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    Methods of implanting ions into different active areas to provide active areas having increased ion concentrations adjacent to isolation structures
    121.
    发明授权
    Methods of implanting ions into different active areas to provide active areas having increased ion concentrations adjacent to isolation structures 失效
    将离子注入不同的活性区域以提供具有与隔离结构相邻的增加的离子浓度的活性区域的方法

    公开(公告)号：US06562697B1

    公开(公告)日：2003-05-13

    申请号：US10093295

    申请日：2002-03-07

    Applicant: Chang-Hyun Cho ,  Ki-Nam Kim ,  Sang-Hyeon Lee

    Inventor： Chang-Hyun Cho ,  Ki-Nam Kim ,  Sang-Hyeon Lee

    IPC: H01L2176

    CPC classification number: H01L21/76237 ,  H01L21/823481

    Abstract: Active areas of integrated circuits can be formed by implanting first ions into a first active area of a substrate adjacent to an isolation structure in the substrate and between a source and a drain region of the integrated circuit to provide a first concentration of ions in the first active area. Second ions are implanted into the first active area and a second active area of the substrate adjacent to the first active area and spaced-apart from the isolation structure on the substrate to provide a second concentration of ions in the second active area and a third concentration of ions in the first active area that is greater than the first and second concentrations. As a result, the level of ion concentration can be higher at the edge of an active channel region than at the center of the channel. The increased concentration of ions in the active area adjacent to the side wall of the trench may reduce a current between the source and drain regions of the transistor when voltage that is less than a threshold voltage of the transistor is applied to the gate electrode of the transistor. Thus, a reduction in the threshold voltage of the transistor can be inhibited. Integrated circuit transistors are also disclosed.

    Abstract translation: 可以通过将第一离子注入与衬底中的隔离结构相邻的衬底的第一有源区域中并且在集成电路的源极和漏极区域之间注入第一离子以形成第一离子的第一浓度来形成集成电路的有源区域 活动区域。 将第二离子注入与第一有源区相邻的第一有源区和衬底的第二有源区，并与衬底上的隔离结构间隔开，以在第二有源区中提供第二离子浓度，并且将第三浓度 的第一活性区域中的离子，其大于第一和第二浓度。 结果，在有源沟道区的边缘处，离子浓度的水平可高于通道中心处的离子浓度。 当沟槽的侧壁附近的有源区域中的离子浓度的增加可以减小晶体管的源极和漏极区域之间的电流，当小于晶体管的阈值电压的电压被施加到晶体管的栅电极时 晶体管。 因此，可以抑制晶体管的阈值电压的降低。 还公开了集成电路晶体管。

    Method and apparatus for dubbing a recording tape
    122.
    发明授权
    Method and apparatus for dubbing a recording tape 失效
    用于复制记录带的方法和装置

    公开(公告)号：US06470134B1

    公开(公告)日：2002-10-22

    申请号：US09218452

    申请日：1998-12-22

    Applicant: Chang-Hyeon Lee

    Inventor： Chang-Hyeon Lee

    IPC: H04N592

    CPC classification number: H04N5/765 ,  G11B27/032 ,  G11B2220/90 ,  H04N5/772

    Abstract: A method and apparatus for dubbing a recording tape in a video recording and reproducing device. A source video recording and reproducing device reproduces data of a source recording tape in response to a dubbing demand from a user and confirms an error recording portion and a data unrecorded portion. The source video recording and reproducing device performs error correction with respect to the error recording portion and generates a non-recording control pulse with respect to the data unrecorded portion. The reproduced data and the non-recording control pulse is transmitted to a target video recording and reproducing device. The target video recording and reproducing device records, in a target recording tape, the reproduced data except data transmitted during an interval of the non-recording control pulse.

