公开(公告)号：US20050233595A1

公开(公告)日：2005-10-20

申请号：US10829016

申请日：2004-04-20

申请人： Soo Choi ,  Tae Won ,  Gaku Furuta ,  Qunhua Wang ,  John White ,  Beom Park

发明人： Soo Choi ,  Tae Won ,  Gaku Furuta ,  Qunhua Wang ,  John White ,  Beom Park

IPC分类号： C23C16/34 ,  H01L21/318 ,  H01L21/336 ,  H01L21/469 ,  H01L29/49 ,  H01L29/786

CPC分类号： H01L21/0217 ,  C23C16/345 ,  H01L21/02274 ,  H01L21/3185 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78669

摘要： We have developed a method of PECVD depositing a-SiNx:H films which are useful in a TFT device as gate dielectric and passivation layers, when a series of TFT devices are arrayed over a substrate having a surface area larger than about 1 m2, which may be in the range of about 4.1 m2, and even as large as 9 m2. The a-SiNx:H films provide a uniformity of film thickness and uniformity of film properties, including chemical composition, which are necessary over such large substrate surface areas. The films produced by the method are useful for both liquid crystal active matrix displays and for organic light emitting diode control.

摘要翻译： 我们已经开发了一种PECVD沉积a-SiN＆lt; x＆gt;：H膜的方法，其可用于TFT器件作为栅极电介质和钝化层，当一系列TFT​​器件排列在具有表面的衬底上时 大于约1m 2的区域，其可以在约4.1m 2范围内，甚至大至9m 2/2。 a-SiN＆lt; x＆gt;：H膜提供了膜厚度的均匀性和膜特性的均匀性，包括在这种大的基材表面区域上必需的化学成分。 通过该方法生产的膜对于液晶有源矩阵显示器和有机发光二极管控制是有用的。

公开(公告)号：US20060236934A1

公开(公告)日：2006-10-26

申请号：US11473661

申请日：2006-06-22

申请人： Soo Choi ,  John White ,  Qunhua Wang ,  Li Hou ,  Ki Kim ,  Shinichi Kurita ,  Tae Won ,  Suhail Anwar ,  Beom Park ,  Robin Tiner

发明人： Soo Choi ,  John White ,  Qunhua Wang ,  Li Hou ,  Ki Kim ,  Shinichi Kurita ,  Tae Won ,  Suhail Anwar ,  Beom Park ,  Robin Tiner

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： H01J37/3244 ,  C23C16/345 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32596 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3325 ,  Y10T29/49885 ,  Y10T29/49996

摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

公开(公告)号：US20060228490A1

公开(公告)日：2006-10-12

申请号：US11101305

申请日：2005-04-07

申请人： Qunhua Wang ,  Li Hou ,  Sanjay Yadav ,  Gaku Furuta ,  Kenji Omori ,  Soo Choi ,  John White

发明人： Qunhua Wang ,  Li Hou ,  Sanjay Yadav ,  Gaku Furuta ,  Kenji Omori ,  Soo Choi ,  John White

IPC分类号： C23F1/00 ,  B01J19/08 ,  C23C16/00 ,  H01L21/306

CPC分类号： H01J37/3244 ,  C23C16/45565 ,  C23F4/00 ,  H01J37/32449

摘要： Embodiments of a gas distribution plate for distributing gas in a processing chamber for large area substrates are provided. The embodiments describe a gas distribution plate assembly for a plasma processing chamber having a cover plate comprises a diffuser plate having an upstream side, a downstream side facing a processing region, and a plurality of gas passages formed through the diffuser plate, and a baffle plate, placed between the cover plate of the process chamber and the diffuser plate, having a plurality of holes extending from the upper surface to the lower surface of the baffle plate, wherein the plurality of holes have at least two sizes. The small pinholes of the baffle plate are used to allow sufficient pass-through of gas mixture, while the large holes of the baffle plate are used to improve the process uniformity across the substrate.

摘要翻译： 提供了用于在大面积基板的处理室中分配气体的气体分配板的实施例。 实施方式描述了一种用于等离子体处理室的气体分配板组件，其具有盖板，该盖板包括具有上游侧，面向加工区域的下游侧和通过扩散板形成的多个气体通道的扩散板，以及挡板 ，放置在处理室的盖板和扩散板之间，具有从挡板的上表面延伸到下表面的多个孔，其中多个孔具有至少两个尺寸。 挡板的小针孔用于允许气体混合物的充分通过，而挡板的大孔用于改善基板上的工艺均匀性。

