公开(公告)号：US20110290638A1

公开(公告)日：2011-12-01

申请号：US13168560

申请日：2011-06-24

申请人： Hiroshi Torii ,  Ge Xu

发明人： Hiroshi Torii ,  Ge Xu

IPC分类号： C23C14/34

CPC分类号： G11B5/851 ,  C23C14/352 ,  H01J37/3405 ,  H01J37/3414 ,  H01J37/3444

摘要： The present invention provides a sputter device and a method of manufacturing a magnetic storage medium capable of forming a buried layer with higher production efficiency in manufacturing a magnetic recording medium. In an embodiment of the present invention, cathodes in opposition to each other with a substrate (201) sandwiched in between are arranged and the phase of high-frequency power to be applied to each cathode is made the same. At this time, it is preferable to reduce the distance between each cathode and the substrate (201). Further, it is also preferable to perform deposition of a buried layer while attracting positive ions in plasma to the substrate (201) by an attracting electric field.

摘要翻译： 本发明提供一种溅射装置和制造能够在制造磁记录介质时能够形成具有较高生产效率的掩埋层的磁存储介质的方法。 在本发明的一个实施例中，布置了彼此相对的阴极和夹在其间的基板（201），并且施加到每个阴极的高频电力的相位相同。 此时，优选减少阴极和基板（201）之间的距离。 此外，还优选通过吸引电场在衬底（201）吸引等离子体中的正离子的同时进行掩埋层的沉积。

公开(公告)号：US20110147206A1

公开(公告)日：2011-06-23

申请号：US13060376

申请日：2009-08-13

申请人： Tadao Okimoto ,  Hiroshi Tamagaki

发明人： Tadao Okimoto ,  Hiroshi Tamagaki

IPC分类号： C23C14/34

CPC分类号： C23C14/3464 ,  C23C14/3485 ,  H01J37/32027 ,  H01J37/34 ,  H01J37/3444

摘要： In a sputter device (1), power of a DC power source (20) is sequentially distributed and supplied in a time division pulse state to a plurality of sputter evaporation sources (4). A power source (10) provided to each of the sputter evaporation sources (4) supplies continuous power to each of the sputter evaporation sources (4). The sputter device (1) having the configuration requires no DC pulse power source to be provided to each of the sputter evaporation sources (4), which reduces the device cost.

摘要翻译： 在溅射装置（1）中，直流电源（20）的功率被顺序分配并以时分脉冲状态提供给多个溅射蒸发源（4）。 提供给每个溅射蒸发源（4）的电源（10）为每个溅射蒸发源（4）提供连续的功率。 具有该构造的溅射装置（1）不需要将DC脉冲电源提供给每个溅射蒸发源（4），这降低了装置成本。

公开(公告)号：US20110120860A1

公开(公告)日：2011-05-26

申请号：US12989692

申请日：2009-05-20

申请人： Yoshikuni Horishita ,  Atsushi Ono ,  Wataru Oshima

发明人： Yoshikuni Horishita ,  Atsushi Ono ,  Wataru Oshima

IPC分类号： C23C14/34 ,  H05H1/48

CPC分类号： H02M7/53871 ,  H01J37/3417 ,  H01J37/3429 ,  H01J37/3444 ,  H02M2001/007

摘要： A bipolar pulsed power supply which supplies power in a bipolar pulsed mode at a predetermined frequency to a pair of electrodes that come into contact with a plasma is arranged to reduce the switching loss of the switching elements in a bridge circuit, and also to attain a high durability without using high-performance switching elements. The bipolar pulsed power supply has: a bridge circuit constituted by switching elements SW1 through SW4 connected to positive and negative DC outputs from a DC power supply source; and a control means for controlling switching ON or OFF of each of the switching elements in the bridge circuit. An output-short-circuiting switching element SW0 is disposed between the positive and the negative DC outputs from the DC power supply source such that, in a short-circuited state of the output-short-circuiting switching element, each of the switching elements in the bridge circuit is switched by the control means.

