公开(公告)号：US20190237099A1

公开(公告)日：2019-08-01

申请号：US16311367

申请日：2017-06-23

申请人： NATIONAL INSTITUTE FOR MATERIALS SCIENCE

发明人： Shinya KASAI ,  Yukiko TAKAHASHI ,  Pohan CHENG ,  IKHTIAR ,  Seiji MITANI ,  Tadakatsu OHKUBO ,  Kazuhiro HONO

IPC分类号： G11B5/39 ,  H01F10/13 ,  H01F10/16 ,  H01F10/30 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

CPC分类号： G11B5/3909 ,  G11B5/39 ,  H01F10/13 ,  H01F10/132 ,  H01F10/16 ,  H01F10/30 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： An object of the present invention is to provide a Magneto-Resistance (MR) element showing a high Magneto-Resistance (MR) ratio and having a suitable Resistance-Area (RA) for device applications. The MR element of the present invention has a laminated structure including a first ferromagnetic layer 16, a non-magnetic layer 18, and a second ferromagnetic layer 20 on a substrate 10, wherein the first ferromagnetic layer 16 includes a Heusler alloy, the second ferromagnetic layer 20 includes a Heusler alloy, the non-magnetic layer 18 includes a I-III-VI2 chalcopyrite-type compound semiconductor, and the non-magnetic layer 18 has a thickness of 0.5 to 3 nm, and wherein the MR element shows a Magneto-Resistance (MR) change of 40% or more, and has a resistance-area (RA) of 0.1 [Ωμm2] or more and 3 [Ωμm2] or less.

公开(公告)号：US20190140168A1

公开(公告)日：2019-05-09

申请号：US16221868

申请日：2018-12-17

申请人： Headway Technologies, Inc.

发明人： Jian Zhu ,  Guenole Jan ,  Yuan-Jen Lee ,  Huanlong Liu ,  Ru-Ying Tong ,  Jodi Mari Iwata ,  Vignesh Sundar ,  Luc Thomas ,  Yu-Jen Wang ,  Sahil Patel

IPC分类号： H01L43/12 ,  H01L43/10 ,  H01L43/08 ,  H01F10/16 ,  H01F10/32 ,  H01F10/30 ,  G11C11/16 ,  H01F41/30

摘要： A seed layer stack with a uniform top surface having a peak to peak roughness of 0.5 nm is formed by sputter depositing an amorphous layer on a smoothing layer such as Mg where the latter has a resputtering rate 2 to 30× that of the amorphous layer. The uppermost seed (template) layer is NiW, NiMo, or one or more of NiCr, NiFeCr, and Hf while the bottommost seed layer is one or more of Ta, TaN, Zr, ZrN, Nb, NbN, Mo, MoN, TiN, W, WN, and Ru. Accordingly, perpendicular magnetic anisotropy in an overlying magnetic layer is substantially maintained during high temperature processing up to 400° C. and is advantageous for magnetic tunnel junctions in embedded MRAMs, spintronic devices, or in read head sensors. The amorphous seed layer is SiN, TaN, or CoFeM where M is B or another element with a content that makes CoFeM amorphous as deposited.

公开(公告)号：US20190139568A1

公开(公告)日：2019-05-09

申请号：US16221901

申请日：2018-12-17

申请人： BROWN UNIVERSITY

发明人： Gang Xiao ,  Qiang Hao

IPC分类号： G11B5/37 ,  H01L43/14 ,  H01L43/12 ,  H01F10/30 ,  H01F10/32 ,  H03K19/18 ,  H01L43/10

CPC分类号： G11B5/37 ,  H01F10/30 ,  H01F10/329 ,  H01L43/10 ,  H01L43/12 ,  H01L43/14 ,  H03K19/18

摘要： Methods, devices, and compositions for use with spintronic devices such as magnetic random access memory (MRAM) and spin-logic devices are provided. Methods include manipulating magnetization states in spintronic devices and making a structure using spin transfer torque to induce magnetization reversal. A device described herein manipulates magnetization states in spintronic devices and includes a non-magnetic metal to generate spin current based on the giant spin Hall effect, a ferromagnetic thin film with perpendicular magnetic anisotropy, an oxide thin film, and an integrated magnetic sensor. The device does not require an insertion layer between a non-magnetic metal with giant spin Hall effect and a ferromagnetic thin film to achieve perpendicular magnetic anisotropy.

