公开(公告)号：US20080166560A1

公开(公告)日：2008-07-10

申请号：US11322180

申请日：2005-12-28

Applicant: Hiroyuki Akinaga ,  Yasuyuki Semba ,  Hiroshi Yokoyama ,  Masatoshi Yasutake ,  Hiromi Kuramochi

Inventor： Hiroyuki Akinaga ,  Yasuyuki Semba ,  Hiroshi Yokoyama ,  Masatoshi Yasutake ,  Hiromi Kuramochi

IPC: B32B9/00

CPC classification number: G01Q60/56 ,  G01Q70/12 ,  Y10S977/84 ,  Y10S977/842 ,  Y10T428/30

Abstract: The present invention provides a probe for a scanning magnetic force microscope having a resolution sufficient to allow observation of a magnetic storage medium with 1200 kFCI or higher recording densities, a method for producing the probe, and a method for forming a ferromagnetic alloy film on a carbon nanotube. In the context of the present invention, the probe for a scanning magnetic force microscope comprises a carbon nanotube whose surface is at least in part coated with a ferromagnetic alloy film consisting of any one of a Co—Fe alloy and a Co—Ni alloy, wherein the arithmetic mean roughness (Ra 10 μm) of the surface of the ferromagnetic alloy film is controlled to 1.15 nm or less. A method for producing such probes for a scanning magnetic force microscope and a method for forming such a ferromagnetic alloy film on a carbon nanotube, so as to achieve such mean surface roughness by controlling the growth rate of the ferromagnetic alloy film within the range of 1.0 to 2.5 nm/min, is also disclosed.

Abstract translation: 本发明提供了一种扫描磁力显微镜的探针，其具有足以允许观察具有1200kFCI或更高记录密度的磁存储介质的分辨率的扫描磁力显微镜，该探针的制造方法以及用于形成铁磁性合金膜的方法 碳纳米管。 在本发明的上下文中，用于扫描磁力显微镜的探针包括其表面至少部分地涂覆有由Co-Fe合金和Co-Ni合金中的任一种构成的铁磁合金膜的碳纳米管， 其中铁磁性合金膜的表面的算术平均粗糙度（Ra 10 mum）被控制在1.15nm以下。 一种用于扫描磁力显微镜的这种探针的制造方法以及在碳纳米管上形成这种铁磁性合金膜的方法，以便通过将铁磁性合金膜的生长速度控制在1.0的范围内来实现这种平均表面粗糙度 至2.5nm / min。

公开(公告)号：US07289597B2

公开(公告)日：2007-10-30

申请号：US11389447

申请日：2006-03-24

Applicant: Norio Sasayama ,  Akikazu Okawara ,  Satoshi Nakayama

Inventor： Norio Sasayama ,  Akikazu Okawara ,  Satoshi Nakayama

IPC: G21K7/00

CPC classification number: G01N23/2252 ,  H01J37/244 ,  H01J37/256 ,  H01J37/28 ,  H01J2237/24415 ,  H01J2237/2445

Abstract: An optical axis adjusting mechanism for an X-ray lens, an X-ray analytical instrument and a method of adjusting an optical axis of an X-ray lens, capable of enhancing detection efficiency of an X-ray while preventing degradation of the device performance are provided. An optical axis adjusting mechanism for an X-ray lens to be implemented in an X-ray analytical instrument, includes an exit side adjusting mechanism for adjusting an exit side focal point of the X-ray lens to focus on an X-ray detector, and an entrance side adjusting mechanism for adjusting an entrance side focal point of the X-ray lens to focus on an analytical point of a sample, and the entrance side adjusting mechanism is disposed with a greater distance from the X-ray lens than a distance between the exit side adjusting mechanism and the X-ray lens.