    Abstract translation: 一种用于在视频记录和再现装置中复制记录带的方法和装置。 源视频记录和再现装置响应于来自用户的转录要求再现源记录带的数据，并确认错误记录部分和数据未记录部分。 源视频记录和再现装置相对于错误记录部分执行纠错，并产生相对于数据未记录部分的非记录控制脉冲。 再现数据和非记录控制脉冲被发送到目标视频记录和再现装置。 目标视频记录和再现装置在目标记录磁带中记录除了在非记录控制脉冲的间隔期间发送的数据之外的再现数据。

    Semiconductor memory device having storage node electrodes offset from each other
    123.
    发明授权
    Semiconductor memory device having storage node electrodes offset from each other 有权
    具有彼此偏移的存储节点电极的半导体存储器件

    公开(公告)号：US06381165B1

    公开(公告)日：2002-04-30

    申请号：US09966785

    申请日：2001-09-28

    Applicant: Jung-hyeon Lee ,  Han-ku Cho

    Inventor： Jung-hyeon Lee ,  Han-ku Cho

    IPC: G11C502

    CPC classification number: H01L27/10808 ,  G11C5/025 ,  H01L27/0207

    Abstract: A semiconductor memory device that is capable of reducing the probability of a bridge being generated between storage node electrodes, and a mask pattern for defining the storage node electrodes, are provided. The semiconductor memory device includes a plurality of storage node electrodes that are vertically and horizontally arranged a predetermined distance apart in columns and rows, respectively. Among the plurality of storage node electrodes, storage node electrodes belonging to even-numbered columns are shifted up or down a predetermined distance. The shifted storage node electrodes are shifted in a gap between vertically adjacent storage node electrodes belonging to a same column.

    Abstract translation: 提供了能够降低在存储节点电极之间产生桥的可能性的半导体存储器件，以及用于限定存储节点电极的掩模图案。 半导体存储器件包括分别沿列和行分别垂直和水平布置成预定距离的多个存储节点电极。 在多个存储节点电极中，属于偶数列的存储节点电极向上或向下移动预定距离。 偏移的存储节点电极在属于同一列的垂直相邻的存储节点电极之间的间隙中偏移。

    Phase transition memories and transistors
    125.
    发明授权
    Phase transition memories and transistors 有权
    相变存储器和晶体管

    公开(公告)号：US08987701B2

    公开(公告)日：2015-03-24

    申请号：US13322379

    申请日：2010-05-28

    Applicant: Sandip Tiwari ,  Ravishankar Sundararaman ,  Sang Hyeon Lee ,  Moonkyung Kim

    Inventor： Sandip Tiwari ,  Ravishankar Sundararaman ,  Sang Hyeon Lee ,  Moonkyung Kim

    IPC: H01L47/00 ,  H01L29/68 ,  H01L29/51

    CPC classification number: H01L29/685 ,  H01L29/51 ,  H01L29/513 ,  H01L29/517

    Abstract: In one embodiment there is set forth a method comprising providing a semiconductor structure having an electrode, wherein the providing includes providing a phase transition material region and wherein the method further includes imparting energy to the phase transition material region to induce a phase transition of the phase transition material region. By inducing a phase transition of the phase transition material region, a state of the semiconductor structure can be changed. There is further set forth an apparatus comprising a structure including an electrode and a phase transition material region, wherein the apparatus is operative for imparting energy to the phase transition material region to induce a phase transition of the phase transition material region without the phase transition of the phase transition material region being dependent on electron transport through the phase transition material region.

    Abstract translation: 在一个实施例中，提出了一种方法，包括提供具有电极的半导体结构，其中所述提供包括提供相变材料区域，并且其中所述方法还包括赋予相变材料区域能量以引起相位的相变 过渡材料区域。 通过引起相变材料区域的相变，可以改变半导体结构的状态。 还提出了一种装置，其包括包括电极和相变材料区域的结构，其中该装置可操作以将能量传递给相变材料区域，以引起相变材料区域的相变而不发生相变 相变材料区域依赖于通过相变材料区域的电子传输。

    ACTIVE ROBOTIC GAIT-TRAINING SYSTEM AND METHOD
    128.
    发明申请
    ACTIVE ROBOTIC GAIT-TRAINING SYSTEM AND METHOD 有权
    主动机器人训练系统及方法

