Electron emission device with offset control electrode
    121.
    发明授权
    Electron emission device with offset control electrode 失效
    带偏移控制电极的电子发射装置

    公开(公告)号:US5814926A

    公开(公告)日:1998-09-29

    申请号:US547879

    申请日:1995-10-25

    CPC classification number: H01J3/022

    Abstract: An electron emission device which allows provision of a larger-current, sharper, higher-resolution beam of electrons, has a offset control electrode 10 which is located, on an insulating layer 9, above a gate electrode 7 formed on a plurality of cathodes 4. Each of the centers of the openings of the control electrode 10 is offset from the centers of the openings of the gate electrode 7.

    Abstract translation: 允许提供更大电流,更清晰,更高分辨率的电子束的电子发射装置具有偏移控制电极10,该偏移控制电极10位于绝缘层9上,形成在多个阴极4上的栅极电极7上方 控制电极10的开口的每个中心偏离栅电极7的开口的中心。

    Method for producing an electrostatic lens
    122.
    发明授权
    Method for producing an electrostatic lens 失效
    静电透镜的制造方法

    公开(公告)号:US5535508A

    公开(公告)日:1996-07-16

    申请号:US457836

    申请日:1995-06-01

    CPC classification number: H01J37/12 H01J2237/1207 Y10T29/49117

    Abstract: An electrostatic lens produces a smooth potential distribution along the center axis and is reduced in lens size and in total shape.A metal layer 13 is deposited at a certain position on an inner surface of insulating cylinder 11, and a high-resistance layer 12 is deposited on a portion except for the metal layer 13 on the inner surface of cylinder 11. A negative potential is applied from an external power source 19 to the metal layer 13, and the high-resistance layer 12 is earthed.

    Abstract translation: 静电透镜沿着中心轴产生平滑的电势分布,并减小透镜尺寸和总体形状。 金属层13沉积在绝缘圆筒11的内表面的特定位置,高电阻层12沉积在气缸11的内表面上除了金属层13之外的部分上。施加负电位 从外部电源19到金属层13,高电阻层12接地。

    Electrostatic lens and method for producing the same
    124.
    发明授权
    Electrostatic lens and method for producing the same 失效
    静电透镜及其制造方法

    公开(公告)号:US5444256A

    公开(公告)日:1995-08-22

    申请号:US168160

    申请日:1993-12-17

    CPC classification number: H01J37/12 H01J2237/1207 Y10T29/49117

    Abstract: An electrostatic lens produces a smooth potential distribution along the center axis and is reduced in lens size and in total shape. A metal layer 13 is deposited at a certain position on an inner surface of insulating cylinder 11, and a high-resistance layer 12 is deposited on a portion except for the metal layer 13 on the inner surface of cylinder 11. A negative potential is applied from an external power source 19 to the metal layer 13, and the high-resistance layer 12 is earthed.

    Abstract translation: 静电透镜沿着中心轴产生平滑的电势分布,并减小透镜尺寸和总体形状。 金属层13沉积在绝缘圆筒11的内表面的特定位置,高电阻层12沉积在气缸11的内表面上除了金属层13之外的部分上。施加负电位 从外部电源19到金属层13,高电阻层12接地。

    Field emission device with integrally formed electrostatic lens
    125.
    发明授权
    Field emission device with integrally formed electrostatic lens 失效
    具有整体形成的静电透镜的场发射装置

    公开(公告)号:US5430347A

    公开(公告)日:1995-07-04

    申请号:US93134

    申请日:1993-07-16

    CPC classification number: H01J3/022 H01J9/025

    Abstract: A FED including an integrally formed electrostatic lens with an aperture having a diameter which is dis-similar from an aperture of the FED gate to effect a reduction in electron beam cross-section. By forming the FED with an electrostatic lens aperture of increased diameter relative to the diameter of the gate aperture a reduced sensitivity with respect to lens thickness and location is realized as is a relaxation of electrostatic lens fabrication constraints. Image display devices employing such integrally formed electrostatic lens systems may be provided wherein pixel cross-sections as small as two microns are realized.

    Abstract translation: FED包括一体形成的静电透镜,其具有与FED栅极的孔径不相似的直径的孔,以实现电子束横截面的减小。 通过以相对于栅极孔径的直径增加的直径的静电透镜孔形成FED,实现了相对于透镜厚度和位置的降低的灵敏度,这是静电透镜制造约束的松弛。 可以提供采用这种整体形成的静电透镜系统的图像显示装置,其中实现了小至2微米的像素横截面。

    System making it possible to control the shape of a charged particle beam
    126.
    发明授权
    System making it possible to control the shape of a charged particle beam 失效
    系统使得可以控制带电粒子束的形状

    公开(公告)号:US5336973A

    公开(公告)日:1994-08-09

    申请号:US999227

    申请日:1992-12-31

    CPC classification number: H01J3/022 H01J3/029

    Abstract: A system for controlling the shape of a charged particle beam. The particle beam is emitted from a source (58) of the said particles. Said source is associated with a collecting electrode which collects the particles. The system comprises at least one resistive zone (56) and at least two control electrodes (52, 54). The resistive zone and the control electrodes are arranged substantially at the same level as the source. The control electrodes are also placed on either side of the resistive zone and serve to polarize the latter. The electrical resistance profile of the resistive zone is chosen in such a way that it has the potential distribution so that it is possible to obtain the desired shape of the beam from the source when the control electrodes are appropriately polarized.

