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    Direct patterning of silicon by photoelectrochemical etching
    132.
    发明申请
    Direct patterning of silicon by photoelectrochemical etching 有权
    通过光电化学蚀刻直接图案化硅

    公开(公告)号：US20050009374A1

    公开(公告)日：2005-01-13

    申请号：US10838859

    申请日：2004-05-04

    Applicant: Jun Gao ,  Michael Sailor ,  Sangeeta Bhatia ,  Christopher Flaim

    Inventor： Jun Gao ,  Michael Sailor ,  Sangeeta Bhatia ,  Christopher Flaim

    IPC: B81C1/00 ,  C25F3/12 ,  C25F3/14 ,  H01L21/26 ,  H01L21/3063

    CPC classification number: B81C1/00515 ,  B81C2201/0114 ,  B81C2201/0115 ,  C25F3/12 ,  C25F3/14 ,  H01L21/3063

    Abstract: The invention is directed to methods for direct patterning of silicon. The invention provides the ability to fabricate complex surfaces in silicon with three dimensional features of high resolution and complex detail. The invention is suitable, for example, for use in soft lithography as embodiments of the invention can quickly create a master for use in soft lithography. In an embodiment of the invention, electrochemical etching of silicon, such as a silicon wafer, for example, is conducted while at least a portion of the silicon surface is exposed to an optical pattern. The etching creates porous silicon in the substrate, and removal of the porous silicon layer leaves a three-dimensional structure correlating to the optical pattern.

    Abstract translation: 本发明涉及直接图案化硅的方法。 本发明提供了在硅中制造具有高分辨率和复杂细节的三维特征的复杂表面的能力。 本发明适用于例如在软光刻中使用，因为本发明的实施例可以快速地创建用于软光刻的母版。 在本发明的一个实施例中，例如硅的电化学蚀刻被进行，同时硅表面的至少一部分暴露于光学图案。 蚀刻在衬底中产生多孔硅，并且去除多孔硅层留下与光学图案相关的三维结构。

    Method for forming a cavity structure on soi substrate and cavity structure formed on soi substrate
    133.
    发明申请
    Method for forming a cavity structure on soi substrate and cavity structure formed on soi substrate 有权
    在基体上形成的基体和腔结构上的空腔结构的形成方法

    公开(公告)号：US20040248376A1

    公开(公告)日：2004-12-09

    申请号：US10491193

    申请日：2004-03-31

    Inventor： Jyrki Kiihamaki

    IPC: H01L021/46

    CPC classification number: B81C1/00047 ,  B81C1/00412 ,  B81C2201/0115 ,  B81C2203/0145 ,  H01L21/76286

    Abstract: The present publication discloses a method for forming cavities in prefabricated silicon wafers comprising a first silicon layer (1), a second monocrystalline silicon layer, or a so-called structural layer (3), oriented substantially parallel with said first silicon layer (1) and an insulating layer (2) situated between said first and second layers (1, 3). According to the method, in at least one of the conducting silicon layers (1, 3) are fabricated windows (4) extending through the thickness of the layer, and cavities are etched in the insulating layer (2) by means of etchants passed to the layer via said fabricated windows (4). According to the invention, subsequent to the fabrication step of the windows (4) and prior to the etching step, a thin porous layer (5) is formed on the surface to be processed such that the etchants can be passed through said porous layer into said cavities (6) being etched and, after the cavities (6) are etched ready, at least one supplementary layer (7) is deposited in order to render to the material of said porous layer impermeable to gases.

    Abstract translation: 本公开公开了一种用于在预制硅晶片中形成空腔的方法，其包括基本上平行于所述第一硅层（1）取向的第一硅层（1），第二单晶硅层或所谓的结构层（3） 和位于所述第一和第二层（1,3）之间的绝缘层（2）。 根据该方法，至少一个导电硅层（1,3）是延伸穿过该层的厚度的制造窗（4），并且通过传递给绝缘层（2）的蚀刻剂在绝缘层（2）中蚀刻空腔 所述层经由所述制造的窗口（4）。 根据本发明，在窗口（4）的制造步骤之后并且在蚀刻步骤之前，在待加工的表面上形成薄的多孔层（5），使得蚀刻剂可以通过所述多孔层进入 所述腔（6）被蚀刻，并且在空腔（6）被蚀刻就绪之后，沉积至少一个辅助层（7），以使所述多孔层的材料不能透过气体。

    Method for the fabrication of suspended porous silicon microstructures and application in gas sensors
    135.
    发明申请
    Method for the fabrication of suspended porous silicon microstructures and application in gas sensors 审中-公开
    用于制造悬浮多孔硅微结构的方法和在气体传感器中的应用

    公开(公告)号：US20040195096A1

    公开(公告)日：2004-10-07

    申请号：US10485940

    申请日：2004-01-30

    Inventor： Christos Tsamis ,  Angeliki Tserepi ,  Androula G Nassiopoulou

    IPC: G01N027/26

    CPC classification number: H05B3/265 ,  B81B2201/0278 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81C1/00682 ,  B81C1/0069 ,  B81C2201/0115 ,  G01F1/6845 ,  G01N27/12 ,  G01N27/16 ,  G01N27/18

