中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

226 records (took 0.052 seconds)

    Compositions and methods for the treatment of tumor
    122.
    发明申请
    Compositions and methods for the treatment of tumor 审中-公开
    用于治疗肿瘤的组合物和方法

    公开(公告)号：US20050176104A1

    公开(公告)日：2005-08-11

    申请号：US11052503

    申请日：2005-02-04

    Applicant: Audrey Goddard ,  Paul Godowski ,  Austin Gurney ,  James Pan ,  Margaret Roy ,  William Wood

    Inventor： Audrey Goddard ,  Paul Godowski ,  Austin Gurney ,  James Pan ,  Margaret Roy ,  William Wood

    IPC: A61K39/395 ,  C07H21/04 ,  C07K14/82 ,  C07K16/30 ,  C07K16/40 ,  C12N5/06 ,  C12N5/16 ,  C12N15/00 ,  C12P21/02 ,  C12P21/04

    CPC classification number: C07K16/30

    Abstract: The invention concerns compositions and methods for the diagnosis and treatment of neoplastic cell growth and proliferation in mammals, including humans. The invention is based upon the identification of genes that are amplified in the genome of tumor cells. Such gene amplification is expected to be associated with the overexpression of the gene product as compared to normal cells of the same tissue type and contribute to tumorigenesis. Accordingly, the proteins encoded by the amplified genes are believed to be useful targets for the diagnosis and/or treatment (including prevention) of certain cancers, and may act as predictors of the prognosis of tumor treatment. The present invention is directed to novel polypeptides and to nucleic acid molecules encoding those polypeptides. Also provided herein are vectors and host cells comprising those nucleic acid sequences, chimeric polypeptide molecules comprising the polypeptides of the present invention fused to heterologous polypeptide sequences, antibodies which bind to the polypeptides of the present invention and to methods for producing the polypeptides of the present invention.

    Abstract translation: 本发明涉及用于诊断和治疗哺乳动物包括人类的肿瘤细胞生长和增殖的组合物和方法。 本发明基于在肿瘤细胞基因组中扩增的基因的鉴定。 预期这种基因扩增与相同组织类型的正常细胞相比，与基因产物的过表达有关，并且有助于肿瘤发生。 因此，由扩增的基因编码的蛋白质被认为是某些癌症的诊断和/或治疗（包括预防）的有用靶标，并且可以作为肿瘤治疗预后的预测因子。 本发明涉及新型多肽和编码那些多肽的核酸分子。 本文还提供了包含那些核酸序列的载体和宿主细胞，包含与异源多肽序列融合的本发明的多肽的嵌合多肽分子，与本发明的多肽结合的抗体以及本发明的多肽的制备方法 发明。

    Fabrication of dual work-function metal gate structure for complementary field effect transistors
    123.
    发明授权
    Fabrication of dual work-function metal gate structure for complementary field effect transistors 有权
    用于互补场效应晶体管的双功能金属栅极结构的制造

    公开(公告)号：US06864163B1

    公开(公告)日：2005-03-08

    申请号：US10283523

    申请日：2002-10-30

    Applicant: Allen S. Yu ,  James Pan

    Inventor： Allen S. Yu ,  James Pan

    IPC: H01L21/28 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/8238 ,  H01L29/49 ,  H01L27/4763

    CPC classification number: H01L29/6659 ,  H01L21/28079 ,  H01L21/823842 ,  H01L29/495 ,  H01L29/4983 ,  H01L29/513 ,  H01L29/66545 ,  H01L29/6656

    Abstract: For fabricating dual gate structures of complementary field effect transistors, a gate material is deposited into an opening disposed over a P-well and an N-well having the complementary field effect transistors formed therein. A portion of the gate material disposed over one of the P-well or the N-well is modified to form a first gate structure, and the remaining gate material over the other one of the P-well or the N-well forms a second gate structure. The first and second gate structures form the dual gate structures of the complementary field effect transistors.

