公开(公告)号：US07741677B2

公开(公告)日：2010-06-22

申请号：US12486944

申请日：2009-06-18

申请人： Satoshi Sakai ,  Atsushi Hiraiwa ,  Satoshi Yamamoto

发明人： Satoshi Sakai ,  Atsushi Hiraiwa ,  Satoshi Yamamoto

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/113

CPC分类号： H01L21/823462 ,  H01L21/82345 ,  H01L21/823842 ,  H01L21/823857 ,  H01L21/823878

摘要： After silicon oxide film (9) is formed on the surface of a semiconductor substrate (1), the silicon oxide film (9) in a region in which a gate insulation film having a small effective thickness is formed is removed using diluted HF and after that, high dielectric constant insulation film (10) is formed on the semiconductor substrate (1). Consequently, two kinds of gate insulation films, namely, a gate insulation film (12) comprised of stacked film of high dielectric constant insulation film (10) and silicon oxide film (9) and gate insulation film (11) comprised of the high dielectric constant insulation film (10) are formed on the semiconductor substrate (1).

摘要翻译： 在半导体基板（1）的表面上形成氧化硅膜（9）之后，使用稀释的HF除去形成有效厚度小的栅极绝缘膜的区域中的氧化硅膜（9） 在半导体衬底（1）上形成高介电常数绝缘膜（10）。 因此，由高介电常数绝缘膜（10）和氧化硅膜（9）构成的栅极绝缘膜（12）和栅极绝缘膜（12）构成的两种栅极绝缘膜由高介电常数 在半导体衬底（1）上形成恒定绝缘膜（10）。

公开(公告)号：US07655993B2

公开(公告)日：2010-02-02

申请号：US11738741

申请日：2007-04-23

申请人： Ryoichi Furukawa ,  Satoshi Sakai ,  Satoshi Yamamoto

发明人： Ryoichi Furukawa ,  Satoshi Sakai ,  Satoshi Yamamoto

IPC分类号： H01L21/336

CPC分类号： H01L21/28194 ,  H01L21/28079 ,  H01L21/28202 ,  H01L21/823462 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/7833

摘要： In a process of forming MISFETs that have gate insulating films that are mutually different in thickness on the same substrate, the formation of an undesirable natural oxide film at the interface between the semiconductor substrate and the gate insulating film is suppressed. A gate insulating film of MISFETs constituting an internal circuit is comprised of a silicon oxynitride film. Another gate insulating film of MISFETs constituting an I/O circuit is comprised of a laminated silicon oxynitride film and a high dielectric film. A process of forming the two types of gate insulating films on the substrate is continuously carried out in a treatment apparatus of a multi-chamber system. Accordingly, the substrate will not be exposed to air. Therefore, it is possible to suppress the inclusion of undesirable foreign matter and the formation of a natural oxide film at the interface between the substrate and the gate insulating films.

摘要翻译： 在形成具有相同基板上的厚度相互不同的栅极绝缘膜的MISFET的过程中，抑制了在半导体基板和栅极绝缘膜之间的界面处形成不期望的自然氧化膜。 构成内部电路的MISFET的栅极绝缘膜由氮氧化硅膜构成。 构成I / O电路的MISFET的另一个栅极绝缘膜由层叠的氮氧化硅膜和高介电膜构成。 在多室系统的处理装置中连续地进行在基板上形成两种栅极绝缘膜的工序。 因此，基板不会暴露在空气中。 因此，可以抑制在基板和栅极绝缘膜之间的界面处包含不需要的异物和形成自然氧化膜。

公开(公告)号：US07453630B2

公开(公告)日：2008-11-18

申请号：US11682789

申请日：2007-03-06

申请人： Satoshi Sakai ,  Shigenori Tsuruga ,  Hideo Yamakoshi ,  Shizuma Kuribayashi ,  Minoru Danno ,  Hiroshi Futami ,  Noriko Yamazaki

发明人： Satoshi Sakai ,  Shigenori Tsuruga ,  Hideo Yamakoshi ,  Shizuma Kuribayashi ,  Minoru Danno ,  Hiroshi Futami ,  Noriko Yamazaki

