公开(公告)号：US20170207247A1

公开(公告)日：2017-07-20

申请号：US15477646

申请日：2017-04-03

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Yukinori SHIMA ,  Masami JINTYOU ,  Daisuke KUROSAKI ,  Masataka NAKADA

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L29/36 ,  H01L29/04 ,  H01L29/24

CPC classification number: H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/36 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78621 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: In a semiconductor device including a transistor, the transistor is provided over a first insulating film, and the transistor includes an oxide semiconductor film over the first insulating film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the oxide semiconductor film and the gate electrode, and a source and a drain electrodes electrically connected to the oxide semiconductor film. The first insulating film includes oxygen. The second insulating film includes hydrogen. The oxide semiconductor film includes a first region in contact with the gate insulating film and a second region in contact with the second insulating film. The first insulating film includes a third region overlapping with the first region and a fourth region overlapping with the second region. The impurity element concentration of the fourth region is higher than that of the third region.

公开(公告)号：US20170110588A1

公开(公告)日：2017-04-20

申请号：US15389846

申请日：2016-12-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Yukinori SHIMA ,  Hajime TOKUNAGA ,  Toshinari SASAKI ,  Keisuke MURAYAMA ,  Daisuke MATSUBAYASHI

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/78606 ,  H01L21/02109 ,  H01L21/02263 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/51 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device includes a transistor including a gate electrode over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, and an oxide insulating film covering the transistor. The multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the oxide insulating film contains more oxygen than that in the stoichiometric composition, and in the transistor, by a bias-temperature stress test, threshold voltage does not change or the amount of the change in a positive direction or a negative direction is less than or equal to 1.0 V, preferably less than or equal to 0.5 V.

公开(公告)号：US20170104089A1

公开(公告)日：2017-04-13

申请号：US15286892

申请日：2016-10-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Yasuharu HOSAKA ,  Yasutaka NAKAZAWA ,  Takashi HAMOCHI ,  Takahiro SATO ,  Shunpei YAMAZAKI

IPC: H01L29/66 ,  H01L29/786 ,  H01L21/02 ,  H01L21/383 ,  H01L23/31 ,  H01L23/29 ,  H01L29/40 ,  H01L29/49

CPC classification number: H01L29/66969 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/383 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/24 ,  H01L29/408 ,  H01L29/4908 ,  H01L29/7781 ,  H01L29/7782 ,  H01L29/7786 ,  H01L29/7869 ,  H01L29/78696

Abstract: A change in electrical characteristics of a semiconductor device including an oxide semiconductor is prevented, and the reliability of the semiconductor device is improved. An oxide semiconductor is formed over a substrate; an insulator is formed over the oxide semiconductor; a metal oxide is formed over the insulator; a conductor is formed over the metal oxide; a portion of the oxide semiconductor is exposed by removing the conductor, the metal oxide, and the insulator over the oxide semiconductor; plasma treatment is performed on a surface of the exposed portion of the oxide semiconductor; and a nitride insulator is formed over the exposed portion of the oxide semiconductor and over the conductor. The plasma treatment is performed in a mixed atmosphere of an argon gas and a nitrogen gas.

公开(公告)号：US20170104013A1

公开(公告)日：2017-04-13

申请号：US15385157

申请日：2016-12-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki MIYAKE ,  Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Shunpei YAMAZAKI

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  H01L27/1237 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/7869

Abstract: A light-emitting device capable of suppressing variation in luminance among pixels is provided. A light-emitting device includes a pixel and first and second circuits. The first circuit has a function of generating a signal including a value of current extracted from the pixel. The second circuit has a function of correcting an image signal by the signal. The pixel includes at least a light-emitting element and first and second transistors. The first transistor has a function of controlling supply of the current to the light-emitting element by the image signal. The second transistor has a function of controlling extraction of the current from the pixel. A semiconductor film of each of the first and second transistors includes a first semiconductor region overlapping with a gate, a second semiconductor region in contact with a source or a drain, and a third semiconductor region between the first and second semiconductor regions.

公开(公告)号：US20170053950A1

公开(公告)日：2017-02-23

申请号：US15346173

申请日：2016-11-08

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Daisuke KUROSAKI ,  Masataka NAKADA ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1251 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/124 ,  H01L29/78603 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device including an oxide semiconductor in which on-state current is high is provided. The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. Furthermore, the first transistor and the second transistor are transistors having a top-gate structure. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. The first transistor provided in the driver circuit portion includes two gate electrodes between which the oxide semiconductor film is provided.

