公开(公告)号：US07296460B2

公开(公告)日：2007-11-20

申请号：US11057594

申请日：2005-02-14

申请人： Frank Dimeo, Jr. ,  Philip S. H. Chen ,  Jeffrey W. Neuner ,  James Welch ,  Michele Stawasz ,  Thomas H. Baum ,  Mackenzie E. King ,  Ing-Shin Chen ,  Jeffrey F. Roeder

发明人： Frank Dimeo, Jr. ,  Philip S. H. Chen ,  Jeffrey W. Neuner ,  James Welch ,  Michele Stawasz ,  Thomas H. Baum ,  Mackenzie E. King ,  Ing-Shin Chen ,  Jeffrey F. Roeder

IPC分类号： G01N7/00

CPC分类号： G01N27/128 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/32981 ,  Y10T29/49007 ,  Y10T436/17 ,  Y10T436/19

摘要： A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package so that the package becomes a platform of the detector.

摘要翻译： 用于检测含有其的气体中的含氟物质的气体检测器和方法，例如用HF，NF 3等进行蚀刻清洁的半导体加工工具的流出物。优选的检测器 结构布置采用基于微机电系统（MEMS）的器件结构和/或独立的金属元件，其在需要高温感测时用作感测部件并且可选地作为热源。 独立的金属元件可以直接制造在标准芯片载体/器件封装上，使得封装成为检测器的平台。

公开(公告)号：US07198815B2

公开(公告)日：2007-04-03

申请号：US11224588

申请日：2005-09-12

申请人： Tianniu Chen ,  Chongying Xu ,  Thomas H. Baum

发明人： Tianniu Chen ,  Chongying Xu ,  Thomas H. Baum

IPC分类号： B05D5/12

CPC分类号： C23C16/45553 ,  C07F9/005 ,  C23C16/18 ,  C23C16/34 ,  C23C16/40 ,  C23C16/405 ,  C23C16/45525 ,  H01L21/28556 ,  Y10T29/49117

摘要： Tantalum precursors useful in depositing tantalum nitride or tantalum oxides materials on substrates, by processes such as chemical vapor deposition and atomic layer deposition. The precursors are useful in forming tantalum-based diffusion barrier layers on microelectronic device structures featuring copper metallization and/or ferroelectric thin films.

摘要翻译： 钽前体可用于通过诸如化学气相沉积和原子层沉积的方法在衬底上沉积氮化钽或钽氧化物材料。 这些前体可用于在具有铜金属化和/或铁电薄膜的微电子器件结构上形成钽基扩散阻挡层。

公开(公告)号：US07029373B2

公开(公告)日：2006-04-18

申请号：US09929564

申请日：2001-08-14

申请人： Ying Ma ,  William Wojtczak ,  Cary Regulski ,  Thomas H. Baum ,  David D. Bernhard ,  Deepak Verma

发明人： Ying Ma ,  William Wojtczak ,  Cary Regulski ,  Thomas H. Baum ,  David D. Bernhard ,  Deepak Verma

IPC分类号： B24B1/00

CPC分类号： H01L21/3212 ,  B24B37/0056 ,  B24B37/044 ,  C09G1/02

摘要： A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper, barrier material and dielectric material that comprises first and second-step slurries. The first-step slurry has a high removal rate on copper and a low removal rate on barrier material. The second-step slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first slurry comprises at least an organic polymeric abrasive.

公开(公告)号：US06822107B1

公开(公告)日：2004-11-23

申请号：US10643272

申请日：2003-08-19

申请人： Thomas H. Baum ,  Gautam Bhandari ,  Chongying Xu

发明人： Thomas H. Baum ,  Gautam Bhandari ,  Chongying Xu

IPC分类号： C07F108

CPC分类号： C23C16/18 ,  C07C229/76 ,  C07C2601/18

摘要： Copper precursors of the formula (I): wherein: Cu is Cu(I) or Cu(II); x is an integer having a value of from 0 to 4; each of R, R′ and R″ may be the same as or different from one another and each is independently selected from the group consisting of H, C1-C6 alky), C1-C6 perfluoroalkyl and C6-C10 aryl; when Cu is Cu(I), A is a Lewis base; when Cu is Cu(II), A is: wherein x, R, R′ and R″ are as specified above.

