converting the difference to thermoelectromotive force; a second detection circuit detecting a difference between an output of the second temperature detector and the output of the third temperature detector and converting the difference to thermoelectromotive force; and a comparator comparing outputs of the first and second detection circuits with each other to turn on one of the first and second switches and turn off the other.

    摘要翻译： 功率放大器包括：形成在半导体衬底上的第一多指FET; 形成在半导体衬底上的第二多指FET; 第一温度检测器，其检测第一FET的通道温度; 第二温度检测器，其检测第二FET的通道温度; 第三温度检测器，其检测半导体衬底的温度; 第一检测电路，检测第一温度检测器的输出和第三温度检测器的输出之间的差异，并将差值转换为热电动势; 第二检测电路，检测第二温度检测器的输出与第三温度检测器的输出之间的差异，并将差值转换为热电动势; 以及比较器，将第一和第二检测电路的输出彼此进行比较，以打开第一和第二开关中的一个并且关闭另一个。

    Power amplifier
    2.
    发明授权
    Power amplifier 失效
    功率放大器

    公开(公告)号：US07619470B2

    公开(公告)日：2009-11-17

    申请号：US11687770

    申请日：2007-03-19

    申请人： Kazuhide Abe ,  Tadahiro Sasaki ,  Kazuhiko Itaya ,  Hideyuki Funaki

    发明人： Kazuhide Abe ,  Tadahiro Sasaki ,  Kazuhiko Itaya ,  Hideyuki Funaki

    IPC分类号： H03F3/217

    CPC分类号： H03F3/2176 ,  H03F1/02 ,  H03F3/245 ,  H03F2200/366 ,  H03F2200/391 ,  H03F2203/21178 ,  H03G1/0088

    摘要： A power amplifier includes: a plurality of field effect transistors connected in parallel and each having a first and second ends, the first end being connected to ground; an amplifying unit which includes at least one of an inductor, a capacitor and a band pass filter and has a third and fourth ends, the third end being connected to the second ends of the field effect transistors, and the fourth end outputting an amplified output signal; and an amplitude controller which sends control signals respectively to gates of the field effect transistors to turn on or off the field effect transistors based on an address signal for performing selection on the field effect transistors and a clock signal. Channel widths of the field effect transistors are different from each other.

    摘要翻译： 功率放大器包括：多个并联连接的场效应晶体管，每个具有第一和第二端，所述第一端连接到地; 放大单元，其包括电感器，电容器和带通滤波器中的至少一个，并具有第三和第四端，第三端连接到场效应晶体管的第二端，第四端输出放大的输出 信号; 以及幅度控制器，其基于用于对场效应晶体管进行选择的地址信号和时钟信号，分别向场效应晶体管的栅极发送控制信号以导通或关闭场效应晶体管。 场效应晶体管的沟道宽度彼此不同。

    Power amplifier and transmission and reception system
    3.
    发明授权
    Power amplifier and transmission and reception system 有权
    功率放大器和发射和接收系统

    公开(公告)号：US07508268B2

    公开(公告)日：2009-03-24

    申请号：US11857737

    申请日：2007-09-19

    申请人： Tadahiro Sasaki ,  Kazuhide Abe ,  Kazuhiko Itaya ,  Hideyuki Funaki

    发明人： Tadahiro Sasaki ,  Kazuhide Abe ,  Kazuhiko Itaya ,  Hideyuki Funaki

    IPC分类号： H03F3/68

    CPC分类号： H03F3/604 ,  H01L21/823425 ,  H01L27/088 ,  H03F1/3205 ,  H03F3/16 ,  H03F3/607 ,  H03F3/72 ,  H03F2200/108 ,  H03F2200/451 ,  H03F2200/468 ,  H03F2200/543 ,  H03F2200/78 ,  H03F2203/7236

    摘要： A power amplifier includes: a first multi-finger FET formed on a semiconductor substrate; a second multi-finger FET formed on the semiconductor substrate; a first temperature detector which detects a channel temperature of the first FET; a second temperature detector which detects a channel temperature of the second FET; a third temperature detector which detects a temperature of the semiconductor substrate; a first detection circuit detecting a difference between an output of the first temperature detector and an output of the third temperature detector and converting the difference to thermoelectromotive force; a second detection circuit detecting a difference between an output of the second temperature detector and the output of the third temperature detector and converting the difference to thermoelectromotive force; and a comparator comparing outputs of the first and second detection circuits with each other to turn on one of the first and second switches and turn off the other.

