公开(公告)号：US06997985B1

公开(公告)日：2006-02-14

申请号：US08768535

申请日：1996-12-18

申请人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Toru Takayama ,  Hideki Uochi

发明人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Toru Takayama ,  Hideki Uochi

IPC分类号： C30B1/06

CPC分类号： H01L21/02672 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/78696

摘要： Method of fabricating semiconductor devices such as thin-film transistors by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transition point of the substrate so as to crystallize the silicon film. Islands, stripes, lines, or dots of nickel, iron, cobalt, or platinum, silicide, acetate, or nitrate of nickel, iron, cobalt, or platinum, film containing various salts, particles, or clusters containing at least one of nickel, iron, cobalt, and platinum are used as starting materials for crystallization. These materials are formed on or under the amorphous silicon film.

摘要翻译： 通过在低于非晶硅的正常结晶温度或低于基板的玻璃化转变点的温度下退火基本上非晶硅膜以使硅膜结晶的方法来制造诸如薄膜晶体管的半导体器件。 镍，铁，钴或铂的岛，条纹，线或点，镍，铁，钴或铂的硅化物，乙酸盐或硝酸盐，含有各种盐，包含至少一种镍， 铁，钴和铂用作结晶的起始原料。 这些材料形成在非晶硅膜上或下方。

公开(公告)号：US20050127371A1

公开(公告)日：2005-06-16

申请号：US11043283

申请日：2005-01-27

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Mai Akiba

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Mai Akiba

IPC分类号： H05B33/00 ,  H01L27/32 ,  H01L51/52 ,  H01L29/04

CPC分类号： H01L51/0097 ,  H01L27/3244 ,  H01L27/326 ,  H01L51/5237 ,  H01L51/5253 ,  H01L51/5256 ,  H01L51/529 ,  H01L51/56 ,  H01L2221/68368 ,  H01L2227/326 ,  H01L2251/5315 ,  H01L2251/5338

摘要： The present invention has an object of providing a light emitting device including an OLED formed on a plastic substrate, which can prevent the degradation due to penetration of moisture or oxygen. On a plastic substrate, a plurality of films for preventing oxygen or moisture from penetrating into an organic light emitting layer in the OLED (hereinafter, referred to as barrier films) and a film having a smaller stress than that of the barrier films (hereinafter, referred to as a stress relaxing film), the film being interposed between the barrier films, are provided. Owing to a laminate structure of a plurality of barrier films, even if a crack occurs in one of the barrier films, the other barrier film(s) can effectively prevent moisture or oxygen from penetrating into the organic light emitting layer. Moreover, the stress relaxing film, which has a smaller stress than that of the barrier films, is interposed between the barrier films, thereby making it possible to reduce a stress of the entire sealing film. As a result, a crack due to stress hardly occurs.

公开(公告)号：US20050106898A1

公开(公告)日：2005-05-19

申请号：US11017870

申请日：2004-12-22

申请人： Toru Takayama ,  Shunpei Yamazaki ,  Kengo Akimoto

发明人： Toru Takayama ,  Shunpei Yamazaki ,  Kengo Akimoto

IPC分类号： H01L21/314 ,  H01L21/318 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/13 ,  H01L29/423 ,  H01L29/49

CPC分类号： H01L21/0217 ,  B32B17/04 ,  B32B17/06 ,  C23C14/0652 ,  C23C14/5846 ,  H01L21/02266 ,  H01L21/3145 ,  H01L21/3185 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/13 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3297 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/518 ,  H01L29/66757 ,  H01L2224/16225 ,  H01L2924/181 ,  H01L2924/00012

摘要： An object of the present invention is to apply an insulating film of cure and high quality that is suitably applicable as gate insulating film and protective film to a technique that the insulating film is formed on the glass substrate under a temperature of strain point or lower, and to a semiconductor device realizing high efficiency and high reliability by using it. In a semiconductor device of the present invention, a gate insulating film of a field effect type transistor with channel length of from 0.35 to 2.5 μm in which a silicon nitride film is formed over a crystalline semiconductor film through a silicon oxide film, wherein the silicon nitride film contains hydrogen with the concentration of 1×1021/cm3 or less and has characteristic of an etching rate of 10 nm/min or less with respect to mixed solution containing an ammonium hydrogen fluoride (NH4HF2) of 7.13% and an ammonium fluoride (NH4F) of 15.4%.