    公开(公告)号：US20140094345A1

    公开(公告)日：2014-04-03

    申请号：US14007340

    申请日：2012-04-09

    Applicant: Young Ho Kim ,  Sung Jae Hwang ,  Jong Sang Son ,  Jung Yoon Kim ,  Sun Woo Park ,  Je Seong Ryu ,  Min Hyeon Lee

    Inventor： Young Ho Kim ,  Sung Jae Hwang ,  Jong Sang Son ,  Jung Yoon Kim ,  Sun Woo Park ,  Je Seong Ryu ,  Min Hyeon Lee

    IPC: A61H1/02 ,  A63B71/00 ,  A63B22/02

    CPC classification number: A61H1/0255 ,  A61H1/0262 ,  A61H2201/10 ,  A61H2201/163 ,  A61H2201/1642 ,  A61H2201/5069 ,  A61N1/36003 ,  A61N1/36014 ,  A63B21/00178 ,  A63B21/00181 ,  A63B21/4009 ,  A63B21/4011 ,  A63B22/0235 ,  A63B69/0064 ,  A63B71/0009 ,  A63B2022/0094 ,  A63B2213/004 ,  A63B2220/16

    Abstract: The present invention relates to active robotic gait training system and method which enables more active gait training based on remaining gait ability of patients with gait disorders by estimating the gait cycle through measurement of slope of the lower leg, operating the hip joint and the knee joint by an actuator depending on the gait cycle and operating the ankle joint by functional electric stimulation (FES).The robotic gait training system contains the femoral support unit, the hip joint support unit and the lower leg support unit. Also, The robotic gait training system has further comprising: a support fixing toe tip, located on the lower part of the lower leg support unit and fixed the strap connecting to the toe tip pad wrapping the toe tip (forefoot); a tilt sensor, installed on the lower part of lower leg support unit or on one side of the toe tip pad; the control unit generated FES control signal, hip joint angle control signal and knee joint angle control signal by using slope signal received from the tilt sensor; a first linear actuator operation unit, received the hip joint angle control signal from the control unit and operates the first linear actuator to rotate the femoral support unit based on the hip joint angle control signal in the hip joint unit that is the coupling unit between the femoral support unit and the hip joint support unit; a second linear actuator operation unit, received the knee joint angle control signal from the control unit and operates the second linear actuator to rotate the lower leg support unit based on the knee joint angle control signal in the knee joint unit that is the coupling unit between the lower leg support unit and the femoral support unit.

    Abstract translation: 本发明涉及一种主动式步态训练系统及方法，其基于通过测量小腿斜坡，操作髋关节和膝关节估计步态周期，基于步态障碍患者的步态能力进行更主动的步态训练 通过执行器取决于步态循环，并通过功能性电刺激（FES）操作踝关节。 机器人步态训练系统包括股骨支撑单元，髋关节支撑单元和小腿支撑单元。 此外，机器人步态训练系统还包括：支撑固定脚尖，位于小腿支撑单元的下部，并固定连接到包围脚趾尖（脚前）的趾尖垫的带; 倾斜传感器，安装在小腿支撑单元的下部或趾尖垫的一侧; 控制单元通过使用从倾斜传感器接收的倾斜信号产生FES控制信号，髋关节角度控制信号和膝关节角度控制信号; 第一线性致动器操作单元，从控制单元接收髋关节角度控制信号，并且操作第一线性致动器以基于髋关节角度控制信号旋转股骨支撑单元，所述髋关节角度控制信号是作为 股骨支撑单元和髋关节支撑单元; 第二线性致动器操作单元，从所述控制单元接收所述膝关节角度控制信号，并且操作所述第二线性致动器以基于所述膝关节角度控制信号来旋转所述小腿支撑单元，所述膝关节角度控制信号是作为所述膝关节单元之间的联接单元， 小腿支撑单元和股骨支撑单元。

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