Magnetoresistive element and method of manufacturing the same
    111.
    发明申请
    Magnetoresistive element and method of manufacturing the same 审中-公开
    磁阻元件及其制造方法

    公开(公告)号:US20090190264A1

    公开(公告)日:2009-07-30

    申请号:US12320669

    申请日:2009-01-30

    IPC分类号: G11B5/48 B05D1/38 H01L29/82

    摘要: A magnetoresistive element includes a magnetoresistive film including a magnetization pinned layer, a magnetization free layer, an intermediate layer arranged between the magnetization pinned layer and the magnetization free layer, a cap layer arranged on the magnetization pinned layer or on the magnetization free layer, and a functional layer arranged in the magnetization pinned layer, in the magnetization free layer, in the interface between the magnetization pinned layer and the intermediate layer, in the interface between the intermediate layer and the magnetization free layer, or in the interface between the magnetization pinned layer or the magnetization free layer and the cap layer, and a pair of electrodes which pass a current perpendicularly to a plane of the magnetoresistive film, in which the functional layer is formed of a layer including nitrogen and a metal material containing 5 atomic % or more of Fe.

    摘要翻译: 磁阻元件包括磁阻膜,其包括磁化被钉扎层,磁化自由层,布置在磁化钉扎层和磁化自由层之间的中间层,布置在磁化钉扎层或磁化自由层上的盖层,以及 功能层,布置在磁化固定层中,在磁化自由层中,在磁化被钉扎层和中间层之间的界面中,在中间层和磁化自由层之间的界面中,或在磁化钉扎 层或磁化自由层和盖层,以及一对电极,其垂直于磁阻膜的平面通过电流,其中功能层由包含氮的层和含有5原子%的金属材料形成,或 更多的铁。

    Magneto-resistance effect element, magnetic head, magnetic recording/reproducing device and magnetic memory
    112.
    发明申请
    Magneto-resistance effect element, magnetic head, magnetic recording/reproducing device and magnetic memory 有权
    磁阻效应元件,磁头,磁记录/再现装置和磁存储器

    公开(公告)号:US20080062574A1

    公开(公告)日:2008-03-13

    申请号:US11898079

    申请日:2007-09-07

    IPC分类号: G11B5/127 G11B5/33

    摘要: A magneto-resistance effect element includes a first magnetic layer of which a magnetization direction is fixed; a second magnetic layer of which a magnetization direction is fixed; an intermediate layer which is provided between said first magnetic layer and said second magnetic layer; and a pair of electrodes for flowing a current perpendicular to a film surface of the resultant laminated body comprised of said first magnetic layer, said second magnetic layer and said intermediate layer. The intermediate layer includes insulating portions and metallic portions containing at least one selected from the group consisting of Fe, Co, Ni, Cr and the metallic portions are contacted with the first magnetic layer and the second magnetic layer.

    摘要翻译: 磁阻效应元件包括其磁化方向固定的第一磁性层; 磁化方向固定的第二磁性层; 设置在所述第一磁性层和所述第二磁性层之间的中间层; 以及一对电极,用于垂直于由所述第一磁性层,所述第二磁性层和所述中间层构成的所得叠层体的膜表面流动电流。 中间层包括绝缘部分和含有选自Fe,Co,Ni,Cr中的至少一种的金属部分,金属部分与第一磁性层和第二磁性层接触。

    Method for manufacturing a magneto-resistance effect element, and magneto-resistance effect element
    113.
    发明申请
    Method for manufacturing a magneto-resistance effect element, and magneto-resistance effect element 有权
    磁阻效应元件的制造方法以及磁阻效应元件

    公开(公告)号:US20080005891A1

    公开(公告)日:2008-01-10

    申请号:US11822435

    申请日:2007-07-05

    IPC分类号: G11B5/127 G11B5/33

    摘要: A method for manufacturing a magneto-resistance effect element includes: forming a fixed magnetization layer; forming a free magnetization layer; and forming a spacer layer with an insulating layer and a non-magnetic metallic path penetrating through the insulating layer, includes: forming a first non-magnetic metallic layer; forming, a metallic layer on a surface of the first non-magnetic metallic layer; irradiating, onto the metallic layer, ions or plasma including at least one of oxygen and nitrogen and at least one selected from the group consisting of Ar, Xe, He, Ne, kr so as to convert the metallic layer into the insulating layer and the non-magnetic metallic path containing the first non-magnetic metallic layer; forming a second non-magnetic metallic layer on the non-magnetic metallic path; and irradiating ions or plasma onto at least one of the fixed magnetization layer, the first metallic layer, the metallic layer, the insulating layer converted from the second metallic layer and the second non-magnetic metallic layer.