摘要翻译： 以与预定频率相对的双极性脉冲模式的电力供给与等离子体接触的一对电极的双极脉冲电源被配置为减小桥式电路中的开关元件的开关损耗， 高耐用性，而不使用高性能开关元件。 双极脉冲电源具有：由直流电源连接到正，负直流输出的开关元件SW1〜SW4构成的桥接电路; 以及用于控制桥式电路中的每个开关元件的接通或断开的控制装置。 输出短路开关元件SW0设置在来自直流电源的正极和负极直流输出之间，使得在输出短路开关元件的短路状态下，每个开关元件 桥接电路由控制装置切换。

公开(公告)号：US20100213047A1

公开(公告)日：2010-08-26

申请号：US12727316

申请日：2010-03-19

申请人： Yoshinori Nagamine ,  Kanto Nakamura ,  Koji Tsunekawa

发明人： Yoshinori Nagamine ,  Kanto Nakamura ,  Koji Tsunekawa

IPC分类号： C23C14/34

CPC分类号： C23C14/50 ,  C23C14/081 ,  C23C14/225 ,  C23C14/345 ,  C23C14/3464 ,  C23C14/352 ,  C23C16/4586 ,  H01J37/3417 ,  H01J37/3438 ,  H01J37/3444 ,  H01L43/12

摘要： Provided is a high-quality magnetoresistive thin film by using a method of controlling self bias of a high-frequency sputtering device. In order to control the self bias for the substrate by adjusting a substrate potential, the high-frequency sputtering device according to the present invention includes: a chamber; evacuation means for evacuating the inside of the chamber; gas introduction means for supplying a gas into the chamber; a substrate holder provided with a substrate mounting table; rotation drive means capable of rotating the substrate holder; a sputtering cathode provided with a target mounting table and arranged such that the surface of the target mounting table is non-parallel to the surface of the substrate mounting table; an electrode disposed inside the substrate holder; and a variable impedance mechanism electrically connected to the electrode, for adjusting the substrate potential on the substrate holder.

摘要翻译： 通过使用控制高频溅射装置的自偏压的方法，提供了高质量的磁阻薄膜。 为了通过调整衬底电位来控制衬底的自偏压，根据本发明的高频溅射器件包括：腔室; 用于抽空腔室内部的排气装置; 气体引入装置，用于将气体供应到所述腔室中; 衬底保持器，其设置有衬底安装台; 旋转驱动装置，能够使基板保持架旋转; 设置有目标安装台的溅射阴极，并且被配置为使得所述目标安装台的表面不平行于所述基板安装台的表面; 设置在所述衬底保持器内的电极; 以及电连接到电极的可变阻抗机构，用于调节衬底保持器上的衬底电位。

公开(公告)号：US20100126855A1

公开(公告)日：2010-05-27

申请号：US12621144

申请日：2009-11-18

申请人： Hans-Juergen HEINRICH ,  Ulf SEYFERT ,  Goetz TESCHNER

发明人： Hans-Juergen HEINRICH ,  Ulf SEYFERT ,  Goetz TESCHNER

IPC分类号： C23C14/35

CPC分类号： H01J37/3405 ,  H01J37/3435 ,  H01J37/3444

摘要： To achieve an improved end block, in which heating by induction eddy currents, which may occur during AC sputtering, for example, is significantly reduced relative to known end blocks, an end block for a magnetron configuration having a rotating target comprises an end block housing having an attachment surface for attaching the end block on a support apparatus, a pivot bearing for rotatable mounting of the rotating target, and at least one current conduction apparatus which conducts current through the end block housing in operation of the end block. The end block housing is implemented so that each current path in the end block housing which encloses the current conduction apparatus has an interruption at at least one point.

摘要翻译： 为了实现改进的端块，其中例如在AC溅射期间可能发生的通过感应涡流的加热相对于已知的端块显着降低，具有旋转靶的磁控管构造的端块包括端块壳体 具有用于将端块安装在支撑装置上的附接表面，用于旋转靶的可旋转安装的枢转轴承，以及至少一个导流装置，其在端块的操作中通过端块壳体传导电流。 端块壳体被实现为使得封闭导电装置的端块壳体中的每个电流路径在至少一个点处具有中断。

