公开(公告)号：US07915656B2

公开(公告)日：2011-03-29

申请号：US12446964

申请日：2007-10-22

申请人： Takumi Mikawa ,  Takeshi Takagi

发明人： Takumi Mikawa ,  Takeshi Takagi

IPC分类号： H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119 ,  H01L21/20

CPC分类号： H01L27/101 ,  H01L27/24

摘要： A nonvolatile semiconductor memory apparatus (10) of the present invention comprises a semiconductor substrate (11), an active element forming region provided on the semiconductor substrate (11) and including a plurality of active elements (12), a wire forming region which is provided on the active element forming region to electrically connect the active elements (12) and includes plural layers of semiconductor electrode wires (15, 16), a memory portion forming region (100) which is provided above the wire forming region and provided with memory portions (26) arranged in matrix, a resistance value of each of the memory portions changing according to electric pulses applied, and an oxygen barrier layer (17) which is provided between the memory portion forming region (100) and the wire forming region so as to extend continuously over at least an entire of the memory portion forming region (100).

摘要翻译： 本发明的非易失性半导体存储器件（10）包括半导体衬底（11），设置在半导体衬底（11）上并包括多个有源元件（12）的有源元件形成区域， 设置在有源元件形成区域上以电连接有源元件（12）并且包括多层半导体电极线（15,16），存储部形成区域（100），其设置在线形成区域的上方并设置有存储器 布置成矩阵的部分（26），每个存储部分的电阻值根据施加的电脉冲而变化，以及设置在存储部分形成区域（100）和线形成区域之间的氧阻挡层（17），从而 以在至少整个存储部分形成区域（100）上连续地延伸。

公开(公告)号：US20100321982A1

公开(公告)日：2010-12-23

申请号：US12867392

申请日：2009-12-16

申请人： Takeshi Takagi ,  Shunsaku Muraoka ,  Ryotaro Azuma ,  Kunitoshi Aono

发明人： Takeshi Takagi ,  Shunsaku Muraoka ,  Ryotaro Azuma ,  Kunitoshi Aono

IPC分类号： G11C11/00 ,  G11C7/00

CPC分类号： H01L27/101 ,  G11C13/0002 ,  G11C13/0069 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/77 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1675

摘要： To provide a nonvolatile storage device (100) which is capable of achieving stable operation and includes variable resistance elements. The nonvolatile storage device (100) includes: memory cells (M111, M112, . . . ) each of which is provided at three-dimensional cross-points between word lines (WL0, WL1, . . . ) and bit lines (BL0, BL1, . . . ) and having a resistance value that reversibly changes based on an electrical signal; a row selection circuit-and-driver (103) provided with transistors (103a) each of which applies a predetermined voltage to a corresponding one of the word lines (WL0, WL1, . . . ); a column selection circuit-and-driver (104) provided with transistors (104a) each of which applies a predetermined voltage to a corresponding one of the bit lines (BL0, BL1, . . . ); and a substrate bias circuit (110) which applies a forward bias voltage to a substrate of such transistors (103a and 104a).

摘要翻译： 提供能够实现稳定操作并且包括可变电阻元件的非易失性存储装置（100）。 非易失性存储装置（100）包括：存储单元（M111，M112 ...），每个存储单元设置在字线（WL0，WL1 ...）与位线（BL0， BL1，...），并且具有基于电信号可逆地改变的电阻值; 具有晶体管（103a）的行选择电路驱动器（103），每个晶体管将预定电压施加到对应的一个字线（WL0，WL1 ...）; 具有晶体管（104a）的列选择电路驱动器（104），每个晶体管将预定电压施加到相应的位线（BL0，BL1 ...）中; 以及向这种晶体管（103a和104a）的衬底施加正向偏置电压的衬底偏置电路（110）。

公开(公告)号：US20100288650A1

公开(公告)日：2010-11-18

申请号：US12450775

申请日：2008-04-15

申请人： Tatsuo Kamata ,  Takeshi Takagi ,  Yuki Ito

发明人： Tatsuo Kamata ,  Takeshi Takagi ,  Yuki Ito

IPC分类号： G01N27/27

CPC分类号： C12Q1/001 ,  A61B5/14532 ,  A61B5/1486 ,  A61B5/1495 ,  A61B2560/0223

摘要： This invention provides a substrate concentration measuring method for measuring a concentration of a substrate included in a specimen based on an output for measurement from an enzyme electrode when the enzyme electrode and the substrate are reacted with each other, the substrate concentration is calculated using an output for correction from the enzyme electrode obtained when a reference solution whose substrate concentration is known and the enzyme electrode are reacted with each other before or after the enzyme electrode and the substrate are reacted with each other. For example, the output for correction is measured by each specimen. In this method, the substrate concentration may be calculated using the output for correction for the specimen to be measured and an output for correction corresponding to the at least one other specimen and measured prior to the output for correction.