摘要翻译： 本发明的目的是将适合作为栅极绝缘膜和保护膜的固化和高质量的绝缘膜应用于在应变点或更低的温度下在玻璃基板上形成绝缘膜的技术， 以及通过使用它实现高效率和高可靠性的半导体器件。 在本发明的半导体器件中，通过氧化硅膜在晶体半导体膜上形成通道长度为0.35〜2.5μm的场效应晶体管的栅极绝缘膜，其中，硅 氮化物膜含有浓度为1×10 21 / cm 3以下的氢，并且具有相对于含有一种或多种的混合溶液的蚀刻速率为10nm / min或更小的特性 氟化氢铵（NH 4 HF 2 H 2）为7.13％，氟化铵（NH 4 N 4 F）为15.4％。

公开(公告)号：US20050056840A1

公开(公告)日：2005-03-17

申请号：US10961144

申请日：2004-10-12

申请人： Shunpei Yamazaki ,  Satoshi Murakami ,  Masayuki Sakakura ,  Toru Takayama

发明人： Shunpei Yamazaki ,  Satoshi Murakami ,  Masayuki Sakakura ,  Toru Takayama

IPC分类号： H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/32 ,  H01L29/786 ,  H01L51/52 ,  H01L29/04

CPC分类号： H01L27/3244 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/3276 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78633 ,  H01L51/524 ,  H01L51/5246 ,  H01L51/5256 ,  H01L51/5259 ,  H01L51/5284 ,  H01L2227/323

摘要： The reliability of a light-emitting device constituted by a combination of a TFT and a light-emitting element is to be improved. A light-emitting element is formed between a first substrate and a second substrate. The light-emitting device is formed over a first insulating layer made of an organic compound and a second insulating layer made of an inorganic insulating material containing nitrogen formed on the surface of the first insulating layer. In an outer circumferential part of a display area formed by the light-emitting element, a shield pattern surrounding the display area is formed by metal wiring on the second insulating layer, and the first substrate and the second substrate are fixed to each other with an adhesive resin formed in contact with the shield pattern.

摘要翻译： 提高由TFT和发光元件的组合构成的发光装置的可靠性。 在第一基板和第二基板之间形成发光元件。 发光器件形成在由有机化合物制成的第一绝缘层和由形成在第一绝缘层的表面上的含氮的无机绝缘材料制成的第二绝缘层上。 在由发光元件形成的显示区域的外周部分中，通过第二绝缘层上的金属布线形成围绕显示区域的屏蔽图案，并且第一基板和第二基板被固定在一起 形成为与屏蔽图案接触的粘合树脂。

公开(公告)号：US20050032336A1

公开(公告)日：2005-02-10

申请号：US10940821

申请日：2004-09-15

申请人： Shunpei Yamazaki ,  Osamu Nakamura ,  Masayuki Kajiwara ,  Junichi Koezuka ,  Koji Dairiki ,  Toru Mitsuki ,  Toru Takayama ,  Hideto Ohnuma ,  Taketomi Asami ,  Mitsuhiro Ichijo

发明人： Shunpei Yamazaki ,  Osamu Nakamura ,  Masayuki Kajiwara ,  Junichi Koezuka ,  Koji Dairiki ,  Toru Mitsuki ,  Toru Takayama ,  Hideto Ohnuma ,  Taketomi Asami ,  Mitsuhiro Ichijo

IPC分类号： G02F1/1368 ,  H01L21/20 ,  H01L21/28 ,  H01L21/322 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L21/00

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/3221 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78633 ,  H01L29/78645 ,  H01L29/78675 ,  H01L29/78678

摘要： It is intended to achieve the reduction in number of heat treatments carried out at high temperature (at least 600° C.) and the employment of lower temperature processes (600° C. or lower), and to achieve step simplification and throughput improvement. In the present invention, a barrier layer (105), a second semiconductor film (106), and a third semiconductor layer (108) containing an impurity element (phosphorus) that imparts one conductive type are formed on a first semiconductor film (104) having a crystalline structure. Gettering is carried out in which the metal element contained in the first semiconductor film (104) is allowed to pass through the barrier layer (105) and the second semiconductor film (106) by a heat treatment to move into the third semiconductor film (107). Afterward, the second and third semiconductor films (106) and (107) are removed with the barrier layer (105) used as an etching stopper.

