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公开(公告)号:US11682448B2
公开(公告)日:2023-06-20
申请号:US17852286
申请日:2022-06-28
Applicant: Rambus Inc.
Inventor: Thomas J. Giovannini , Alok Gupta , Ian Shaeffer , Steven C. Woo
IPC: G06F12/00 , G11C11/4076 , G06F3/06 , G06F5/06 , G06F1/08 , G11C7/10 , G11C29/02 , G06F13/16 , G06F12/06 , G11C11/409 , G11C11/4096
CPC classification number: G11C11/4076 , G06F1/08 , G06F3/0629 , G06F3/0634 , G06F5/06 , G06F12/0646 , G06F13/1689 , G11C7/1078 , G11C7/1087 , G11C7/1093 , G11C11/409 , G11C29/023 , G11C29/028 , G11C11/4096 , G11C2207/2254
Abstract: A system that calibrates timing relationships between signals involved in performing write operations is described. This system includes a memory controller which is coupled to a set of memory chips, wherein each memory chip includes a phase detector configured to calibrate a phase relationship between a data-strobe signal and a clock signal received at the memory chip from the memory controller during a write operation. Furthermore, the memory controller is configured to perform one or more write-read-validate operations to calibrate a clock-cycle relationship between the data-strobe signal and the clock signal, wherein the write-read-validate operations involve varying a delay on the data-strobe signal relative to the clock signal by a multiple of a clock period.
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公开(公告)号:US11579965B2
公开(公告)日:2023-02-14
申请号:US17481246
申请日:2021-09-21
Applicant: Rambus Inc.
Inventor: Ian Shaeffer , Craig E. Hampel
Abstract: Systems and methods are provided for detecting and correcting address errors in a memory system. In the memory system, a memory device generates an error-detection code based on an address transmitted via an address bus and transmits the error-detection code to a memory controller. The memory controller transmits an error indication to the memory device in response to the error-detection code. The error indication causes the memory device to remove the received address and prevent a memory operation.
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公开(公告)号:US11468928B2
公开(公告)日:2022-10-11
申请号:US17222388
申请日:2021-04-05
Applicant: Rambus Inc.
Inventor: Ian Shaeffer , Kyung Suk Oh
IPC: G11C5/06 , G11C7/22 , G11C29/02 , G11C11/4063 , G11C5/04 , G11C11/4097 , G11C7/18 , G11C5/02
Abstract: A system has a plurality of memory devices arranged in a fly-by topology, each having on-die termination (ODT) circuitry for connecting to an address and control (RQ) bus. The ODT circuitry of each memory device includes a set of one or more control registers for controlling on-die termination of one or more signal lines of the RQ bus. A memory controller sends register values, for storage in a plurality of registers of a respective memory device. The register values include register values that represent one or more impedance values of on-die termination (ODT) impedances to apply to the respective inputs of the respective memory device that receive the CA signals, and one or more register values to selectively enable application of a chip select ODT impedance to the chip select input of the respective memory device.
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公开(公告)号:US20220172760A1
公开(公告)日:2022-06-02
申请号:US17531151
申请日:2021-11-19
Applicant: Rambus Inc.
Inventor: Ian Shaeffer , Lawrence Lai , Fan Ho , David A. Secker , Wayne S. Richardson , Akash Bansal , Brian S. Leibowitz , Kyung Suk Oh
Abstract: A memory device comprising a programmable command-and-address (CA) interface and/or a programmable data interface is described. In an operational mode, two or more CA interfaces may be active. In another operational mode, at least one, but not all, CA interfaces may be active. In an operational mode, all of the data interfaces may be active. In another operational mode, at least one, but not all, data interfaces may be active. The memory device can include circuitry to select: an operational mode; a sub-mode within an operational mode; one or more CA interfaces as the active CA interface(s); a main CA interface from multiple active CA interfaces; and/or one or more data interfaces as the active data interfaces. The circuitry may perform these selection(s) based on one or more bits in one or more registers and/or one or more signals received on one or more pins.
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公开(公告)号:US20220140828A1
公开(公告)日:2022-05-05
申请号:US17527511
申请日:2021-11-16
Applicant: Rambus Inc.
Inventor: Ian Shaeffer
IPC: H03K19/00 , G11C5/06 , G11C7/10 , H03K19/0175 , G11C11/4063 , G11C11/413 , G11C16/06 , G11C5/14
Abstract: Local on-die termination controllers for effecting termination of a high-speed signaling links simultaneously engage on-die termination structures within multiple integrated-circuit memory devices disposed on the same memory module, and/or within the same integrated-circuit package, and coupled to the high-speed signaling link. A termination control bus is coupled to memory devices on a module, and provides for peer-to-peer communication of termination control signals.
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公开(公告)号:US11206020B2
公开(公告)日:2021-12-21
申请号:US16880208
申请日:2020-05-21
Applicant: Rambus Inc.