摘要翻译： 本发明提供一种基板浓度测量方法，用于当酶电极和基板彼此反应时，基于酶电极的测量输出测量样品中包含的基板的浓度，基板浓度使用输出 用于当酶底物浓度已知的参比溶液和酶电极在酶电极和底物之间彼此反应之前彼此反应的酶电极获得的酶电极校正。 例如，用于校正的输出由每个样本测量。 在该方法中，可以使用待测试样本的校正输出和与至少一个其他样本相对应的校正输出并在校正输出之前测量来计算衬底浓度。

公开(公告)号：US20100200852A1

公开(公告)日：2010-08-12

申请号：US12709148

申请日：2010-02-19

申请人： Yoshio Kawashima ,  Takeshi Takagi ,  Takumi Mikawa ,  Zhiqiang Wei

发明人： Yoshio Kawashima ,  Takeshi Takagi ,  Takumi Mikawa ,  Zhiqiang Wei

IPC分类号： H01L29/68 ,  H01L21/34

CPC分类号： H01L27/101 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1658 ,  H01L45/1675

摘要： A lower electrode layer 2, an upper electrode layer 4 formed above the lower electrode layer 2, and a metal oxide thin film layer 3 formed between the lower electrode layer 2 and the upper electrode layer 4 are provided. The metal oxide thin film layer 3 includes a first region 3a whose value of resistance increases or decreases by an electric pulse that is applied between the lower electrode layer 2 and the upper electrode layer 4 and a second region 3b arranged around the first region 3a and having a larger content of oxygen than the first region 3a, wherein the lower and upper electrode layers 2 and 4 and at least a part of the first region 3a are arranged so as to overlap as viewed from the direction of the thickness of the first region 3a.

摘要翻译： 设置下电极层2，形成在下电极层2上的上电极层4和形成在下电极层2和上电极层4之间的金属氧化物薄膜层3。 金属氧化物薄膜层3包括第一区域3a，其第一区域3a的电阻值通过施加在下电极层2和上电极层4之间的电脉冲和围绕第一区域3a布置的第二区域3b而增大或减小，以及 具有比第一区域3a更大的氧含量，其中下电极层2和上电极层4以及第一区域3a的至少一部分从第一区域的厚度方向观察而重叠 3a。

公开(公告)号：US20100190313A1

公开(公告)日：2010-07-29

申请号：US12669812

申请日：2009-05-07

申请人： Yoshio Kawashima ,  Takumi Mikawa ,  Takeshi Takagi ,  Koji Arita

发明人： Yoshio Kawashima ,  Takumi Mikawa ,  Takeshi Takagi ,  Koji Arita

IPC分类号： H01L21/8246

CPC分类号： H01L45/04 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1675

摘要： A method for manufacturing a nonvolatile storage element that minimizes shape shift between an upper electrode and a lower electrode, and which includes: depositing, in sequence, a connecting electrode layer which is conductive, a lower electrode layer and a variable resistance layer which are made of a non-noble metal nitride and are conductive, an upper electrode layer made of noble metal, and a mask layer; forming the mask layer, into a predetermined shape; forming the upper electrode layer, the variable resistance layer, and the lower electrode layer into the predetermined shape by etching using the mask layer as a mask; and removing, simultaneously, the mask and a region of the connecting electrode layer that has been exposed by the etching.

