公开(公告)号：US07673220B2

公开(公告)日：2010-03-02

申请号：US11363030

申请日：2006-02-28

申请人： Moo-Sung Kim ,  Seung-Jae Lee

发明人： Moo-Sung Kim ,  Seung-Jae Lee

IPC分类号： G11C29/00

CPC分类号： G11C11/5628 ,  G11C16/0483 ,  G11C16/10 ,  G11C2211/5622 ,  G11C2216/14

摘要： A flash memory device is disclosed that comprises memory cells, a sense node connected to a selected bit line, a sense circuit configured to selectively provide a first voltage to a common node in accordance with a voltage level of the sense node, a first register connected to the sense node and the common node and configured to store data in accordance with a voltage level of the common node, a second register configured to store data in accordance with the voltage level of the sense node, a switch configured to provide a second voltage to the second register, and a discharge circuit configured to selectively discharge the sense node in accordance with the data stored in the second register.

摘要翻译： 公开了一种闪速存储器件，其包括存储器单元，连接到所选位线的感测节点，感测电路，被配置为根据感测节点的电压电平有选择地向公共节点提供第一电压;第一寄存器连接 到所述感测节点和所述公共节点，并且被配置为根据所述公共节点的电压电平来存储数据;第二寄存器，被配置为根据所述感测节点的电压电平来存储数据;被配置为提供第二电压 以及放电电路，其被配置为根据存储在第二寄存器中的数据选择性地放电感测节点。

公开(公告)号：US20050006692A1

公开(公告)日：2005-01-13

申请号：US10840580

申请日：2004-05-07

申请人： Moo-Sung Kim ,  Yeong-Taek Lee ,  Seung-Jae Lee

发明人： Moo-Sung Kim ,  Yeong-Taek Lee ,  Seung-Jae Lee

IPC分类号： G11C16/06 ,  G11C8/00 ,  G11C11/56 ,  G11C16/00 ,  G11C16/02 ,  G11C16/04 ,  G11C16/10 ,  G11C16/12 ,  G11C16/24 ,  H01L27/115

CPC分类号： G11C16/10 ,  G11C11/5628 ,  G11C16/0483 ,  H01L27/115

摘要： A flash memory device may include a memory cell array having a plurality of word lines, bit lines, and memory cells. Each memory cell may be arranged at an intersection of a corresponding word line and a corresponding bit line. The device may include a bit line voltage setting circuit for setting a voltage on a bit line of a given memory cell to be programmed to a variable bit line voltage or to a ground voltage. A variable bit line voltage generating circuit may be provided in the flash memory device for generating the variable bit line voltage. To facilitating programming of the device, a bit line voltage of a given memory cell to be programmed may be set based on a supply voltage of the device, so as to maintain a voltage difference based on the set bit line voltage above a given threshold voltage.

摘要翻译： 闪存器件可以包括具有多个字线，位线和存储器单元的存储单元阵列。 每个存储单元可以被布置在对应的字线和对应的位线的交叉点处。 该设备可以包括位线电压设置电路，用于将要编程的给定存储器单元的位线上的电压设置为可变位线电压或接地电压。 可变位线电压产生电路可以设置在闪存器件中，用于产生可变位线电压。 为了便于设备的编程，可以基于设备的电源电压来设置要编程的给定存储器单元的位线电压，以便基于设定的位线电压维持高于给定阈值电压的电压差 。

公开(公告)号：US07566927B2

公开(公告)日：2009-07-28

申请号：US10840580

申请日：2004-05-07

申请人： Moo-Sung Kim ,  Yeong-Taek Lee ,  Seung-Jae Lee

发明人： Moo-Sung Kim ,  Yeong-Taek Lee ,  Seung-Jae Lee

IPC分类号： H01L29/788

CPC分类号： G11C16/10 ,  G11C11/5628 ,  G11C16/0483 ,  H01L27/115

摘要： A flash memory device may include a memory cell array having a plurality of word lines, bit lines, and memory cells. Each memory cell may be arranged at an intersection of a corresponding word line and a corresponding bit line. The device may include a bit line voltage setting circuit for setting a voltage on a bit line of a given memory cell to be programmed to a variable bit line voltage or to a ground voltage. A variable bit line voltage generating circuit may be provided in the flash memory device for generating the variable bit line voltage. To facilitating programming of the device, a bit line voltage of a given memory cell to be programmed may be set based on a supply voltage of the device, so as to maintain a voltage difference based on the set bit line voltage above a given threshold voltage.