公开(公告)号：US10177305B2

公开(公告)日：2019-01-08

申请号：US15410594

申请日：2017-01-19

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Jaewoo Jeong ,  Stuart S. P. Parkin ,  Mahesh G. Samant

IPC分类号： H01L43/10 ,  H01F10/16 ,  H01F41/14 ,  H01L43/08 ,  H01L43/12 ,  C22C22/00 ,  C22C19/07 ,  C22F1/10 ,  C22F1/16 ,  H01F10/193 ,  H01F10/30 ,  G11C11/16 ,  H01F10/12 ,  H01F10/32

摘要： Devices are described that include a multi-layered structure that is non-magnetic at room temperature, and which comprises alternating layers of Co and at least one other element E (such as Ga, Ge, and Sn). The composition of this structure is represented by Co1-xEx, with x being in the range from 0.45 to 0.55. The structure is in contact with a first magnetic layer that includes a Heusler compound. An MRAM element may be formed by overlying, in turn, the first magnetic layer with a tunnel barrier, and the tunnel barrier with a second magnetic layer (whose magnetic moment is switchable). Improved performance of the MRAM element may be obtained by placing a pinning layer between the first magnetic layer and the tunnel barrier.

公开(公告)号：US09780298B2

公开(公告)日：2017-10-03

申请号：US14859024

申请日：2015-09-18

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Eiji Kitagawa ,  Tadaomi Daibou ,  Tadashi Kai ,  Toshihiko Nagase ,  Kenji Noma ,  Hiroaki Yoda

IPC分类号： H01L43/02 ,  G01R33/09 ,  H01F10/30 ,  G11B5/66 ,  G11C11/16 ,  H01L43/08 ,  H01L43/10 ,  H01L27/22

CPC分类号： H01L43/02 ,  G01R33/091 ,  G01R33/093 ,  G11B5/66 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/30 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： According to one embodiment, a magnetoresistive element includes a recording layer having a variable magnetization direction, a reference layer having an invariable magnetization direction, an intermediate layer provided between the recording layer and the reference layer, and a first buffer layer provided on a surface of the recording layer, which is opposite to a surface of the recording layer where the intermediate layer is provided. The recording layer comprises a first magnetic layer which is provided in a side of the intermediate layer and contains CoFe as a main component, and a second magnetic layer which is provided in a side of the first buffer layer and contains CoFe as a main component, a concentration of Fe in the first magnetic layer being higher than a concentration of Fe in the second magnetic layer. The first buffer layer comprises a nitrogen compound.

公开(公告)号：US09761254B2

公开(公告)日：2017-09-12

申请号：US15363168

申请日：2016-11-29

申请人： Headway Technologies, Inc.

发明人： Yuchen Zhou ,  Kunliang Zhang ,  Zhi Gang Bai

IPC分类号： G11B5/39 ,  G11B5/11 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/09 ,  H01F10/30 ,  H01F10/32 ,  H01F41/30 ,  B82Y40/00 ,  H01L43/02 ,  H01L43/08

CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3912 ,  G11B2005/3996 ,  H01F10/30 ,  H01F10/3259 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/02 ,  H01L43/08

摘要： A MR sensor is disclosed that has a free layer (FL) with perpendicular magnetic anisotropy (PMA), which eliminates the need for an adjacent hard bias structure to stabilize free layer magnetization, and minimizes shield-FL interactions. In a TMR embodiment, a seed layer, free layer, junction layer, reference layer, and pinning layer are sequentially formed on a bottom shield. After forming a sensor sidewall that stops in the seed layer or on the bottom shield, a conformal insulation layer is deposited. Thereafter, a top shield is formed on the insulation layer and includes side shields that are separated from the FL by a narrow read gap. The sensor is scalable to widths

公开(公告)号：US20170229643A1

公开(公告)日：2017-08-10

申请号：US15424515

申请日：2017-02-03

申请人： NATIONAL INSTITUTE FOR MATERIALS SCIENCE

发明人： Jiamin CHEN ,  Yuya SAKURABA ,  Jun LIU ,  Hiroaki SUKEGAWA ,  Kazuhiro HONO