Abstract translation: 提供了包括其中导通电流高的氧化物半导体的半导体器件。 该半导体器件包括设置在驱动电路部分中的第一晶体管和设置在像素部分中的第二晶体管; 第一晶体管和第二晶体管具有不同的结构。 此外，第一晶体管和第二晶体管是具有顶栅结构的晶体管。 在每个晶体管的氧化物半导体膜中，杂质元素包含在不与栅电极重叠的区域中。 含有杂质元素的氧化物半导体膜的区域用作低电阻区域。 此外，含有杂质元素的氧化物半导体膜的区域与含有氢的膜接触。 设置在驱动电路部分的第一晶体管包括设置氧化物半导体膜的两个栅电极。

公开(公告)号：US20170047435A1

公开(公告)日：2017-02-16

申请号：US15340031

申请日：2016-11-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Daisuke KUROSAKI ,  Yukinori SHIMA ,  Yasuharu HOSAKA

IPC: H01L29/66 ,  H01L21/02 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/1259 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: The transistor includes a gate electrode, a gate insulating film over the gate electrode, an oxide semiconductor film over the gate insulating film, a source electrode and a drain electrode electrically connected to the oxide semiconductor film. The oxide semiconductor film includes a first oxide semiconductor film on the gate electrode side and a second oxide semiconductor film over the first oxide semiconductor film. The first oxide semiconductor film includes a first region in which an atomic proportion of In is larger than that of M (M is Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf). The second oxide semiconductor film includes a second region in which an atomic proportion of In is smaller than that of the first oxide semiconductor film. The second region includes a portion thinner than the first region.

Abstract translation: 晶体管包括栅电极，栅电极上的栅极绝缘膜，栅极绝缘膜上的氧化物半导体膜，与氧化物半导体膜电连接的源电极和漏电极。 氧化物半导体膜包括栅电极侧的第一氧化物半导体膜和第一氧化物半导体膜上的第二氧化物半导体膜。 第一氧化物半导体膜包括其中In的原子比例大于M（M为Ti，Ga，Sn，Y，Zr，La，Ce，Nd或Hf）的原子比例的第一区域。 第二氧化物半导体膜包括其中In的原子比例小于第一氧化物半导体膜的原子比例的第二区域。 第二区域包括比第一区域薄的部分。

公开(公告)号：US20170033229A1

公开(公告)日：2017-02-02

申请号：US15290442

申请日：2016-10-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Yukinori SHIMA ,  Hajime TOKUNAGA

IPC: H01L29/786 ,  H01L29/51 ,  H01L29/24 ,  H01L29/423 ,  H01L21/02 ,  H01L29/66 ,  H01L29/49

CPC classification number: H01L29/7869 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66969 ,  H01L29/78696

Abstract: A highly reliable semiconductor device including an oxide semiconductor is provided by preventing a change in its electrical characteristics. A semiconductor device which includes a first oxide semiconductor layer which is in contact with a source electrode layer and a drain electrode layer and a second oxide semiconductor layer which serves as a main current path (channel) of a transistor is provided. The first oxide semiconductor layer serves as a buffer layer for preventing a constituent element of the source and drain electrode layers from diffusing into the channel. By providing the first oxide semiconductor layer, it is possible to prevent diffusion of the constituent element into an interface between the first oxide semiconductor layer and the second oxide semiconductor layer and into the second oxide semiconductor layer.

Abstract translation: 通过防止其电特性的改变来提供包括氧化物半导体的高度可靠的半导体器件。 提供一种半导体器件，其包括与源电极层和漏电极层接触的第一氧化物半导体层和用作晶体管的主电流路径（沟道）的第二氧化物半导体层。 第一氧化物半导体层用作用于防止源电极层和漏极电极层的构成元素扩散到沟道中的缓冲层。 通过设置第一氧化物半导体层，可以防止构成元素扩散到第一氧化物半导体层和第二氧化物半导体层之间的界面中并进入第二氧化物半导体层。

公开(公告)号：US20160343868A1

公开(公告)日：2016-11-24

申请号：US15160059

申请日：2016-05-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/04 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78648 ,  H01L29/78693 ,  H01L29/78696