    摘要翻译: 制造磁阻效应元件的方法包括:形成固定磁化层; 形成自由磁化层; 以及形成具有穿过所述绝缘层的绝缘层和非磁性金属路径的间隔层,包括:形成第一非磁性金属层; 在所述第一非磁性金属层的表面上形成金属层; 在金属层上照射包括氧和氮中的至少一种的离子或等离子体,以及选自Ar,Xe,He,Ne,kr中的至少一种,以将金属层转化成绝缘层, 含有第一非磁性金属层的非磁性金属路径; 在非磁性金属路径上形成第二非磁性金属层; 并且将离子或等离子体照射到固定磁化层,第一金属层,金属层,从第二金属层转换的绝缘层和第二非磁性金属层中的至少一个上。

    Method for manufacturing pressure sensing device
    114.
    发明授权
    Method for manufacturing pressure sensing device 有权
    制造压力传感装置的方法

    公开(公告)号:US09046549B2

    公开(公告)日:2015-06-02

    申请号:US13710718

    申请日:2012-12-11

    摘要: According to one embodiment, a method for manufacturing a pressure sensing device includes preparing a sensor unit and a mounting substrate. The sensor unit includes: a membrane body; and an element unit provided on the membrane body. The element unit includes: a first electrode; a second electrode; and a first magnetic layer provided between the first electrode and the second electrode and having magnetization in a first direction. The mounting substrate includes: a base; a first electrode pad provided on the base; and a second electrode pad provided on the base and provided apart from the first electrode pad. The method further includes joining the first electrode pad to the first electrode while heated, and joining the second electrode pad to the second electrode while heated, with an external magnetic field along the first direction applied to the sensor unit.

    摘要翻译: 根据一个实施例,用于制造压力感测装置的方法包括制备传感器单元和安装基板。 传感器单元包括:膜体; 以及设置在膜体上的元件单元。 元件单元包括:第一电极; 第二电极; 以及设置在第一电极和第二电极之间并且在第一方向上具有磁化的第一磁性层。 安装基板包括:基座; 设置在基座上的第一电极焊盘; 以及设置在基座上并与第一电极焊盘分开设置的第二电极焊盘。 该方法还包括在加热时将第一电极焊盘接合到第一电极,并且在加热时将第二电极焊盘接合到第二电极,沿着施加到传感器单元的第一方向的外部磁场。

    Pressure sensor and microphone
    116.
    发明授权
    Pressure sensor and microphone 有权
    压力传感器和麦克风

    公开(公告)号:US08973446B2

    公开(公告)日:2015-03-10

    申请号:US13730016

    申请日:2012-12-28

    摘要: According to one embodiment, a pressure sensor includes a base, and a first sensor unit. The first sensor unit includes a first transducer thin film, a first strain sensing device and a second strain sensing device. The first strain sensing device includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and the second magnetic layers. The second strain sensing device is provided apart from the first strain sensing device on the first membrane surface and provided at a location different from a location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third and the fourth magnetic layers, the first and the second intermediate layers being nonmagnetic. The first and the second strain sensing devices, and the barycenter are in a straight line.

    摘要翻译: 根据一个实施例,压力传感器包括基座和第一传感器单元。 第一传感器单元包括第一换能器薄膜,第一应变感测装置和第二应变感测装置。 第一应变感测装置包括第一磁性层,第二磁性层和设置在第一和第二磁性层之间的第一中间层。 第二应变感测装置与第一膜表面上的第一应变感测装置分开设置,并且设置在与重心的位置不同的位置处,第二应变感测装置包括第三磁性层,第四磁性层和 第二中间层设置在第三和第四磁性层之间,第一和第二中间层是非磁性的。 第一和第二应变感测装置和重心处于直线。

