摘要:
After silicon oxide film (9) is formed on the surface of a semiconductor substrate (1), the silicon oxide film (9) in a region in which a gate insulation film having a small effective thickness is formed is removed using diluted HF and after that, high dielectric constant insulation film (10) is formed on the semiconductor substrate (1). Consequently, two kinds of gate insulation films, namely, a gate insulation film (12) comprised of stacked film of high dielectric constant insulation film (10) and silicon oxide film (9) and gate insulation film (11) comprised of the high dielectric constant insulation film (10) are formed on the semiconductor substrate (1).
摘要:
In a process of forming MISFETs that have gate insulating films that are mutually different in thickness on the same substrate, the formation of an undesirable natural oxide film at the interface between the semiconductor substrate and the gate insulating film is suppressed. A gate insulating film of MISFETs constituting an internal circuit is comprised of a silicon oxynitride film. Another gate insulating film of MISFETs constituting an I/O circuit is comprised of a laminated silicon oxynitride film and a high dielectric film. A process of forming the two types of gate insulating films on the substrate is continuously carried out in a treatment apparatus of a multi-chamber system. Accordingly, the substrate will not be exposed to air. Therefore, it is possible to suppress the inclusion of undesirable foreign matter and the formation of a natural oxide film at the interface between the substrate and the gate insulating films.
摘要:
The objectives of the present invention are to prevent or inhibit the deterioration effects such as light transmission, diffraction, reflection, spectrum generation, and interference, and these combinations, and by so doing, decrease the frequency of maintenance operations such as window replacement and to reduce the costs for such operations. This invention is characterized by steps of creating a near vacuum zone with a presence of active energy to excite an oxidation reaction of carbon wherein the near vacuum zone faces the lighting surfaces of the optical system; generating negative ions or radicals in the near vacuum zone such as unstable chemical seeds containing oxygen atoms, such as OH radicals, OH ions, ozone, O2 ions, O-radicals; and removing or reducing the accumulated carbon which deposits on the lighting surface, by reacting the deposited carbon with the negative ions or radicals. More specifically, the method according to this invention is characterized by the step of supplying active energy while supplying a flow of gases containing oxygen atoms such as water gas or oxidizing gas (for example, water vapor, oxygen, hydrogen peroxide, ozone or mixtures of said gases with inactive gases (including air)) into the near vacuum zone, thereby removing or reducing the accumulated carbon which deposits on the lighting surface by exciting the oxidation reaction of the accumulated carbon with the supplied active energy.
摘要:
The objectives of the present invention are to prevent or inhibit the deterioration of optical systems that determine the longevity of an optical apparatus which delivers effects such as light transmission, diffraction, reflection, spectrum generation, and interference, and these combinations, and by so doing, decrease the frequency of maintenance operations such as window replacement and to reduce the costs for such operations. This invention is characterized by steps of creating a near vacuum zone with a presence of active energy to excite an oxidation reaction of carbon wherein the near vacuum zone faces the lighting surfaces of the optical system; generating negative ions or radicals in the near vacuum zone such as unstable chemical seeds containing oxygen atoms, such as OH radicals, OH ions, ozone, O2-ions, O-radicals; and removing or reducing the accumulated carbon which deposits on the lighting surface, by reacting the deposited carbon with the negative ions or radicals. More specifically, the method according to this invention is characterized by the step of supplying active energy while supplying a flow of gases containing oxygen atoms such as water gas or oxidizing gas (for example, water vapor, oxygen, hydrogen peroxide, ozone or mixtures of said gases with inactive gases (including air)) into the near vacuum zone, thereby removing or reducing the accumulated carbon which deposits on the lighting surface by exciting the oxidation reaction of the accumulated carbon with the supplied active energy.
摘要:
A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or in the vicinity of a semiconductor wafer, and forming a thin oxide film serving as a gate insulating film of an MOS transistor and having a thickness of 5 nm or below on the main surface of the semiconductor wafer at an oxide film-growing rate sufficient to ensure fidelity in formation of an oxide film and uniformity in thickness of the oxide film.
摘要:
A photoelectric conversion device is composed of a substrate, a lower electrode layer formed to cover the substrate, and a first semiconductor layer formed on the lower electrode. The lower electrode layer includes a first matrix formed of transparent conductive material, and light scattering granules embedded within the first matrix.
摘要:
Analysis is performed on sheet metal products to determine characteristics (or feature vectors) of the sheet metal products. Multiple feature vectors can be obtained for each sheet metal product. Exemplary analyses include a first order moment and a second order moment. The characteristics can be compared with characteristics of other sheet metal part shapes to determine how similar the shapes are.
摘要:
Data for a 3D sheet metal part model is stored in a file. The stored data includes features of the part and manufacturing information. When different manufacturing processes are used, different geometry can be created. The file can store multiple processes for manufacturing the part and the geometry associated with each process. Thus, when manufacturing the part, the user can view information for multiple stored processes because all of the information is stored together. In addition, both 2D and 3D data is stored for the part.
摘要:
A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or in the vicinity of a semiconductor wafer, and forming a thin oxide film serving as a gate insulating film of an MOS transistor and having a thickness of 5 nm or below on the main surface of the semiconductor wafer at an oxide film-growing rate sufficient to ensure fidelity in formation of an oxide film and uniformity in thickness of the oxide film.
摘要:
A method is used to form a circuit to achieve a high-speed performance and a circuit to attain a high reliability on one and the same substrate, in a semiconductor integrated circuit device containing MIS transistors, in which the gate insulating film is made of a high dielectric constant insulating film. In the method, the high dielectric constant insulating film is removed on the diffusion regions of the MIS transistors in the logic region and I/O region, and silicide layers of a low resistance are formed on the surfaces of the diffusion regions. In the memory region, on the other hand, the silicide layers are not formed on the diffusion regions of the MIS transistors, and the diffusion regions are covered with the high dielectric constant insulating film, thereby preventing damage to the semiconductor substrate during forming of the spacers, silicide layers, and contact holes.