公开(公告)号：US07673220B2

公开(公告)日：2010-03-02

申请号：US11363030

申请日：2006-02-28

申请人： Moo-Sung Kim ,  Seung-Jae Lee

发明人： Moo-Sung Kim ,  Seung-Jae Lee

IPC分类号： G11C29/00

CPC分类号： G11C11/5628 ,  G11C16/0483 ,  G11C16/10 ,  G11C2211/5622 ,  G11C2216/14

摘要： A flash memory device is disclosed that comprises memory cells, a sense node connected to a selected bit line, a sense circuit configured to selectively provide a first voltage to a common node in accordance with a voltage level of the sense node, a first register connected to the sense node and the common node and configured to store data in accordance with a voltage level of the common node, a second register configured to store data in accordance with the voltage level of the sense node, a switch configured to provide a second voltage to the second register, and a discharge circuit configured to selectively discharge the sense node in accordance with the data stored in the second register.

摘要翻译： 公开了一种闪速存储器件，其包括存储器单元，连接到所选位线的感测节点，感测电路，被配置为根据感测节点的电压电平有选择地向公共节点提供第一电压;第一寄存器连接 到所述感测节点和所述公共节点，并且被配置为根据所述公共节点的电压电平来存储数据;第二寄存器，被配置为根据所述感测节点的电压电平来存储数据;被配置为提供第二电压 以及放电电路，其被配置为根据存储在第二寄存器中的数据选择性地放电感测节点。

公开(公告)号：US07663914B2

公开(公告)日：2010-02-16

申请号：US12005362

申请日：2007-12-27

申请人： Seung-Jae Lee

发明人： Seung-Jae Lee

IPC分类号： G11C16/04

CPC分类号： G11C16/10 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/3454 ,  G11C16/3459 ,  G11C2211/5621

摘要： A method of programming a multi bit flash memory device may perform a kth preliminary verify read operation before performing a kth program operation according to a kth page of program data, where n and k integers, n≧2, and 1≦k≦n. That is, where a (k−1)th program operation produces one or more expanded threshold voltage distribution regions due to the presence of fast cells, the kth preliminary verify read operation may detect fast cells that have already reached their target threshold states without having had to undergo the kth program operation. The kth preliminary verify read operation also may set the detected fast cells to have program-inhibit status so as to reduce or prevent undesired further programming of the detected fast cells that would otherwise occur during the kth program operation.

摘要翻译： 编程多位闪速存储器件的方法可以在根据程序数据的第k页执行第k个编程操作之前执行第k个初步验证读取操作，其中n和k个整数n> = 2和1 <= k < = n。 也就是说，由于存在快速单元，第（k-1）程序操作产生一个或多个扩展的阈值电压分布区域，所以第k个初步验证读取操作可以检测已经达到其目标阈值状态的快速单元，而没有 不得不进行第k个程序操作。 第k个初步验证读取操作还可以将检测到的快速单元设置为具有编程禁止状态，以便减少或防止在第k个程序操作期间将发生的检测到的快速单元的不期望​​的进一步编程。

公开(公告)号：US20090315054A1

公开(公告)日：2009-12-24

申请号：US12457177

申请日：2009-06-03

申请人： Yu-Sik Kim ,  Seung-Jae Lee

发明人： Yu-Sik Kim ,  Seung-Jae Lee

IPC分类号： H01L33/00 ,  H01L21/28

CPC分类号： H01L33/20 ,  H01L25/0753 ,  H01L33/145 ,  H01L33/405 ,  H01L33/44 ,  H01L33/507 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00011 ,  H01L2924/10158 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01039

摘要： An emitting device including a first electrode, a second electrode spaced apart from the first electrode, an emitting pattern including a portion between the first electrode and the second electrode, and a block pattern including a portion between the emitting pattern and the first electrode and/or on a same level as the first electrode.

