Abstract:
A system provides post-match control of microwaves in a radial waveguide. The system includes the radial waveguide, and a signal generator that provides first and second microwave signals that have a common frequency. The signal generator adjusts a phase offset between the first and second signals in response to a correction signal. The system also includes first and second electronics sets, each of which amplifies a respective one of the first and second microwave signals. The system transmits the amplified, first and second microwave signals into the radial waveguide, and matches an impedance of the amplified microwave signals to an impedance presented by the waveguide. The system also includes at least two monitoring antennas disposed within the waveguide. A signal controller receives analog signals from the monitoring antennas, determines the digital correction signal based at least on the analog signals, and transmits the correction signal to the signal generator.
Abstract:
Disclosed is a microwave plasma processing apparatus including: a processing container configured to define a processing space; a microwave generator configured to generate microwaves; a distributor configured to distribute the microwaves to a plurality of waveguides; an antenna installed in the processing container and to radiate the microwaves distributed to the plurality of waveguides to the processing space; a monitor unit configured to monitor a voltage of each of the plurality of waveguides; a storage unit configured to store a difference between a monitor value of the voltage monitored by the monitor unit and a predetermined reference value of the voltage and a control value of a distribution ratio of the distributor corresponding to the difference; and a control unit configured to acquire the control value of the distribution ratio of the distributor from the storage unit and to control the distribution ratio of the distributor.
Abstract:
A microwave plasma processing apparatus includes a processing space; a microwave generator which generates microwaves for generating a plasma; a distributor which distributes the microwaves to a plurality of waveguides; an antenna installed in a processing container to seal the processing space and to radiate microwaves distributed by the distributor, to the processing space; and a monitor unit configured to monitor a voltage of each of the plurality of waveguides. A control unit acquires a control value of a distribution ratio of the distributor, which corresponds to a difference between a voltage monitor value of the monitor unit and a predetermined voltage reference value, from a storage unit that stores the difference and the control value corresponding to each other. The control unit is also configured to control the distribution ratio of the distributor, based on the acquired control value.
Abstract:
A microwave emission mechanism includes: a transmission path through which a microwave is transmitted; and an antenna section that emits into a chamber the microwave transmitted through the transmission path. The antenna section includes an antenna having a slot through which the microwave is emitted, a dielectric member through which the microwave emitted from the antenna is transmitted and a closed circuit in which a surface current and a displacement current flow. A surface wave is formed in a surface of the dielectric member. The closed circuit has at least: an inner wall of the slot; and the surface and an inner portion of the dielectric member. When a wavelength of the microwave is λ0, a length of the closed circuit is nλ0±δ, where n is a positive integer and δ is a fine-tuning component including 0.
Abstract:
The invention relates to a facility (1) for microwave treatment of a load, including: at least one application device (30); at least one solid-state generator (4) in the field of microwaves, connected to at least one application device by a means for guiding (5) the electromagnetic wave; at least one frequency adjustment system (40) designed for adjusting the frequency of the wave produced by the corresponding generator (4); a measurement system (31) for the or each application device (30), designed for measuring the power reflected PR(i) by the application device (30); an automated control means (6) connected to each frequency adjustment system (40) and to each measurement system (31) in order to control the adjustment of the frequency f(i) of the electromagnetic wave according to the reflected power, in order to adjust the reflected power PR(i) and/or to adjust the transmitted power PT(i).
Abstract:
Provided is a portable power supply apparatus for generating microwave plasma, capable of minimizing a power reflected from a plasma generation apparatus and improving power consumption of the plasma generation apparatus by generating the plasma by using a microwave having a specific frequency, monitoring the power reflected from the plasma generation apparatus after the generation of the plasma, detecting a changed impedance matching condition, and correcting the frequency.
Abstract:
Provided is a portable power supply apparatus for generating microwave plasma, capable of minimizing a power reflected from a plasma generation apparatus and improving power consumption of the plasma generation apparatus by generating the plasma by using a microwave having a specific frequency, monitoring the power reflected from the plasma generation apparatus after the generation of the plasma, detecting a changed impedance matching condition, and correcting the frequency.
Abstract:
A magnetron (2), a launcher (4) which extracts the output power of the magnetron (2), an impedance generator (5) having one terminal connected to the output terminal of the launcher (4), and a reference signal supplier (6) connected to the other terminal of the impedance generator (5) are included. The reference signal supplier (6) supplies, to the magnetron (2), a reference signal lower in electric power and stabler in frequency than the output from the magnetron (2). The oscillation frequency of the magnetron (2) is locked to the frequency of the reference signal by injection of the reference signal. The impedance generator (5) can reduce the change width of the oscillation frequency of the magnetron (2) by adjusting the load impedance of the magnetron (2). This implements a magnetron oscillator (1) which has high frequency stability and does not fluctuate the frequency even when the output power is changed.
Abstract:
A microwave generation device includes: a magnetron having a cathode containing a filament and an anode containing a hollow resonator arranged to oppose to each other; a filament current measuring unit; and an application voltage measuring unit for measuring voltage applied to the filament. Based on the current and the voltage obtained by the current measuring unit and the voltage measuring unit, a resistance value calculation unit obtains a resistance value of the filament. A temperature calculation unit calculates the filament temperature from the resistance value and the resistance-temperature dependent characteristic. A filament power source is controlled by a power control unit so that the filament temperature is within a predetermined temperature range.
Abstract:
A method of generating a film during a chemical vapor deposition process is disclosed. One embodiment includes generating a first electrical pulse having a first pulse amplitude; using the first electrical pulse to generate a first density of radicalized species; disassociating a feedstock gas using the radicalized species in the first density of radicalized species, thereby creating a first deposition material; depositing the first deposition material on a substrate; generating a second electrical pulse having a second pulse amplitude, wherein the second pulse amplitude is different from the first pulse width; using the second electrical pulse to generate a second density of radicalized species; disassociating a feedstock gas using the radicalized species in the second density of radicalized species, thereby creating a second deposition material; and depositing the second plurality of deposition materials on the first deposition material.