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公开(公告)号：US08848163B2
公开(公告)日：2014-09-30
申请号：US13050251
申请日：2011-03-17
Applicant: Hsien-Cheng Wang , Chin-Hsiang Lin , Heng-Jen Lee , Ching-Yu Chang , Hua-Tai Lin , Burn Jeng Lin
Inventor： Hsien-Cheng Wang , Chin-Hsiang Lin , Heng-Jen Lee , Ching-Yu Chang , Hua-Tai Lin , Burn Jeng Lin
CPC classification number: G03F7/0397 , G03F7/0045 , G03F7/0392 , G03F7/30 , G03F7/38 , G03F7/70858 , Y10S430/106 , Y10S430/111
Abstract: A lithography apparatus generates a tunable magnetic field to facilitate processing of photoresist. The lithography apparatus includes a chamber and a substrate stage in the chamber operable to hold a substrate. A magnetic module provides a magnetic field to the substrate on the substrate stage. The magnetic module is configured to provide the magnetic field in a tunable and alternating configuration with respect to its magnitude and frequency. The magnetic field is provided to have a gradient in magnitude along a Z-axis that is perpendicular to the substrate stage to cause magnetically-charged particles disposed over the substrate stage to move up and down along the Z-axis. The lithography apparatus also includes a radiation energy source and an objective lens configured to receive radiation energy from the radiation energy source and direct the radiation energy toward the substrate positioned on the substrate stage.
Abstract translation: 光刻设备产生可调磁场以便于光致抗蚀剂的加工。 光刻设备包括腔室和腔室中的衬底台，其可操作以保持衬底。 磁性模块为衬底台上的衬底提供磁场。 磁模块被配置为相对于其幅度和频率提供可调和交替配置的磁场。 磁场被提供为具有沿垂直于衬底台的Z轴的幅度梯度，以使得设置在衬底台上的带磁性颗粒沿Z轴上下移动。 光刻设备还包括辐射能量源和物镜，其被配置为从辐射能量源接收辐射能量并将辐射能量引向位于衬底台上的衬底。
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公开(公告)号：US08841058B2
公开(公告)日：2014-09-23
申请号：US12913191
申请日：2010-10-27
Applicant: Ching-Yu Chang
Inventor： Ching-Yu Chang
CPC classification number: G03F7/0046 , G03F7/0382 , G03F7/0392 , G03F7/2041
Abstract: A photolithography material is provided. The photolithography material is a surface modifying material. The photolithography material includes a polymer (e.g., fluorine polymer) that includes less than approximately 80% hydroxyl groups. In an embodiment, the photolithography material includes less than approximately 80% fluoro-alcohol functional units. Methods of using the photolithography material include as an additive to a photoresist or topcoat layer. The photolithography material may be used in an immersion lithography process.
Abstract translation: 提供光刻材料。 光刻材料是表面改性材料。 光刻材料包括包含小于约80％羟基的聚合物（例如氟聚合物）。 在一个实施例中，光刻材料包括少于约80％的氟 - 醇官能单元。 使用光刻材料的方法包括作为光致抗蚀剂或顶涂层的添加剂。 光刻材料可以用于浸没式光刻工艺。
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公开(公告)号：US08767178B2
公开(公告)日：2014-07-01
申请号：US13482879
申请日：2012-05-29
Applicant: Burn Jeng Lin , Ching-Yu Chang
Inventor： Burn Jeng Lin , Ching-Yu Chang
IPC: G03B27/42
CPC classification number: G03B27/52 , G03F7/70341
Abstract: Immersion lithography system and method using direction-controlling fluid inlets are described. According to one embodiment of the present disclosure, an immersion lithography apparatus includes a lens assembly having an imaging lens disposed therein and a wafer stage configured to retain a wafer beneath the lens assembly. The apparatus also includes a plurality of direction-controlling fluid inlets disposed adjacent to the lens assembly, each direction-controlling fluid inlet in the plurality of direction-controlling fluid inlets being configured to direct a flow of fluid beneath the lens assembly and being independently controllable with respect to the other fluid inlets in the plurality of direction-controlling fluid inlets.
