公开(公告)号：US5637534A

公开(公告)日：1997-06-10

申请号：US172717

申请日：1993-12-27

申请人： Nobuyuki Takeyasu ,  Hiroshi Yamamoto ,  Yumiko Kawano ,  Eiichi Kondoh ,  Tomoharu Katagiri ,  Tomohiro Ohta

发明人： Nobuyuki Takeyasu ,  Hiroshi Yamamoto ,  Yumiko Kawano ,  Eiichi Kondoh ,  Tomoharu Katagiri ,  Tomohiro Ohta

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/44

CPC分类号： H01L23/53223 ,  H01L21/76802 ,  H01L21/76879 ,  H01L23/5226 ,  H01L2924/0002

摘要： A semiconductor device has a multilayered structure that includes an insulating interlayer formed on a lower wiring layer, a semiconductor substrate, and a via hole. The semiconductor device is manufactured by a method that includes plasma etching at least one surface of the insulating interlayer the in an atmosphere having as a major component either a carbonless, chlorine-based gas or a carbonless, chlorine-based gas and an inactive gas in order to remove contaminates that would otherwise promote reactivity with aluminum CVD on the surface of the insulating interlayer.

摘要翻译： 半导体器件具有多层结构，其包括形成在下布线层，半导体衬底和通孔上的绝缘中间层。 半导体器件通过以下方法制造：包括在作为主要成分的无碳，氯系气体或无碳，氯系气体和惰性气体的气氛中等离子体蚀刻绝缘夹层的至少一个表面 以去除否则将促进绝缘中间层表面上的铝CVD的反应性的污染物。

公开(公告)号：US5627345A

公开(公告)日：1997-05-06

申请号：US198788

申请日：1994-02-18

申请人： Hiroshi Yamamoto ,  Tomohiro Ohta ,  Nobuyuki Takeyasu

发明人： Hiroshi Yamamoto ,  Tomohiro Ohta ,  Nobuyuki Takeyasu

IPC分类号： H01L23/522 ,  H01L23/532 ,  H05K1/09 ,  H05K1/14

CPC分类号： H01L21/76852 ,  H01L21/76885 ,  H01L23/5226 ,  H01L23/53223 ,  H01L2924/0002 ,  Y10T29/49126 ,  Y10T29/49165

摘要： A multilevel interconnect structure for use in a semiconductor device includes a lower metal wiring having an aluminum or aluminum alloy film and a high melting point metal or high melting point metal alloy film. An interlayer insulating film is deposited on the lower metal wiring and a via hole is formed in the interlayer insulating film. A plug made of aluminum or aluminum alloy is formed in the via hole. An upper metal wiring has an aluminum or aluminum alloy film and a high melting point metal or high melting point metal alloy film. The plug directly contacts the aluminum or aluminum alloy film of at least one of the lower and upper metal wirings to decrease the via resistance without reducing the electromigration reliability.

摘要翻译： 用于半导体器件的多层互连结构包括具有铝或铝合金膜和高熔点金属或高熔点金属合金膜的下金属布线。 层间绝缘膜沉积在下金属布线上，并且在层间绝缘膜中形成通孔。 在通孔中形成由铝或铝合金制成的塞子。 上金属布线具有铝或铝合金膜和高熔点金属或高熔点金属合金膜。 插头直接接触下部和上部金属布线中的至少一个的铝或铝合金膜以降低通孔电阻而不降低电迁移可靠性。

公开(公告)号：US5619465A

公开(公告)日：1997-04-08

申请号：US584471

申请日：1996-01-11

申请人： Hidenori Nomura ,  Kenji Nagai ,  Masami Nakashima ,  Hiroshi Yamamoto ,  Isaya Sobue

发明人： Hidenori Nomura ,  Kenji Nagai ,  Masami Nakashima ,  Hiroshi Yamamoto ,  Isaya Sobue

IPC分类号： G11C7/06 ,  G11C11/406 ,  G11C11/4091 ,  G11C7/02

CPC分类号： G11C11/406 ,  G11C11/4091 ,  G11C7/065

摘要： A semiconductor memory device is disclosed, which is supplied with power from a power supply and which includes memory cells and a sense amplifier connected to the cells via bit lines. The memory device further includes a circuit for enabling the sense amplifier in response to a supplied enable signal, and for allowing the sense amplifier to rewrite cell data, read on the bit lines, into the memory cell again in self-refresh mode. The enabling circuit incorporates a noise suppression circuit which suppresses rapid changes in an operation current flowing between the power supply and the sense amplifier in order to minimize power supply related noise.