摘要翻译： 旨在实现在高温（至少600℃）下进行的热处理和使用较低温度工艺（600℃或更低）的热处理数量的减少，并且实现步骤简化和生产量提高。 在本发明中，在第一半导体膜（104）上形成有阻挡层（105），第二半导体膜（106）和含有赋予一种导电类型的杂质元素（磷）的第三半导体层（108） 具有晶体结构。 进行吸收，其中包含在第一半导体膜（104）中的金属元素被允许通过热处理通过阻挡层（105）和第二半导体膜（106）以移动到第三半导体膜（107） ）。 之后，第二和第三半导体膜（106）和（107）被用作蚀刻停止层的阻挡层（105）去除。

公开(公告)号：US06822264B2

公开(公告)日：2004-11-23

申请号：US10294839

申请日：2002-11-15

申请人： Shunpei Yamazaki ,  Satoshi Murakami ,  Masayuki Sakakura ,  Toru Takayama

发明人： Shunpei Yamazaki ,  Satoshi Murakami ,  Masayuki Sakakura ,  Toru Takayama

IPC分类号： H01L2715

CPC分类号： H01L27/3244 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/3276 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78633 ,  H01L51/524 ,  H01L51/5246 ,  H01L51/5256 ,  H01L51/5259 ,  H01L51/5284 ,  H01L2227/323

摘要： The reliability of a light-emitting device constituted by a combination of a TFT and a light-emitting element is to be improved. A light-emitting element is formed between a first substrate and a second substrate. The light-emitting device is formed over a first insulating layer made of an organic compound and a second insulating layer made of an inorganic insulating material containing nitrogen formed on the surface of the first insulating layer. In an outer circumferential part of a display area formed by the light-emitting element, a shield pattern surrounding the display area is formed by metal wiring on the second insulating layer, and the first substrate and the second substrate are fixed to each other with an adhesive resin formed in contact with the shield pattern.

摘要翻译： 提高由TFT和发光元件的组合构成的发光装置的可靠性。 在第一基板和第二基板之间形成发光元件。 发光器件形成在由有机化合物制成的第一绝缘层和由形成在第一绝缘层的表面上的含氮的无机绝缘材料制成的第二绝缘层上。 在由发光元件形成的显示区域的外周部分中，通过第二绝缘层上的金属布线形成围绕显示区域的屏蔽图案，并且第一基板和第二基板被固定在一起 形成为与屏蔽图案接触的粘合树脂。

公开(公告)号：US06815723B2

公开(公告)日：2004-11-09

申请号：US10317615

申请日：2002-12-12

申请人： Shunpei Yamazaki ,  Toshiji Hamatani ,  Toru Takayama

发明人： Shunpei Yamazaki ,  Toshiji Hamatani ,  Toru Takayama

IPC分类号： H01L2715

CPC分类号： H01L27/3211 ,  H01L21/67207 ,  H01L27/3209 ,  H01L27/3218 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3281 ,  H01L51/5036 ,  H01L51/504 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/5284 ,  H01L51/56 ,  H01L2251/5315

摘要： A light emitting device having high definition, a high aperture ratio, and high reliability is provided. The present invention achieves high definition and a high aperture ratio with a full color flat panel display using red, green, and blue color emission light by intentionally forming laminate portions, wherein portions of different organic compound layers of adjacent light emitting elements overlap with each other, without depending upon the method of forming the organic compound layers or the film formation precision.

摘要翻译： 提供了具有高清晰度，高开口率和高可靠性的发光器件。 本发明通过有意形成层叠部分，利用红色，绿色和蓝色发光的全色平板显示器实现了高清晰度和高开口率，其中相邻发光元件的不同有机化合物层的部分彼此重叠 ，而不依赖于形成有机化合物层的方法或成膜精度。

公开(公告)号：US06493057B1

公开(公告)日：2002-12-10

申请号：US09347834

申请日：1999-07-02

申请人： Masahiko Sato ,  Toshimitsu Konuma ,  Masakazu Odaka ,  Toshiharu Yamaguchi ,  Toshio Watanabe ,  Osamu Aoyagi ,  Kaoru Tabata ,  Chizuru Isigaki ,  Hiroyuki Sakayori ,  Ippei Kobayashi ,  Akio Osabe ,  Shunpei Yamazaki ,  Toru Takayama ,  Akira Mase

