公开(公告)号：US10559451B2

公开(公告)日：2020-02-11

申请号：US15433008

申请日：2017-02-15

Applicant: Applied Materials, Inc.

Inventor： Nikolai Nikolaevich Kalnin ,  Toan Q. Tran ,  Dmitry Lubomirsky

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/455 ,  H01L21/67 ,  F16K5/12 ,  F16K51/02 ,  C23C16/50 ,  B01F15/02 ,  C23C16/52 ,  F04D27/00

Abstract: An exhaust module for a substrate processing apparatus having a body, a pumping ring, and a symmetric flow valve, is disclosed herein. The body has a first and second vacuum pump opening formed therethrough. The pumping ring is positioned in the body over both the first and second vacuum pump openings. The pumping ring includes a substantially ring shaped body having a top surface, a bottom surface, and an opening. The top surface has one or more through holes formed therein, arranged in a pattern concentric with the first vacuum pump opening. The bottom surface has a fluid passage formed therein, interconnecting each of the one or more through holes. The opening is formed in the substantially ring shaped body, substantially aligned with the vacuum pump opening. The symmetric flow valve is positioned in the body over the pumping ring and movable between a raised position and a lowered position.

公开(公告)号：US10551328B2

公开(公告)日：2020-02-04

申请号：US15817599

申请日：2017-11-20

Applicant: Applied Materials, Inc.

Inventor： Satoru Kobayashi ,  Yufei Zhu ,  Saurabh Garg ,  Soonam Park ,  Dmitry Lubomirsky

IPC: G01N22/00

Abstract: A test fixture includes an outer conductor and an inner conductor disposed within and electrically isolated from the outer conductor. The inner conductor includes a top portion having a first diameter, a bottom portion having a second diameter, and a third portion proximate the bottom portion that has a third diameter that is less than the second diameter and is greater than the first diameter. An electrical property of a chamber component disposed within the outer conductor is measurable based on application of a signal to at least one of the outer conductor or the inner conductor.

公开(公告)号：US10522371B2

公开(公告)日：2019-12-31

申请号：US15159478

申请日：2016-05-19

Applicant: Applied Materials, Inc.

Inventor： Tien Fak Tan ,  Lok Kee Loh ,  Dmitry Lubomirsky ,  Soonwook Jung ,  Martin Yue Choy ,  Soonam Park

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/3065

Abstract: Semiconductor systems and methods may include a semiconductor processing chamber having a gas box defining an access to the semiconductor processing chamber. The chamber may include a spacer characterized by a first surface with which the gas box is coupled, and the spacer may define a recessed ledge on an interior portion of the first surface. The chamber may include a support bracket seated on the recessed ledge that extends along a second surface of the spacer. The chamber may also include a gas distribution plate seated on the support bracket.

公开(公告)号：US20190323127A1

公开(公告)日：2019-10-24

申请号：US15957076

申请日：2018-04-19

Applicant: Applied Materials, Inc.

Inventor： Laksheswar Kalita ,  Soonam Park ,  Dmitry Lubomirsky

IPC: C23C18/18 ,  C23C18/32 ,  C23C18/16 ,  B32B15/01 ,  C25F3/04

Abstract: Systems and methods may be used to produce coated components. Exemplary chamber components may include an aluminum plate defining a plurality of apertures. The plate may include a nickel coating on a textured aluminum plate to provide for adhesion. Implementing the present technology, the nickel coating may be firmly affixed with or without first applying an intermediate adhesion layer. Deleterious components from the intermediate adhesion layer (if present) may not contaminate substrates as readily as a consequence of the texturing of the aluminum plate. The contamination from the intermediate adhesion layer is undesirable and may electrically compromise semiconductor devices during processing.

公开(公告)号：US10431429B2

公开(公告)日：2019-10-01

申请号：US15424488

申请日：2017-02-03

Applicant: Applied Materials, Inc.