公开(公告)号：US20050251990A1

公开(公告)日：2005-11-17

申请号：US10889683

申请日：2004-07-12

申请人： Soo Young Choi ,  John White ,  Qunhua Wang ,  Li Hou ,  Ki Kim ,  Shinichi Kurita ,  Tae Won ,  Suhail Anwar ,  Beom Park ,  Robin Tiner

发明人： Soo Young Choi ,  John White ,  Qunhua Wang ,  Li Hou ,  Ki Kim ,  Shinichi Kurita ,  Tae Won ,  Suhail Anwar ,  Beom Park ,  Robin Tiner

IPC分类号： H01L21/02 ,  C23C16/00 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/505 ,  C23C16/509 ,  C23F1/00 ,  H01J37/32 ,  H01L21/205

CPC分类号： H01J37/3244 ,  C23C16/345 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32596 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3325 ,  Y10T29/49885 ,  Y10T29/49996

摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

摘要翻译： 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

公开(公告)号：US20050255257A1

公开(公告)日：2005-11-17

申请号：US11021416

申请日：2004-12-22

申请人： Soo Choi ,  John White ,  Qunhua Wang ,  Beom Park

发明人： Soo Choi ,  John White ,  Qunhua Wang ,  Beom Park

IPC分类号： C23C16/00 ,  C23C16/34 ,  C23C16/509 ,  H01J37/32 ,  H01L21/316

CPC分类号： H01J37/32082 ,  C23C16/345 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/3244 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/31612

摘要： We have discovered methods of controlling a combination of PECVD deposition process parameters during deposition of thin films which provides improved control over surface standing wave effects which affect deposited film thickness uniformity and physical property uniformity. By minimizing surface standing wave effects, the uniformity of film properties across a substrate surface onto which the films have been deposited is improved. In addition, we have developed a gas diffusion plate design which assists in the control of plasma density to be symmetrical or asymmetrical over a substrate surface during film deposition, which also provides improved control over uniformity of deposited film thickness.

摘要翻译： 我们已经发现了在沉积薄膜期间控制PECVD沉积工艺参数的组合的方法，其提供了影响沉积膜厚度均匀性和物理性质均匀性的表面驻波效应的改进控制。 通过最小化表面驻波效应，改善了膜沉积在其上的衬底表面上的膜性质的均匀性。 此外，我们开发了一种气体扩散板设计，其有助于在膜沉积期间等离子体密度在衬底表面上对称或不对称，这也提供了对沉积膜厚度的均匀性的改进的控制。

公开(公告)号：US20080178807A1

公开(公告)日：2008-07-31

申请号：US12099112

申请日：2008-04-07

申请人： Qunhua Wang ,  Li Hou ,  Sanjay Yadav ,  Gaku Furuta ,  Kenji Omori ,  Soo Young Choi ,  John M. White

发明人： Qunhua Wang ,  Li Hou ,  Sanjay Yadav ,  Gaku Furuta ,  Kenji Omori ,  Soo Young Choi ,  John M. White

IPC分类号： C23C16/00

CPC分类号： H01J37/3244 ,  C23C16/45565 ,  C23F4/00 ,  H01J37/32449

摘要： Embodiments of a gas distribution plate for distributing gas in a processing chamber for large area substrates are provided. The embodiments describe a gas distribution plate assembly for a plasma processing chamber having a cover plate comprises a diffuser plate having an upstream side, a downstream side facing a processing region, and a plurality of gas passages formed through the diffuser plate, and a baffle plate, placed between the cover plate of the process chamber and the diffuser plate, having a plurality of holes extending from the upper surface to the lower surface of the baffle plate, wherein the plurality of holes have at least two sizes. The small pinholes of the baffle plate are used to allow sufficient pass-through of gas mixture, while the large holes of the baffle plate are used to improve the process uniformity across the substrate.

摘要翻译： 提供了用于在大面积基板的处理室中分配气体的气体分配板的实施例。 实施方式描述了一种用于等离子体处理室的气体分配板组件，其具有盖板，该盖板包括具有上游侧，面向加工区域的下游侧和通过扩散板形成的多个气体通道的扩散板，以及挡板 ，放置在处理室的盖板和扩散板之间，具有从挡板的上表面延伸到下表面的多个孔，其中多个孔具有至少两个尺寸。 挡板的小针孔用于允许气体混合物的充分通过，而挡板的大孔用于改善基板上的工艺均匀性。

公开(公告)号：US10676817B2

公开(公告)日：2020-06-09

申请号：US13569064

申请日：2012-08-07

申请人： Qunhua Wang ,  Soo Young Choi ,  Robin L. Tiner ,  John M. White ,  Gaku Furuta ,  Beom Soo Park

发明人： Qunhua Wang ,  Soo Young Choi ,  Robin L. Tiner ,  John M. White ,  Gaku Furuta ,  Beom Soo Park

IPC分类号： C23C16/04 ,  C23C16/458 ,  C23C14/04

摘要： Device for processing a substrate are described herein. An apparatus for controlling deposition on a substrate can include a chamber comprising a shadow frame support, a substrate support comprising a substrate supporting surface, a shadow frame with a shadow frame body including a first support surface, a second support surface opposite the first surface, and a detachable lip connected with the shadow frame body. The detachable lip can include a support connection, a first lip surface facing the substrate, a second lip surface opposite the first lip surface, a first edge positioned over the first support surface, and a second edge opposite the first edge to contact the substrate.