摘要翻译： 一种用于制造使上部电极和下部电极之间的形状偏移最小化的非易失性存储元件的方法，包括：依次沉积导电的连接电极层，下部电极层和可变电阻层 的非贵金属氮化物，并且是导电的，由贵金属制成的上电极层和掩模层; 形成掩模层，形成预定的形状; 通过使用掩模层作为掩模通过蚀刻将上电极层，可变电阻层和下电极层形成为预定形状; 并且同时去除已经通过蚀刻暴露的掩模和连接电极层的区域。

公开(公告)号：US20090174519A1

公开(公告)日：2009-07-09

申请号：US12295500

申请日：2007-03-27

申请人： Takumi Mikawa ,  Takeshi Takagi

发明人： Takumi Mikawa ,  Takeshi Takagi

IPC分类号： H01C7/10

CPC分类号： H01L27/101 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/124 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1691

摘要： A nonvolatile memory element comprising: a first electrode 2; a second electrode 6 formed above the first electrode 2; a variable resistance film 4 formed between the first electrode 2 and the second electrode 6, a resistance value of the variable resistance film 4 being increased or decreased by an electric pulse applied between the first and second electrodes 2, 6; and an interlayer dielectric film 3 provided between the first and second electrodes 2, 6, wherein the interlayer dielectric film 3 is provided with an opening extending from a surface thereof to the first electrode 2; the variable resistance film 4 is formed at an inner wall face of the opening; and an interior region of the opening which is defined by the variable resistance film 4 is filled with an embedded insulating film 5.

摘要翻译： 一种非易失性存储元件，包括：第一电极2; 形成在第一电极2上方的第二电极6; 形成在第一电极2和第二电极6之间的可变电阻膜4，通过施加在第一和第二电极2,6之间的电脉冲，可变电阻膜4的电阻值增加或减小; 以及设置在第一和第二电极2,6之间的层间绝缘膜3，其中层间绝缘膜3设置有从其表面延伸到第一电极2的开口; 可变电阻膜4形成在开口的内壁面上; 并且由可变电阻膜4限定的开口的内部区域填充有嵌入绝缘膜5。

公开(公告)号：US20090067188A1

公开(公告)日：2009-03-12

申请号：US12242134

申请日：2008-09-30

申请人： Sugio Wako ,  Atsushi Koyama ,  Hiroshi Matsuura ,  Takeshi Takagi ,  Satoru Abe ,  Akira Fujisaki

发明人： Sugio Wako ,  Atsushi Koyama ,  Hiroshi Matsuura ,  Takeshi Takagi ,  Satoru Abe ,  Akira Fujisaki

IPC分类号： G01S1/00

CPC分类号： H01S3/09415 ,  G02B6/264 ,  G02B6/29358 ,  G02B6/29362 ,  G02B6/29398 ,  G02B6/4213 ,  G02B6/4215 ,  H01S3/06708 ,  H01S3/06712 ,  H01S3/08022 ,  H01S3/1028 ,  H01S3/109 ,  H01S3/1618

摘要： A first optical waveguide guides a pumping light emitted from a semiconductor laser. A second optical waveguide absorbs the pumping light and emits a spontaneous emission light having a wavelength longer than that of the pumping light. A third optical waveguide guides a light output from the second optical waveguide to outside. A wavelength selecting element is provided between the second optical waveguide and the third optical waveguide, across which a resonator is formed between the semiconductor laser side and an output side to outside. A wavelength of a laser light emitted from the resonator is set by controlling length of the second optical waveguide.

摘要翻译： 第一光波导引导从半导体激光器发射的泵浦光。 第二光波导吸收泵浦光并发射具有比泵浦光的波长更长的波长的自发发射光。 第三光波导将从第二光波导的光输出引导到外部。 波长选择元件设置在第二光波导和第三光波导之间，在半导体激光器侧和输出侧至外部之间形成谐振器。 通过控制第二光波导的长度来设定从谐振器发射的激光的波长。

公开(公告)号：US07392598B2

公开(公告)日：2008-07-01

申请号：US11629464

申请日：2005-06-14

申请人： Takeshi Takagi ,  Minoru Koyama ,  Mitsuyoshi Nakatani

发明人： Takeshi Takagi ,  Minoru Koyama ,  Mitsuyoshi Nakatani

IPC分类号： G01B5/14

CPC分类号： F16D3/2245 ,  F16D3/223 ,  F16D2250/00 ,  G01B5/02

摘要： A method and a device for measuring the dimensions of a constant velocity joint. In the method, for example, the cylindrical part of an outer member with a specified offset value is supported on the support part of a dimension measuring device for the outer member. On the other hand, a holding bar is inserted into a recessed part formed in the shaft part of the outer member. In this case, balls installed at the tip of the support part are inserted into the ball grooves of the cylindrical part. In this state, a rotating member is rotated to bring a probe into contact with the inside wall of the cylindrical part. The measurement core of a micro gauge is displaced according to the displacement of the probe, and the amount of the displacement thereof is displayed as the amount of the variation of the needle of the micro gauge.

