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    DISPLAY DEVICE, SEMICONDUCTOR DEVICE, AND DRIVING METHOD THEREOF
    121.
    发明申请
    DISPLAY DEVICE, SEMICONDUCTOR DEVICE, AND DRIVING METHOD THEREOF 审中-公开
    显示装置，半导体装置及其驱动方法

    公开(公告)号：US20140077215A1

    公开(公告)日：2014-03-20

    申请号：US14085864

    申请日：2013-11-21

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Atsushi Umezaki ,  Hajime Kimura

    IPC: H01L27/12

    CPC classification number: H01L27/1225 ,  G11C19/28 ,  H01L27/124 ,  H01L29/7869

    Abstract: An object is to provide a semiconductor device with improved operation. The semiconductor device includes a first transistor, and a second transistor electrically connected to a gate of the first transistor. A first terminal of the first transistor is electrically connected to a first line. A second terminal of the first transistor is electrically connected to a second line. The gate of the first transistor is electrically connected to a first terminal or a second terminal of the second transistor.

    Abstract translation: 目的是提供具有改进操作的半导体器件。 半导体器件包括第一晶体管和电连接到第一晶体管的栅极的第二晶体管。 第一晶体管的第一端子电连接到第一线路。 第一晶体管的第二端子电连接到第二线路。 第一晶体管的栅极电连接到第二晶体管的第一端或第二端。

    SEMICONDUCTOR DEVICE
    122.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20140070880A1

    公开(公告)日：2014-03-13

    申请号：US13968593

    申请日：2013-08-16

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Atsushi Umezaki

    IPC: H01L25/00

    CPC classification number: H01L25/00 ,  G02F1/1362 ,  G09G3/3677 ,  G09G2310/0286 ,  G11C19/28 ,  H01L27/1225 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Provided is a semiconductor device in which change in characteristics of a transistor is suppressed and an output signal is changed sharply without increasing W/L of the transistor can be provided. Two transistors are connected in parallel between a wiring to which a low potential is supplied and an output terminal. When the low potential is output from the output terminal, both of the two transistors are turned on and then one of them is turned off. Thus, change in characteristics of the transistor can be suppressed and an output signal can be changed sharply without increasing W/L of the transistor.

    Abstract translation: 提供了可以提供晶体管的特性变化抑制输出信号急剧变化而不增加晶体管的W / L的半导体器件。 在提供低电位的布线和输出端子之间并联连接两个晶体管。 当从输出端子输出低电位时，两个晶体管都导通，然后其中一个截止。 因此，可以抑制晶体管的特性变化，并且输出信号可以在不增加晶体管的W / L的情况下急剧变化。

    Semiconductor device and electronic device including semiconductor device
    123.
    发明授权
    Semiconductor device and electronic device including semiconductor device 有权
    包括半导体器件的半导体器件和电子器件

    公开(公告)号：US08664981B2

    公开(公告)日：2014-03-04

    申请号：US13661165

    申请日：2012-10-26

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hajime Kimura ,  Atsushi Umezaki

    IPC: H03K3/00

    CPC classification number: G11C19/28 ,  G09G3/3614 ,  G09G3/3677 ,  G09G3/3688 ,  G09G2310/0286 ,  G09G2320/043 ,  H03K19/00369

    Abstract: It is an object to suppress deterioration in characteristics of a transistor in a driver circuit. A driver circuit includes a first transistor, a second transistor including a gate and one of a source and a drain to which a second signal is inputted, a third transistor whose gate is electrically connected to one of a source and a drain of the first transistor and which controls whether a voltage state of an output signal is set or not by being turned on/off, and a fourth transistor whose gate is electrically connected to the other of the source and the drain of the second transistor and which controls whether a voltage state of an output signal is set or not by being turned on/off.

    Abstract translation: 本发明的目的是抑制驱动电路中的晶体管的特性劣化。 驱动器电路包括第一晶体管，第二晶体管，其包括栅极和输入第二信号的源极和漏极之一;栅极电连接到第一晶体管的源极和漏极之一的第三晶体管 并且其通过导通/关断来控制输出信号的电压状态是否被置位;以及第四晶体管，其栅极电连接到第二晶体管的源极和漏极中的另一个，并且控制电压 输出信号的状态通过开/关来设定。

    Semiconductor device and electronic appliance
    124.
    发明授权
    Semiconductor device and electronic appliance 有权
    半导体器件和电子设备

    公开(公告)号：US08624656B2

    公开(公告)日：2014-01-07

    申请号：US13921401

    申请日：2013-06-19

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Jun Koyama ,  Atsushi Umezaki

    IPC: H03L5/00

    CPC classification number: G09G3/3677 ,  G09G2310/0251 ,  G09G2310/0286 ,  G09G2310/0289 ,  G09G2330/021 ,  G11C19/00 ,  H01L27/0207 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/7869 ,  H03K17/687 ,  H03K19/0013 ,  H03K19/018557 ,  H03K19/018571

    Abstract: The amplitude voltage of a signal input to a level shifter can be increased and then output by the level shifter circuit. Specifically, the amplitude voltage of the signal input to the level shifter can be increased to be output. This decreases the amplitude voltage of a circuit (a shift register circuit, a decoder circuit, or the like) which outputs the signal input to the level shifter. Consequently, power consumption of the circuit can be reduced. Alternatively, a voltage applied to a transistor included in the circuit can be reduced. This can suppress degradation of the transistor or damage to the transistor.