公开(公告)号：US07125758B2

公开(公告)日：2006-10-24

申请号：US10829016

申请日：2004-04-20

申请人： Soo Young Choi ,  Tae Kyung Won ,  Gaku Furuta ,  Qunhua Wang ,  John M. White ,  Beom Soo Park

发明人： Soo Young Choi ,  Tae Kyung Won ,  Gaku Furuta ,  Qunhua Wang ,  John M. White ,  Beom Soo Park

IPC分类号： H01L21/471

CPC分类号： H01L21/0217 ,  C23C16/345 ,  H01L21/02274 ,  H01L21/3185 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78669

摘要： We have developed a method of PECVD depositing a-SiNx:H films which are useful in a TFT device as gate dielectric and passivation layers, when a series of TFT devices are arrayed over a substrate having a surface area larger than about 1 m2, which may be in the range of about 4.1 m2, and even as large as 9 m2. The a-SiNx:H films provide a uniformity of film thickness and uniformity of film properties, including chemical composition, which are necessary over such large substrate surface areas. The films produced by the method are useful for both liquid crystal active matrix displays and for organic light emitting diode control.

摘要翻译： 我们已经开发了一种PECVD沉积a-SiN＆lt; x＆gt;：H膜的方法，其可用于TFT器件作为栅极电介质和钝化层，当一系列TFT​​器件排列在具有表面的衬底上时 大于约1m 2的区域，其可以在约4.1m 2范围内，甚至大至9m 2/2。 a-SiN＆lt; x＆gt;：H膜提供了膜厚度的均匀性和膜特性的均匀性，包括在这种大的基材表面区域上必需的化学成分。 通过该方法生产的膜对于液晶有源矩阵显示器和有机发光二极管控制是有用的。

公开(公告)号：US20060090773A1

公开(公告)日：2006-05-04

申请号：US11088327

申请日：2005-03-22

申请人： Soo Choi ,  Qunhua Wang

发明人： Soo Choi ,  Qunhua Wang

IPC分类号： B08B6/00 ,  B08B9/00

CPC分类号： B08B7/0035 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862

摘要： A method for cleaning a substrate processing chamber including introducing a gas mixture to a remote plasma source, wherein the gas mixture comprises sulfur hexafluoride and an oxygen containing compound selected from the group consisting of oxygen and nitrous oxide, disassociating a portion of the gas mixture into ions, transporting the atoms into a processing region of the chamber, providing an in situ plasma, and cleaning a deposit from within the chamber by reaction with the ions.

摘要翻译： 一种用于清洁衬底处理室的方法，包括将气体混合物引入到远程等离子体源，其中所述气体混合物包括六氟化硫和选自氧和一氧化二氮的含氧化合物，将一部分气体混合物分解成 离子，将原子输送到室的处理区域中，提供原位等离子体，以及通过与离子反应来清洗室内的沉积物。

公开(公告)号：US20050266174A1

公开(公告)日：2005-12-01

申请号：US10858267

申请日：2004-06-01

申请人： Li Hou ,  Qunhua Wang ,  Edwin Sum ,  John White

发明人： Li Hou ,  Qunhua Wang ,  Edwin Sum ,  John White

IPC分类号： C23C16/505 ,  C23C16/00 ,  C23C16/458 ,  H01J37/32 ,  H01L21/00 ,  H01L21/205

CPC分类号： H01L21/67069 ,  C23C16/4585 ,  H01J37/32623

摘要： In a first aspect, a method is provided for use during plasma processing. The first method includes the steps of (1) placing a substrate on a substrate holder of a plasma chamber; (2) positioning a cover frame adjacent and below a perimeter of the substrate; and (3) employing the cover frame to reduce arcing during plasma processing within the plasma chamber. Numerous other aspects are provided.

摘要翻译： 在第一方面，提供了一种在等离子体处理期间使用的方法。 第一种方法包括以下步骤：（1）将衬底放置在等离子体室的衬底保持器上; （2）将盖框架定位在所述基板的周边附近和下方; 和（3）采用盖框架来减小等离子体室内的等离子体处理期间的电弧。 提供了许多其他方面。