    SPECIMEN IDENTIFICATION SYSTEM AND SPECIMEN IDENTIFICATION DEVICE
    118.
    发明申请
    SPECIMEN IDENTIFICATION SYSTEM AND SPECIMEN IDENTIFICATION DEVICE 有权
    标本识别系统和样本识别装置

    公开(公告)号:US20120241619A1

    公开(公告)日:2012-09-27

    申请号:US13430326

    申请日:2012-03-26

    IPC分类号: G01N21/55 G01N21/59

    CPC分类号: G01N21/3581 G01N21/3577

    摘要: In a specimen identification system, an oscillator directs a THz wave toward a channel that accommodates a specimen. A receiver detects the THz wave transmitted through the specimen. A first controller controls the oscillator to sweep the oscillation frequency of the THz wave within a frequency band. A receiver generates a receiving signal by sweeping the receiving frequency of the THz wave within the frequency band. A specimen identification unit specifies the specimen based on the waveform of the receiving signal within the frequency band.

    摘要翻译: 在样本识别系统中,振荡器将THz波导向容纳样本的通道。 接收器检测通过样品传输的太赫兹波。 第一控制器控制振荡器扫描频带内的太赫兹波的振荡频率。 接收机通过扫描频带内的THz波的接收频率来产生接收信号。 样本识别单元基于频带内的接收信号的波形来指定样本。

    MAGNETIC RECORDING HEAD
    119.
    发明申请
    MAGNETIC RECORDING HEAD 有权
    磁记录头

    公开(公告)号:US20120224279A1

    公开(公告)日:2012-09-06

    申请号:US13472314

    申请日:2012-05-15

    IPC分类号: G11B5/127

    摘要: An example magnetic recording head includes a main magnetic pole containing a ferromagnetic layer and a main magnetic pole-magnetization fixing portion containing an anti-ferromagnetic layer in contact with at least one side surface of the main magnetic pole. A heater for the main magnetic pole is configured so as to include an oxide layer with a metal path therein embedded in or provided in the vicinity of the main magnetic pole-magnetization fixing portion and a pair of electrodes, provided in the vicinity of the oxide layer, for flowing a current parallel to a surface of a recording medium through the metal path. A magnetic field generator generates a magnetic field so as to direct a magnetization of the main magnetic pole in one direction.

    摘要翻译: 示例性的磁记录头包括含有铁磁层的主磁极和包含与主磁极的至少一个侧表面接触的反铁磁层的主磁极固定部分。 用于主磁极的加热器被构造成包括其中嵌入或设置在主磁极固定部分附近的金属路径的氧化物层和设置在氧化物附近的一对电极 层,用于通过金属路径流动平行于记录介质的表面的电流。 磁场发生器产生磁场,以便在一个方向上引导主磁极的磁化。

    METHOD OF MANUFACTURING A MAGNETO-RESISTANCE EFFECT ELEMENT
    120.
    发明申请
    METHOD OF MANUFACTURING A MAGNETO-RESISTANCE EFFECT ELEMENT 失效
    制造磁阻效应元件的方法

    公开(公告)号:US20120192998A1

    公开(公告)日:2012-08-02

    申请号:US13419198

    申请日:2012-03-13

    IPC分类号: C23C8/36 C23C8/80 C23C8/00

    CPC分类号: B25G1/102

    摘要: An example method for manufacturing a magneto-resistance effect element having a magnetic layer, a free magnetization layer, and a spacer layer includes forming a first metallic layer and forming, on the first metallic layer, a second metallic layer. A first conversion treatment is performed to convert the second metallic layer into a first insulating layer and to form a first metallic portion penetrating through the first insulating layer. A third metallic layer is formed on the first insulating layer and the first metallic portion. A second conversion treatment is performed to convert the third metallic layer into a second insulating layer and to form a second metallic portion penetrating through the second insulating layer.

    摘要翻译: 用于制造具有磁性层,自由磁化层和间隔层的磁阻效应元件的示例性方法包括形成第一金属层,并在第一金属层上形成第二金属层。 执行第一转换处理以将第二金属层转换成第一绝缘层并形成贯穿第一绝缘层的第一金属部分。 在第一绝缘层和第一金属部分上形成第三金属层。 执行第二转换处理以将第三金属层转换成第二绝缘层并形成贯穿第二绝缘层的第二金属部分。