Abstract translation: 用于X射线透镜的光轴调节机构，X射线分析仪器和调整X射线透镜的光轴的方法，能够提高X射线透镜的检测效率，同时防止器件性能的劣化 被提供。 在X射线分析仪器中实施的用于X射线透镜的光轴调节机构包括：出射侧调节机构，用于调整X射线透镜的出射侧焦点以聚焦在X射线检测器上; 以及用于调整X射线透镜的入射侧焦点以聚焦在样品的分析点上的入口侧调节机构，并且入射侧调节机构设置成距离X射线透镜更远的距离 在出射侧调节机构和X射线透镜之间。

公开(公告)号：US07278299B2

公开(公告)日：2007-10-09

申请号：US11135075

申请日：2005-05-23

Applicant: Osamu Takaoka ,  Masatoshi Yasutake ,  Shigeru Wakiyama ,  Naoya Watanabe

Inventor： Osamu Takaoka ,  Masatoshi Yasutake ,  Shigeru Wakiyama ,  Naoya Watanabe

IPC: G01B5/28 ,  B23Q17/00

CPC classification number: G01Q30/06 ,  G01Q40/00 ,  G01Q80/00 ,  G03F1/72 ,  G03F7/0002 ,  Y10T29/49004 ,  Y10T29/49771 ,  Y10T29/49822 ,  Y10T29/49824

Abstract: An indentation is formed by thrusting a probe of a scanning probe microscope for processing, which has a vertical surface or a vertical ridge and is harder than sample material, into sample for measuring the indentation. A high-fidelity AFM observation is performed on the shape of the formed indentation with a thin probe with high aspect ratio, the direction of the vertical surface or the vertical ridge is inspected, and the angle error θ is stored. By rotating a sample stage by an angle corresponding to the measured mounting angle error θ of the probe, the mounting angle error of the probe is corrected in advance.

Abstract translation: 通过将具有垂直表面或垂直脊并且比样品材料更硬的扫描探针显微镜的探针推入用于测量凹陷的样品中来形成凹陷。 使用具有高纵横比的薄探针对垂直表面或垂直脊的方向进行形成的压痕的形状的高保真AFM观察，并且存储角度误差θ。 通过将样品台旋转与测量的测量的安装角度误差θ相对应的角度，预先校正探针的安装角度误差。

公开(公告)号：US07235783B2

公开(公告)日：2007-06-26

申请号：US11048962

申请日：2005-02-02

Applicant: Takashi Kaito

Inventor： Takashi Kaito

IPC: H01J37/30

CPC classification number: H01J37/3056 ,  H01J2237/31744

Abstract: There are provided a gas blowing nozzle adapted such that, by the fact that a groove-like notch structure has been provided in a side to which a beam IB comes flying in a nozzle tip part of a gas gun used on the occasion of a beam assist deposition or a beam assist etching, the beam IB can pass through an inside of the notch structure, and a charged particle beam apparatus having the gas blowing nozzle 11 as well as a working method.

Abstract translation: 提供了一种气体喷射喷嘴，其适于使得通过在梁1B的一侧中设置有槽状切口结构的事实在梁的使用中使用的气枪的喷嘴尖端部分中飞行 辅助沉积或光束辅助蚀刻，光束IB可以穿过凹口结构的内部，以及具有气体喷射喷嘴11的带电粒子束装置以及工作方法。

公开(公告)号：US07234861B2

公开(公告)日：2007-06-26

申请号：US10929859

申请日：2004-08-30

Applicant: Shinya Nishimura

Inventor： Shinya Nishimura

IPC: G01K17/00 ,  G01N25/00

CPC classification number: G01N25/4826 ,  G01K17/00 ,  G01N25/4866

Abstract: A thermal analyzer has a heat sink for storing therein a specimen, a heater for heating the heat sink and the specimen, at superheating temperatures, and a cooling mechanism thermally connected to the heat sink for cooling the heat sink and the specimen. The cooling mechanism is comprised of a tubular member having an inlet port for introducing a cooling gas into the tubular member and an outlet port for discharging the cooling gas from the tubular member. A tubular extension is thermaly connected to and extends from the tubular member. An electric cooling device has a cooling head connected to the tubular extension for cooling the cooling mechanism.