发明人： Masahiko Sato ,  Toshimitsu Konuma ,  Masakazu Odaka ,  Toshiharu Yamaguchi ,  Toshio Watanabe ,  Osamu Aoyagi ,  Kaoru Tabata ,  Chizuru Isigaki ,  Hiroyuki Sakayori ,  Ippei Kobayashi ,  Akio Osabe ,  Shunpei Yamazaki ,  Toru Takayama ,  Akira Mase

IPC分类号： G02F11339

CPC分类号： G02F1/13394 ,  G02F1/1339

摘要： An improved liquid crystal device and manufacturing method for same are described. In the device, a pair of substrates, between which a liquid crystal layer is disposed, is joined with pillars inbetween functioning as spacers which are provided of photocurable resin by photolithography. With this structure, the spacers can be in surface contact with the inside surfaces of the substrates on which electrode arrangement and active devices are formed.

摘要翻译： 描述了一种改进的液晶装置及其制造方法。 在该装置中，配置有液晶层的一对基板与作为间隔物之间​​的柱连接起来，该间隔物通过光刻法设置在光固化树脂上。 利用这种结构，间隔物可以与其上形成电极布置和有源器件的基板的内表面接触。

公开(公告)号：US06380558B1

公开(公告)日：2002-04-30

申请号：US09472137

申请日：1999-12-23

申请人： Shunpei Yamazaki ,  Taketomi Asami ,  Toru Takayama ,  Ritsuko Kawasaki ,  Hiroki Adachi ,  Naoya Sakamoto ,  Masahiko Hayakawa ,  Hiroshi Shibata ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Taketomi Asami ,  Toru Takayama ,  Ritsuko Kawasaki ,  Hiroki Adachi ,  Naoya Sakamoto ,  Masahiko Hayakawa ,  Hiroshi Shibata ,  Yasuyuki Arai

IPC分类号： H01L2904

CPC分类号： H01L29/7842 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78636 ,  H01L29/78645 ,  H01L2029/7863

摘要： In a semiconductor device including a laminate of a first insulating layer, a crystalline semiconductor layer, and a second insulating layer, characteristics of the device are improved by determining its structure in view of stress balance. In the semiconductor device including an active layer of the crystalline semiconductor layer having tensile stress on a substrate, tensile stress is given to the first insulating layer formed to be in close contact with a surface of the semiconductor layer at a substrate side, and compressive stress is given to the second insulating layer formed to be in close contact with a surface of the semiconductor layer at a side opposite to the substrate side.

摘要翻译： 在包括第一绝缘层，结晶半导体层和第二绝缘层的层叠体的半导体器件中，通过从应力平衡的角度来确定其结构，改善了器件的特性。 在包括在基板上具有拉伸应力的结晶半导体层的有源层的半导体器件中，对形成为与基板侧的半导体层的表面紧密接触的第一绝缘层施加拉伸应力，压缩应力 被赋予形成为与衬底侧相反的一侧与半导体层的表面紧密接触的第二绝缘层。

公开(公告)号：US06283060B1

公开(公告)日：2001-09-04

申请号：US09069942

申请日：1998-04-30

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Mitsunori Sakama ,  Hisashi Abe ,  Hiroshi Uehara ,  Mika Ishiwata

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Mitsunori Sakama ,  Hisashi Abe ,  Hiroshi Uehara ,  Mika Ishiwata

IPC分类号： C23C16509

CPC分类号： H01J37/32477 ,  C23C16/4401 ,  C23C16/5096 ,  Y10S438/905

摘要： In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamber 104 with a power source 113, a vacuum exhausting means 118, and a reaction gas introduction pipe 114, plasma 115 is generated in a space surrounded by an electrode 111, a substrate holder 112, and an insulator 120.

摘要翻译： 在等离子体CVD装置中，防止了不必要的放电，例如电弧放电，由于附着在反应室上的膜的剥离引起的颗粒的量减少，并且在该设备的工作时间内有助于生产的时间的百分比增加 同时保持设备的扩大和易于加工的性能。 等离子体CVD装置被构造成使得在具有电源113，真空排气装置118和反应气体引入管114的导电反应室104中，在由电极111围绕的空间中产生等离子体115，衬底保持器 112和绝缘体120。