摘要:
This invention relates to devices and instruments for implant insertion through a posterior lateral opening to the disc space. The instruments include an implant inserter, and the devices include a spinal fusion implant engageable by the implant inserter. The implant provides bilateral support of the adjacent vertebrae when inserted into the disc space from a postero-lateral approach.
摘要:
A method for monitoring information in a network environment is provided that includes receiving one or more packets from a communication flow initiated by an end user. The information associated with the communication flow is then selectively communicated to a plurality of client-aware network elements.
摘要:
A prosthetic system for replacement of a portion of a hip bone including a plurality of acetabular components and a plurality of flange components. The prosthetic system also includes a plurality of pubis components. Each of the pubis components and each of the flange components are operable to connect to each of the acetabular components. Each of the pubis components define a clamping portion that is configured to attach to an opposed healthy pubis bone. An angle between the flange component and the pubis component varies among the acetabular components.
摘要:
Embodiments of the invention describe an apparatus and a method for treating a substrate of flat panel display is provided. In one embodiment, an inkjet printing system for a substrate of flat panel display comprises a chemical compound application assembly that applies chemical compound(s) on the substrate of flat panel display, a stage that supports the substrate of flat panel display and a stage positioning system that moves the stage, and an inkjet printing module that dispenses inkjet on the substrate of flat panel display. In another embodiment, a processing system for a substrate of flat panel display comprises a chemical compound application assembly that applies chemical compound(s) on the substrate of flat panel display wherein the chemical compound application assembly has a chemical compound applicator whose width substantially spans the width of the substrate of flat panel display, and a stage that supports the substrate of flat panel display and a stage positioning system that moves the stage. In another embodiment, a method of processing a substrate of flat panel display comprises depositing a layer comprising a chemical compound on the surface of a substrate of flat panel display by a chemical compound application assembly, whose width spans substantially the width of the substrate of flat panel display, of a processing system, and then inkjetting at least three colors on the substrate of flat panel display by an inkjet printing module of the processing system.
摘要:
We have discovered that adding H2 to a precursor gas composition including SiH4, NH3, and N2 is effective at improving the wet etch rate and the wet etch rate uniformity across the substrate surface of a-SiNx:H films which are deposited on a substrate by PECVD. Wet etch rate is an indication of film density. Typically, the lower the wet etch rate, the denser the film. The addition of H2 to the SiH4/NH3/N2 precursor gas composition did not significantly increase the variation in deposited film thickness across the surface of the substrate. The a-SiNx:H films described herein are particularly useful as TFT gate dielectrics in the production of flat panel displays. The uniformity of the film across the substrate enables the production of flat panel displays having surface areas of 25,000 cm2 and larger.
摘要翻译:我们已经发现,向包含SiH 4 N,NH 3和N 2的前体气体组合物中加入H 2 N 2, 在通过PECVD沉积在衬底上的a-SiN x H:H膜的衬底表面上改善湿蚀刻速率和湿蚀刻速率均匀性是有效的。 湿蚀刻速率是膜密度的指示。 通常,湿蚀刻速率越低,膜越致密。 向SiH 4 N 3 / NH 3 / N 2 N前体气体组合物中加入H 2 O没有显着增加 衬底表面沉积膜厚度的变化。 本文所述的a-SiN x X:H膜在制造平板显示器时特别适用于TFT栅极电介质。 跨过衬底的膜的均匀性使得能够生产具有25,000cm 2以上的表面积的平板显示器。
摘要:
A method for forming color filters for flat panel displays comprising dispensing color inks into a pre-patterned matrix using an inkjet device and curing the dispensed color inks. In one aspect, the color inks are cured in a concave configuration. In another aspect, the color inks are cured using electron beam, laser, X-ray, or other suitable high energy source.
摘要:
We have developed a method of PECVD depositing a-SiNx:H films which are useful in a TFT device as gate dielectric and passivation layers, when a series of TFT devices are arrayed over a substrate having a surface area larger than about 1 m2, which may be in the range of about 4.1 m2, and even as large as 9 m2. The a-SiNx:H films provide a uniformity of film thickness and uniformity of film properties, including chemical composition, which are necessary over such large substrate surface areas. The films produced by the method are useful for both liquid crystal active matrix displays and for organic light emitting diode control.
摘要:
We have discovered that controlling a combination of PECVD deposition process parameters during deposition of silicon-containing thin film provides improved control over surface standing wave effects. By minimizing surface standing wave effects, the uniformity of film properties (particularly film thickness) across a substrate surface onto which the films have been deposited is improved. The process parameters which have the greatest effect on surface standing wave effects include: the spacing between the upper and lower electrodes in the plasma reactor; the RF frequency of the plasma source; the amount RF power to the plasma source; the process chamber pressure; the relative concentrations of the various components in the precursor gas composition; and the precursor gas overall flow rate relative to the substrate processing volume.
摘要:
Embodiments of a gas distribution plate for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. At least one of the gas passages has a right cylindrical shape for a portion of its length extending from the upstream side and a coaxial conical shape for the remainder length of the diffuser plate, the upstream end of the conical portion having substantially the same diameter as the right cylindrical portion and the downstream end of the conical portion having a larger diameter. The gas distribution plate is relatively easy to manufacture and provides good chamber cleaning rate, good thin film deposition uniformity and good thin film deposition rate. The gas distribution plate also has the advantage of reduced chamber cleaning residues on the diffuser surface and reduced incorporation of the cleaning residues in the thin film being deposited.
摘要:
To make a grating substructure in semiconductor material for use in a DFB laser, a first layer of semiconductor material is doped at a first doping concentration. A second layer of the semiconductor material is formed over the first layer. The second layer is doped higher concentration than the first layer and sufficiently different to change the refractive index of the semiconductor material. A third layer doped at a concentration comparable with the first layer is formed over the second layer. An etch is performed through a mask to form spaced etched regions extending at least through the second and third layers. Then a further layer of the semiconductor material doped at a doping concentration comparable the first and third layers is overgrown on the wafer. This results in a composite layer of the semiconductor material doped at a low doping concentration containing spaced islands of the semiconductor material doped with a dopant at a high doping concentration and having a different refractive index from the composite layer. The semiconductor material is preferably silicon-doped InP.