摘要翻译： 一种用于测量等速万向节尺寸的方法和装置。 在该方法中，例如，具有特定偏移值的外部构件的圆筒部被支撑在用于外部构件的尺寸测量装置的支撑部上。 另一方面，将保持杆插入形成在外部构件的轴部中的凹部中。 在这种情况下，安装在支撑部分的尖端处的球被插入圆柱形部分的球槽中。 在这种状态下，旋转构件被旋转以使探针与圆筒形部分的内壁接触。 微量计的测量芯根据探针的位移而移位，其位移量显示为微量计针的变化量。

公开(公告)号：US20070227238A1

公开(公告)日：2007-10-04

申请号：US11629464

申请日：2005-06-14

申请人： Takeshi Takagi ,  Minoru Koyama ,  Mitsuyoshi Nakatani

发明人： Takeshi Takagi ,  Minoru Koyama ,  Mitsuyoshi Nakatani

IPC分类号： G01M15/02

CPC分类号： F16D3/2245 ,  F16D3/223 ,  F16D2250/00 ,  G01B5/02

摘要： A method and a device for measuring the dimensions of a constant velocity joint. In the method, for example, the cylindrical part of an outer member with a specified offset value is supported on the support part of a dimension measuring device for the outer member. On the other hand, a holding bar is inserted into a recessed part formed in the shaft part of the outer member. In this case, balls installed at the tip of the support part are inserted into the ball grooves of the cylindrical part. In this state, a rotating member is rotated to bring a probe into contact with the inside wall of the cylindrical part. The measurement core of a micro gauge is displaced according to the displacement of the probe, and the amount of the displacement thereof is displayed as the amount of the variation of the needle of the micro gauge.

摘要翻译： 一种用于测量等速万向节尺寸的方法和装置。 在该方法中，例如，具有特定偏移值的外部构件的圆筒部被支撑在用于外部构件的尺寸测量装置的支撑部上。 另一方面，将保持杆插入形成在外部构件的轴部中的凹部中。 在这种情况下，安装在支撑部分的尖端处的球被插入圆柱形部分的球槽中。 在这种状态下，旋转构件被旋转以使探针与圆筒形部分的内壁接触。 微量计的测量芯根据探针的位移而移位，其位移量显示为微量计针的变化量。

公开(公告)号：US07205586B2

公开(公告)日：2007-04-17

申请号：US10851073

申请日：2004-05-24

申请人： Takeshi Takagi ,  Akira Inoue

发明人： Takeshi Takagi ,  Akira Inoue

IPC分类号： H01L31/072

CPC分类号： H01L29/1054 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/161 ,  H01L29/165 ,  H01L29/7782 ,  H01L29/783 ,  H01L29/78615 ,  H01L29/78648 ,  H01L29/78687

摘要： A HDTMOS includes a Si substrate, a buried oxide film and a semiconductor layer. The semiconductor layer includes an upper Si film, an epitaxially grown Si buffer layer, an epitaxially grown SiGe film, and an epitaxially grown Si film. Furthermore, the HDTMOS includes an n-type high concentration Si body region, an n− Si region, a SiGe channel region containing n-type low concentration impurities, an n-type low concentration Si cap layer, and a contact which is a conductor member for electrically connecting the gate electrode and the Si body region. The present invention extends the operation range while keeping the threshold voltage small by using, for the channel layer, a material having a smaller potential at the band edge where carriers travel than that of a material constituting the body region.

摘要翻译： HDTMOS包括Si衬底，掩埋氧化物膜和半导体层。 半导体层包括上硅膜，外延生长的Si缓冲层，外延生长的SiGe膜和外延生长的Si膜。 此外，HDTMOS包括n型高浓度Si体区域，n + Si区域，含有n型低浓度杂质的SiGe沟道区域，n型低浓度Si覆盖层， 以及作为用于电连接栅电极和Si体区的导体构件的接触。 本发明通过在沟道层使用载流子行进的带边缘处的电位较小的材料，而不是构成体区的材料的情况下，使阈值电压保持较小。