    Abstract translation: 为了制造互补场效应晶体管的双栅极结构，栅极材料沉积到设置在P阱上的开口中，并且其中形成有互补场效应晶体管的N阱。 设置在P阱或N阱中的一个上的栅极材料的一部分被修改以形成第一栅极结构，并且在P阱或N阱中的另一个上的剩余栅极材料形成第二 门结构。 第一和第二栅极结构形成互补场效应晶体管的双栅极结构。

    Method for independent measurement of mosfet source and drain resistances
    125.
    发明授权
    Method for independent measurement of mosfet source and drain resistances 失效
    用于独立测量mosfet源极和漏极电阻的方法

    公开(公告)号：US06812730B2

    公开(公告)日：2004-11-02

    申请号：US10388081

    申请日：2003-03-13

    Applicant: James Pan

    Inventor： James Pan

    IPC: G01R3126

    CPC classification number: G01R31/2621

    Abstract: The source resistance of a MOSFET is determined by grounding the source and applying a voltage to the substrate to force a current Isub-S through the source. The gate and drain are allowed to float while the current is forced. Since no current flows between the source and drain, a voltage VDS detected at the drain is the product of the forced current Isub-S and the source resistance RS. Accordingly, the source resistance RS is determined to be the drain voltage VDS divided by the forced current Isub-S. Drain resistance RD may be measured in an analogous manner.

    Abstract translation: MOSFET的源极电阻通过将源极接地并向基板施加电压来强制电流Isub-S通过源来确定。 当电流被迫时，允许栅极和漏极浮动。 由于在源极和漏极之间没有电流流动，所以在漏极处检测到的电压VDS是强制电流Isub-S和源极电阻RS的乘积。 因此，源极电阻RS被确定为由强制电流Isub-S除以的漏极电压VDS。 可以以类似的方式测量漏极电阻RD。

    Selective deposition of amorphous silicon film seeded in a chlorine gas and a hydride gas ambient when forming a stacked capacitor with HSG
    126.
    发明授权
    Selective deposition of amorphous silicon film seeded in a chlorine gas and a hydride gas ambient when forming a stacked capacitor with HSG 失效
    在用HSG形成堆叠电容器时，选择性地沉积在氯气和氢化物气氛中的非晶硅膜

    公开(公告)号：US06146967A

    公开(公告)日：2000-11-14

    申请号：US914975

    申请日：1997-08-20

    Applicant: Randhir P. S. Thakur ,  James Pan

    Inventor： Randhir P. S. Thakur ,  James Pan

    IPC: H01L21/02 ,  H01L21/20

    CPC classification number: H01L28/84 ,  C23C16/045 ,  C23C16/24 ,  C23C16/56 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02664 ,  H01L27/10852 ,  H01L28/91 ,  H01L28/90 ,  Y10S438/964

    Abstract: A polysilicon film is formed with enhanced selectivity by flowing chlorine during the formation of the film. The chlorine acts as an etchant to insulative areas adjacent polysilicon structures on which the film is desired to be formed. Bottom electrodes for capacitors are formed using this process, followed by an anneal to create hemishperical grain (HSG) polysilicon. Multilayer capacitor containers are formed in a non-oxidizing ambient so that no oxide is formed between the layers. The structure formed is planarized to form separate containers made from doped and undoped amorphous silicon layers. Selected ones of undoped layers are seeded in a chlorine containing environment and annealed to form HSG. A dielectric layer and second electrode are formed to complete the cell capacitor.

    Abstract translation: 通过在膜的形成期间流动氯，形成具有增强的选择性的多晶硅膜。 氯作为蚀刻剂，其邻近多晶硅结构的绝缘区域需要形成薄膜。 使用该方法形成用于电容器的底部电极，随后进行退火以产生半透明晶粒（HSG）多晶硅。 多层电容器容器形成在非氧化环境中，使得在层之间不形成氧化物。 所形成的结构被平坦化以形成由掺杂和未掺杂的非晶硅层制成的分离的容器。 将选定的未掺杂层接种在含氯环境中并退火以形成HSG。 形成电介质层和第二电极以完成电池电容器。

    Ultra High Speed Navigation Magnetic Satellite and Unmanned Aircraft
    127.
    发明申请
    Ultra High Speed Navigation Magnetic Satellite and Unmanned Aircraft 审中-公开
    超高速导航磁卫星和无人机

    公开(公告)号：US20160004250A1

    公开(公告)日：2016-01-07

    申请号：US14322957

    申请日：2014-07-03

    Applicant: James Pan

    Inventor： James Pan

    IPC: G05D1/00 ,  B64C39/02 ,  B64C17/00 ,  B64G1/10

    CPC classification number: B64G1/10 ,  B64G1/244 ,  B64G1/32 ,  B64G1/409

    Abstract: The present invention is about a new satellite or unmanned aircraft guided by earth's magnetic fields, instead of gravitational fields, as in the case of traditional satellites. This type of magnetic satellites can fly many times faster than traditional satellites, and sustain a much heavier load if necessary. In order to navigate in earth's magnetic fields, the magnetic satellite needs to be heavily charged. The charges, interacting with the magnetic field, induce a magnetic force, which replaces the gravitational force as the centripetal force for circular motion.