摘要翻译： 闪存器件可以包括具有多个字线，位线和存储器单元的存储单元阵列。 每个存储单元可以被布置在对应的字线和对应的位线的交叉点处。 该设备可以包括位线电压设置电路，用于将要编程的给定存储器单元的位线上的电压设置为可变位线电压或接地电压。 可变位线电压产生电路可以设置在闪存器件中，用于产生可变位线电压。 为了便于设备的编程，可以基于设备的电源电压来设置要编程的给定存储器单元的位线电压，以便基于设定的位线电压维持高于给定阈值电压的电压差 。

公开(公告)号：US20070028155A1

公开(公告)日：2007-02-01

申请号：US11363030

申请日：2006-02-28

申请人： Moo-Sung Kim ,  Seung-Jae Lee

发明人： Moo-Sung Kim ,  Seung-Jae Lee

IPC分类号： H03M13/00

CPC分类号： G11C11/5628 ,  G11C16/0483 ,  G11C16/10 ,  G11C2211/5622 ,  G11C2216/14

摘要： A flash memory device is disclosed that comprises memory cells, a sense node connected to a selected bit line, a sense circuit configured to selectively provide a first voltage to a common node in accordance with a voltage level of the sense node, a first register connected to the sense node and the common node and configured to store data in accordance with a voltage level of the common node,a second register configured to store data in accordance with the voltage level of the sense node, a switch configured to provide a second voltage to the second register, and a discharge circuit configured to selectively discharge the sense node in accordance with the data stored in the second register.

摘要翻译： 公开了一种闪速存储器件，其包括存储器单元，连接到所选位线的感测节点，感测电路，被配置为根据感测节点的电压电平有选择地向公共节点提供第一电压;第一寄存器连接 到所述感测节点和所述公共节点，并且被配置为根据所述公共节点的电压电平来存储数据;第二寄存器，被配置为根据所述感测节点的电压电平来存储数据;被配置为提供第二电压 以及放电电路，其被配置为根据存储在第二寄存器中的数据选择性地放电感测节点。

公开(公告)号：US08835020B2

公开(公告)日：2014-09-16

申请号：US12591796

申请日：2009-12-01

申请人： Seung-Jae Lee ,  In-Bum Song ,  Jung-Keun Kim ,  Do-Han Kim ,  Chun-Gun Park ,  Hyoung-Yun Oh ,  Jong-Kwan Bin ,  Kyung-Hoon Lee ,  Hyun-Cheol Jeong ,  Dong-Hee Yoo ,  Nam-Sung Cho ,  Jong-Hyun Park ,  In-Sun Yoo ,  Tae-Han Park ,  Soon-Wook Cha

发明人： Seung-Jae Lee ,  In-Bum Song ,  Jung-Keun Kim ,  Do-Han Kim ,  Chun-Gun Park ,  Hyoung-Yun Oh ,  Jong-Kwan Bin ,  Kyung-Hoon Lee ,  Hyun-Cheol Jeong ,  Dong-Hee Yoo ,  Nam-Sung Cho ,  Jong-Hyun Park ,  In-Sun Yoo ,  Tae-Han Park ,  Soon-Wook Cha

IPC分类号： H01L51/54 ,  C09K11/06 ,  H01L51/00 ,  H05B33/14 ,  C07C211/61 ,  C07C255/58 ,  H01L51/50

CPC分类号： C09K11/06 ,  C07C211/61 ,  C07C255/58 ,  C07C2603/50 ,  C09K2211/1011 ,  C09K2211/1014 ,  H01L51/0054 ,  H01L51/0058 ,  H01L51/006 ,  H01L51/5012 ,  H05B33/14 ,  Y10S428/917

摘要： A blue fluorescent compound includes a host material being capable of transporting an electron or a hole; and a dopant material represented by following Formula 1: wherein at least two of the R1, the R2, the R3, and the R4 are selected from substituted or non-substituted aromatic group or substituted or non-substituted heterocyclic group, and the R5 is selected from substituted or non-substituted aromatic group or substituted or non-substituted heterocyclic group.