Abstract: The reliability of a transistor including an oxide semiconductor is improved. The transistor in a semiconductor device includes a first oxide semiconductor film over a first insulating film, a gate insulating film over the first oxide semiconductor film, a second oxide semiconductor film over the gate insulating film, and a second insulating film over the first oxide semiconductor film and the second oxide semiconductor film. The first oxide semiconductor film includes a channel region overlapping with the second oxide semiconductor film, a source region and a drain region each in contact with the second insulating film. The channel region includes a first layer and a second layer in contact with a top surface of the first layer and covering a side surface of the first layer in the channel width direction. The second oxide semiconductor film has a higher carrier density than the first oxide semiconductor film.

Abstract translation: 提高了包括氧化物半导体的晶体管的可靠性。 半导体器件中的晶体管包括第一绝缘膜上的第一氧化物半导体膜，第一氧化物半导体膜上的栅极绝缘膜，栅极绝缘膜上的第二氧化物半导体膜，以及第一氧化物半导体上的第二绝缘膜 膜和第二氧化物半导体膜。 第一氧化物半导体膜包括与第二氧化物半导体膜重叠的沟道区，与第二绝缘膜接触的源极区和漏极区。 沟道区域包括与第一层的顶表面接触并在沟道宽度方向覆盖第一层的侧表面的第一层和第二层。 第二氧化物半导体膜具有比第一氧化物半导体膜更高的载流子密度。

公开(公告)号：US20160268441A1

公开(公告)日：2016-09-15

申请号：US15161329

申请日：2016-05-23

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Takashi HAMOCHI ,  Yasutaka NAKAZAWA

IPC: H01L29/786 ,  G02F1/1339 ,  G02F1/1333 ,  G02F1/1368 ,  H01L27/12 ,  G02F1/1335

CPC classification number: H01L29/78606 ,  G02F1/133345 ,  G02F1/133512 ,  G02F1/133514 ,  G02F1/13394 ,  G02F1/1368 ,  H01L27/1225 ,  H01L27/1233 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/3262 ,  H01L29/1033 ,  H01L29/45 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: To provide a semiconductor device including a transistor in which an oxide semiconductor is used and on-state current is high. In a semiconductor device including a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion, the first transistor and the second transistor have different structures. Furthermore, the first transistor and the second transistor are transistors having a top-gate structure in which conductive films serving as a gate electrode, a source electrode, and a drain electrode do not overlap. Furthermore, in an oxide semiconductor film, an impurity element is contained in a region which does not overlap with the gate electrode, the source electrode, and the drain electrode.

公开(公告)号：US20160240683A1

公开(公告)日：2016-08-18

申请号：US15012403

申请日：2016-02-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki MIYAKE ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Daisuke KUROSAKI ,  Yukinori SHIMA ,  Satoru SAITO

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/124 ,  H01L29/78696

Abstract: To reduce parasitic capacitance in a semiconductor device having a transistor including an oxide semiconductor. The transistor includes a first gate electrode, a first gate insulating film over the first gate electrode, an oxide semiconductor film over the first gate insulating film, and source and drain electrodes electrically connected to the oxide semiconductor film. The oxide semiconductor film includes a first oxide semiconductor film on the first gate electrode side and a second oxide semiconductor film over the first oxide semiconductor film. The atomic proportion of In is larger than the atomic proportion of M (M is Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf) in the first oxide semiconductor film, and the atomic proportion of In in the second oxide semiconductor film is smaller than that in the first oxide semiconductor film.

Abstract translation: 减少具有包括氧化物半导体的晶体管的半导体器件中的寄生电容。 晶体管包括第一栅极电极，第一栅电极上的第一栅极绝缘膜，第一栅极绝缘膜上的氧化物半导体膜，以及电连接到氧化物半导体膜的源极和漏极。 氧化物半导体膜包括第一栅电极侧的第一氧化物半导体膜和第一氧化物半导体膜上的第二氧化物半导体膜。 In的原子比例大于第一氧化物半导体膜中的M（M为Ti，Ga，Sn，Y，Zr，La，Ce，Nd或Hf）的原子比例，并且In的原子比例 第二氧化物半导体膜比第一氧化物半导体膜小。