Abstract:
This specification relates to a terahertz pulse generator capable of generating ultra-short terahertz pulses by use of electron beams transported through a plurality of foils. The plurality of foils in a shape of disc are arranged in an overlapped state and form a conical shape that diameters of the disc-shaped foils sequentially decrease along a direction that the electron beam is transported. Coherent radiation, which is generated as the ultra-short electron beam is transported through the foils in respective spaced gaps of the foils, is propagated toward the outside of the disc-shaped foils and gathered with forming a conical wave surface at edges of the disc-shaped foils. This may result in enhancement of generation efficiency of the terahertz waves.
Abstract:
The present invention relates to a field emission lighting arrangement, comprising an anode structure at least partly covered by a phosphor layer, an evacuated envelope inside of which an anode structure is arranged, and a field emission cathode, wherein the field emission lighting arrangement is configured to receive a drive signal for powering the field emission lighting arrangement and to sequentially activate selected portions of the phosphor layer for emitting light. The same control regime may be applied to an arrangement comprising a plurality of field emission cathodes and a single field emission anode. Advantages with the invention includes increase lifetime of the field emission lighting arrangement.
Abstract:
The present invention is intended to provide an electron-beam-pumped light source capable of irradiating one surface of a semiconductor light-emitting device uniformly with an electron beam, and capable of obtaining a high light output without increasing an accelerating voltage of the electron beam and, in addition, capable of efficiently cooling the semiconductor light-emitting device. An electron-beam-pumped light source of the present invention includes: an electron beam source and a semiconductor light-emitting device excited by an electron beam emitted from the electron beam source, and characterized in that the electron beam source includes a planar electron beam emitting portion and arranged in the periphery of the semiconductor light-emitting device, and light exits from a surface through which the electron beam from the electron beam source of the semiconductor light-emitting device enters.
Abstract:
The present invention provides a light-transmitting metal electrode including a substrate and a metal electrode layer having plural openings. The metal electrode layer also has such a continuous metal part that any pair of point-positions in the part is continuously connected without breaks. The openings in the metal electrode layer are periodically arranged to form plural microdomains. The plural microdomains are so placed that the in-plane arranging directions thereof are oriented independently of each other. The thickness of the metal electrode layer is in the range of 10 to 200 nm.
Abstract:
The present invention relates to a method for manufacturing a plurality of nanostructures comprising the steps of providing a plurality of protruding base structures (104) arranged on a surface of a first substrate (102), providing a seed layer mixture, comprising a solvent/dispersant and a seed material, in contact with the protruding base structures, providing a second substrate arranged in parallel with the first substrate adjacent to the protruding base structures, thereby enclosing a majority of the seed layer mixture between the first and second substrates, evaporating the solvent, thereby forming a seed layer (110) comprising the seed material on the protruding base structures, removing the second substrate, providing a growth mixture, comprising a growth agent, in contact with the seed layer, and controlling the temperature of the growth mixture so that nanostructures (114) are formed on the seed layer via chemical reaction in presence of the growth agent.
Abstract:
The present invention relates to afield emission cathode, comprising an at least partly electrically conductive base structure, and a plurality of electrically conductive micrometer sized sections spatially distributed at the base structure, wherein at least a portion of the plurality of micrometer sized sections each are provided with a plurality of electrically conductive nanostructures. Advantages of the invention include lower power consumption as well as an increase in light output of e.g. a field emission lighting arrangement comprising the field emission cathode.
Abstract:
A field emission light source device, comprising: cathode plate comprising substrate and cathode conductive layer disposed on surface of substrate, and anode plate comprising base formed from transparent ceramic material and anode conductive layer disposed on one surface of base, and insulating support member by which cathode plate and anode plate are integrally fixed, and vacuum-tight chamber formed with anode plate, cathode plate and insulating support member; anode conductive layer and the cathode plate are disposed opposite each other. Because of advantages of good electrical conductivity, high light transmittance, stable electron-impact resistance performance and uniform luminescence, using transparent ceramic as the base of the anode plate in the field emission light source device can increase electron beam excitation efficiency effectively, increase light extraction efficiency of the field emission light source device, and finally increase its luminous efficiency. A manufacturing method of the field emission light source device is also provided.
Abstract:
A triode type cathode structure of an FED screen arranged in rows and columns, including a first lower metallization level forming cathodes, an electrical insulating layer, a second higher metallization level forming extraction grids, openings formed in the second metallization level and in the electrical insulating layer, and lines of electron emission arranged in the openings, which lines are parallel to the direction of the rows of the screen.
Abstract:
A method for forming high density emission elements for a field emission display and field emission elements and field emission displays formed according to the method. Oxygen and a silicon etchant are introduced into a plasma etching chamber containing a silicon substrate. The oxygen reacts with the silicon surface to form regions of silicon dioxide, while the silicon etchant etches the silicon to form the emission elements. The silicon dioxide regions mask the underlying silicon during the silicon etch process. High density and high aspect ratio emission elements are formed without using photolithographic processes as practiced in the prior art. The emission elements formed according to the present invention provide a more uniform emission of electrons than the prior art techniques. Further, a display incorporating emission elements formed according to the present invention provides increased brightness. Further, the reliability of the display is increased due to the use of a plurality of emission elements to supply electrons for stimulating the phosphor substrate material to produce the image.
Abstract:
A curable organopolysiloxane composition comprises at least the following components: an organopolysiloxane (A) represented by the following general formula: R13SiO(R12SiO)mSiR13 (where R1 is a monovalent hydrocarbon group, and “m” is an integer from 0 to 100); an organopolysiloxane (B) represented by the following average unit formula: (R2SiO3/2)a(R22SiO2/2)b(R23SiO1/2)c (where R2 is a monovalent hydrocarbon group, and “a”, “b”, and “c” are specific numbers); an organopolysiloxane (C) having in one molecule on average at least two silicon-bonded aryl groups and on average at least two silicon-bonded hydrogen atoms; and a hydrosilylation-reaction catalyst (D); is characterized by good fillability and curability and that, when cured, forms a cured body that possesses a high refractive index, high light transmissivity, and strong adhesion to various substrates.