    Abstract: This invention provides a front side silicon micromachining process for the fabrication of suspended Porous Silicon membranes in the form of bridges or cantilevers and of thermal sensor devices employing these membranes. The fabrication of the suspended Porous Silicon membranes comprises the following steps: (a) formation of a Porous Silicon layer (2) in, at least one, predefined area of a Silicon substrate (1), (b) definition of etch windows (5) around or inside said Porous Silicon layer (2) using standard photolithography and (c) selective etching of the silicon substrate (1), underneath the Porous Silicon layer (2), by using dry etching techniques to provide release of the Porous Silicon membrane and to form a cavity (6) under the said Porous Silicon layer. Furthermore, the present invention provides a method for the fabrication of thermal sensors based on Porous Silicon membranes with minimal thermal losses, since the proposed methodology combines the advantages that result from the low thermal conductivity of Porous Silicon and the use of suspended membranes. Moreover, the front-side micromachining process proposed in the present invention simplifies the fabrication process. Various types of thermal sensor devices, such as calorimetric-type gas sensors, conductometric type gas sensors and thermal conductivity sensors are described utilizing the proposed methodology.

    Abstract translation: 本发明提供了前桥硅微加工工艺，用于制造桥梁或悬臂形式的悬浮多孔硅膜以及采用这些膜的热传感器装置。 悬浮的多孔硅膜的制造包括以下步骤：（a）在硅衬底（1）的至少一个预定区域中形成多孔硅层（2），（b）蚀刻窗口（5） ）使用标准光刻法和（c）在多孔硅层（2）下方的硅衬底（1）的选择性蚀刻，通过使用干蚀刻技术提供多孔硅膜（2）的多孔硅膜 并在所述多孔硅层下方形成空腔（6）。 此外，本发明提供了一种用于制造基于具有最小热损失的多孔硅膜的热传感器的方法，因为所提出的方法结合了多孔硅的低热导率和悬浮膜的使用所产生的优点。 此外，本发明中提出的前侧微加工工艺简化了制造工艺。 使用所提出的方法来描述各种类型的热传感器装置，例如量热式气体传感器，电导型气体传感器和导热传感器。

    Micromechanical component
    137.
    发明申请
    Micromechanical component 失效
    微机械部件

    公开(公告)号：US20040021184A1

    公开(公告)日：2004-02-05

    申请号：US10381307

    申请日：2003-03-24

    Inventor： Hubert Benzel ,  Heribert Weber ,  Michael Bauer ,  Hans Artmann ,  Thorsten Pannek ,  Frank Schaefer ,  Christian Krummel

    IPC: H01L027/14

    CPC classification number: B81B3/0081 ,  B81B2203/0127 ,  B81C2201/0115 ,  G01N27/227

    Abstract: A micromechanical component is proposed having a substrate (10) and a cover layer (40) deposited on the substrate (10), underneath the cover layer (40), a region (30; 30null) of porous material being provided which mechanically supports and thermally insulates the cover layer (40). On the cover layer (40), a heating device (70) is provided to heat the cover layer (40) above the region (30; 30null); and above the region (30; 30null), a detector (200, 200null) is provided to measure an electric property of a heated medium (150) provided above the region (30; 30null) on the cover layer (40).

    Abstract translation: 提出了一种微机械部件，其具有在覆盖层（40）下面沉积有在衬底（10）上的衬底（10）和覆盖层（40），提供多孔材料的区域（30; 30'），其机械地支撑 并使覆盖层（40）热绝缘。 在覆盖层（40）上，设置加热装置（70）以加热区域（30; 30'）上方的覆盖层（40）; 并且在所述区域（30; 30'）上方提供检测器（200,200'）以测量设置在覆盖层（40）上的区域（30; 30'）上方的加热介质（150）的电性质， 。

    Micromechanical component and corresponing production method
    138.
    发明申请
    Micromechanical component and corresponing production method 失效
    微机械部件和对应生产方法

    公开(公告)号：US20030116813A1

    公开(公告)日：2003-06-26

    申请号：US10169464

    申请日：2002-10-28

    Inventor： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

    IPC: H01L021/00 ,  H01L027/14 ,  H01L029/84

    CPC classification number: B81C1/00595 ,  B81B2201/0235 ,  B81B2201/036 ,  B81C2201/0114 ,  B81C2201/0115 ,  B81C2201/0136 ,  B81C2203/0136

    Abstract: A micromechanical component having a substrate (10) made from a substrate material having a first doping type (p), a micromechanical functional structure provided in the substrate (10) and a cover layer to at least partially cover the micromechanical functional structure. The micromechanical functional structure has zones (15; 15a; 15b; 15c; 730; 740; 830) made from the substrate material having a second doping type (n), the zones being at least partially surrounded by a cavity (50; 50e-f), and the cover layer has a porous layer (30) made from the substrate material.

    Abstract translation: 一种具有由具有第一掺杂型（p）的衬底材料制成的衬底（10）的微机械部件，以及设置在衬底（10）中的微机械功能结构和覆盖层，以至少部分地覆盖微机械功能结构。 所述微机械功能结构具有由具有第二掺杂型（n）的所述衬底材料制成的区域（15; 15a; 15b; 15c; 730; 740; 830），所述区域至少部分地被空腔（50; 50e- f），并且覆盖层具有由基板材料制成的多孔层（30）。

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