摘要翻译： 一种发光装置，包括第一电极，与第一电极间隔开的第二电极，包括第一电极和第二电极之间的部分的发射图案，以及包括在发光图案与第一电极之间的部分和/ 或在与第一电极相同的水平上。

公开(公告)号：US20090103360A1

公开(公告)日：2009-04-23

申请号：US12255211

申请日：2008-10-21

申请人： Dong Ku Kang ,  Dong-Hyuk Chae ,  Seung-Jae Lee

发明人： Dong Ku Kang ,  Dong-Hyuk Chae ,  Seung-Jae Lee

IPC分类号： G11C16/06 ,  G11C16/00

CPC分类号： G11C16/10 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/3418 ,  G11C2211/5646

摘要： The flash memory device of the present invention is configured to program a plurality of bits per unit cell, wherein a program condition of a selected bit is set according to whether a program for the most previous bit to the selected bit for programming is skipped or not skipped. As a result, an accurate programming and reading operation is possible even in case a program for a middle bit is skipped.

摘要翻译： 本发明的闪速存储器件被配置为对每个单位单元的多个位进行编程，其中根据用于编程的选择位的最前一位的程序是否被跳过来设置所选位的程序状态 跳过 因此，即使在中间位的程序被跳过的情况下也可以进行准确的编程和读取操作。

公开(公告)号：US20080168216A1

公开(公告)日：2008-07-10

申请号：US12007216

申请日：2008-01-08

申请人： Seung-Jae Lee

发明人： Seung-Jae Lee

IPC分类号： G06F12/02

CPC分类号： G06F12/0246

摘要： A memory system includes a multi-bit flash memory device and a flash controller configured to control the multi-bit flash memory device. The flash controller is configured to output a series of commands, pointers, and addresses to the multi-bit flash memory device for read/program operations.

摘要翻译： 存储器系统包括多位闪存器件和配置成控制多位闪存器件的闪存控制器。 闪存控制器被配置为向多位闪存设备输出一系列命令，指针和地址以进行读/写操作。

公开(公告)号：US20080165579A1

公开(公告)日：2008-07-10

申请号：US12007217

申请日：2008-01-08

申请人： Seung-Jae Lee

发明人： Seung-Jae Lee

IPC分类号： G11C16/34

CPC分类号： G11C16/10 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/3454 ,  G11C2211/5621

摘要： A method of programming a plurality of memory cells of a flash memory device by selectively changing a threshold voltage distribution thereof from a first distribution to a second distribution, the method includes selecting at least one of the memory cells to be programmed, and programming the at least one selected memory cell to a voltage higher than a verify voltage, wherein the verify voltage is one of threshold voltages included in the first distribution or is higher than the threshold voltages included in the first distribution.

摘要翻译： 一种通过选择性地将其阈值电压分布从第一分布改变到第二分布来对闪速存储器件的多个存储器单元进行编程的方法，所述方法包括选择要被编程的存储器单元中的至少一个， 至少一个所选择的存储单元至高于验证电压的电压，其中所述验证电压是包括在所述第一分布中的阈值电压之一或高于所述第一分布中包括的阈值电压。

公开(公告)号：US20080158955A1

公开(公告)日：2008-07-03

申请号：US12005362

申请日：2007-12-27

申请人： Seung-Jae Lee

发明人： Seung-Jae Lee

IPC分类号： G11C16/10

CPC分类号： G11C16/10 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/3454 ,  G11C16/3459 ,  G11C2211/5621

摘要： A method of programming a multi bit flash memory device may perform a kth preliminary verify read operation before performing a kth program operation according to a kth page of program data, where n and k integers, n≧2, and 1≦k≦n. That is, where a (k−1)th program operation produces one or more expanded threshold voltage distribution regions due to the presence of fast cells, the kth preliminary verify read operation may detect fast cells that have already reached their target threshold states without having had to undergo the kth program operation. The kth preliminary verify read operation also may set the detected fast cells to have program-inhibit status so as to reduce or prevent undesired further programming of the detected fast cells that would otherwise occur during the kth program operation.