    Abstract translation: 本发明涉及一种由地球磁场引导的新的卫星或无人驾驶飞机，而不是像传统卫星一样的重力场。 这种类型的磁卫星可以比传统卫星飞行多倍，如果需要，可以承受更重的载荷。 为了在地球磁场中导航，磁卫星需要充电。 与磁场相互作用的电荷引起磁力，其代替重力作为圆心运动的向心力。

    UCP4
    129.
    发明授权
    UCP4 有权

    公开(公告)号：US08313927B2

    公开(公告)日：2012-11-20

    申请号：US13236459

    申请日：2011-09-19

    Applicant: Sean Adams ,  James Pan ,  Alan Zhong

    Inventor： Sean Adams ,  James Pan ,  Alan Zhong

    IPC: C12P21/00 ,  C07K14/435 ,  C12N15/09

    CPC classification number: C07K14/4702 ,  A61K38/00 ,  A61K48/00 ,  C07K14/47 ,  C07K2319/00

    Abstract: The present invention is directed to a novel polypeptide, designated in the present application as “UCP4” (SEQ ID NO: 1), having homology to certain human uncoupling proteins (“UCPs”) and to nucleic acid molecules encoding those polypeptides. Also provided herein are vectors and host cells comprising those nucleic acid sequences, chimeric polypeptide molecules comprising the polypeptides of the present invention fused to heterologous polypeptide sequences, antibodies which bind to the polypeptides of the present invention, and methods for producing the polypeptides of the present invention.

    Abstract translation: 本发明涉及本申请中命名为具有与某些人解偶联蛋白（UCP）和编码那些多肽的核酸分子具有同源性的UCP4（SEQ ID NO：1））的新型多肽。 本文还提供了包含那些核酸序列的载体和宿主细胞，包含与异源多肽序列融合的本发明多肽的嵌合多肽分子，与本发明的多肽结合的抗体，以及本发明多肽的制备方法 发明。

    STRUCTURE AND METHOD FOR FORMING SHIELDED GATE TRENCH FET WITH MULTIPLE CHANNELS
    130.
    发明申请
    STRUCTURE AND METHOD FOR FORMING SHIELDED GATE TRENCH FET WITH MULTIPLE CHANNELS 有权
    用于形成具有多个通道的屏蔽栅极晶体管的结构和方法

    公开(公告)号：US20120280312A1

    公开(公告)日：2012-11-08

    申请号：US13553285

    申请日：2012-07-19

    Applicant: James Pan

    Inventor： James Pan

    IPC: H01L29/78

    CPC classification number: H01L29/7813 ,  H01L29/0623 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/66734 ,  H01L29/7831

    Abstract: In one embodiment, an apparatus can include a trench extending into a semiconductor region of a first conductivity type, an electrode disposed in the trench, and a source region of the first conductivity type abutting a sidewall of the trench. The apparatus can include a first well region of a second conductivity type disposed in the semiconductor region below the source region and abutting the sidewall of the trench lateral to the electrode where the second conductivity type is opposite the first conductivity type. The apparatus can also include a second well region of the second conductivity type disposed in the semiconductor region and abutting the sidewall of the trench, and a third well region of the first conductivity type disposed between the first well region and the second well region.

    Abstract translation: 在一个实施例中，装置可以包括延伸到第一导电类型的半导体区域中的沟槽，设置在沟槽中的电极以及与沟槽的侧壁邻接的第一导电类型的源极区域。 该装置可以包括设置在源极区域下方的半导体区域中的第二导电类型的第一阱区域，并且与第二导电类型与第一导电类型相反的电极的横向侧壁邻接沟槽的侧壁。 该装置还可以包括设置在半导体区域中并邻接沟槽的侧壁的第二导电类型的第二阱区域以及布置在第一阱区域和第二阱区域之间的第一导电类型的第三阱区域。

Patent Agency Ranking