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公开(公告)号:US20190204654A1
公开(公告)日:2019-07-04
申请号:US16325226
申请日:2017-08-02
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Kei TAKAHASHI
IPC: G02F1/1345 , H01L27/12 , H01L29/786
CPC classification number: G02F1/13452 , G02F1/13338 , G02F1/1345 , G02F1/1368 , G06F3/0412 , G06F3/044 , G09F9/00 , G09F9/30 , H01L27/1225 , H01L27/124 , H01L29/786 , H01L29/7869
Abstract: A display device with a narrow frame is provided. A display device with high visibility is provided. A display device with low power consumption is provided. A novel display device is provided.A structure having a stack structure in which a gate driver including a first transistor and a common driver including a second transistor which includes a metal oxide in its channel formation region are stacked has been conceived. Because the gate driver has a larger area than the common driver, part of the gate driver may be formed on the same plane as the common driver.
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公开(公告)号:US20190163433A1
公开(公告)日:2019-05-30
申请号:US16264731
申请日:2019-02-01
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Kensuke YOSHIZUMI , Yuichi YANAGISAWA , Kei TAKAHASHI
IPC: G06F3/14 , G06F3/147 , H01L51/00 , H01L27/146
CPC classification number: G06F3/1446 , G06F3/147 , G09G2300/023 , G09G2300/0456 , G09G2330/021 , G09G2380/02 , H01L27/14681 , H01L51/0097 , H01L2251/5338 , H04N5/64 , Y02E10/549 , Y02P70/521
Abstract: Provided is a display device or a display system capable of displaying images along a curved surface, a display device or a display system capable of displaying images seamlessly in the form of a ring, or a display device or a display system that is suitable for increasing in size. The display device includes a display panel. The display panel includes a first part and a second part and is flexible. The first part can display images. The second part can transmit visible light. The display panel is curved so that the second part and the first part overlap with each other.
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公开(公告)号:US20180277912A1
公开(公告)日:2018-09-27
申请号:US15984452
申请日:2018-05-21
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Minoru TAKAHASHI , Shunpei YAMAZAKI , Masaaki HIROKI , Kei TAKAHASHI , Junpei MOMO
IPC: H01M10/6571 , H01M10/44 , H01M10/615 , H02J7/35 , H02J7/00 , H01M10/48 , H01M10/46 , H02S10/20 , H01M10/0525 , H01M10/637 , H01M10/63 , H01M10/052
Abstract: Disclosed is a power storage unit which can safely operate over a wide temperature range. The power storage unit in a power storage device; a heater for heating the power storage device; a temperature sensor for sensing the to of the power storage device; and a control circuit configured to in charge of the power storage device when its temperature is lower than a first temperature or higher than a second temperature. The first temperature is exemplified by a temperature which allows the formation of a dendrite over a negative electrode of the power storage device, whereas the second temperature is exemplified by a temperature which causes decomposition of a passivating film formed over a surface of a negative electrode active material.
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公开(公告)号:US20180211595A1
公开(公告)日:2018-07-26
申请号:US15935184
申请日:2018-03-26
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Kei TAKAHASHI , Roh YAMAMOTO
IPC: G09G3/3233 , G06F3/044 , G06F3/041
Abstract: A semiconductor device includes first to fourth terminals, a switch circuit, and an integrating circuit. The integrating circuit includes an amplifier circuit having a (−) terminal, a first (+) terminal, and a second (+) terminal. The integrating circuit is configured to integrate an input signal of the (−) terminal using an average voltage of a voltage of the first (+) terminal and a voltage of the second (+) terminal as a reference voltage. The switch circuit is configured to electrically connect the (−) terminal to the second terminal, the first (+) terminal to the first terminal, the second (+) terminal to the third terminal the (−) terminal to the third terminal, the first (+) terminal to the second terminal, and the second (+) terminal to the fourth terminal. The present semiconductor device is used as a semiconductor device sensing a current flowing through a pixel in a display panel.
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公开(公告)号:US20180102741A1
公开(公告)日:2018-04-12
申请号:US15679203
申请日:2017-08-17
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Kei TAKAHASHI , Yoshifumi TANADA
Abstract: Power consumption of a signal processing circuit is reduced. Further, power consumption of a semiconductor device including the signal processing circuit is reduced. The signal processing circuit includes a reference voltage generation circuit, a voltage divider circuit, an operational amplifier, a bias circuit for supplying bias current to the operational amplifier, and first and second holding circuits. The first holding circuit is connected between the reference voltage generation circuit and the bias circuit. The second holding circuit is connected between the voltage divider circuit and a non-inverting input terminal of the operational amplifier. Reference voltage from the reference voltage generation circuit and reference voltage from the voltage divider circuit can be held in the first and second holding circuits, respectively, so that the reference voltage generation circuit can stop operating. Thus, power consumption of the reference voltage generation circuit can be reduced.