Abstract translation: 描述了使用方向控制流体入口的浸渍光刻系统和方法。 根据本公开的一个实施例，浸没式光刻设备包括具有设置在其中的成像透镜的透镜组件和被配置为将晶片保持在透镜组件下方的晶片台。 该装置还包括多个方向控制流体入口，其邻近透镜组件设置，多个方向控制流体入口中的每个方向控制流体入口构造成将透镜流体下方的流体引导到透镜组件的下方并且可独立控制 相对于多个方向控制流体入口中的其它流体入口。
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公开(公告)号：US08753797B2
公开(公告)日：2014-06-17
申请号：US13543582
申请日：2012-07-06
Applicant: Fang Lin , Ching-Yu Chang
Inventor： Fang Lin , Ching-Yu Chang
IPC: G03F7/26
CPC classification number: G03F7/09 , G03F7/0046
Abstract: Methods and materials for making a semiconductor device are described. The method includes providing a substrate, forming a surface-modified middle layer (SM-ML) that includes a fluorine-containing material over the substrate, forming a photoresist layer over the SM-ML, exposing the photoresist layer to an exposure energy, and developing the photoresist layer.
Abstract translation: 描述制造半导体器件的方法和材料。 该方法包括提供衬底，在衬底上形成包含含氟材料的表面改性中间层（SM-ML），在SM-ML上形成光致抗蚀剂层，将光致抗蚀剂层暴露于曝光能量;以及 显影光致抗蚀剂层。
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公开(公告)号：US20140017615A1
公开(公告)日：2014-01-16
申请号：US13546125
申请日：2012-07-11
Applicant: Ching-Yu Chang
Inventor： Ching-Yu Chang
CPC classification number: G03F7/162
Abstract: An apparatus includes a chuck, a first drain cup and second drain cup with two separately drain lines connected to each drain cup. The second drain cup is integrated with the first drain cup and located on top of the first drain cup. The different based chemical wastes can be collected into the separated drain cups and furthermore into the different drain lines and waste tanks. Accordingly, different based photo resists and developers can be used at the same apparatus by adjusting the chuck position to save the coating and develop tool and clean room space and furthermore the production cost.
Abstract translation: 一种装置包括卡盘，第一排水杯和第二排水杯，其具有连接到每个排水杯的两个单独的排水管线。 第二排水杯与第一排水杯集成，并位于第一排水杯的顶部。 不同的基础化学废物可以被收集到分离的排水杯中并进一步收集到不同的排水管线和废液箱中。 因此，通过调整卡盘位置，可以在相同的装置上使用不同的基于光刻胶和显影剂，以保存涂层，并开发工具和清洁的房间空间以及生产成本。
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Patent Agency Ranking
公开(公告)号：US20130323641A1
公开(公告)日：2013-12-05
申请号：US13486697
申请日：2012-06-01
Applicant: Ching-Yu Chang
Inventor： Ching-Yu Chang
CPC classification number: G03F7/16 , G03F7/0045 , G03F7/0046 , G03F7/11
Abstract: Photosensitive materials and method of forming a pattern that include providing a composition of a component of a photosensitive material that is operable to float to a top region of a layer formed from the photosensitive material. In an example, a photosensitive layer includes a first component having a fluorine atom (e.g., alkyl fluoride group). After forming the photosensitive layer, the first component floats to a top surface of the photosensitive layer. Thereafter, the photosensitive layer is patterned.
Abstract translation: 感光材料和形成图案的方法，其包括提供可操作以漂浮到由感光材料形成的层的顶部区域的感光材料的组分的组合物。 在一个实例中，感光层包括具有氟原子的第一组分（例如，氟烷基）。 在形成感光层之后，第一部件漂浮到感光层的顶表面。 此后，对感光层进行图案化。
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公开(公告)号：US08597870B2
公开(公告)日：2013-12-03
申请号：US13525796
申请日：2012-06-18
Applicant: Ching-Yu Chang
Inventor： Ching-Yu Chang
CPC classification number: G02B1/111 , G03F7/091 , G03F7/11 , G03F7/2041 , Y10S430/111
Abstract: A coating material for use during a lithography process. In an example, a coating material disposed on a material layer includes a polymer and a quencher catcher chemically bonded to the polymer. The quencher catcher substantially neutralizes any quencher that diffuses into the coating material from the material layer.
