公开(公告)号：USD530946S1

公开(公告)日：2006-10-31

申请号：US29200975

申请日：2004-03-08

申请人： Nobuyuki Wakuda ,  Hiroshi Shibata

设计人： Nobuyuki Wakuda ,  Hiroshi Shibata

公开(公告)号：US07115903B2

公开(公告)日：2006-10-03

申请号：US10330024

申请日：2002-12-27

申请人： Atsuo Isobe ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Shunpei Yamazaki ,  Mai Akiba

发明人： Atsuo Isobe ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Shunpei Yamazaki ,  Mai Akiba

IPC分类号： H01L31/36 ,  H01L21/84

CPC分类号： H01L21/02683 ,  B23K26/032 ,  B23K26/0608 ,  B23K26/067 ,  B23K26/0738 ,  B23K26/0853 ,  B23K26/10 ,  B23K26/702 ,  B23K2101/40 ,  H01L21/2026 ,  H01L27/1281 ,  H01L29/78603

摘要： An insulating film having depressions and projections are formed on a substrate. A semiconductor film is formed on the insulating film. Thus, for crystallization by using laser light, a part where stress concentrates is selectively formed in the semiconductor film. More specifically, stripe or rectangular depressions and projections are provided in the semiconductor film. Then, continuous-wave laser light is irradiated along the stripe depressions and projections formed in the semiconductor film or in a direction of a major axis or minor axis of the rectangle.

公开(公告)号：US20060194375A1

公开(公告)日：2006-08-31

申请号：US11321642

申请日：2005-12-30

申请人： Hiroshi Shibata ,  Atsuo Isobe

发明人： Hiroshi Shibata ,  Atsuo Isobe

IPC分类号： H01L21/84

CPC分类号： H01L27/1248 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2201/40 ,  H01L27/124 ,  H01L27/1255

摘要： To provide a liquid crystal display device having high quality display with a high aperture ratio while securing a sufficient storage capacitor (Cs), and at the same time, by dispersing a load (a pixel writing-in electric current) of a capacitor wiring in a timely manner to effectively reduce the load. A scanning line is formed on a layer that is different from a gate electrode so that the capacitor wiring is arranged in parallel with a signal line. Each pixel is connected to the individually independent capacitor wiring via a dielectric. Therefore, variations in the electric potential of the capacitor wiring caused by a writing-in electric current of adjacent pixels can be avoided, thereby obtaining satisfactory display images.

公开(公告)号：US07078277B2

公开(公告)日：2006-07-18

申请号：US10996228

申请日：2004-11-23

申请人： Tatsuya Arao ,  Yoshifumi Tanada ,  Hiroshi Shibata

发明人： Tatsuya Arao ,  Yoshifumi Tanada ,  Hiroshi Shibata

IPC分类号： H01L21/00

CPC分类号： G02F1/136213 ,  G02F1/136209 ,  G02F2201/40 ,  H01L27/1255 ,  H01L29/78621 ,  H01L29/78633 ,  H01L29/78645

摘要： It is a problem to realize, by a reduced number of processes than that of the conventional, a reliable active-matrix liquid crystal display device having a high opening ratio for high-definition display. The present invention is characterized by: forming a gate electrode and source and drain interconnections in the same process, forming a first insulating film covering the interconnections, forming an upper light-shielding film on the first insulating film, forming a second insulating film on the upper light-shielding film, partially etching the first and second insulating films to form a contact hole reaching the drain interconnection, and forming a pixel electrode on the second insulating film to connect to the drain interconnection. Meanwhile, a holding capacitance is formed by the upper light-shielding film, the second insulating film and the pixel electrode.

