摘要:
A red phosphorescent compound, includes a host material being capable of transporting an electron or a hole; and a dopant material represented by the following formula 1: wherein each of R1 to R4 is selected from the group consisting of hydrogen atom (H), C1 to C6 alkyl and C1 to C6 alkoxy, and at least one of R1 to R4 is C1 to C6 alkyl, and wherein each of R5 to R7 is selected from the group consisting of hydrogen, C1 to C6 alkyl and pyrrole, and at least one of R5 to R7 is pyrrole, and wherein each of X and Y is selected from the group consisting of H, non-substituted C1 to C6 alkyl and C1 to C6 alkyl substituted by fluorine.
摘要:
Provided is a light emitting element, a light emitting device including the same, and fabrication methods of the light emitting element and light emitting device. The light emitting device comprises a substrate, a light emitting structure including a first conductive layer of a first conductivity type, a light emitting layer, and a second conductive layer of a second conductivity type which are sequentially stacked, a first electrode which is electrically connected with the first conductive layer; and a second electrode which is electrically connected with the second conductive layer and separated apart from the first electrode, wherein at least a part of the second electrode is connected from a top of the light emitting structure, through a sidewall of the light emitting structure, and to a sidewall of the substrate.
摘要:
A method of programming a multi bit flash memory device may perform a kth preliminary verify read operation before performing a kth program operation according to a kth page of program data, where n and k integers, n≧2, and 1≦k≦n. That is, where a (k−1)th program operation produces one or more expanded threshold voltage distribution regions due to the presence of fast cells, the kth preliminary verify read operation may detect fast cells that have already reached their target threshold states without having had to undergo the kth program operation. The kth preliminary verify read operation also may set the detected fast cells to have program-inhibit status so as to reduce or prevent undesired further programming of the detected fast cells that would otherwise occur during the kth program operation.
摘要:
An emitting device including a first electrode, a second electrode spaced apart from the first electrode, an emitting pattern including a portion between the first electrode and the second electrode, and a block pattern including a portion between the emitting pattern and the first electrode and/or on a same level as the first electrode.
摘要:
The flash memory device of the present invention is configured to program a plurality of bits per unit cell, wherein a program condition of a selected bit is set according to whether a program for the most previous bit to the selected bit for programming is skipped or not skipped. As a result, an accurate programming and reading operation is possible even in case a program for a middle bit is skipped.
摘要:
A memory system includes a multi-bit flash memory device and a flash controller configured to control the multi-bit flash memory device. The flash controller is configured to output a series of commands, pointers, and addresses to the multi-bit flash memory device for read/program operations.
摘要:
A method of programming a plurality of memory cells of a flash memory device by selectively changing a threshold voltage distribution thereof from a first distribution to a second distribution, the method includes selecting at least one of the memory cells to be programmed, and programming the at least one selected memory cell to a voltage higher than a verify voltage, wherein the verify voltage is one of threshold voltages included in the first distribution or is higher than the threshold voltages included in the first distribution.
摘要:
A method of programming a multi bit flash memory device may perform a kth preliminary verify read operation before performing a kth program operation according to a kth page of program data, where n and k integers, n≧2, and 1≦k≦n. That is, where a (k−1)th program operation produces one or more expanded threshold voltage distribution regions due to the presence of fast cells, the kth preliminary verify read operation may detect fast cells that have already reached their target threshold states without having had to undergo the kth program operation. The kth preliminary verify read operation also may set the detected fast cells to have program-inhibit status so as to reduce or prevent undesired further programming of the detected fast cells that would otherwise occur during the kth program operation.
摘要:
A sealing structure for a cooling plate of a fuel cell. The sealing structure includes grooves formed on corresponding regions of a separator of a unit cell and a cooling plate, a first sealing member formed between the grooves, second sealing members formed on each bottom of the grooves, and a third sealing member formed about the first sealing member.
摘要:
An automatic document feeder for an image forming apparatus comprising a separation roller for separately carrying a plurality of paper sheets picked by a pickup roller, a feeding roller for carrying the paper sheets, a discharge roller for discharging the scanned paper sheets, and a transmission unit for transmitting a driving force from a driving motor. The transmission unit comprises an internal roller installed on the same axis as the feeding roller, the internal roller having an internal gear, a swing arm rotatably attached to a bracket, the bracket being inserted into the internal roller, and a swing gear rotatably installed on one side of the swing arm, the swing gear being engaged with the internal gear for rotating the internal roller.