公开(公告)号：US20100123368A1

公开(公告)日：2010-05-20

申请号：US12618324

申请日：2009-11-13

申请人： Takamichi FUJII ,  Takayuki Naono ,  Takami Arakawa

发明人： Takamichi FUJII ,  Takayuki Naono ,  Takami Arakawa

IPC分类号： C23C14/34 ,  H05H1/24 ,  C23C16/54 ,  B32B9/00 ,  B67D7/02 ,  H01L41/24 ,  H01L41/187 ,  G10K9/122 ,  B41J2/045

CPC分类号： B41J2/155 ,  B41J2/14233 ,  C23C14/0036 ,  C23C14/088 ,  C23C14/3407 ,  C23C14/3471 ,  H01J37/32935 ,  H01J37/3299 ,  H01J37/34 ,  H01J37/3444 ,  H01L41/0477 ,  H01L41/0478 ,  H01L41/0973 ,  H01L41/316 ,  Y10T29/42 ,  Y10T428/31504

摘要： When a film containing constituent elements of a target is formed on a substrate through a vapor deposition process using plasma with placing the substrate and the target to face each other, a potential in a spatial range of at least 10 mm extending laterally from the outer circumference of the substrate is controlled to be equal to a potential on the substrate, and/or the substrate is surrounded with a wall surface having a potential controlled to be equal to the potential on the substrate.

摘要翻译： 当通过使用等离子体的等离子体通过使基板和目标物彼此面对而在基板上形成含有靶的构成元素的膜时，从外周侧横向延伸的至少10mm的空间范围的电位 被控制为等于衬底上的电位，并且/或者衬底被具有被控制为等于衬底上的电位的电位的壁表面包围。

公开(公告)号：US20090321249A1

公开(公告)日：2009-12-31

申请号：US12554670

申请日：2009-09-04

申请人： Roman Chistyakov ,  Bassam Hanna Abraham

发明人： Roman Chistyakov ,  Bassam Hanna Abraham

IPC分类号： C23C14/35 ,  C23C14/06

CPC分类号： C23C14/354 ,  C23C14/3414 ,  C23C14/3485 ,  C23C14/352 ,  H01J37/3408 ,  H01J37/3423 ,  H01J37/3444 ,  H01J37/3467 ,  H01J37/347

摘要： A sputtering apparatus includes a chamber for containing a feed gas. An anode is positioned inside the chamber. A cathode assembly comprising target material is positioned adjacent to an anode inside the chamber. A magnet is positioned adjacent to cathode assembly. A platen that supports a substrate is positioned adjacent to the cathode assembly. An output of the power supply is electrically connected to the cathode assembly. The power supply generates a plurality of voltage pulse trains comprising at least a first and a second voltage pulse train. The first voltage pulse train generates a first discharge from the feed gas that causes sputtering of a first layer of target material having properties that are determined by at least one of a peak amplitude, a rise time, and a duration of pulses in the first voltage pulse train. The second voltage pulse train generates a second discharge from the feed gas that causes sputtering of a second layer of target material having properties that are determined by at least one of a peak amplitude, a rise time, and a duration of pulses in the second voltage pulse train.

摘要翻译： 溅射装置包括用于容纳进料气体的室。 阳极位于室内。 包括目标材料的阴极组件邻近室内的阳极定位。 磁体定位成与阴极组件相邻。 支撑基板的压板位于与阴极组件相邻的位置。 电源的输出电连接到阴极组件。 电源产生包括至少第一和第二电压脉冲串的多个电压脉冲串。 第一电压脉冲串从进料气体产生第一次放电，该第一次放电导致第一层靶材料的溅射，该第一层靶材料的性质由峰值振幅，上升时间和第一电压中的脉冲持续时间 脉冲列车 第二电压脉冲串从进料气体产生第二次放电，其引起第二层靶材料的溅射，该第二层靶材料的性质由峰值振幅，上升时间和第二电压中的脉冲持续时间中的至少一个确定 脉冲列车

公开(公告)号：US07531070B2

公开(公告)日：2009-05-12

申请号：US10800935

申请日：2004-03-15

申请人： Noboru Kuriyama ,  Kazuhiko Imagawa

发明人： Noboru Kuriyama ,  Kazuhiko Imagawa

IPC分类号： C23C14/34

CPC分类号： H01J37/3444 ,  H02M3/1582 ,  H02M3/33576

摘要： A sputtering power-supply unit comprises a voltage generation section which generates a sputtering voltage between a negative electrode output terminal and a positive electrode output terminal, and a circuit section which reduces fluctuation in a sputtering current even if an arc discharge occurs between the negative electrode output terminal and the positive electrode output terminal. Thus, fluctuation in the sputtering current can be reduced even if the arc discharge occurs between the negative electrode output terminal and the positive electrode output terminal.

