公开(公告)号：US20150221774A1

公开(公告)日：2015-08-06

申请号：US14610336

申请日：2015-01-30

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/227 ,  H01L29/24 ,  H01L29/22

CPC classification number: H01L29/7869 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78696

Abstract: A semiconductor device with favorable electric characteristics is provided. The semiconductor device includes a first insulating layer, a second insulating layer, an oxide semiconductor layer, and first to third conductive layers. The oxide semiconductor layer includes a region in contact with the first insulating layer, the first conductive layer is connected to the oxide semiconductor layer, and the second conductive layer is connected to the oxide semiconductor layer. The second insulating layer includes a region in contact with the oxide semiconductor layer, and the third conductive layer includes a region in contact with the second insulating layer. The oxide semiconductor layer includes first to third regions. The first region and the second region are separated from each other, and the third region is located between the first region and the second region. The third region and the third conductive layer overlap with each other with the second insulating layer located therebetween. The first region and the second region include a region having a higher carbon concentration than the third region.

Abstract translation: 提供了具有良好电特性的半导体器件。 半导体器件包括第一绝缘层，第二绝缘层，氧化物半导体层和第一至第三导电层。 氧化物半导体层包括与第一绝缘层接触的区域，第一导电层连接到氧化物半导体层，第二导电层连接到氧化物半导体层。 第二绝缘层包括与氧化物半导体层接触的区域，第三导电层包括与第二绝缘层接触的区域。 氧化物半导体层包括第一至第三区域。 第一区域和第二区域彼此分离，第三区域位于第一区域和第二区域之间。 第三区域和第三导电层彼此重叠，第二绝缘层位于它们之间。 第一区域和第二区域包括具有比第三区域更高的碳浓度的区域。

公开(公告)号：US20150187878A1

公开(公告)日：2015-07-02

申请号：US14574424

申请日：2014-12-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Takashi HAMOCHI ,  Yasutaka NAKAZAWA

IPC: H01L29/10 ,  H01L27/12 ,  H01L29/45 ,  H01L29/786

CPC classification number: H01L29/78606 ,  G02F1/133345 ,  G02F1/133512 ,  G02F1/133514 ,  G02F1/13394 ,  G02F1/1368 ,  H01L27/1225 ,  H01L27/1233 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/3262 ,  H01L29/1033 ,  H01L29/45 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: To provide a semiconductor device including a transistor in which an oxide semiconductor is used and on-state current is high. In a semiconductor device including a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion, the first transistor and the second transistor have different structures. Furthermore, the first transistor and the second transistor are transistors having a top-gate structure in which conductive films serving as a gate electrode, a source electrode, and a drain electrode do not overlap. Furthermore, in an oxide semiconductor film, an impurity element is contained in a region which does not overlap with the gate electrode, the source electrode, and the drain electrode.

Abstract translation: 为了提供包括其中使用氧化物半导体的晶体管和导通电流高的半导体器件。 在包括设置在驱动电路部分中的第一晶体管和设置在像素部分中的第二晶体管的半导体器件中，第一晶体管和第二晶体管具有不同的结构。 此外，第一晶体管和第二晶体管是具有顶栅结构的晶体管，其中用作栅电极，源电极和漏电极的导电膜不重叠。 此外，在氧化物半导体膜中，在与栅电极，源电极和漏电极不重叠的区域中含有杂质元素。

公开(公告)号：US20140022479A1

公开(公告)日：2014-01-23

申请号：US13939323

申请日：2013-07-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu HOSAKA ,  Yukinori SHIMA ,  Kenichi OKAZAKI ,  Shunpei YAMAZAKI

IPC: G02F1/1368 ,  H01L27/12

CPC classification number: G02F1/1368 ,  G02F1/133345 ,  G02F1/133512 ,  G02F1/1337 ,  G02F1/13454 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1248

Abstract: The display device includes a first substrate provided with a driver circuit region that is located outside and adjacent to a pixel region and includes at least one second transistor which supplies a signal to the first transistor in each of the pixels in the pixel region, a second substrate facing the first substrate, a liquid crystal layer between the first substrate and the second substrate, a first interlayer insulating film including an inorganic insulating material over the first transistor and the second transistor, a second interlayer insulating film including an organic insulating material over the first interlayer insulating film, and a third interlayer insulating film including an inorganic insulating material over the second interlayer insulating film. The third interlayer insulating film is provided in part of an upper region of the pixel region, and has an edge portion on an inner side than the driver circuit region.