Abstract translation: 热分析仪具有用于在其中存储样品的散热器，用于在过热温度下加热散热器和样品的加热器，以及与散热器热连接以冷却散热器和样品的冷却机构。 冷却机构包括具有用于将冷却气体引入管状部件的入口端口和用于从管状部件排出冷却气体的出口的管状部件。 管状延伸部与管状构件热连接并从管状构件延伸。 电冷却装置具有连接到管状延伸部的冷却头，用于冷却冷却机构。

公开(公告)号：US20060150720A1

公开(公告)日：2006-07-13

申请号：US11145869

申请日：2005-06-06

Applicant: Yoshikazu Nakayama ,  Takashi Okawa ,  Shigenobu Yamanaka ,  Akio Harada ,  Masatoshi Yasutake ,  Yoshiharu Shirakawabe

Inventor： Yoshikazu Nakayama ,  Takashi Okawa ,  Shigenobu Yamanaka ,  Akio Harada ,  Masatoshi Yasutake ,  Yoshiharu Shirakawabe

IPC: G01B5/28

CPC classification number: G01Q60/04 ,  G01Q60/08 ,  G01Q60/16 ,  G01Q60/38 ,  G01Q60/54 ,  G01Q60/56 ,  G01Q70/12

Abstract: A scanning microscope probe in which a palladium covering film is formed on the surface of the protruding portion of a cantilever, and the base end portion of a nanotube is disposed in contact with the palladium covering film with the tip end portion of the nanotube protruding to the outside, thus allowing the tip end to be used as a probe needle end for detecting signals. A coating film is formed to cover all or part of the surface of this base end portion, and the nanotube is thus firmly fastened to the cantilever. Since the base end portion adheres tightly to the palladium covering film, both of them are electrically continuous. This palladium covering film allows, as an electrode film, the application of a voltage to the nanotube or the passage of an electric current through the nanotube, showing also good adhesion to the nanotube and cantilever.

Abstract translation: 扫描显微镜探针，其中在悬臂的突出部分的表面上形成钯覆盖膜，并且纳米管的基端部设置成与钯覆盖膜接触，其中纳米管的末端部突出到 从而允许尖端用作检测信号的探针针端。 形成涂膜以覆盖该基端部的全部或部分表面，并且因此将纳米管牢固地固定在悬臂上。 由于基端部紧密地附着在钯覆盖膜上，所以两者都是电连续的。 这种钯覆膜可以作为电极膜，对纳米管施加电压或使电流通过纳米管，对纳米管和悬臂也表现出良好的粘附性。

公开(公告)号：US07066015B2

公开(公告)日：2006-06-27

申请号：US11136970

申请日：2005-05-25

Applicant: Akihiko Honma

Inventor： Akihiko Honma

IPC: G01N13/16

CPC classification number: G01Q30/06 ,  Y10S977/852

Abstract: There is provided a scanning probe microscope capable of simply and accurately confirming whether or not a sample shape satisfies specified conditions. A pseudo reference image Sref1 comprises a pair of reference line profiles Lref1 and Lref2 arranged apart form each other in parallel. An operator moves and rotates the position of the pseudo reference image Sref1 on a screen so that a sample shape line profile fits between the reference line profiles Lref1 and Lref2 of the pseudo reference image Sref1. If it is possible to fit the line profile of the sample shape between the reference line profiles Lref1 and Lref2, it is determined that the sample shape is in spec, while if it is not possible to fit the line profile of the sample shape between the reference line profiles Lref1 and Lref2, no matter how the pseudo reference image Sref1 is moved and rotated, it is determined that the sample shape is out of spec.