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公开(公告)号:US20180083074A1
公开(公告)日:2018-03-22
申请号:US15707485
申请日:2017-09-18
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Shunpei YAMAZAKI , Johan BERGQUIST , Daisuke KUBOTA , Kei TAKAHASHI
CPC classification number: H01L27/3232 , G09G2300/023 , G09G2300/046 , H01L27/3267 , H05K5/0017
Abstract: A display device that has an excellent visibility even under strong light is provided. In the display device, a first display element that reflects visible light and a second display element that emits visible light are between a first substrate and a second substrate. The display device can display an image with high visibility by operating the first display element under strong light and operating the second display element under weak light. Furthermore, a first surface of the second substrate is provided with a touch sensor, and a second surface opposite to the first surface is provided with an anti-reflection layer. Such a structure can sufficiently reduce reflection of external light on the display surface under strong light, further increasing the visibility.
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公开(公告)号:US20180053477A1
公开(公告)日:2018-02-22
申请号:US15671483
申请日:2017-08-08
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Kei TAKAHASHI
IPC: G09G3/36 , G02F1/1335 , H01L27/32 , G09G3/20 , G09G3/3233
CPC classification number: G09G3/3611 , G02F1/133514 , G09G3/2011 , G09G3/3233 , G09G3/3266 , G09G3/3648 , G09G3/3677 , G09G2300/0426 , G09G2300/046 , G09G2300/0842 , G09G2320/043 , H01L27/3211
Abstract: A display device operating at high speed is provided. The display device includes a buffer amplifier including first and second transconductance amplifiers and a buffer and pixels arranged in a matrix of x rows and y columns (x and y are integers greater than or equal to 2) and configured to express gray levels. In the first step, the offset voltage of the buffer amplifier is corrected using the second transconductance amplifier. Then, in the second step, a first analog signal corresponding to gray levels expressed by the pixels in two rows or more and x rows or less is input to one of a non-inverting input terminal and an inverting input terminal of the first transconductance amplifier, and a second analog signal corresponding to the first analog signal is output from an output terminal of the buffer.
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公开(公告)号:US20170263205A1
公开(公告)日:2017-09-14
申请号:US15447752
申请日:2017-03-02
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Kei TAKAHASHI
CPC classification number: G09G3/3688 , G06F3/041 , G09G3/3696 , G09G2310/027 , G09G2310/0286 , G09G2310/08 , G11C19/00 , H01L21/78 , H03F3/45475 , H03F3/45968 , H03F2200/421 , H03F2203/45212 , H03M1/66 , H03M1/68 , H03M1/742 , H03M1/765
Abstract: A semiconductor device in which variations are controlled is provided. The semiconductor device has a function of converting a digital signal into an analog signal, and includes a digital-analog converter circuit, an amplifier circuit, first to fourth switches, a first output terminal, a second output terminal, and a power source. The amplifier circuit is configured to perform feedback control when the first switch and the fourth switch are on and the second switch and the third switch are off. The amplifier circuit is configured to perform comparison control when the first switch and the fourth switch are off and the second switch and the third switch are on; utilizing this, variations in the digital-analog converter circuit and the amplifier circuit are controlled.
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公开(公告)号:US20170221429A1
公开(公告)日:2017-08-03
申请号:US15409834
申请日:2017-01-19
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Hidetomo KOBAYASHI , Roh YAMAMOTO , Kei TAKAHASHI
CPC classification number: G09G3/36 , G09G3/3688 , G09G2310/0291 , G09G2310/0294 , G11C27/024 , H01L27/1225 , H01L29/66969 , H01L29/78648 , H01L29/7869 , H01L29/78696
Abstract: Objects are to provide a semiconductor device with a novel structure, to provide a semiconductor device with low power consumption, and to provide a semiconductor device with a small chip area. A digital-analog converter and a frame memory are included. The frame memory includes a sample-and-hold circuit, a correction circuit, and a source follower circuit. The sample-and-hold circuit retains the analog voltage output from the digital-analog converter. The correction circuit corrects the analog voltage retained in the sample-and-hold circuit. The source-follower circuit outputs the corrected analog voltage. The sample-and-hold-circuit, the correction circuit, and the source follower circuit each comprise a first transistor. The first transistor comprises an oxide semiconductor layer in a semiconductor layer.
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公开(公告)号:US20170186371A1
公开(公告)日:2017-06-29
申请号:US15387273
申请日:2016-12-21
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Kei TAKAHASHI , Roh YAMAMOTO
IPC: G09G3/3233 , G06F3/041 , G06F3/044
CPC classification number: G09G3/3233 , G06F3/0412 , G06F3/0416 , G06F3/044 , G06F2203/04107 , G09G2300/0426 , G09G2300/0809 , G09G2300/0842
Abstract: A semiconductor device includes first to fourth terminals, a switch circuit, and an integrating circuit. The integrating circuit includes an amplifier circuit having a (−) terminal, a first (+) terminal, and a second (+) terminal. The integrating circuit is configured to integrate an input signal of the (−) terminal using an average voltage of a voltage of the first (+) terminal and a voltage of the second (+) terminal as a reference voltage. The switch circuit is configured to electrically connect the (−) terminal to the second terminal, the first (+) terminal to the first terminal, the second (+) terminal to the third terminal the (−) terminal to the third terminal, the first (+) terminal to the second terminal, and the second (+) terminal to the fourth terminal. The present semiconductor device is used as a semiconductor device sensing a current flowing through a pixel in a display panel.
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