Abstract translation: 显示装置包括：第一基板，设置有位于像素区域外部并与其邻近的驱动器电路区域，并且包括至少一个第二晶体管，其向像素区域中的每个像素中的第一晶体管提供信号;第二晶体管， 面对第一衬底的衬底，第一衬底和第二衬底之间的液晶层，在第一晶体管和第二晶体管上的包括无机绝缘材料的第一层间绝缘膜，包括有机绝缘材料的第二层间绝缘膜， 第一层间绝缘膜和在第二层间绝缘膜上的包含无机绝缘材料的第三层间绝缘膜。 第三层间绝缘膜设置在像素区域的上部区域的一部分中，并且在驱动电路区域的内侧具有边缘部分。

公开(公告)号：US20250159941A1

公开(公告)日：2025-05-15

申请号：US19023764

申请日：2025-01-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA

IPC: H10D30/67 ,  H10D99/00

Abstract: The semiconductor device includes a first insulating layer, a second insulating layer, an oxide semiconductor layer, and first to third conductive layers. The first conductive layer and the second conductive layer are connected to the oxide semiconductor layer. The second insulating layer includes a region in contact with the oxide semiconductor layer, and the third conductive layer includes a region in contact with the second insulating layer. The oxide semiconductor layer includes first to third regions. The first region and the second region are separated from each other, and the third region is located between the first region and the second region. The third region and the third conductive layer overlap with each other with the second insulating layer located therebetween. The first region and the second region include a region having a higher carbon concentration than the third region.

公开(公告)号：US20250056837A1

公开(公告)日：2025-02-13

申请号：US18928429

申请日：2024-10-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Takashi HAMOCHI ,  Yasutaka NAKAZAWA

IPC: H01L29/786 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1339 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/10 ,  H01L29/45 ,  H10K59/121

Abstract: A semiconductor device comprising an oxide semiconductor film, a gate electrode, a first insulating film, a source electrode, a drain electrode, and a second insulating film is provided. Each of a top surface of the gate electrode, a top surface of the source electrode, and a top surface of the drain electrode comprises a region in contact with the second insulating film. A top surface of the first insulating film comprises a region in contact with the gate electrode and a region in contact with the second insulating film and overlapping with the oxide semiconductor film in a cross-sectional view of the oxide semiconductor film. The oxide semiconductor film comprises a region in contact with the first insulating film and a region in contact with the second insulating film and adjacent to the region in contact with the first insulating film in the cross-sectional view.

公开(公告)号：US20250040250A1

公开(公告)日：2025-01-30

申请号：US18790447

申请日：2024-07-31

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Daisuke KUROSAKI ,  Masataka NAKADA ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L29/786

Abstract: A semiconductor device including an oxide semiconductor in which on-state current is high is provided. The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. Furthermore, the first transistor and the second transistor are transistors having a top-gate structure. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. The first transistor provided in the driver circuit portion includes two gate electrodes between which the oxide semiconductor film is provided.