摘要翻译： 公开了一种半导体存储器件，其从电源提供电力，并且包括存储器单元和经由位线连接到单元的读出放大器。 存储器件还包括一个电路，用于响应所提供的使能信号使读出放大器能够使能，并且允许读出放大器在自刷新模式下再次将位线上的单元数据重新读入存储器单元。 使能电路包括噪声抑制电路，其抑制在电源和读出放大器之间流动的工作电流的快速变化，以便最小化与电源相关的噪声。

公开(公告)号：US5562468A

公开(公告)日：1996-10-08

申请号：US282461

申请日：1994-08-01

申请人： Hitoshi Sakai ,  Hitoshi Saito ,  Hiroshi Yamamoto

发明人： Hitoshi Sakai ,  Hitoshi Saito ,  Hiroshi Yamamoto

IPC分类号： H01R31/02 ,  H01R31/08

CPC分类号： H01R31/085 ,  Y10S439/923

摘要： A joint connector has a notch for exposing an outer peripheral surface of a bus bar-containing holder to the exterior when the holder is fitted in a holder receiving chamber is formed in a peripheral wall of the holder receiving chamber. Steps are formed at the outer peripheral surface of the bus bar containing holder, each of the steps being located at the notch when the bus bar-containing holder is fitted in the holder receiving chamber, thereby enabling the lifting of the bus bar-containing holder. A step is provided at the notch, so that the notch has a stair-like configuration. A plurality of notches and a plurality of pairs of steps are provided at the peripheral wall of the holder receiving chamber and the outer peripheral surface of the bus bar-containing holder, respectively.

摘要翻译： 接头连接器具有凹口，用于在保持器容纳室中的保持器接收室形成在保持器接收室的周壁上时，使总线条容纳保持器的外周面暴露于外部。 在汇流条容纳保持器的外周面上形成有台阶，当母线容纳保持器装配在保持器容纳室中时，每个台阶位于切口处，从而能够提升含母线夹持器 。 在切口处设置有台阶，使得切口具有阶梯状构造。 多个凹口和多对台阶分别设置在保持架容纳室的周壁和含母线容纳架的外周面上。

公开(公告)号：US5486492A

公开(公告)日：1996-01-23

申请号：US142971

申请日：1993-10-29

申请人： Hiroshi Yamamoto ,  Nobuyuki Takeyasu ,  Tomohiro Ohta

发明人： Hiroshi Yamamoto ,  Nobuyuki Takeyasu ,  Tomohiro Ohta

IPC分类号： H01L21/768 ,  H01L21/285 ,  H01L21/3065

CPC分类号： H01L21/76865 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76862 ,  H01L21/76879

摘要： A method of forming a via structure having good characteristics in a semiconductor device having a multilayered wiring structure includes forming a thin film including a high melting point metal or a high melting point metal compound on at least the side wall of a via hole before a via plug including Al or an Al alloy is formed.

摘要翻译： 在具有多层布线结构的半导体器件中形成具有良好特性的通孔结构的方法包括在通孔之前至少在通孔的侧壁上形成包括高熔点金属或高熔点金属化合物的薄膜 形成包括Al或Al合金的塞子。

公开(公告)号：US5314848A

公开(公告)日：1994-05-24

申请号：US764846

申请日：1991-09-24

申请人： Takatoshi Yasui ,  Chiaki Kudo ,  Ichiro Nakao ,  Toyokazu Fujii ,  Yuka Terai ,  Shinichi Imai ,  Hiroshi Yamamoto ,  Yasushi Naito

发明人： Takatoshi Yasui ,  Chiaki Kudo ,  Ichiro Nakao ,  Toyokazu Fujii ,  Yuka Terai ,  Shinichi Imai ,  Hiroshi Yamamoto ,  Yasushi Naito

IPC分类号： H01L21/3105 ,  H01L21/768 ,  H01L21/00 ,  H01L21/02 ,  H01L21/324 ,  H01L21/477

CPC分类号： H01L21/76819 ,  H01L21/3105 ,  Y10S148/133 ,  Y10S438/909

摘要： Described is a method for manufacturing semiconductor devices which includes a heat treating process for heating and cooling semiconductor substrates mounted on a boat at a predetermined pitch according to a predetermined temperature profile, in order to flatten the surface of each semiconductor substrate by reflowing an insulating film containing impurities, for example, a BPSG film formed on the substrate. In the heat treating process, one of the control factors which affects the formation of grains or particles due to the impurities contained in the insulating film is set so as to prevent the impurities from generating grains or particles during the heat treatment. Also disclosed is a method of preventing the generation of grains or particles by widening the pitch of the mounted substrates.

摘要翻译： 描述了一种用于制造半导体器件的方法，其包括根据预定温度分布以预定间距对安装在船上的半导体衬底进行加热和冷却的热处理工艺，以便通过回流绝缘膜来平坦化每个半导体衬底的表面 含有杂质，例如在基板上形成的BPSG膜。 在热处理过程中，设定影响绝缘膜中含有杂质的晶粒或颗粒形成的控制因素之一，以防止杂质在热处理过程中产生晶粒或颗粒。 还公开了通过扩大安装的基板的间距来防止颗粒或颗粒的产生的方法。

公开(公告)号：US5294577A

公开(公告)日：1994-03-15

申请号：US82048

申请日：1993-06-24

申请人： Hiroshi Yamamoto ,  Junichi Nomura ,  Hideaki Niimi ,  Yasunobu Yoneda

发明人： Hiroshi Yamamoto ,  Junichi Nomura ,  Hideaki Niimi ,  Yasunobu Yoneda

IPC分类号： C04B35/453 ,  C04B35/49

CPC分类号： C04B35/453

摘要： A semiconducting ceramic composition for secondary electron multipliers consists essentially of 55 to 80 mol % of zinc oxide, 12 to 30 mol % of titanium oxide, and 0.2 to 20 mol % of nickel oxide.