公开(公告)号：US07061247B2

公开(公告)日：2006-06-13

申请号：US10756295

申请日：2004-01-14

申请人： Takatoshi Inokuchi ,  Yasuhiro Takase ,  Hiroshi Shibata ,  Makoto Taniguchi ,  Atsushi Ichikawa

发明人： Takatoshi Inokuchi ,  Yasuhiro Takase ,  Hiroshi Shibata ,  Makoto Taniguchi ,  Atsushi Ichikawa

IPC分类号： G01N27/416 ,  H02J7/00

CPC分类号： B60W20/13 ,  B60L11/123 ,  B60W10/06 ,  B60W10/08 ,  B60W10/24 ,  B60W10/26 ,  B60W20/00 ,  B60W2510/244 ,  B60W2510/246 ,  B60W2710/242 ,  H02J7/14 ,  Y02T10/6217 ,  Y02T10/6286 ,  Y02T10/7005 ,  Y02T10/7077

摘要： A power generating system for a vehicle is configured to include a power generator, a voltage control device which controls an output voltage of the power generator, a battery which is charged by output power of the power generator, and an ECU which transmits a power generation suppression signal for suppressing power generation by the power generator when a predetermined condition is satisfied toward the voltage control device. The ECU detects a state of the battery, and inhibits transmission of the power generation suppression signal when quantity of this state is below a predetermined value.

摘要翻译： 一种车辆用发电系统，其特征在于，包括发电机，控制所述发电机的输出电压的电压控制装置，通过所述发电机的输出功率充电的电池，以及发送发电的ECU 抑制信号，用于当向电压控制装置满足预定条件时抑制发电机的发电。 ECU检测电池的状态，并且当该状态的量低于预定值时，禁止发电抑制信号的发送。

公开(公告)号：US20060113543A1

公开(公告)日：2006-06-01

申请号：US11298378

申请日：2005-12-08

申请人： Shunpei Yamazaki ,  Taketomi Asami ,  Toru Takayama ,  Ritsuko Kawasaki ,  Hiroki Adachi ,  Naoya Sakamoto ,  Masahiko Hayakawa ,  Hiroshi Shibata ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Taketomi Asami ,  Toru Takayama ,  Ritsuko Kawasaki ,  Hiroki Adachi ,  Naoya Sakamoto ,  Masahiko Hayakawa ,  Hiroshi Shibata ,  Yasuyuki Arai

IPC分类号： H01L29/04

CPC分类号： H01L29/7842 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78636 ,  H01L29/78645 ,  H01L2029/7863

摘要： In a semiconductor device including a laminate of a first insulating layer, a crystalline semiconductor layer, and a second insulating layer, characteristics of the device are improved by determining its structure in view of stress balance. In the semiconductor device including an active layer of the crystalline semiconductor layer having tensile stress on a substrate, tensile stress is given to the first insulating layer formed to be in close contact with a surface of the semiconductor layer at a substrate side, and compressive stress is given to the second insulating layer formed to be in close contact with a surface of the semiconductor layer at a side opposite to the substrate side.

公开(公告)号：US20050245007A1

公开(公告)日：2005-11-03

申请号：US11159278

申请日：2005-06-23

申请人： Munehiro Azami ,  Chiho Kokubo ,  Aiko Shiga ,  Atsuo Isobe ,  Hiroshi Shibata ,  Shunpei Yamazaki

发明人： Munehiro Azami ,  Chiho Kokubo ,  Aiko Shiga ,  Atsuo Isobe ,  Hiroshi Shibata ,  Shunpei Yamazaki

IPC分类号： G02F1/1368 ,  G09F9/00 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786 ,  H01L21/00 ,  H01L31/112 ,  H01L29/76 ,  H01L29/10 ,  H01L31/036

CPC分类号： H01L21/02678 ,  H01L21/02683 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1281 ,  H01L27/1285 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78675

摘要： A method for manufacturing a semiconductor device having steps of forming an amorphous semiconductor on a substrate having an insulating surface; patterning the amorphous semiconductor to form plural first island-like semiconductors; irradiating a linearly condensed laser beam on the plural first island-like semiconductors while relatively scanning the substrate, thus crystallizing the plural first island-like semiconductors; patterning the plural first island-like semiconductors that have been crystallized to form plural second island-like semiconductors; forming plural transistors using the plural second island-like semiconductors; and forming a unit circuit using a predetermined number of the transistors, where the second island-like semiconductors used for the predetermined number of the transistors are formed from the first island-like semiconductors that are different from each other.