公开(公告)号：US20250008818A1

公开(公告)日：2025-01-02

申请号：US18711284

申请日：2022-11-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yukinori SHIMA ,  Kenichi OKAZAKI ,  Masataka NAKADA ,  Yasutaka NAKAZAWA ,  Naoto GOTO ,  Saki EGUCHI ,  Sachiko KATANIWA

IPC: H10K59/80 ,  H10K39/00 ,  H10K59/12 ,  H10K59/95

Abstract: A display apparatus with extremely high resolution is provided. A display apparatus with high display quality is provided. The display apparatus includes a first light-emitting element and a second light-emitting element over a first insulating layer, a second insulating layer, and a third insulating layer. The first light-emitting element includes a first pixel electrode and a first organic layer. The second light-emitting element includes a second pixel electrode and a second organic layer. The first insulating layer includes a groove-like region provided along a side of the first pixel electrode in a plan view. The groove-like region includes a first region overlapping with the first pixel electrode and a second region overlapping with the second pixel electrode. The first region and the second region each have a width greater than or equal to 20 nm and less than or equal to 500 nm. The second insulating layer includes a region in contact with a top surface of the first organic layer, a region in contact with a side surface of the first organic layer, and a region located below the first pixel electrode. The third insulating layer includes a region in contact with a top surface of the second organic layer, a region in contact with a side surface of the second organic layer, and a region located below the second pixel electrode.

公开(公告)号：US20250006846A1

公开(公告)日：2025-01-02

申请号：US18764643

申请日：2024-07-05

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Yukinori SHIMA ,  Shinpei MATSUDA ,  Haruyuki BABA ,  Ryunosuke HONDA

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/8234 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/778

Abstract: To improve field-effect mobility and reliability in a transistor including an oxide semiconductor film. A semiconductor device includes a transistor including an oxide semiconductor film. The transistor includes a region where the maximum value of field-effect mobility of the transistor at a gate voltage of higher than 0 V and lower than or equal to 10 V is larger than or equal to 40 and smaller than 150; a region where the threshold voltage is higher than or equal to minus 1 V and lower than or equal to 1 V; and a region where the S value is smaller than 0.3 V/decade.

公开(公告)号：US20240429287A1

公开(公告)日：2024-12-26

申请号：US18825421

申请日：2024-09-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yasuharu HOSAKA ,  Yukinori SHIMA ,  Junichi KOEZUKA ,  Kenichi OKAZAKI

IPC: H01L29/24 ,  H01L29/06 ,  H01L29/10 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786

Abstract: A novel material is provided. A composite oxide semiconductor includes a first region and a second region. The first region contains indium. The second region contains an element M (the element M is one or more of Ga, Al, Hf, Y, and Sn). The first region and the second region are arranged in a mosaic pattern. The composite oxide semiconductor further includes a third region. The element M is gallium. The first region contains indium oxide or indium zinc oxide. The second region contains gallium oxide or gallium zinc oxide. The third region contains zinc oxide.

公开(公告)号：US20240292697A1

公开(公告)日：2024-08-29

申请号：US18689899

申请日：2022-09-05

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masahiro KATAYAMA ,  Yukinori SHIMA ,  Masataka NAKADA ,  Shingo EGUCHI ,  Daiki NAKAMURA ,  Koji KUSUNOKI

IPC: H10K59/32 ,  G09G3/3233 ,  H10K59/131 ,  H10K59/38 ,  H10K59/80

CPC classification number: H10K59/32 ,  H10K59/131 ,  H10K59/38 ,  H10K59/805 ,  G09G3/3233 ,  G09G2300/0814 ,  G09G2300/0842 ,  G09G2320/0223

Abstract: A display device in which a voltage drop is inhibited adequately is provided. The display device includes a first light-emitting device including a first light-emitting layer, a first charge-generation layer over the first light-emitting layer, and a second light-emitting layer over the first charge-generation layer; a first color filter overlapping with the first light-emitting device; a second light-emitting device including a third light-emitting layer, a second charge-generation layer over the third light-emitting layer, and a fourth light-emitting layer over the second charge-generation layer; a second color filter overlapping with the second light-emitting device; a common electrode included in the first light-emitting device and the second light-emitting device; and an auxiliary wiring electrically connected to the common electrode. The auxiliary wiring includes a first wiring layer and a second wiring layer, the second wiring layer is electrically connected to the first wiring layer through a contact hole of an insulating layer, and the second wiring layer has a lattice shape in a top view.