Inventor: Ian Shaeffer
IPC: H03K19/00 , H03K19/0175 , G11C5/06 , G11C5/14 , G11C7/10 , G11C11/4063 , G11C11/413 , G11C16/06
Abstract: Local on-die termination controllers for effecting termination of a high-speed signaling links simultaneously engage on-die termination structures within multiple integrated-circuit memory devices disposed on the same memory module, and/or within the same integrated-circuit package, and coupled to the high-speed signaling link. A termination control bus is coupled to memory devices on a module, and provides for peer-to-peer communication of termination control signals.
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公开(公告)号:US20210375351A1
公开(公告)日:2021-12-02
申请号:US17323889
申请日:2021-05-18
Applicant: Rambus Inc.
Inventor: Ian Shaeffer , Ely Tsern , Craig Hampel
IPC: G11C11/4093 , H01L25/065 , H01L25/10 , G11C5/02 , G11C5/04 , G11C5/06 , G11C7/10 , G11C7/22 , G06F13/40 , G06F13/16 , G11C11/4076 , G11C11/4091 , G11C11/4094 , G11C11/4096
Abstract: Systems, among other embodiments, include topologies (data and/or control/address information) between an integrated circuit buffer device (that may be coupled to a master, such as a memory controller) and a plurality of integrated circuit memory devices. For example, data may be provided between the plurality of integrated circuit memory devices and the integrated circuit buffer device using separate segmented (or point-to-point link) signal paths in response to control/address information provided from the integrated circuit buffer device to the plurality of integrated circuit buffer devices using a single fly-by (or bus) signal path. An integrated circuit buffer device enables configurable effective memory organization of the plurality of integrated circuit memory devices. The memory organization represented by the integrated circuit buffer device to a memory controller may be different than the actual memory organization behind or coupled to the integrated circuit buffer device. The buffer device segments and merges the data transferred between the memory controller that expects a particular memory organization and actual memory organization.
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公开(公告)号:US20210279191A1
公开(公告)日:2021-09-09
申请号:US17191469
申请日:2021-03-03
Applicant: Rambus Inc.
Inventor: Ian Shaeffer , Thomas J. Giovannini
Abstract: Apparatus and methods for operation of a memory controller, memory device and system are described. During operation, the memory controller transmits a read command which specifies that a memory device output data accessed from a memory core. This read command contains information which specifies whether the memory device is to commence outputting of a timing reference signal prior to commencing outputting of the data. The memory controller receives the timing reference signal if the information specified that the memory device output the timing reference signal. The memory controller subsequently samples the data output from the memory device based on information provided by the timing reference signal output from the memory device.
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公开(公告)号:US11049546B2
公开(公告)日:2021-06-29
申请号:US16865928
申请日:2020-05-04
Applicant: Rambus Inc.
Inventor: Ian Shaeffer , Lei Luo , Liji Gopalakrishnan
IPC: G11C11/4076 , G11C11/4096 , G11C7/10 , G11C7/20 , G11C7/22 , G11C11/4072 , G11C11/4074 , G06F1/3237 , G06F1/04 , G06F1/3234 , G06F1/08 , G11C11/408
Abstract: An integrated circuit includes a physical layer interface having a control timing domain and a data timing domain, and circuits that enable the control timing domain during a change in power conservation mode in response to a first event, and that enable the data timing domain in response to a second event. The control timing domain can include interface circuits coupled to a command and address path, and the data timing domain can include interface circuits coupled to a data path.
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公开(公告)号:US11043258B2
公开(公告)日:2021-06-22
申请号:US16842368
申请日:2020-04-07
Applicant: Rambus Inc.
Inventor: Ian Shaeffer , Ely Tsern , Craig Hampel
IPC: G11C7/00 , G11C11/4093 , H01L25/065 , H01L25/10 , G11C5/02 , G11C5/04 , G11C5/06 , G11C7/10 , G11C7/22 , G06F13/40 , G06F13/16 , G11C11/4076 , G11C11/4091 , G11C11/4094 , G11C11/4096 , H01L25/18 , H01L23/00
Abstract: Systems, among other embodiments, include topologies (data and/or control/address information) between an integrated circuit buffer device (that may be coupled to a master, such as a memory controller) and a plurality of integrated circuit memory devices. For example, data may be provided between the plurality of integrated circuit memory devices and the integrated circuit buffer device using separate segmented (or point-to-point link) signal paths in response to control/address information provided from the integrated circuit buffer device to the plurality of integrated circuit buffer devices using a single fly-by (or bus) signal path. An integrated circuit buffer device enables configurable effective memory organization of the plurality of integrated circuit memory devices. The memory organization represented by the integrated circuit buffer device to a memory controller may be different than the actual memory organization behind or coupled to the integrated circuit buffer device. The buffer device segments and merges the data transferred between the memory controller that expects a particular memory organization and actual memory organization.
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