IPC分类号： F21V9/06 ,  G02B5/20

CPC分类号： G02B27/0006 ,  B08B7/0035 ,  B08B17/00 ,  G02B1/14

摘要： The objectives of the present invention are to prevent or inhibit the deterioration effects such as light transmission, diffraction, reflection, spectrum generation, and interference, and these combinations, and by so doing, decrease the frequency of maintenance operations such as window replacement and to reduce the costs for such operations. This invention is characterized by steps of creating a near vacuum zone with a presence of active energy to excite an oxidation reaction of carbon wherein the near vacuum zone faces the lighting surfaces of the optical system; generating negative ions or radicals in the near vacuum zone such as unstable chemical seeds containing oxygen atoms, such as OH radicals, OH ions, ozone, O2 ions, O-radicals; and removing or reducing the accumulated carbon which deposits on the lighting surface, by reacting the deposited carbon with the negative ions or radicals. More specifically, the method according to this invention is characterized by the step of supplying active energy while supplying a flow of gases containing oxygen atoms such as water gas or oxidizing gas (for example, water vapor, oxygen, hydrogen peroxide, ozone or mixtures of said gases with inactive gases (including air)) into the near vacuum zone, thereby removing or reducing the accumulated carbon which deposits on the lighting surface by exciting the oxidation reaction of the accumulated carbon with the supplied active energy.

摘要翻译： 本发明的目的是防止或抑制诸如光透射，衍射，反射，光谱产生和干扰的劣化效果，以及这些组合，并且通过这样做，降低诸如窗口更换的维护操作的频率，并且 降低此类操作的成本。 本发明的特征在于产生具有活性能量的近真空区以激发碳的氧化反应的步骤，其中近真空区面向光学系统的照明表面; 在近真空区产生负离子或自由基，例如包含氧原子的不稳定的化学种子，例如OH自由基，OH离子，臭氧，O 2离子，O-自由基; 以及通过使沉积的碳与负离子或自由基反应来除去或减少沉积在照明表面上的积累的碳。 更具体地说，根据本发明的方法的特征在于，在供给含有氧原子的气体流（例如水气或氧化气体（例如水蒸气，氧气，过氧化氢，臭氧或混合气体 所述具有惰性气体（包括空气）的气体）进入近真空区域，从而通过激发累积的碳与所提供的活性能的氧化反应去除或减少沉积在照明表面上的积聚的碳。

公开(公告)号：US20070158599A1

公开(公告)日：2007-07-12

申请号：US11682789

申请日：2007-03-06

申请人： Satoshi Sakai ,  Shigenori Tsuruga ,  Hideo Yamakoshi ,  Shizuma Kuribayashi ,  Minoru Danno ,  Hiroshi Futami ,  Noriko Yamazaki

发明人： Satoshi Sakai ,  Shigenori Tsuruga ,  Hideo Yamakoshi ,  Shizuma Kuribayashi ,  Minoru Danno ,  Hiroshi Futami ,  Noriko Yamazaki

IPC分类号： G01J3/10

CPC分类号： G02B27/0006 ,  B08B7/0035 ,  B08B17/00 ,  G02B1/14

摘要： The objectives of the present invention are to prevent or inhibit the deterioration of optical systems that determine the longevity of an optical apparatus which delivers effects such as light transmission, diffraction, reflection, spectrum generation, and interference, and these combinations, and by so doing, decrease the frequency of maintenance operations such as window replacement and to reduce the costs for such operations. This invention is characterized by steps of creating a near vacuum zone with a presence of active energy to excite an oxidation reaction of carbon wherein the near vacuum zone faces the lighting surfaces of the optical system; generating negative ions or radicals in the near vacuum zone such as unstable chemical seeds containing oxygen atoms, such as OH radicals, OH ions, ozone, O2-ions, O-radicals; and removing or reducing the accumulated carbon which deposits on the lighting surface, by reacting the deposited carbon with the negative ions or radicals. More specifically, the method according to this invention is characterized by the step of supplying active energy while supplying a flow of gases containing oxygen atoms such as water gas or oxidizing gas (for example, water vapor, oxygen, hydrogen peroxide, ozone or mixtures of said gases with inactive gases (including air)) into the near vacuum zone, thereby removing or reducing the accumulated carbon which deposits on the lighting surface by exciting the oxidation reaction of the accumulated carbon with the supplied active energy.