公开(公告)号：US20050161742A1

公开(公告)日：2005-07-28

申请号：US11087652

申请日：2005-03-24

申请人： Atsuo Isobe ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Shunpei Yamazaki ,  Mai Akiba

发明人： Atsuo Isobe ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Shunpei Yamazaki ,  Mai Akiba

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L27/01 ,  H01L31/0392

CPC分类号： H01L21/02683 ,  H01L21/2022 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78696

摘要： It is a problem to provide a semiconductor device production system using a laser crystallization method capable of preventing grain boundaries from forming in a TFT channel region and further preventing conspicuous lowering in TFT mobility due to grain boundaries, on-current decrease or off-current increase. An insulation film is formed on a substrate, and a semiconductor film is formed on the insulation film. Due to this, preferentially formed is a region in the semiconductor film to be concentratedly applied by stress during crystallization with laser light. Specifically, a stripe-formed or rectangular concavo-convex is formed on the semiconductor film. Continuous-oscillation laser light is irradiated along the striped concavo-convex or along a direction of a longer or shorter axis of rectangle.

公开(公告)号：US20050098784A1

公开(公告)日：2005-05-12

申请号：US11013539

申请日：2004-12-17

申请人： Atsuo Isobe ,  Shunpei Yamazaki ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Mai Akiba

发明人： Atsuo Isobe ,  Shunpei Yamazaki ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Mai Akiba

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L21/00 ,  H01L29/76

CPC分类号： H01L27/1222 ,  B23K26/0738 ,  H01L21/02354 ,  H01L21/02356 ,  H01L21/02675 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/32139 ,  H01L21/84 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1274 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78696 ,  Y10S118/90 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

摘要翻译： 提供了一种使用激光晶化方法的半导体器件制造系统，其可以避免在TFT的沟道形成区域中形成晶界，从而防止晶界大大降低TFT的迁移率，降低导通电流，并且提高截止电流 。 在绝缘膜上形成矩形或条纹图案凹陷和突出部分。 绝缘膜上形成半导体膜。 通过沿着条形图案凹陷和绝缘膜的突出部分沿着矩形的长轴或短轴方向运行激光来对连续波激光照射半导体膜。 尽管在激光中最优选连续波激光，但也可以在照射半导体膜时使用脉冲振荡激光。

公开(公告)号：US06645826B2

公开(公告)日：2003-11-11

申请号：US10093313

申请日：2002-03-07

申请人： Shunpei Yamazaki ,  Taketomi Asami ,  Toru Takayama ,  Ritsuko Kawasaki ,  Hiroki Adachi ,  Naoya Sakamoto ,  Masahiko Hayakawa ,  Hiroshi Shibata ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Taketomi Asami ,  Toru Takayama ,  Ritsuko Kawasaki ,  Hiroki Adachi ,  Naoya Sakamoto ,  Masahiko Hayakawa ,  Hiroshi Shibata ,  Yasuyuki Arai

IPC分类号： H01L2126

CPC分类号： H01L29/7842 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78636 ,  H01L29/78645 ,  H01L2029/7863

摘要： In a semiconductor device including a laminate of a first insulating layer, a crystalline semiconductor layer, and a second insulating layer, characteristics of the device are improved by determining its structure in view of stress balance. In the semiconductor device including an active layer of the crystalline semiconductor layer having tensile stress on a substrate, tensile stress is given to the first insulating layer formed to be in close contact with a surface of the semiconductor layer at a substrate side, and compressive stress is given to the second insulating layer formed to be in close contact with a surface of the semiconductor layer at a side opposite to the substrate side.