Abstract translation: 在光刻工艺中使用的涂料。 在一个实例中，设置在材料层上的涂层材料包括聚合物和化学键合到聚合物上的淬火剂捕集器。 淬火捕集器基本上中和从材料层扩散到涂层材料中的任何猝灭剂。
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公开(公告)号：US08586290B2
公开(公告)日：2013-11-19
申请号：US12622230
申请日：2009-11-19
Applicant: Chien-Wei Wang , Ching-Yu Chang
Inventor： Chien-Wei Wang , Ching-Yu Chang
CPC classification number: G03F7/095 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/11 , G03F7/2041 , G03F7/30 , G03F7/322 , G03F7/38
Abstract: A lithography method includes forming a photosensitive layer on a substrate, exposing the photosensitive layer, baking the photosensitive layer, and developing the exposed photosensitive layer. The photosensitive layer includes a polymer that turns soluble to a base solution in response to reaction with acid, a plurality of photo-acid generators (PAGs) that decompose to form acid in response to radiation energy, and a plurality of quenchers having boiling points distributed between about 200 C and about 350 C. The quenchers also have molecular weights distributed between 300 Dalton and about 20000 Dalton, and are vertically distributed in the photosensitive layer such that a first concentration C1 at a top portion of the photosensitive layer is greater than a second concentration C2 at a bottom portion of the photosensitive layer.
Abstract translation: 光刻方法包括在基板上形成感光层，曝光感光层，烘烤感光层，以及显影曝光的感光层。 感光层包括响应于与酸的反应而变成可溶于碱溶液的聚合物，响应于辐射能而分解形成酸的多个光酸发生剂（PAG），和多个具有沸点分布的猝灭剂 约200℃至约350℃。猝灭剂还具有分布在300道尔顿和约20000道尔顿之间的分子量，并且垂直分布在感光层中，使得感光层顶部的第一浓度C1大于 在感光层的底部具有第二浓度C2。
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公开(公告)号：US08415091B2
公开(公告)日：2013-04-09
申请号：US13079942
申请日：2011-04-05
Applicant: Ching-Yu Chang
Inventor： Ching-Yu Chang
IPC: G03F7/26
CPC classification number: G03F7/2041 , G03F7/004 , G03F7/0045 , G03F7/0392
Abstract: A photoresist material having a polymer that turns soluble to a base solution in response to reaction with acid. The material includes a photo-acid generator (PAG) that decomposes to form acid in response to radiation energy and a quencher capable of neutralizing acid and having a reduced mobility. The photoresist material can thereby prevent water mark defects from immersion lithography.
Abstract translation: 一种光致抗蚀剂材料，其具有响应于与酸的反应而使其溶解于碱溶液的聚合物。 该材料包括响应于辐射能分解形成酸的光酸产生剂（PAG）和能够中和酸并具有降低迁移率的猝灭剂。 因此，光致抗蚀剂材料可以防止浸没式光刻中的水痕缺陷。
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公开(公告)号：US20120264057A1
公开(公告)日：2012-10-18
申请号：US13534961
申请日：2012-06-27
Applicant: Chien-Wei Wang , Ching-Yu Chang , Tsai-Sheng Gau , Burn Jen Lin
Inventor： Chien-Wei Wang , Ching-Yu Chang , Tsai-Sheng Gau , Burn Jen Lin
CPC classification number: G03F7/0045 , Y10S430/106 , Y10S430/114 , Y10S430/12 , Y10S430/128
Abstract: A resist material and methods using the resist material are disclosed herein. An exemplary method includes forming a resist layer over a substrate, wherein the resist layer includes a polymer, a photoacid generator, an electron acceptor, and a photodegradable base; performing an exposure process that exposes portions of the resist layer with radiation, wherein the photodegradable base is depleted in the exposed portions of the resist layer during the exposure process; and performing an developing process on the resist layer.
Abstract translation: 本文公开了抗蚀剂材料和使用抗蚀剂材料的方法。 一种示例性方法包括在衬底上形成抗蚀剂层，其中抗蚀剂层包括聚合物，光致酸产生剂，电子受体和可光降解的碱; 执行曝光处理，其用辐射曝光抗蚀剂层的一部分，其中光可降解碱在曝光过程中耗尽抗蚀剂层的曝光部分; 并对抗蚀剂层进行显影处理。
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