IPC分类号： H01L43/10 ,  H01L43/12 ,  H01F10/30 ,  H01L43/08 ,  H01F10/16 ,  H01F10/28

CPC分类号： H01L43/10 ,  H01F10/16 ,  H01F10/1936 ,  H01F10/28 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08 ,  H01L43/12

摘要： To provide a key monocrystalline magnetoresistance element necessary for accomplishing mass production and cost reduction for applying a monocrystalline giant magnetoresistance element using a Heusler alloy to practical devices. A monocrystalline magnetoresistance element of the present invention includes a silicon substrate 11, a base layer 12 having a B2 structure laminated on the silicon substrate 11, a first non-magnetic layer 13 laminated on the base layer 12 having a B2 structure, and a giant magnetoresistance effect layer 17 having at least one laminate layer including a lower ferromagnetic layer 14, an upper ferromagnetic layer 16, and a second non-magnetic layer 15 disposed between the lower ferromagnetic layer 14 and the upper ferromagnetic layer 16.

公开(公告)号：US09659585B2

公开(公告)日：2017-05-23

申请号：US13993166

申请日：2011-12-15

申请人： Eric Walter Singleton ,  Antonia Tsoukatos ,  Liwen Tan ,  Jae-Young Yi

发明人： Eric Walter Singleton ,  Antonia Tsoukatos ,  Liwen Tan ,  Jae-Young Yi

IPC分类号： G01R33/02 ,  G11B5/39 ,  B82Y25/00 ,  G01R33/09 ,  H01F10/30 ,  H01L43/08 ,  H01L43/10 ,  H01F41/30 ,  B82Y40/00 ,  H01F10/32

CPC分类号： G11B5/39 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3912 ,  H01F10/30 ,  H01F10/3272 ,  H01F41/307 ,  H01L43/08 ,  H01L43/10

摘要： A magnetic sensor has a bottom shield layer, an upper shield layer, and a sensor stack adjacent the upper shield layer. The sensor includes a seed layer between the bottom shield layer and an antiferromagnetic layer of the sensor stack. The seed layer has a magnetic layer adjacent the sensor stack and a nonmagnetic layer adjacent the bottom shield layer.

公开(公告)号：US20170117456A1

公开(公告)日：2017-04-27

申请号：US15344618

申请日：2016-11-07

申请人： Headway Technologies, Inc.

发明人： Guenole Jan ,  Ru-Ying Tong

IPC分类号： H01L43/08 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12 ,  H01F10/32 ,  H01F10/30

CPC分类号： H01L43/08 ,  G11C11/161 ,  H01F10/123 ,  H01F10/30 ,  H01F10/3272 ,  H01F10/3286 ,  H01F41/307 ,  H01L27/222 ,  H01L43/10 ,  H01L43/12

摘要： A magnetic element is disclosed wherein a composite seed layer such as TaN/Mg enhances perpendicular magnetic anisotropy (PMA) in an overlying magnetic layer that may be a reference layer, free layer, or dipole layer. The first seed layer is selected from one or more of Ta, Zr, Nb, TaN, ZrN, NbN, and Ru. The second seed layer is selected from one or more of Mg, Sr, Ti, Al, V, Hf, B, and Si. A growth promoting layer made of NiCr or an alloy thereof is inserted between the seed layer and magnetic layer. In some embodiments, a first composite seed layer/NiCr stack is formed below the reference layer, and a second composite seed layer/NiCr stack is formed between the free layer and a dipole layer. The magnetic element has thermal stability to at least 400° C.

公开(公告)号：US09634238B2

公开(公告)日：2017-04-25

申请号：US14710107

申请日：2015-05-12

申请人： Samsung Electronics Co., Ltd.

发明人： Kwang-seok Kim ,  Sung-chul Lee

IPC分类号： H01L43/02 ,  H01L43/08 ,  H01L43/12 ,  H01L27/22 ,  G11C11/16 ,  H01F10/30 ,  H01F10/32 ,  H01F41/30 ,  B82Y40/00

CPC分类号： H01L43/02 ,  B82Y40/00 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/302 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

摘要： Magnetic structures, methods of forming the same, and memory devices including a magnetic structure, include a magnetic layer, and a stress-inducing layer on a first surface of the magnetic layer, a non-magnetic layer on a second surface of the magnetic layer. The stress-inducing layer is configured to induce a compressive stress in the magnetic layer. The magnetic layer has a lattice structure compressively strained due to the stress-inducing layer.