Inventor： Satoru Kobayashi ,  Hideo Sugai ,  Nikolai Kalnin ,  Soonam Park ,  Toan Tran ,  Dmitry Lubomirsky

IPC: H01J37/32 ,  H01L21/67

Abstract: A system includes a process chamber, a housing that defines a waveguide cavity, and a first conductive plate within the housing. The first conductive plate faces the process chamber. The system also includes one or more adjustment devices that can adjust at least a position of the first conductive plate, and a second conductive plate, coupled with the housing, between the waveguide cavity and the process chamber. Electromagnetic radiation can propagate from the waveguide cavity into the process chamber through apertures in the second conductive plate. The system also includes a dielectric plate that seals off the process chamber from the waveguide cavity, and one or more electronics sets that transmit the electromagnetic radiation into the waveguide cavity. A plasma forms when at least one process gas is within the chamber, and the electromagnetic radiation propagates into the process chamber from the waveguide cavity.

公开(公告)号：US10424485B2

公开(公告)日：2019-09-24

申请号：US15173824

申请日：2016-06-06

Applicant: Applied Materials, Inc.

Inventor： Nitin K. Ingle ,  Dmitry Lubomirsky ,  Xinglong Chen ,  Shankar Venkataraman

IPC: H01L21/3065 ,  H01J37/32

Abstract: Methods of etching a patterned substrate may include flowing an oxygen-containing precursor into a first remote plasma region fluidly coupled with a substrate processing region. The oxygen-containing precursor may be flowed into the region while forming a plasma in the first remote plasma region to produce oxygen-containing plasma effluents. The methods may also include flowing a fluorine-containing precursor into a second remote plasma region fluidly coupled with the substrate processing region while forming a plasma in the second remote plasma region to produce fluorine-containing plasma effluents. The methods may include flowing the oxygen-containing plasma effluents and fluorine-containing plasma effluents into the processing region, and using the effluents to etch a patterned substrate housed in the substrate processing region.

公开(公告)号：US20190252154A1

公开(公告)日：2019-08-15

申请号：US15942051

申请日：2018-03-30

Applicant: Applied Materials, Inc.

Inventor： Mehmet Tugrul Samir ,  Dongqing Yang ,  Dmitry Lubomirsky

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/67

CPC classification number: H01J37/3244 ,  H01J2237/006 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/67069

Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold may be characterized by a first end and a second end opposite the first end, and may be coupled with the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold, and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius at a first inner sidewall and an outer radius, and the first trench may provide fluid access to the central channel through the first inner sidewall.

公开(公告)号：US10340124B2

公开(公告)日：2019-07-02

申请号：US15180425

申请日：2016-06-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Satoru Kobayashi ,  Hideo Sugai ,  Toan Tran ,  Soonam Park ,  Dmitry Lubomirsky

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32

Abstract: A rotating microwave is established for any resonant mode TEmnl or TMmnl of a cavity, where the user is free to choose the values of the mode indices m, n and l. The fast rotation, the rotation frequency of which is equal to an operational microwave frequency, is accomplished by setting the temporal phase difference ΔØ and the azimuthal angle Δθ between two microwave input ports P and Q as functions of m, n and l. The slow rotation of frequency Ωα (typically 1-1000 Hz), is established by transforming dual field inputs α cos Ωαt and ±α sin Ωαt in the orthogonal input system into an oblique system defined by the angle Δθ between two microwave ports P and Q.

公开(公告)号：US20190198291A1

公开(公告)日：2019-06-27

申请号：US16291494

申请日：2019-03-04

Applicant: Applied Materials, Inc.

Inventor： Dmitry Lubomirsky

IPC: H01J37/305 ,  H01J37/32 ,  H01J37/30 ,  H01J37/317

Abstract: Described processing chambers may include a chamber housing at least partially defining an interior region of a semiconductor processing chamber. The chamber may include a showerhead positioned within the chamber housing, and the showerhead may at least partially divide the interior region into a remote region and a processing region in which a substrate can be contained. The chamber may also include an inductively coupled plasma source positioned between the showerhead and the processing region. The inductively coupled plasma source may include a conductive material within a dielectric material.

公开(公告)号：US10170282B2

公开(公告)日：2019-01-01

申请号：US14162000

申请日：2014-01-23

Applicant: Applied Materials, Inc.

Inventor： Xinglong Chen ,  Dmitry Lubomirsky ,  Shankar Venkataraman

IPC: H01J37/32 ,  C23C16/455

Abstract: An exemplary faceplate may include a conductive plate defining a plurality of apertures. The faceplate may additionally include a plurality of inserts, and each one of the plurality of inserts may be disposed within one of the plurality of apertures. Each insert may define at least one channel through the insert to provide a flow path through the faceplate.