    摘要翻译： 功率放大器包括：形成在半导体衬底上的第一多指FET; 形成在半导体衬底上的第二多指FET; 第一温度检测器，其检测第一FET的通道温度; 第二温度检测器，其检测第二FET的通道温度; 第三温度检测器，其检测半导体衬底的温度; 第一检测电路，检测第一温度检测器的输出和第三温度检测器的输出之间的差异，并将差值转换为热电动势; 第二检测电路，检测第二温度检测器的输出与第三温度检测器的输出之间的差异，并将差值转换为热电动势; 以及比较器，将第一和第二检测电路的输出彼此进行比较，以打开第一和第二开关中的一个并且关闭另一个。

    Power amplifier
    4.
    发明授权
    Power amplifier 有权
    功率放大器

    公开(公告)号：US08305147B2

    公开(公告)日：2012-11-06

    申请号：US13424591

    申请日：2012-03-20

    申请人： Tadahiro Sasaki ,  Kazuhide Abe ,  Kazuhiko Itaya

    发明人： Tadahiro Sasaki ,  Kazuhide Abe ,  Kazuhiko Itaya

    IPC分类号： H03F3/14

    CPC分类号： H03F3/19 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/1087 ,  H01L29/41758 ,  H01L29/4238 ,  H03F3/245

    摘要： A power amplifier according to the embodiments includes: a silicon substrate; an input terminal configured to receive an input of a RF signal; a power dividing unit configured to divide the RF signal into a first signal and a second signal; a phase modulating unit configured to modulate a phase of the second signal; an N well formed in the silicon substrate; a P well formed in the N well and configured to receive an input of the second signal of a modulated phase; a gate insulating film formed on the P well; a gate electrode formed on the gate insulating film and configured to receive an input of the first signal; source and drain electrodes formed on both sides of the gate electrode in the silicon substrate; and an output terminal configured to output a RF signal obtained from the drain electrode.

    摘要翻译： 根据实施例的功率放大器包括：硅衬底; 输入终端，被配置为接收RF信号的输入; 功率分配单元，被配置为将RF信号划分为第一信号和第二信号; 相位调制单元，被配置为调制所述第二信号的相位; 在硅衬底中形成N阱; P阱形成在N阱中并且被配置为接收调制相位的第二信号的输入; 在P阱上形成栅极绝缘膜; 栅电极，形成在所述栅极绝缘膜上并被配置为接收所述第一信号的输入; 源极和漏极形成在硅衬底中的栅电极的两侧; 以及输出端子，被配置为输出从漏电极获得的RF信号。

    Semiconductor device
    5.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08039873B2

    公开(公告)日：2011-10-18

    申请号：US12276787

    申请日：2008-11-24

    申请人： Kazuhide Abe ,  Tadahiro Sasaki ,  Kazuhiko Itaya

    发明人： Kazuhide Abe ,  Tadahiro Sasaki ,  Kazuhiko Itaya

    IPC分类号： H01L27/105

    CPC分类号： H01L27/088 ,  H01L23/4824 ,  H01L27/0207 ,  H01L27/105 ,  H01L29/1033 ,  H01L29/41758 ,  H01L29/7831 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： A semiconductor device includes a substrate including an element region having a polygonal shape defined by a plurality of edges, and an isolation region surrounding the element region, and a plurality of gate electrodes provided on the substrate, crossing the element region, arranged in parallel with each other, and electrically connected with each other, wherein at least one of the edges does not cross any of the gate electrodes, and is not parallel to the gate electrodes.

    摘要翻译： 半导体器件包括：衬底，其包括具有由多个边缘限定的多边形形状的元件区域和围绕该元件区域的隔离区域;以及多个栅电极，设置在该衬底上，与该元件区域交叉，与该 彼此电连接，其中至少一个边缘不与任何栅电极交叉，并且不平行于栅电极。

    Acoustic semiconductor device
    6.
    发明授权
    Acoustic semiconductor device 失效
    声学半导体器件

    公开(公告)号：US08648431B2

    公开(公告)日：2014-02-11

    申请号：US13220116

    申请日：2011-08-29

    申请人： Kazuhide Abe ,  Tadahiro Sasaki ,  Atsuko Iida ,  Kazuhiko Itaya ,  Takashi Kawakubo

    发明人： Kazuhide Abe ,  Tadahiro Sasaki ,  Atsuko Iida ,  Kazuhiko Itaya ,  Takashi Kawakubo

    IPC分类号： H01L29/84

    CPC分类号： H03J3/20 ,  H03B5/326 ,  H03H9/02566

    摘要： According to one embodiment, an acoustic semiconductor device includes an element unit, and a first terminal. The element unit includes an acoustic resonance unit. The acoustic resonance unit includes a semiconductor crystal. An acoustic standing wave is excitable in the acoustic resonance unit and is configured to be synchronously coupled with electric charge density within at least one portion of the semiconductor crystal via deformation-potential coupling effect. The first terminal is electrically connected to the element unit. At least one selected from outputting and inputting an electrical signal is implementable via the first terminal. The electrical signal is coupled with the electric charge density. The outputting the electrical signal is from the acoustic resonance unit, and the inputting the electrical signal is into the acoustic resonance unit.