摘要翻译： 蓝色荧光化合物包括能够输送电子或孔的主体材料; 和由下式1表示的掺杂剂材料：其中R1，R2，R3和R4中的至少两个选自取代或未取代的芳族基团或取代或未取代的杂环基，R5是 选自取代或未取代的芳族基团或取代或未取代的杂环基团。

公开(公告)号：US08683610B2

公开(公告)日：2014-03-25

申请号：US13566700

申请日：2012-08-03

申请人： Seung-Jae Lee ,  Te-Hyun Kim

发明人： Seung-Jae Lee ,  Te-Hyun Kim

IPC分类号： G06F7/04

CPC分类号： H04L9/3273 ,  G06F21/10 ,  H04L9/3247 ,  H04L63/0428 ,  H04L63/10 ,  H04L63/12 ,  H04L2209/603 ,  H04L2463/062 ,  H04L2463/101

摘要： A terminal for managing digital rights of a memory card inserted into the terminal and has a processor and a memory, the digital rights allowing the terminal to access digital contents. The terminal includes a processor configured to manage a digital rights and to exchange information with the memory card, the information including a terminal ID and a memory card ID; perform a mutual authentication procedure with the memory card; receive, from a contents provider, a trigger message which indicates to the terminal that a digital rights for the memory card is prepared in the contents provider; if a parameter included in the trigger message does not indicate the memory card, perform a procedure for obtaining a digital rights for the terminal; and if a parameter included in the trigger message indicates the memory card, perform a procedure for requesting a digital rights for the memory card.

摘要翻译： 一种用于管理插入终端中的存储卡的数字版权的终端，具有处理器和存储器，该数字版权允许终端访问数字内容。 终端包括处理器，被配置为管理数字版权并与存储卡交换信息，该信息包括终端ID和存储卡ID; 与存储卡执行相互认证程序; 从内容提供者接收触发消息，向终端指示在内容提供商中准备存储卡的数字版权; 如果包括在触发消息中的参数不指示存储卡，则执行用于获得终端的数字版权的过程; 并且如果包括在触发消息中的参数指示存储卡，则执行请求存储卡的数字版权的过程。

公开(公告)号：US08617991B2

公开(公告)日：2013-12-31

申请号：US13526960

申请日：2012-06-19

申请人： Jung-Chan Lee ,  Yoo-Jung Lee ,  Ki-Hyung Ko ,  Dae-Young Kwak ,  Seung-Jae Lee ,  Jae-Sung Hur ,  Sang-Bom Kang ,  Cheol Kim ,  Bo-Un Yoon

发明人： Jung-Chan Lee ,  Yoo-Jung Lee ,  Ki-Hyung Ko ,  Dae-Young Kwak ,  Seung-Jae Lee ,  Jae-Sung Hur ,  Sang-Bom Kang ,  Cheol Kim ,  Bo-Un Yoon

IPC分类号： H01L21/44

CPC分类号： H01L29/4983 ,  H01L21/76895 ,  H01L21/82345 ,  H01L29/49 ,  H01L29/66545 ,  H01L29/78

摘要： A method of manufacturing a semiconductor device includes forming an interlayer dielectric film that has first and second trenches on first and second regions of a substrate, respectively, forming a first metal layer along a sidewall and a bottom surface of the first trench and along a top surface of the interlayer dielectric film in the first region, forming a second metal layer along a sidewall and a bottom surface of the second trench and along a top surface of the interlayer dielectric film in the second region, forming a first sacrificial layer pattern on the first metal layer such that the first sacrificial layer fills a portion of the first trench, forming a first electrode layer by etching the first metal layer and the second metal layer using the first sacrificial layer pattern, and removing the first sacrificial layer pattern.

摘要翻译： 一种制造半导体器件的方法包括：在衬底的第一和第二区域上分别形成具有第一和第二沟槽的层间电介质膜，沿着第一沟槽的侧壁和底表面沿顶部形成第一金属层 在所述第一区域中的所述层间电介质膜的表面，沿着所述第二沟槽的侧壁和底表面沿着所述第二区域中的所述层间电介质膜的顶表面形成第二金属层，在所述第二区域中形成第一牺牲层图案 第一金属层，使得第一牺牲层填充第一沟槽的一部分，通过使用第一牺牲层图案蚀刻第一金属层和第二金属层形成第一电极层，以及去除第一牺牲层图案。

公开(公告)号：US08486160B2

公开(公告)日：2013-07-16

申请号：US12960415

申请日：2010-12-03

申请人： Po-Jung Hwang ,  Seung-Jae Lee ,  Yoo-Myung Kang ,  Jae-Do Ahn ,  Jae-Min Yang ,  Jeong-Heon Lee ,  Byeong-Yeol Song ,  Jae-Hyun Hwang ,  Sung-Soo Kim ,  Sae-Weon Roh

发明人： Po-Jung Hwang ,  Seung-Jae Lee ,  Yoo-Myung Kang ,  Jae-Do Ahn ,  Jae-Min Yang ,  Jeong-Heon Lee ,  Byeong-Yeol Song ,  Jae-Hyun Hwang ,  Sung-Soo Kim ,  Sae-Weon Roh