摘要翻译： 本发明的目的是防止或抑制光学系统的劣化，这些光学系统确定了传递诸如光透射，衍射，反射，光谱产生和干扰的效果的光学装置的寿命，以及这些组合。 ，减少窗户更换等维护操作的频率，降低这种操作的成本。 本发明的特征在于产生具有活性能量的近真空区以激发碳的氧化反应的步骤，其中近真空区面向光学系统的照明表面; 在近真空区产生负离子或自由基，例如包含氧原子的不稳定的化学种子，例如OH自由基，OH离子，臭氧，O 2，O-自由基; 以及通过使沉积的碳与负离子或自由基反应来除去或减少沉积在照明表面上的积累的碳。 更具体地说，根据本发明的方法的特征在于，在供给含有氧原子的气体流（例如水气或氧化气体（例如水蒸气，氧气，过氧化氢，臭氧或混合气体 所述具有惰性气体（包括空气）的气体）进入近真空区域，从而通过激发累积的碳与所提供的活性能的氧化反应去除或减少沉积在照明表面上的积聚的碳。

公开(公告)号：US07053007B2

公开(公告)日：2006-05-30

申请号：US11132306

申请日：2005-05-19

申请人： Yoshikazu Tanabe ,  Satoshi Sakai ,  Nobuyoshi Natsuaki

发明人： Yoshikazu Tanabe ,  Satoshi Sakai ,  Nobuyoshi Natsuaki

IPC分类号： H01L21/31

CPC分类号： H01L21/31662 ,  H01L21/02052 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3144 ,  H01L21/31658 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/67173 ,  H01L21/67213 ,  H01L21/67219 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823857 ,  H01L29/42364 ,  H01L29/518 ,  Y10S148/023 ,  Y10S148/116 ,  Y10S438/935

摘要： A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or in the vicinity of a semiconductor wafer, and forming a thin oxide film serving as a gate insulating film of an MOS transistor and having a thickness of 5 nm or below on the main surface of the semiconductor wafer at an oxide film-growing rate sufficient to ensure fidelity in formation of an oxide film and uniformity in thickness of the oxide film.

公开(公告)号：US20060090790A1

公开(公告)日：2006-05-04

申请号：US11053667

申请日：2005-02-09

申请人： Yasuyuki Kobayashi ,  Satoshi Sakai ,  Koji Satake

发明人： Yasuyuki Kobayashi ,  Satoshi Sakai ,  Koji Satake

IPC分类号： H01L31/00 ,  H01L21/00

CPC分类号： H01L31/022425 ,  H01L31/02168 ,  H01L31/022466 ,  Y02E10/50

摘要： A photoelectric conversion device is composed of a substrate, a lower electrode layer formed to cover the substrate, and a first semiconductor layer formed on the lower electrode. The lower electrode layer includes a first matrix formed of transparent conductive material, and light scattering granules embedded within the first matrix.

摘要翻译： 光电转换装置由基板，形成为覆盖基板的下电极层和形成在下电极上的第一半导体层构成。 下电极层包括由透明导电材料形成的第一矩阵和嵌入在第一基体内的光散射颗粒。

公开(公告)号：US20060089738A1

公开(公告)日：2006-04-27

申请号：US10971124

申请日：2004-10-25

申请人： Satoshi Sakai ,  Masanobu Ishii

发明人： Satoshi Sakai ,  Masanobu Ishii

IPC分类号： G06F19/00

CPC分类号： G06K9/525 ,  G06K9/4685

摘要： Analysis is performed on sheet metal products to determine characteristics (or feature vectors) of the sheet metal products. Multiple feature vectors can be obtained for each sheet metal product. Exemplary analyses include a first order moment and a second order moment. The characteristics can be compared with characteristics of other sheet metal part shapes to determine how similar the shapes are.

摘要翻译： 对钣金产品进行分析以确定钣金产品的特征（或特征向量）。 可以为每个钣金产品获得多个特征向量。 示例性分析包括第一阶矩和第二阶矩。 这些特性可以与其他钣金零件形状的特性进行比较，以确定形状的相似度。

公开(公告)号：US20060079989A1

公开(公告)日：2006-04-13

申请号：US10959153

申请日：2004-10-07

申请人： Masanobu Ishii ,  Satoshi Sakai ,  Thanapandi Periasamy

发明人： Masanobu Ishii ,  Satoshi Sakai ,  Thanapandi Periasamy

IPC分类号： G06F19/00

CPC分类号： G06F17/50 ,  G05B2219/31001 ,  G05B2219/31215 ,  G05B2219/35005 ,  G06F2217/42 ,  Y02P90/24 ,  Y02P90/265 ,  Y10S706/919

摘要： Data for a 3D sheet metal part model is stored in a file. The stored data includes features of the part and manufacturing information. When different manufacturing processes are used, different geometry can be created. The file can store multiple processes for manufacturing the part and the geometry associated with each process. Thus, when manufacturing the part, the user can view information for multiple stored processes because all of the information is stored together. In addition, both 2D and 3D data is stored for the part.