摘要翻译： 溅射电源单元包括在负极输出端子和正极输出端子之间产生溅射电压的电压产生部分，以及即使在负极电极之间发生电弧放电也可以减小溅射电流的波动的电路部分 输出端子和正极输出端子。 因此，即使在负极输出端子和正极输出端子之间发生电弧放电，也可以降低溅射电流的波动。

公开(公告)号：US07517437B2

公开(公告)日：2009-04-14

申请号：US11392026

申请日：2006-03-29

申请人： Bassam Shamoun

发明人： Bassam Shamoun

IPC分类号： C23C14/54

CPC分类号： C23C14/345 ,  H01J37/34 ,  H01J37/3444

摘要： A method and apparatus for sputter depositing a film on a substrate is disclosed. By providing a superimposed RF bias over a DC bias, plasma ionization is increased. In order to increase the resistive load across the substrate, an impedance circuit is provided between the substrate and the susceptor. The impedance circuit allows an insulating substrate to effectively function as an anode and connect to ground.

摘要翻译： 公开了一种在衬底上溅射沉积膜的方法和装置。 通过在DC偏置上提供叠加的RF偏压，等离子体电离增加。 为了增加跨衬底的电阻性负载，在衬底和基座之间提供阻抗电路。 阻抗电路允许绝缘基板有效地用作阳极并连接到地。

公开(公告)号：US20090078566A1

公开(公告)日：2009-03-26

申请号：US11917491

申请日：2006-06-01

申请人： Akihiko Ikeda ,  Daigorou Ookubo ,  Tetsuya Kawakami ,  Takashi Nakamura ,  Masamitsu Sasahara ,  Daisuke Nagahama ,  Tomomi Fukaya

发明人： Akihiko Ikeda ,  Daigorou Ookubo ,  Tetsuya Kawakami ,  Takashi Nakamura ,  Masamitsu Sasahara ,  Daisuke Nagahama ,  Tomomi Fukaya

IPC分类号： C23C14/34 ,  C23C14/38 ,  C01B33/02 ,  C01B31/36 ,  C01B31/00

CPC分类号： C23C16/515 ,  C23C16/24 ,  C23C16/26 ,  C23C16/325 ,  C23C16/4401 ,  C23C16/45508 ,  C23C16/45578 ,  C23C16/4586 ,  C23C16/503 ,  G03G5/08214 ,  G03G5/08221 ,  G03G5/08285 ,  H01J37/32009 ,  H01J37/34 ,  H01J37/3414 ,  H01J37/3426 ,  H01J37/3435 ,  H01J37/3444

摘要： The present invention relates to a method of forming a deposited film including a first step for setting a deposited film forming target (10) into a reaction chamber (4), a second step for filling the reaction chamber (10) with a reaction gas and a third step for applying pulse DC voltage between a first conductor (3) and a second conductor (40) spaced from each other in the reaction chamber (10). The present invention further relates to a deposited film forming device for performing the above method. Preferably, in the third step, potential difference between the first conductor (3) and the second conductor (40) is set to not less than 50V and not more than 3000V, and pulse frequency of the pulse DC voltage applied to the first and second conductors (3, 40) is set to not more than 300kHz. Duty ratio of the pulse DC voltage is set to not less than 20% and not more than 90%.

摘要翻译： 本发明涉及形成沉积膜的方法，该沉积膜包括用于将沉积的膜形成靶（10）设置到反应室（4）中的第一步骤，用反应气体填充反应室（10）的第二步骤，以及 在反应室（10）中在第一导体（3）和彼此间隔开的第二导体（40）之间施加脉冲直流电压的第三步骤。 本发明还涉及一种用于执行上述方法的沉积膜形成装置。 优选地，在第三步骤中，将第一导体（3）和第二导体（40）之间的电位差设定为不小于50V且不大于3000V，并且将脉冲直流电压的脉冲频率施加到第一和第二导体 导体（3，40）设置为不超过300kHz。 脉冲直流电压的占空比设定为20％以上且90％以下。