Integrated apparatus of substrate treatment for manufacturing of color filters by inkjet printing systems
    134.
    发明申请
    Integrated apparatus of substrate treatment for manufacturing of color filters by inkjet printing systems 审中-公开
    用于通过喷墨印刷系统制造滤色器的基板处理的集成设备

    公开(公告)号:US20060156975A1

    公开(公告)日:2006-07-20

    申请号:US11180364

    申请日:2005-07-13

    IPC分类号: B05D5/12 B05C5/00 B05B7/06

    CPC分类号: G02F1/133516 G02F1/133512

    摘要: Embodiments of the invention describe an apparatus and a method for treating a substrate of flat panel display is provided. In one embodiment, an inkjet printing system for a substrate of flat panel display comprises a chemical compound application assembly that applies chemical compound(s) on the substrate of flat panel display, a stage that supports the substrate of flat panel display and a stage positioning system that moves the stage, and an inkjet printing module that dispenses inkjet on the substrate of flat panel display. In another embodiment, a processing system for a substrate of flat panel display comprises a chemical compound application assembly that applies chemical compound(s) on the substrate of flat panel display wherein the chemical compound application assembly has a chemical compound applicator whose width substantially spans the width of the substrate of flat panel display, and a stage that supports the substrate of flat panel display and a stage positioning system that moves the stage. In another embodiment, a method of processing a substrate of flat panel display comprises depositing a layer comprising a chemical compound on the surface of a substrate of flat panel display by a chemical compound application assembly, whose width spans substantially the width of the substrate of flat panel display, of a processing system, and then inkjetting at least three colors on the substrate of flat panel display by an inkjet printing module of the processing system.

    摘要翻译: 本发明的实施例提供了一种用于处理平板显示器的基板的设备和方法。 在一个实施例中,用于平板显示器的基板的喷墨打印系统包括在平板显示器的基板上施加化学化合物的化合物施加组件,支撑平板显示器的基板的台阶和平台定位 移动台的系统以及在平板显示器的基板上分配喷墨的喷墨打印模块。 在另一个实施例中,一种用于平板显示器的基板的处理系统包括化学化合物应用组件,该化合物施用组件在平板显示器的基板上施加化学化合物,其中化合物施用组件具有化学复合施用器,其宽度基本上跨越 平板显示器的基板的宽度,以及支撑平板显示器的基板的台和使台阶移动的台架定位系统。 在另一个实施例中,一种处理平板显示器的基板的方法包括通过化学化合物施加组件在平板显示器的基板的表面上沉积包含化合物的层,其宽度基本上跨过平面的基板的宽度 面板显示器,然后通过处理系统的喷墨打印模块在平板显示器的基板上喷墨至少三种颜色。

    Method of controlling the film properties of a CVD-deposited silicon nitride film
    135.
    发明申请
    Method of controlling the film properties of a CVD-deposited silicon nitride film 审中-公开
    控制CVD沉积氮化硅膜的膜特性的方法

    公开(公告)号:US20060019502A1

    公开(公告)日:2006-01-26

    申请号:US10897775

    申请日:2004-07-23

    IPC分类号: H01L21/469 C23C16/00

    摘要: We have discovered that adding H2 to a precursor gas composition including SiH4, NH3, and N2 is effective at improving the wet etch rate and the wet etch rate uniformity across the substrate surface of a-SiNx:H films which are deposited on a substrate by PECVD. Wet etch rate is an indication of film density. Typically, the lower the wet etch rate, the denser the film. The addition of H2 to the SiH4/NH3/N2 precursor gas composition did not significantly increase the variation in deposited film thickness across the surface of the substrate. The a-SiNx:H films described herein are particularly useful as TFT gate dielectrics in the production of flat panel displays. The uniformity of the film across the substrate enables the production of flat panel displays having surface areas of 25,000 cm2 and larger.

    摘要翻译: 我们已经发现,向包含SiH 4 N,NH 3和N 2的前体气体组合物中加入H 2 N 2, 在通过PECVD沉积在衬底上的a-SiN x H:H膜的衬底表面上改善湿蚀刻速率和湿蚀刻速率均匀性是有效的。 湿蚀刻速率是膜密度的指示。 通常,湿蚀刻速率越低,膜越致密。 向SiH 4 N 3 / NH 3 / N 2 N前体气体组合物中加入H 2 O没有显着增加 衬底表面沉积膜厚度的变化。 本文所述的a-SiN x X:H膜在制造平板显示器时特别适用于TFT栅极电介质。 跨过衬底的膜的均匀性使得能够生产具有25,000cm 2以上的表面积的平板显示器。

    Method for forming color filters in flat panel displays by inkjetting
    136.
    发明申请
    Method for forming color filters in flat panel displays by inkjetting 审中-公开
    通过喷墨在平板显示器中形成滤色器的方法

    公开(公告)号:US20050253917A1

    公开(公告)日:2005-11-17

    申请号:US10845629

    申请日:2004-05-13

    摘要: A method for forming color filters for flat panel displays comprising dispensing color inks into a pre-patterned matrix using an inkjet device and curing the dispensed color inks. In one aspect, the color inks are cured in a concave configuration. In another aspect, the color inks are cured using electron beam, laser, X-ray, or other suitable high energy source.