    Abstract translation: 一种用于控制带电粒子束形状的系统。 粒子束从所述粒子的源(58)发射。 所述源与收集颗粒的收集电极相关联。 该系统包括至少一个电阻区(56)和至少两个控制电极(52,54)。 电阻区和控制电极基本上设置在与源相同的水平。 控制电极也放置在电阻区的两侧,并用于使电极区域极化。 电阻区域的电阻分布以这样一种方式选择,使得其具有电势分布,使得当控制电极被适当地极化时,可以从源获得期望的光束形状。

    Electrostatic electron gun with integrated electron beam deflection
and/or stigmating system
    128.
    发明授权
    Electrostatic electron gun with integrated electron beam deflection and/or stigmating system 失效
    具有集成电子束偏转和/或烙印系统的静电电子枪

    公开(公告)号:US4725736A

    公开(公告)日:1988-02-16

    申请号:US895200

    申请日:1986-08-11

    Inventor: Albert V. Crewe

    CPC classification number: H01J37/3007 H01J3/027

    Abstract: An ultra-compact electrostatic electron gun includes integrated beam-modifying means for use in electron beam memory systems, electron microscopes, electron lithographic devices and the like. The gun is illustrated as comprising means forming a point source of electrons and means receiving electrons from the point source for defining an electron beam. Electrostatic lens means receives the beam and forms a beam focus. An integrated magnetic field-generating means establishes a field of magnetic flux through the electrostatic lens for modifying the position, cross-sectional shape or other characteristic of the beam. The magnetic field-generating means is adapted to receive static or dynamic control signals and is characterized by comprising means positioned axially coincident with and surrounding the electrostatic lens to effectively immerse substantially the entire lens in the beam-modifying magnetic field, whereby due to the axial coincidence of the magnetic field-generating means with the lens, a characteristic of the electron beam may be modified without the magnetic field-generating adding significantly, if at all, to the axial length of the gun.

    Abstract translation: 超小型静电电子枪包括用于电子束存储系统,电子显微镜,电子光刻设备等的集成光束修改装置。 枪被示出为包括形成电子点源的装置,以及从点源接收电子的装置,用于限定电子束。 静电透镜装置接收光束并形成光束聚焦。 集成磁场产生装置建立通过静电透镜的磁通场,用于改变光束的位置,横截面形状或其他特性。 磁场产生装置适于接收静态或动态控制信号,其特征在于包括与轴向重合并围绕静电透镜的装置,以有效地将整个透镜有效地浸入光束修正磁场中,由此由于轴向 磁场产生装置与透镜的一致性,可以改变电子束的特性,而不会对枪的轴向长度显着增加磁场产生。

    Methods and structures to produce electrostatic quadrupole fields using
closed boundaries
    129.
    发明授权
    Methods and structures to produce electrostatic quadrupole fields using closed boundaries 失效
    使用封闭边界产生静电四极场的方法和结构

    公开(公告)号:US4704532A

    公开(公告)日:1987-11-03

    申请号:US839294

    申请日:1986-03-13

    Applicant: Zhong-yi Hua

    Inventor: Zhong-yi Hua

    CPC classification number: H01J3/18 G21K1/087

    Abstract: The invention includes a method for obtaining an exact electrostatic quadrupole field by the use of simple structures having high resistance materials of uniform or continuously varied thickness to form closed boundaries. The potential of these boundaries is continuously varied with respect to position in accordance with specified design criteria. The method and structures can be used in electron optical systems and related scientific instruments.

    Abstract translation: 本发明包括通过使用具有均匀或连续变化厚度的高电阻材料的简单结构来获得精确的静电四极场的方法以形成闭合边界。 这些边界的潜力根据指定的设计标准而相对于位置而不断变化。 该方法和结构可用于电子光学系统及相关科学仪器。

    Electron-beam device and semiconductor device for use in such an
electron-beam device
    130.
    发明授权
    Electron-beam device and semiconductor device for use in such an electron-beam device 失效
    用于这种电子束装置的电子束装置和半导体装置

    公开(公告)号:US4682074A

    公开(公告)日:1987-07-21

    申请号:US793883

    申请日:1985-11-01

    CPC classification number: H01J29/481 H01J3/021

    Abstract: A device for recording or displaying images or for electron lithographic or electron microscopic uses, comprising in an evacuated envelope (1) a target (7) on which at least one electron beam (6) is focussed. This beam is generated by means of a semiconductor device (10) which comprises an electrically insulating layer (42) having an aperture (38) through which the beam passes. The layer carries at least four beam-forming electrodes (43 through 50) which are situated at regular intervals around the aperture (38). Each of the electrodes has such a potential that an n-pole field or a combination of n-pole fields is generated, where n is an even integer from 4 through 16. A suitable choice of the n-pole field will make it possible to impart substantially any desired shape to the beam (6) and thus the focus on the target.

    Abstract translation: 一种用于记录或显示图像或电子光刻或电子显微镜用途的装置,包括在真空的外壳(1)中聚焦有至少一个电子束(6)的靶(7)。 该光束通过半导体器件(10)产生,该半导体器件(10)包括具有光束通过的孔(38)的电绝缘层(42)。 该层承载至少四个波束形成电极(43至50),其围绕孔(38)以规则的间隔设置。 每个电极具有产生n极场或n极场的组合的电位,其中n是从4到16的偶数整数.n极场的适当选择将使得可以 将基本上任何期望的形状赋予梁(6),从而将焦点赋予目标。

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