    摘要翻译： 根据一个实施例，声学半导体器件包括元件单元和第一端子。 元件单元包括声共振单元。 声共振单元包括半导体晶体。 声驻波在声共振单元中是可兴奋的，并且被配置为通过变形电势耦合效应与半导体晶体的至少一部分内的电荷密度同步耦合。 第一端子电连接到元件单元。 从输出和输入电信号中选出的至少一个可经由第一终端实现。 电信号与电荷密度耦合。 输出电信号来自声共振单元，并且输入电信号进入声共振单元。

    Power amplifier
    7.
    发明授权
    Power amplifier 失效
    功率放大器

    公开(公告)号：US08324707B2

    公开(公告)日：2012-12-04

    申请号：US13050545

    申请日：2011-03-17

    申请人： Tadahiro Sasaki ,  Kazuhide Abe ,  Atsuko Iida ,  Kazuhiko Itaya

    发明人： Tadahiro Sasaki ,  Kazuhide Abe ,  Atsuko Iida ,  Kazuhiko Itaya

    IPC分类号： H01L27/105

    CPC分类号： H01L27/088 ,  H01L21/823493 ,  H01L27/0207 ,  H01L27/0922 ,  H01L29/41758 ,  H01L29/4238 ,  H01L29/78

    摘要： According to an embodiment, a power amplifier is provided with at least one first growth ring gate structure and multiple second growth ring gate structures. The first growth ring gate structure is bounded by a semiconductor layer and performs a power amplification operation. The multiple second growth ring gate structures are bounded by the semiconductor layer and are arranged adjacently around the first growth ring gate structure in a surrounding manner. When the first growth ring gate structure performs a power amplification operation, the multiple second growth ring gate structures are depleted by applying a reverse bias to the multiple second growth ring gate structures whereby the depleted multiple second growth ring gate structures isolate the first growth ring gate structure from a surrounding portion.

    摘要翻译： 根据实施例，功率放大器设置有至少一个第一增长环栅极结构和多个第二增长环栅极结构。 第一生长环栅极结构由半导体层限制并进行功率放大操作。 多个第二生长环形栅极结构由半导体层限制，并且以周围的方式围绕第一生长环栅极结构相邻布置。 当第一生长环栅极结构执行功率放大操作时，通过向多个第二生长环栅极结构施加反向偏压来耗尽多个第二生长环栅结构，由此耗尽的多个第二生长环栅极结构将第一生长环栅极隔离 结构从周围部分。

    Semiconductor device
    9.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US07851833B2

    公开(公告)日：2010-12-14

    申请号：US12409926

    申请日：2009-03-24

    申请人： Kazuhide Abe ,  Tadahiro Sasaki ,  Kazuhiko Itaya

    发明人： Kazuhide Abe ,  Tadahiro Sasaki ,  Kazuhiko Itaya

    IPC分类号： H01L29/76

    CPC分类号： H03F3/195 ,  H01L23/585 ,  H01L23/66 ,  H01L29/0657 ,  H01L29/41758 ,  H01L29/4238 ,  H01L2223/6644 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device includes a first transistor unit including first field effect transistors with first gate electrodes electrically connected together, first sources electrically connected together, and first drains electrically connected together, the first gate electrodes being electrically connected to the first drains, a second transistor unit including second field effect transistors with second gate electrodes electrically connected together, second sources electrically connected together, and second drains electrically connected together, the second gate electrodes being electrically connected to the first gate electrodes, and dummy gate electrodes electrically isolated from the first gate electrodes and the second gate electrodes. The first gate electrodes, the second gate electrodes, and the dummy gate electrodes are arranged parallel to one another, and at least one dummy gate electrode is located between any one of the first gate electrodes and any one of the second gate electrodes.

    摘要翻译： 半导体器件包括第一晶体管单元，其包括第一场效应晶体管，第一栅电极电连接在一起，电连接在一起的第一源和电连接在一起的第一漏极，第一栅电极电连接到第一漏极，第二晶体管单元 包括第二场效应晶体管，其中第二栅电极电连接在一起，第二源电连接在一起，第二漏极电连接在一起，第二栅电极电连接到第一栅电极，以及虚栅极与第一栅电极电隔离 和第二栅电极。 第一栅电极，第二栅电极和伪栅极彼此平行布置，并且至少一个虚拟栅电极位于第一栅极电极和第二栅极电极中的任一个之间。

    SEMICONDUCTOR DEVICE
    10.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20090134430A1

    公开(公告)日：2009-05-28

    申请号：US12276787

    申请日：2008-11-24

    申请人： Kazuhide Abe ,  Tadahiro Sasaki ,  Kazuhiko Itaya

    发明人： Kazuhide Abe ,  Tadahiro Sasaki ,  Kazuhiko Itaya

    IPC分类号： H01L27/105

    CPC分类号： H01L27/088 ,  H01L23/4824 ,  H01L27/0207 ,  H01L27/105 ,  H01L29/1033 ,  H01L29/41758 ,  H01L29/7831 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： A semiconductor device includes a substrate including an element region having a polygonal shape defined by a plurality of edges, and an isolation region surrounding the element region, and a plurality of gate electrodes provided on the substrate, crossing the element region, arranged in parallel with each other, and electrically connected with each other, wherein at least one of the edges does not cross any of the gate electrodes, and is not parallel to the gate electrodes.

    摘要翻译： 半导体器件包括：衬底，其包括具有由多个边缘限定的多边形形状的元件区域和围绕该元件区域的隔离区域;以及多个栅电极，设置在该衬底上，与该元件区域交叉，与该 彼此电连接，其中至少一个边缘不与任何栅电极交叉，并且不平行于栅电极。