    Abstract translation: 可以增加输入到电平移位器的信号的幅度电压，然后由电平移位器电路输出。 具体地，可以增加输入到电平移位器的信号的幅度电压以输出。 这降低了将输入到电平移位器的信号输出的电路（移位寄存器电路，解码器电路等）的振幅电压。 因此，可以降低电路的功耗。 或者，可以减小施加到电路中包括的晶体管的电压。 这可以抑制晶体管的劣化或对晶体管的损坏。

    Liquid Crystal Display Device and Electronic Device Including the Same
    126.
    发明申请
    Liquid Crystal Display Device and Electronic Device Including the Same 有权
    液晶显示装置及其电子装置

    公开(公告)号：US20130194526A1

    公开(公告)日：2013-08-01

    申请号：US13742662

    申请日：2013-01-16

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Atsushi Umezaki

    IPC: H01L29/786

    CPC classification number: G11C19/28 ,  G02F1/13454 ,  G02F1/136286 ,  G02F2001/13606 ,  G02F2201/124 ,  G09G3/3677 ,  G09G3/3688 ,  G09G2300/0408 ,  G09G2300/0417 ,  G09G2310/0286 ,  H01L23/528 ,  H01L27/1214 ,  H01L29/786 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A driver circuit includes first to third transistors, a first circuit, and a second circuit. In the first transistor, a first terminal is electrically connected to a second wiring, a second terminal is electrically connected to a first wiring, and a gate is electrically connected to the second circuit and a first terminal of the third transistor. In the second transistor, a first terminal is electrically connected to the first wiring, a second terminal is electrically connected to a sixth wiring, a gate is electrically connected to the first circuit and a gate of the third transistor. A second terminal of the third transistor is electrically connected to the sixth wiring. The first circuit is electrically connected to a third wiring, a fourth wiring, a fifth wiring, and the sixth wiring. The second circuit is electrically connected to the first wiring, the second wiring, and the sixth wiring.

    Abstract translation: 驱动器电路包括第一至第三晶体管，第一电路和第二电路。 在第一晶体管中，第一端子电连接到第二布线，第二端子电连接到第一布线，栅极电连接到第二电路和第三晶体管的第一端子。 在第二晶体管中，第一端子电连接到第一布线，第二端子电连接到第六布线，栅极电连接到第一电路和第三晶体管的栅极。 第三晶体管的第二端子电连接到第六布线。 第一电路电连接到第三布线，第四布线，第五布线和第六布线。 第二电路电连接到第一布线，第二布线和第六布线。

    SEMICONDUCTOR DEVICE
    127.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20130140617A1

    公开(公告)日：2013-06-06

    申请号：US13693208

    申请日：2012-12-04

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Atsushi Umezaki

    IPC: H01L27/07

    CPC classification number: H01L27/1255 ,  G09G3/3266 ,  G09G2310/0267 ,  G09G2310/0286 ,  G09G2320/043 ,  G11C19/184 ,  G11C19/28 ,  H01L27/0733 ,  H01L27/124 ,  H01L27/1251

    Abstract: A semiconductor device capable of high-speed operation. The semiconductor device includes a first transistor, a second transistor, and a capacitor. One of a source and a drain of the first transistor is supplied with a first signal. One of a source and a drain of the second transistor is supplied with a first potential. A gate of the second transistor is supplied with a second signal. A first electrode of the capacitor is electrically connected to the other of the source and the drain of the first transistor. A second electrode of the capacitor is electrically connected to the other of the source and the drain of the second transistor. In a first period, the first signal is low and the second signal is high. In a second period, the first signal is high and the second signal is either low or high.

    Abstract translation: 能够进行高速运转的半导体装置。 半导体器件包括第一晶体管，第二晶体管和电容器。 第一晶体管的源极和漏极之一被提供有第一信号。 第二晶体管的源极和漏极之一被提供有第一电位。 第二晶体管的栅极被提供有第二信号。 电容器的第一电极电连接到第一晶体管的源极和漏极中的另一个。 电容器的第二电极电连接到第二晶体管的源极和漏极中的另一个。 在第一时段中，第一信号为低，第二信号为高。 在第二时段中，第一信号为高，第二信号为低或高。

    Semiconductor device
    128.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US12183302B2

    公开(公告)日：2024-12-31

    申请号：US18200081

    申请日：2023-05-22

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Atsushi Umezaki ,  Ryo Arasawa

    IPC: G09G3/36 ,  G09G3/3266 ,  G11C19/18 ,  H01L27/12 ,  H01L49/02 ,  G09G3/34

    Abstract: It is an object to provide a semiconductor device which can supply a signal with sufficient amplitude to a scan line while power consumption is kept small. Further, it is an object to provide a semiconductor device which can suppress distortion of a signal supplied to the scan line and shorten a rising time and a falling time while power consumption is kept small. A semiconductor device which includes a plurality of pixels each including a display element and at least one first transistor and a scan line driver circuit supplying a signal for selecting the plurality of pixels to a scan line. A light-transmitting conductive layer is used for a pixel electrode layer of the display element, a gate electrode layer of the first transistor, source and drain electrode layers of the first transistor, and the scan line. The scan line driver circuit includes a second transistor and a capacitor for holding a voltage between a gate electrode layer of the second transistor and a source electrode layer of the second transistor. The source electrode of the second transistor is connected to the scan line.

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