摘要翻译： 式（I）的铜前体：其中：Cu是Cu（I）或Cu（II）; x是0至4的整数; R，R'和R“可以相同 各自独立地选自H，C 1 -C 6烷基），C 1 -C 6全氟烷基和C 6 -C 10芳基;当Cu是Cu（I）时，A是路易斯碱;当Cu 是Cu（II），A是：其中x，R，R'和R“如上所述。

公开(公告)号：US06767830B2

公开(公告)日：2004-07-27

申请号：US10213669

申请日：2002-08-07

申请人： Ziyun Wang ,  Chongying Xu ,  Thomas H. Baum ,  Michael A. Todd ,  Niamh McMahon

发明人： Ziyun Wang ,  Chongying Xu ,  Thomas H. Baum ,  Michael A. Todd ,  Niamh McMahon

IPC分类号： H01L2144

CPC分类号： C23C16/301 ,  C07F9/90 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02576 ,  H01L21/0262

摘要： A volatile solid-source novel antimony precursor, Br2SbCH3, that may be utilized in semiconductor processing chambers for depositing antimony on a substrate by deposition methods, e.g., chemical vapor deposition, ion implantation, molecular beam epitaxy, diffusion and rapid thermal processing. The novel antimony compound of the invention is synthesized by combining tribromide antimony with trimethylantimony under heating conditions that form a Br2SbCH3 crystalline product.

摘要翻译： 可用于半导体处理室中的挥发性固体源新型锑前体Br2SbCH3，用于通过诸如化学气相沉积，离子注入，分子束外延，扩散和快速热处理的沉积方法在衬底上沉积锑。 本发明的新型锑化合物是通过在形成Br2SbCH3结晶产物的加热条件下将三溴化锑与三甲基锑结合而合成的。

公开(公告)号：US06660331B2

公开(公告)日：2003-12-09

申请号：US10010262

申请日：2001-12-07

申请人： Bryan C. Hendrix ,  Thomas H. Baum ,  Debra Desrochers Christos ,  Jeffrey F. Roeder

发明人： Bryan C. Hendrix ,  Thomas H. Baum ,  Debra Desrochers Christos ,  Jeffrey F. Roeder

IPC分类号： C23C1640

CPC分类号： C23C16/409 ,  C07F9/94 ,  Y10S427/101

摘要： A solvent composition useful for liquid delivery MOCVD, comprising toluene and a Lewis base, wherein toluene is present at a concentration of from about 75% to about 98% by volume, based on the total volume of toluene and the Lewis base. Such solvent composition is usefully employed to dissolve or suspend precursors therein for liquid delivery MOCVD, e.g., MOCVD of ferroelectric material films such as SBT.

公开(公告)号：US06596236B2

公开(公告)日：2003-07-22

申请号：US09828115

申请日：2001-04-06

申请人： Frank DiMeo, Jr. ,  Thomas H. Baum

发明人： Frank DiMeo, Jr. ,  Thomas H. Baum

IPC分类号： G01N700

CPC分类号： G01N21/783 ,  G01N21/59 ,  G01N27/124 ,  G01N27/128 ,  G01N33/0014 ,  G01N33/005 ,  G01N2291/02863 ,  Y10T436/175383 ,  Y10T436/22

摘要： The present invention provides a hydrogen sensor including a thin film sensor element formed by metal organic chemical vapor deposition (MOCVD) or physical vapor deposition (PVD), on a micro-hotplate structure. The thin film sensor element includes a film of a hydrogen-interactive metal film that reversibly interacts with hydrogen to provide a correspondingly altered response characteristic, such as optical transmissivity, electrical conductance, electrical resistance, electrical capacitance, magneto resistance, photoconductivity, etc., relative to the response characteristic of the film in the absence of hydrogen. The hydrogen-interactive metal film may be overcoated with a thin film hydrogen-permeable barrier layer to protect the hydrogen-interactive film from deleterious interaction with non-hydrogen species. The hydrogen permeable barrier may comprise species to scavenge oxygen and other like species. The hydrogen sensor of the invention may be usefully employed for the detection of hydrogen in an environment susceptible to the incursion or generation of hydrogen and may be conveniently configured as a hand-held apparatus.

摘要翻译： 本发明提供一种氢传感器，其包括在微电镀板结构上由金属有机化学气相沉积（MOCVD）或物理气相沉积（PVD）形成的薄膜传感器元件。 薄膜传感器元件包括与氢可逆地相互作用以提供相应改变的响应特性（例如光透射率，电导率，电阻，电容，磁阻，光电导等）的氢相互作用金属膜的膜， 相对于不存在氢气时膜的响应特性。 氢相互作用金属膜可以用薄膜氢可渗透阻挡层进行外涂，以保护氢相互作用膜免受与非氢物质的有害相互作用。 氢可渗透屏障可以包括清除氧气和其它类似物质的物质。 本发明的氢传感器可有效地用于在易于入侵或产生氢的环境中检测氢气，并且可以方便地配置为手持设备。