    摘要翻译: 一种用于形成用于平板显示器的滤色器的方法,包括使用喷墨装置将彩色油墨分散到预先图案化的基质中并固化所分配的彩色油墨。 在一个方面,彩色油墨以凹形构型固化。 另一方面,彩色油墨使用电子束,激光,X射线或其他合适的高能量源固化。

    Method of controlling the uniformity of PECVD-deposited thin films
    138.
    发明申请
    Method of controlling the uniformity of PECVD-deposited thin films 审中-公开
    控制PECVD沉积薄膜均匀性的方法

    公开(公告)号:US20050233092A1

    公开(公告)日:2005-10-20

    申请号:US10962936

    申请日:2004-10-12

    摘要: We have discovered that controlling a combination of PECVD deposition process parameters during deposition of silicon-containing thin film provides improved control over surface standing wave effects. By minimizing surface standing wave effects, the uniformity of film properties (particularly film thickness) across a substrate surface onto which the films have been deposited is improved. The process parameters which have the greatest effect on surface standing wave effects include: the spacing between the upper and lower electrodes in the plasma reactor; the RF frequency of the plasma source; the amount RF power to the plasma source; the process chamber pressure; the relative concentrations of the various components in the precursor gas composition; and the precursor gas overall flow rate relative to the substrate processing volume.

    摘要翻译: 我们已经发现,在沉积含硅薄膜期间控制PECVD沉积工艺参数的组合提供了改进的对表面驻波效应的控制。 通过最小化表面驻波效应,改善了其上沉积有薄膜的基板表面上的膜性质(特别是膜厚度)的均匀性。 对表面驻波效应影响最大的工艺参数包括:等离子体反应器中上下电极之间的间距; 等离子体源的RF频率; 对等离子体源的RF功率的量; 处理室压力; 前体气体组成中各种组分的相对浓度; 和前体气体相对于基底处理体积的总流速。

    Gas diffusion shower head design for large area plasma enhanced chemical vapor deposition
    139.
    发明申请
    Gas diffusion shower head design for large area plasma enhanced chemical vapor deposition 审中-公开
    气体扩散淋浴头设计用于大面积等离子体增强化学气相沉积

    公开(公告)号:US20050223986A1

    公开(公告)日:2005-10-13

    申请号:US10823347

    申请日:2004-04-12

    摘要: Embodiments of a gas distribution plate for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. At least one of the gas passages has a right cylindrical shape for a portion of its length extending from the upstream side and a coaxial conical shape for the remainder length of the diffuser plate, the upstream end of the conical portion having substantially the same diameter as the right cylindrical portion and the downstream end of the conical portion having a larger diameter. The gas distribution plate is relatively easy to manufacture and provides good chamber cleaning rate, good thin film deposition uniformity and good thin film deposition rate. The gas distribution plate also has the advantage of reduced chamber cleaning residues on the diffuser surface and reduced incorporation of the cleaning residues in the thin film being deposited.

    摘要翻译: 提供了用于在处理室中分配气体的气体分配板的实施例。 在一个实施例中,气体分配板包括具有上游侧和下游侧的扩散板和通过扩散板的上游侧和下游侧之间的多个气体通道。 气体通道中的至少一个具有从上游侧延伸的一部分长度的右圆柱形状,并且对于扩散板的剩余长度为同轴圆锥形,锥形部分的上游端具有与 锥形部分的右圆柱形部分和下游端具有较大的直径。 气体分配板相对容易制造,提供良好的室清洁率,良好的薄膜沉积均匀性和良好的薄膜沉积速率。 气体分配板还具有减小扩散器表面上的室清洁残留物的优点,并且减少了沉积在薄膜中的清洁残余物的结合。

    DFB grating with dopant induced refractive index change
    140.
    发明申请
    DFB grating with dopant induced refractive index change 审中-公开
    DFB光栅与掺杂剂引起的折射率变化

    公开(公告)号:US20050169342A1

    公开(公告)日:2005-08-04

    申请号:US10976073

    申请日:2004-10-28

    摘要: To make a grating substructure in semiconductor material for use in a DFB laser, a first layer of semiconductor material is doped at a first doping concentration. A second layer of the semiconductor material is formed over the first layer. The second layer is doped higher concentration than the first layer and sufficiently different to change the refractive index of the semiconductor material. A third layer doped at a concentration comparable with the first layer is formed over the second layer. An etch is performed through a mask to form spaced etched regions extending at least through the second and third layers. Then a further layer of the semiconductor material doped at a doping concentration comparable the first and third layers is overgrown on the wafer. This results in a composite layer of the semiconductor material doped at a low doping concentration containing spaced islands of the semiconductor material doped with a dopant at a high doping concentration and having a different refractive index from the composite layer. The semiconductor material is preferably silicon-doped InP.

    摘要翻译: 为了在用于DFB激光器的半导体材料中制造光栅子结构,以第一掺杂浓度掺杂第一层半导体材料。 在第一层上形成半导体材料的第二层。 第二层掺杂比第一层更高的浓度,并且充分地不同以改变半导体材料的折射率。 在第二层上形成以与第一层相当的浓度掺杂的第三层。 通过掩模进行蚀刻以形成至少延伸穿过第二层和第三层的间隔的蚀刻区域。 然后,以与第一和第三层相当的掺杂浓度掺杂的另一层半导体材料在晶片上长满。 这导致以低掺杂浓度掺杂的半导体材料的复合层,其中掺杂掺杂剂的半导体材料的间隔岛以高掺杂浓度并且具有与复合层不同的折射率。 半导体材料优选是掺杂硅的InP。