摘要翻译： 用于二次电子倍增器的半导体陶瓷组合物基本上由55至80mol％的氧化锌，12至30mol％的氧化钛和0.2至20mol％的氧化镍组成。

公开(公告)号：US5256045A

公开(公告)日：1993-10-26

申请号：US755283

申请日：1991-09-05

申请人： Ken-ichi Ohtani ,  Osamu Sakamoto ,  Masahiko Houzouji ,  Hiroshi Yamamoto

发明人： Ken-ichi Ohtani ,  Osamu Sakamoto ,  Masahiko Houzouji ,  Hiroshi Yamamoto

IPC分类号： C08C19/20 ,  B29C35/02 ,  B29C43/02 ,  B29C43/10 ,  B29D29/00 ,  B29K21/00 ,  B29K105/24 ,  B29L29/00 ,  C08F8/34 ,  B29C35/04

CPC分类号： B29D29/00 ,  B29C43/021 ,  B29C43/102 ,  Y10S425/818

摘要： A vulcanizing apparatus including a cylindrical vulcanizing drum for winding and molding unvulcanized rubber belt materials thereover, the vulcanizing drum being removably and rotatably supported on a transfer mechanism. A pair of endless pressurizing bands are arranged to oppose each other with the vulcanizing drum between, the pressurizing bands arcuately surrounding and pressing the corresponding portions of the circumferential surface of the vulcanizing drum. While the circumferential surface of the vulcanizing drum is heated inside, and the respective pressurizing bands are opposingly pressed against the vulcanizing drum, the respective pressurizing bands are synchronously rotated so as to turn the vulcanizing drum and continuously vulcanize the unvulcanized rubber belt molding on the drum.

摘要翻译： 一种硫化装置，包括用于在其上卷绕和模制未硫化橡胶带材料的圆柱形硫化鼓，硫化鼓可拆卸地且可旋转地支撑在转移机构上。 一对无尽的加压带布置成使硫化鼓彼此相对，加压带弧形地围绕并挤压硫化滚筒的圆周表面的对应部分。 当硫化鼓的圆周表面被加热到内部并且相应的加压带相对地压靠在硫化鼓上时，相应的加压带同步旋转，以便转动硫化鼓并且连续硫化滚筒上的未硫化橡胶带模制品 。

公开(公告)号：US5254021A

公开(公告)日：1993-10-19

申请号：US932503

申请日：1992-08-20

申请人： Hiroshi Yamamoto ,  Hitoshi Sakai ,  Takayoshi Endo ,  Tamio Watanabe

发明人： Hiroshi Yamamoto ,  Hitoshi Sakai ,  Takayoshi Endo ,  Tamio Watanabe

IPC分类号： H01R13/46 ,  H01R4/18

CPC分类号： H01R4/185

摘要： An electrical terminal is for use in an automotive wire harness connector. The electrical terminal has a conductor crimping portion for crimping the conductor of an electrical wire and a stabilizer which crimps the insulation coating of the electrical wire and prevents rolling of the electrical terminal. The stabilizer has a bottom plate which is partly cut to form an aperture, the portions of the bottom plate defining both ends of the aperture being bent and raised inward so as to enhance the crimping force on the insulation coating of the electrical wire.

摘要翻译： 电气端子用于汽车线束连接器。 电端子具有用于压接电线的导体的导体压接部分和压紧电线的绝缘涂层并防止电端子的滚动的稳定器。 稳定器具有部分切割以形成孔的底板，限定孔的两端的底板的部分被向内弯曲和向内升高，以增强电线的绝缘涂层上的卷曲力。

公开(公告)号：US5211059A

公开(公告)日：1993-05-18

申请号：US800117

申请日：1991-11-29

申请人： Yasuo Hayakawa ,  Sakae Takeda ,  Tosio Nonaka ,  Katsumi Miyaki ,  Hiroshi Yamamoto ,  Kazuo Fujishima

发明人： Yasuo Hayakawa ,  Sakae Takeda ,  Tosio Nonaka ,  Katsumi Miyaki ,  Hiroshi Yamamoto ,  Kazuo Fujishima

IPC分类号： G01N29/06 ,  G01S15/89

CPC分类号： G01S15/8906 ,  G01N29/06

摘要： The present invention relates to an acoustic microscope system having an ultrasonic probe that is driven with a high-frequency burst signal to radiate an ultrasonic signal and that detects the resulting reflected and irradiated waves, a Z-axis moving device that updates the vertical distance Z between the probe and a material of interest for each sampling position, and device for constructing a V(z) curve from the reflection signals obtained at respective sampling positions. The ultrasonic probe of the invention is provided with an acoustic lens, a first ultrasonic transducer for receiving a leaky surface skimming compressional wave reflected from a sample material on one side of the acoustic lens, and a second ultrasonic transducer also provided on the side of the acoustic lens for receiving a leaky surface acoustic wave.