摘要翻译： 3D钣金零件模型的数据存储在一个文件中。 存储的数据包括部件的特征和制造信息。 当使用不同的制造工艺时，可以创建不同的几何形状。 该文件可以存储用于制造零件的多个过程和与每个过程相关联的几何。 因此，当制造部件时，由于所有信息都被一起存储，用户可以查看多个存储处理的信息。 此外，2D和3D数据都存储在零件中。

公开(公告)号：US06962881B2

公开(公告)日：2005-11-08

申请号：US10774589

申请日：2004-02-10

申请人： Yoshikazu Tanabe ,  Satoshi Sakai ,  Nobuyoshi Natsuaki

发明人： Yoshikazu Tanabe ,  Satoshi Sakai ,  Nobuyoshi Natsuaki

IPC分类号： H01L21/00 ,  H01L21/28 ,  H01L21/306 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/336 ,  H01L21/469 ,  H01L21/76 ,  H01L21/8238 ,  H01L29/423 ,  H01L29/51

CPC分类号： H01L21/31662 ,  H01L21/02052 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3144 ,  H01L21/31658 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/67173 ,  H01L21/67213 ,  H01L21/67219 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823857 ,  H01L29/42364 ,  H01L29/518 ,  Y10S148/023 ,  Y10S148/116 ,  Y10S438/935

摘要： A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or in the vicinity of a semiconductor wafer, and forming a thin oxide film serving as a gate insulating film of an MOS transistor and having a thickness of 5 nm or below on the main surface of the semiconductor wafer at an oxide film-growing rate sufficient to ensure fidelity in formation of an oxide film and uniformity in thickness of the oxide film.

公开(公告)号：US06924237B2

公开(公告)日：2005-08-02

申请号：US10281189

申请日：2002-10-28

申请人： Fumio Ootsuka ,  Satoshi Yamamoto ,  Satoshi Sakai

发明人： Fumio Ootsuka ,  Satoshi Yamamoto ,  Satoshi Sakai

IPC分类号： H01L29/78 ,  H01L21/28 ,  H01L21/285 ,  H01L21/60 ,  H01L21/768 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/8242 ,  H01L27/088 ,  H01L27/092 ,  H01L27/10 ,  H01L29/51 ,  H01L21/302

CPC分类号： H01L21/28194 ,  H01L21/28518 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76897 ,  H01L21/823857 ,  H01L27/10873 ,  H01L27/10894 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： A method is used to form a circuit to achieve a high-speed performance and a circuit to attain a high reliability on one and the same substrate, in a semiconductor integrated circuit device containing MIS transistors, in which the gate insulating film is made of a high dielectric constant insulating film. In the method, the high dielectric constant insulating film is removed on the diffusion regions of the MIS transistors in the logic region and I/O region, and silicide layers of a low resistance are formed on the surfaces of the diffusion regions. In the memory region, on the other hand, the silicide layers are not formed on the diffusion regions of the MIS transistors, and the diffusion regions are covered with the high dielectric constant insulating film, thereby preventing damage to the semiconductor substrate during forming of the spacers, silicide layers, and contact holes.

摘要翻译： 在包含MIS晶体管的半导体集成电路器件中，使用一种方法来形成用于实现高速性能的电路和在同一衬底上获得高可靠性的电路，其中栅极绝缘膜由 高介电常数绝缘膜。 在该方法中，在逻辑区域和I / O区域中的MIS晶体管的扩散区域上去除高介电常数绝缘膜，并且在扩散区域的表面上形成低电阻的硅化物层。 另一方面，在存储区域中，在MIS晶体管的扩散区域上未形成硅化物层，并且扩散区域被高介电常数绝缘膜覆盖，从而防止在形成半导体衬底期间损坏半导体衬底 间隔物，硅化物层和接触孔。