摘要翻译： 一种编程多位闪速存储器件的方法可以在执行根据第页页的执行第程序操作之前执行初步验证读操作 的程序数据，其中n和k个整数，n> = 2和1 <= k <= n。 也就是说，由于存在快速单元，由于（k-1）^{程序操作产生一个或多个扩展的阈值电压分布区域，所以第k次初步验证读取 操作可以检测已经达到其目标阈值状态的快速单元，而不必经历第程序操作。 初步验证读取操作还可以将检测到的快速单元设置为具有禁止编程状态，以便减少或防止在k th 程序操作。}

公开(公告)号：US20080032179A1

公开(公告)日：2008-02-07

申请号：US11627644

申请日：2007-01-26

申请人： Tae-won Song ,  Seung-Jae Lee ,  Jie Peng ,  Jae-young Shin

发明人： Tae-won Song ,  Seung-Jae Lee ,  Jie Peng ,  Jae-young Shin

IPC分类号： H01M2/08 ,  H01M8/04

CPC分类号： H01M8/0271 ,  H01M8/0247

摘要： A sealing structure for a cooling plate of a fuel cell. The sealing structure includes grooves formed on corresponding regions of a separator of a unit cell and a cooling plate, a first sealing member formed between the grooves, second sealing members formed on each bottom of the grooves, and a third sealing member formed about the first sealing member.

摘要翻译： 一种用于燃料电池的冷却板的密封结构。 密封结构包括形成在单元电池的隔板的相应区域上的槽和冷却板，形成在槽之间的第一密封构件，形成在槽的每个底部上的第二密封构件，以及围绕第一 密封件。

公开(公告)号：US07261289B2

公开(公告)日：2007-08-28

申请号：US10970652

申请日：2004-10-22

申请人： Seung-Jae Lee ,  Sang-Jin Bae

发明人： Seung-Jae Lee ,  Sang-Jin Bae

IPC分类号： B65H5/00

CPC分类号： G03G15/602 ,  G03G2215/00189

摘要： An automatic document feeder for an image forming apparatus comprising a separation roller for separately carrying a plurality of paper sheets picked by a pickup roller, a feeding roller for carrying the paper sheets, a discharge roller for discharging the scanned paper sheets, and a transmission unit for transmitting a driving force from a driving motor. The transmission unit comprises an internal roller installed on the same axis as the feeding roller, the internal roller having an internal gear, a swing arm rotatably attached to a bracket, the bracket being inserted into the internal roller, and a swing gear rotatably installed on one side of the swing arm, the swing gear being engaged with the internal gear for rotating the internal roller.

摘要翻译： 一种用于图像形成装置的自动送稿器，包括分离辊，用于分别承载由拾取辊拾取的多个纸张，用于承载纸张的进给辊，用于排出扫描纸张的排出辊以及传送单元 用于从驱动电机传递驱动力。 传动单元包括安装在与进给辊相同的轴线上的内部辊，内部辊具有内部齿轮，可旋转地附接到支架的摆臂，插入内部辊的支架和可旋转地安装在 摆臂的一侧，摆动齿轮与内齿轮啮合，用于旋转内辊。

公开(公告)号：US07227782B2

公开(公告)日：2007-06-05

申请号：US11285273

申请日：2005-11-22

申请人： Seung-Jae Lee ,  Jung-Hoon Park

发明人： Seung-Jae Lee ,  Jung-Hoon Park

IPC分类号： G11C11/34

CPC分类号： G11C16/10 ,  G11C29/846

摘要： A NAND flash memory device which includes a first page buffer circuit reading main data bits from the main field during a read operation, a second page buffer circuit reading redundant data bits from the redundancy field during the read operation, a first column gate circuit configured to select a part of the read main data bits and a part of the read redundant data bits in response to first column selection signals at the same time, and a second column gate circuit configured to select a part of the selected main data bits in response to second column selection signals.

摘要翻译： 一种NAND闪速存储器件，包括在读取操作期间从主场读取主要数据位的第一页缓冲器电路，在读取操作期间从冗余场读取冗余数据位的第二页缓冲器电路，配置为 响应于第一列选择信号同时选择读取的主数据位的一部分和读取的冗余数据位的一部分，以及第二列门电路，被配置为响应于所选择的主数据位选择一部分 第二列选择信号。