Abstract translation: 提供了能够简单准确地确认样品形状是否满足规定条件的扫描探针显微镜。 伪参考图像Sref 1包括彼此并行布置的一对参考线轮廓Lref 1和Lref 2。 操作者将伪参考图像Sref 1的位置移动并旋转到屏幕上，使得样本形状线轮廓拟合在伪参考图像Sref 1的参考线轮廓Lref 1和Lref 2之间。 如果可以将样品形状的线轮廓拟合在参考线轮廓Lref 1和Lref 2之间，则确定样品形状是规格的，而如果不可能将样品形状的线轮廓拟合 在参考线轮廓Lref 1和Lref 2之间，无论伪参考图像Sref 1如何被移动和旋转，都确定样本形状不合格。

公开(公告)号：US07060397B2

公开(公告)日：2006-06-13

申请号：US10452541

申请日：2003-06-02

Applicant: Yo Yamamoto ,  Kouji Iwasaki ,  Masamichi Oi

Inventor： Yo Yamamoto ,  Kouji Iwasaki ,  Masamichi Oi

IPC: G03F9/00 ,  G03C5/00

CPC classification number: G03F1/20 ,  G03F1/74 ,  G03F1/82 ,  H01J2237/31742 ,  Y10S430/143

Abstract: A method of correcting a defective portion of an exposure window in a lithography mask, such as an EPL mask, includes a first step of irradiating a defective portion of the exposure window using a charge particle beam to perform correction processing, and a second step of irradiating another portion of the exposure window with the charged particle beam to eliminate attached matter therefrom, the attached matter consisting of particles ejected from the defective portion of the exposure window as a result of irradiation with the charged particle beam during the first step. The first step and the second step are sequentially repeated N times, wherein N is an integer of 2 or more, to thereby reduce the time needed for eliminating the attached matter.

Abstract translation: 一种校正诸如EPL掩模的光刻掩模中的曝光窗口的缺陷部分的方法包括：第一步骤，使用电荷粒子束照射曝光窗口的缺陷部分以执行校正处理，第二步骤 用带电粒子束照射曝光窗口的另一部分以从其中除去附着物，所述附着物质由在第一步骤期间被带电粒子束的照射而从曝光窗口的缺陷部分喷出的颗粒组成。 第一步骤和第二步骤依次重复N次，其中N为2以上的整数，从而减少了除去附着物所需的时间。

公开(公告)号：US07026607B2

公开(公告)日：2006-04-11

申请号：US10828002

申请日：2004-04-20

Applicant: Itaru Kitajima ,  Masatsugu Shigeno

Inventor： Itaru Kitajima ,  Masatsugu Shigeno

IPC: G01N23/00 ,  G21K7/00 ,  H01J3/14 ,  H01J40/14 ,  H01J5/16

CPC classification number: G01Q10/06 ,  G01Q40/00

Abstract: A scanning probe microscope has a scanner and a mounting unit for supporting the scanner. An identifying mark is disposed on a part of the scanner for representing preselected information corresponding to the scanner. The mounting unit has an interpreting device for interpreting the preselected information represented by the identifying mark. A setting device sets in a controller, for controlling the scanning probe microscope, parameter information corresponding to the scanner probe microscope, parameter information corresponding interpreted by the interpreting device.

Abstract translation: 扫描探针显微镜具有扫描器和用于支撑扫描器的安装单元。 识别标记设置在扫描器的一部分上，用于表示对应于扫描仪的预选信息。 安装单元具有用于解释由识别标记表示的预选信息的解释装置。 设置在控制器中的控制器，用于控制扫描探针显微镜，对应于扫描仪探针显微镜的参数信息，由解释装置解释的参数信息。

公开(公告)号：US07022996B2

公开(公告)日：2006-04-04

申请号：US10443225

申请日：2003-05-22

Applicant: Yoshiki Matoba ,  Kazuhiko Kimura

Inventor： Yoshiki Matoba ,  Kazuhiko Kimura

IPC: G01T1/24

CPC classification number: G01T3/00 ,  G01T1/242 ,  G01T1/244

Abstract: In order to provide a radiation detector capable of implementing measurements with a good energy resolution and a high detection efficiency over a broad energy range using a single detector, in the present invention, a radiation detecting element composed of Si semiconductor and the radiation detecting element composed of CdZnTe or CdTe semiconductor are lined up as two layers longitudinally. The radiation detecting element composed of Si semiconductor is taken as a first layer at the side of incidence of the radiation and the radiation detecting element composed of CdZnTe or CdTe semiconductor is taken as a second layer.