公开(公告)号：US06589329B1

公开(公告)日：2003-07-08

申请号：US09522102

申请日：2000-03-09

申请人： Thomas H. Baum ,  Chongying Xu

发明人： Thomas H. Baum ,  Chongying Xu

IPC分类号： C23C1616

CPC分类号： C23C16/18 ,  C07F1/08 ,  C07F7/0803

摘要： Compositions useful for chemical vapor delivery (CVD) formation of copper layers in semiconductor integrated circuits, e.g., interconnect metallization in semiconductor device structures, as an adhesive seed layer for plating, for the deposition of a thin-film recording head or for circuitization of packaging components. The copper precursor formulation may include one or more copper precursors, e.g., a precursor of the formula hfac(Cu)L where L is a low-cost ligand such as an alkene and/or alkyne such as [(hfac)Cu]2 (DMDVS). The formulation may include in addition to the copper precursor(s) one or more low-cost ligand species such as alkenes, alkynes, dienes and combinations thereof, to increase thermal stability of the formulation and provide enhanced vaporization properties for CVD.

摘要翻译： 可用于半导体集成电路中铜层的化学气相传输（CVD）形成的组合物，例如半导体器件结构中的互连金属化，用于电镀的粘合种子层，用于沉积薄膜记录头或用于封装的电路化 组件。 铜前体制剂可以包括一种或多种铜前体，例如式hfac（Cu）L的前体，其中L是低成本配体如烯烃和/或炔烃，例如[（hfac）Cu] 2（ DMDVS）。 除了铜前体之外，配方可以包括一种或多种低成本配体物质，例如烯烃，炔，二烯及其组合，以增加制剂的热稳定性并提供CVD的增强的气化性质。

公开(公告)号：US06458984B1

公开(公告)日：2002-10-01

申请号：US09540584

申请日：2000-03-31

申请人： Thomas H. Baum ,  Chongying Xu ,  Frank R. Hedges ,  David Daniel Bernhard ,  Brian L. Benac ,  Scott L. Battle ,  John M. Lansdown

发明人： Thomas H. Baum ,  Chongying Xu ,  Frank R. Hedges ,  David Daniel Bernhard ,  Brian L. Benac ,  Scott L. Battle ,  John M. Lansdown

IPC分类号： C07F704

CPC分类号： C07F7/045 ,  C07F7/20

摘要： A method of purifying tetraethylorthosilicate (TEOS) to remove boron impurities therefrom, and a related method of analyzing TEOS to determine concentration of boron impurities therein.

摘要翻译： 纯化原硅酸四乙酯（TEOS）以除去硼杂质的方法，以及分析TEOS以确定其中硼杂质浓度的相关方法。

公开(公告)号：US06338873B1

公开(公告)日：2002-01-15

申请号：US09610822

申请日：2000-07-06

申请人： Witold Paw ,  Thomas H. Baum

发明人： Witold Paw ,  Thomas H. Baum

IPC分类号： C23C1600

CPC分类号： C07F3/003 ,  C23C16/408 ,  C23C16/409

摘要： Novel Group II metal MOCVD precursor compositions are described having utility for MOCVD of the corresponding Group II metal-containing films. The complexes are Group II metal &bgr;-diketonate Lewis base adducts having ligands such as: (i) amines bearing terminal NH2 groups; (ii) imine ligands formed as amine (i)/carbonyl reaction products; (iii) combination of two or more of the foregoing ligands (i)-(ii), and (iv) combination of one or more of the foregoing ligands (i)-(ii) with one or more other ligands or solvents. The source reagent complexes of barium and strontium are usefully employed in the formation of barium strontium titanate and other Group II doped thin-films on substrates for microelectronic device applications, such as integrated circuits, ferroelectric memories, switches, radiation detectors, thin-film capacitors, microelectromechanical structures (MEMS) and holographic storage media.

摘要翻译： 描述了新的第II族金属MOCVD前体组合物用于相应的含II族金属膜的MOCVD。 络合物是具有配体的II族金属β-二酮酸酯路易斯碱加成物，其具有：（i）带有末端NH 2基团的胺; （ii）以胺（i）/羰基反应产物形成的亚胺配体; （iii）上述配体（i） - （ii）中的两种或更多种的组合，和（iv）一种或多种前述配体（i） - （ii）与一种或多种其它配体或溶剂的组合。 钡和锶的源试剂络合物可用于形成钛酸锶钡和其他第II类掺杂薄膜在用于微电子器件应用的衬底上，例如集成电路，铁电存储器，开关，辐射探测器，薄膜电容器 ，微机电结构（MEMS）和全息存储介质。