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227 条记录 (耗时 0.029 秒)

    Airbag apparatus
    121.
    发明授权
    Airbag apparatus 失效
    气囊装置

    公开(公告)号：US06340174B1

    公开(公告)日：2002-01-22

    申请号：US09603346

    申请日：2000-06-26

    申请人： Takeshi Takagi ,  Toshihiro Ishikawa

    发明人： Takeshi Takagi ,  Toshihiro Ishikawa

    IPC分类号： B60R2126

    CPC分类号： B60R21/2346 ,  B60R21/2171 ,  B60R21/26 ,  B60R21/261 ,  B60R2021/26058 ,  B60R2021/26094

    摘要： A rectifying plate (53) is inserted between gas outlets of a first inflator (51a) and/or a second inflator (51b) and a diffuser (55), and is formed with a plurality of openings which have different areas and uniform gas flows released from the gas outlets, and the opening area corresponding to the inactive second inflator (51b) of the first and second inflators (51a, 51b) is larger than the opening area corresponding to the active first inflator (51a).

    摘要翻译： 整流板（53）插入在第一充气机（51a）和/或第二充气机（51b）和扩散器（55）的气体出口之间，并且形成有多个具有不同区域和均匀气流的开口 并且与第一和第二充气器（51a，51b）的不活动的第二充气器（51b）相对应的开口面积大于对应于活动的第一充气器（51a）的开口面积。

    Air bag system as a supplementary restraint system to seat belt apparatus
    122.
    发明授权
    Air bag system as a supplementary restraint system to seat belt apparatus 失效
    气囊系统作为安全带装置的补充约束系统

    公开(公告)号：US06198997B1

    公开(公告)日：2001-03-06

    申请号：US09159593

    申请日：1998-09-24

    申请人： Toshihiro Ishikawa ,  Yutaka Tsukiji ,  Takeshi Takagi

    发明人： Toshihiro Ishikawa ,  Yutaka Tsukiji ,  Takeshi Takagi

    IPC分类号： B60R2200

    CPC分类号： B60R21/0132 ,  B60R21/0154 ,  B60R21/01546 ,  B60R2021/01313 ,  B60R2021/01322

    摘要： An air bag system comprises a crash detector for detecting a crash of the vehicle, an inflator for generating pressurized gas in response to a detection of a crush, and an air bag located in front of a seat for which is inflated and expanded with the pressurized gas to a predetermined inflated configuration. A control unit controls actuation of the inflator in accordance with driving conditions and whether or not the passenger is fastened by the seat belt. Threshold values are provided such that the inflator provides high and low levels of gas pressure with which the air bag is inflated and expanded.

    摘要翻译： 气囊系统包括用于检测车辆碰撞的碰撞检测器，用于响应于挤压的检测而产生加压气体的充气机，以及位于座椅前方的气囊，所述气囊用加压 气体到预定的膨胀构型。 控制单元根据驾驶条件控制充气机的动作，以及乘客是否被安全带固定。 提供阈值，使得充气机提供高和低水平的气压，气囊膨胀和膨胀。

    Semiconductor luminous element and superlattice structure
    126.
    发明授权
    Semiconductor luminous element and superlattice structure 失效
    半导体发光元件和超晶格结构

    公开(公告)号：US5289486A

    公开(公告)日：1994-02-22

    申请号：US55799

    申请日：1993-04-29

    申请人： Kenichi Iga ,  Fumio Koyama ,  Takeshi Takagi

    发明人： Kenichi Iga ,  Fumio Koyama ,  Takeshi Takagi

    IPC分类号： H01L33/06 ,  H01S5/20 ,  H01S5/343 ,  H01S3/19

    CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01S5/34326 ,  H01S5/2013 ,  Y10S977/761

    摘要： A semiconductor luminous element has cladding layers on both sides of its active layer; and it has a multi-quantum barrier layer which is in contact with the active layer on at least a portion of at least one of the cladding layers. This multi-quantum barrier layer is formed of an alternating stack of superlattice barrier layers and superlattice well layers. The energy gap of the well layers is smaller than that of the active layer, and the quantized energy gap of the multi-quantum barrier layer is larger than the energy gap of the active layer. A superlattice structure for semiconductor devices, which confines electrons and holes, is formed out of the active layer and a cladding layer provided on at least one side of that active layer. A multi-quantum barrier layer is in contact with the active layer on at least a portion of the cladding layer. This multi-quantum barrier layer is formed of an alternating stack of superlattice barrier layers and superlattice well layers. The energy gap of the well layers is smaller than that of the active layer, and the quantized energy gap of the multi-quantum barrier layer is larger than the energy gap of the active layer.

    摘要翻译： 半导体发光元件在其有源层的两侧具有覆层; 并且其具有与至少一个包覆层的至少一部分上的有源层接触的多量子势垒层。 该多量子势垒层由超晶格势垒层和超晶格阱层的交替叠层形成。 阱层的能隙小于活性层的能隙，多量子势垒层的量子化能隙大于有源层的能隙。 限制电子和空穴的半导体器件的超晶格结构由有源层形成，并且在该有源层的至少一个侧面上形成包覆层。 多量子势垒层与包层的至少一部分上的有源层接触。 该多量子势垒层由超晶格势垒层和超晶格阱层的交替叠层形成。 阱层的能隙小于活性层的能隙，多量子势垒层的量子化能隙大于有源层的能隙。

    Variable resistance element and method of manufacturing the same
    130.
    发明授权
    Variable resistance element and method of manufacturing the same 有权
    可变电阻元件及其制造方法

    公开(公告)号：US09006698B2

    公开(公告)日：2015-04-14

    申请号：US13810708

    申请日：2012-01-18

    申请人： Zhiqiang Wei ,  Takeshi Takagi ,  Satoru Mitani ,  Yoshio Kawashima ,  Ichirou Takahashi

    发明人： Zhiqiang Wei ,  Takeshi Takagi ,  Satoru Mitani ,  Yoshio Kawashima ,  Ichirou Takahashi

    IPC分类号： H01L47/00 ,  H01L21/20 ,  H01L45/00

    CPC分类号： H01L45/1253 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1625 ,  H01L45/1675

    摘要： A variable resistance element including: a first electrode; a second electrode; and a variable resistance layer having a resistance value which reversibly changes according to electrical signals applied, wherein the variable resistance layer includes a first variable resistance layer comprising a first oxygen-deficient transition metal oxide, and a second variable resistance layer comprising a second transition metal oxide having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the first oxygen-deficient transition metal oxide, the second electrode has a single needle-shaped part at an interface with the second variable resistance layer, and the second variable resistance layer is interposed between the first variable resistance layer and the second electrode, is in contact with the first variable resistance layer and the second electrode, and covers the single needle-shaped part.

    摘要翻译： 一种可变电阻元件，包括：第一电极; 第二电极; 以及可变电阻层，其具有根据施加的电信号可逆地改变的电阻值，其中所述可变电阻层包括包含第一氧缺乏过渡金属氧化物的第一可变电阻层和包含第二过渡金属的第二可变电阻层 具有低于第一缺氧过渡金属氧化物缺氧程度的氧缺乏的氧化物，第二电极在与第二可变电阻层的界面处具有单个针状部分，第二可变电阻层 插入在第一可变电阻层和第二电极之间，与第一可变电阻层和第二电极接触，并且覆盖单个针状部分。