IPC分类号： H01M2/14 ,  H01M2/02 ,  H01M10/02 ,  H01M10/04

CPC分类号： H01M2/1673 ,  H01M2/021 ,  H01M2/0212 ,  H01M2/18 ,  H01M10/0413 ,  H01M10/0436 ,  H01M10/052 ,  H01M10/0585 ,  Y02T10/7011 ,  Y10T29/49114

摘要： A rechargeable battery comprises: an electrode assembly comprising a plurality of positive electrode plates, a plurality of negative electrode plates, and a plurality of separators; and a case enclosing the electrode assembly; wherein each separator in the plurality of separators comprises a central portion facing at least one of the positive and negative electrode plates, and an extended portion that extends past the positive and negative electrode plates, and wherein each of the extended portion comprises an adhered portion that is adhered to adjacent extended portions.

摘要翻译： 可再充电电池包括：电极组件，包括多个正极板，多个负极板和多个隔板; 以及包围所述电极组件的壳体; 其中所述多个分离器中的每个分离器包括面向所述正极板和所述正极板中的至少一个的中心部分和延伸穿过所述正极板和所述负极板的延伸部分，并且其中每个所述延伸部分包括粘附部分， 粘附到相邻的延伸部分。

公开(公告)号：US20120193672A1

公开(公告)日：2012-08-02

申请号：US13445455

申请日：2012-04-12

申请人： Yu-Sik Kim ,  Seong-Deok Hwang ,  Seung-Jae Lee ,  Sun-Pil Youn

发明人： Yu-Sik Kim ,  Seong-Deok Hwang ,  Seung-Jae Lee ,  Sun-Pil Youn

IPC分类号： H01L33/36

CPC分类号： H01L33/58 ,  H01L24/32 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/22 ,  H01L33/50 ,  H01L2224/06102 ,  H01L2224/13 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2924/00014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00011 ,  H01L2224/45099

摘要： Provided are a method of fabricating a light-emitting apparatus with improved light extraction efficiency and a light-emitting apparatus fabricated using the method. The method includes: preparing a monocrystalline substrate; forming an intermediate structure on the substrate, the intermediate structure comprising a light-emitting structure which comprises a first conductive pattern of a first conductivity type, a light-emitting pattern, and a second conductive pattern of a second conductivity type stacked sequentially, a first electrode which is electrically connected to the first conductive pattern, and a second electrode which is electrically connected to the second conductive pattern; forming a polycrystalline region, which extends in a horizontal direction, by irradiating a laser beam to the substrate in the horizontal direction such that the laser beam is focused on a beam-focusing point within the substrate; and cutting the substrate in the horizontal direction along the polycrystalline region.

摘要翻译： 提供了一种制造具有改进的光提取效率的发光装置的方法和使用该方法制造的发光装置。 该方法包括：制备单晶基板; 在所述基板上形成中间结构，所述中间结构包括发光结构，所述发光结构包括依次堆叠的第一导电类型的第一导电图案，发光图案和第二导电类型的第二导电图案，第一导电图案 电连接到第一导电图案的电极和与第二导电图案电连接的第二电极; 通过在水平方向上将激光束照射到基板上，使得激光束聚焦在基板内的光束聚焦点上，形成沿水平方向延伸的多晶区域; 以及沿着多晶区沿水平方向切割基板。

公开(公告)号：US07930250B2

公开(公告)日：2011-04-19

申请号：US11760571

申请日：2007-06-08

申请人： Seung-Jae Lee ,  Te-Hyun Kim ,  Youn-Sung Chu ,  Kiran Kumar Keshavamurthy

发明人： Seung-Jae Lee ,  Te-Hyun Kim ,  Youn-Sung Chu ,  Kiran Kumar Keshavamurthy

IPC分类号： G06F21/00

CPC分类号： G06F21/10

摘要： A method for managing a specific domain (or user domain), for example leaving the domain by a specific device after fully returning a Rights Object (RO) taken by the specific device, instead of deactivating the RO, when leaving the specific domain, the method in which the device desiring to leave the specific domain moves its RO to another device desiring to join the specific domain and thereafter leaves the specific domain under the control of a Domain Authority/Domain Enforcement Agent (DA/DEA).

摘要翻译： 一种用于管理特定域（或用户域）的方法，例如在完全返回特定设备所采用的权限对象（RO）之后由特定设备离开域，而不是在离开特定域时停用RO 方法，其中期望离开特定域的设备将其RO移动到希望加入特定域的另一个设备，然后将特定域保留在域授权/域强制代理（DA / DEA）的控制之下。