摘要:
A danger detector configured as a point detector includes an alarm housing with an alarm cover, a non-contact heat radiation sensor that is sensitive to heat radiation in the infrared range, and a treatment unit configured to determine and emit a temperature value derived from the detected heat radiation for the ambient temperature in the surroundings of the danger detector and/or an alarm, in the event that the currently determined temperature value exceeds a predetermined temperature comparison value. The heat radiation sensor is arranged in the alarm housing and is configured to optically detect the ambient temperature on the inner side of the alarm cover. The heat radiation sensor may be a thermopile designed as an SMD component.
摘要:
In one embodiment, A MEMS sensor assembly includes a substrate, a first sensor supported by the substrate and including a first absorber spaced apart from the substrate, and a second sensor supported by the substrate and including (i) a second absorber spaced apart from the substrate, and (ii) at least one thermal shorting portion integrally formed with the second absorber and extending downwardly from the second absorber to the substrate thereby thermally shorting the second absorber to the substrate.
摘要:
A terahertz imager includes an array of pixel circuits. Each pixel circuit has an antenna and a detector. The detector is coupled to differential output terminals of the antenna. A frequency oscillator is configured to generate a frequency signal on an output line. The output line is coupled to an input terminal of the antenna of at least one of the pixel circuits.
摘要:
In one embodiment, an infrared (IR) sensor module includes an IR sensor assembly, including a substrate, a microbolometer array disposed on an upper surface of the substrate; and a cap disposed on the upper surface of the substrate and hermetically enclosing the microbolometer array. A base is disposed below the substrate, and a heat spreader having a generally planar portion is interposed between a lower surface of the substrate and an upper surface of the base. In some embodiments, the heat spreader can include a material having an anisotropic thermal conductivity, e.g., graphite.
摘要:
An imaging device according to an embodiment includes: a semiconductor substrate; a reference pixel with a first concave portion disposed in a first portion of a surface of the semiconductor substrate; and one or more infrared detection pixels each configured to detect light with a second concave portion disposed in a second portion of the surface of the semiconductor substrate, the reference pixel being directly connected to the semiconductor substrate at a position where the first concave portion is not present, and including a first thermoelectric conversion unit configured to convert heat to an electric signal, the first thermoelectric conversion unit being disposed in the first concave portion and including a first thermoelectric conversion element, each infrared detection pixel including a second thermoelectric conversion unit being disposed in the second concave portion and including a second thermoelectric conversion element.
摘要:
A terahertz ellipsometer, the basic preferred embodiment being a sequential system having a backward wave oscillator (BWO); a first rotatable polarizer that includes a wire grid (WGP1); a rotating polarizer that includes a wire grid (RWGP); a stage (STG) for supporting a sample (S); a rotating retarder (RRET) comprising first (RP), second (RM1), third (RM2) and fourth (RM3) elements; a second rotatable polarizer that includes a wire grid (WGP2); and a Golay cell detector (DET).
摘要:
An ultraviolet sensor includes a p-type doping substrate, an n-type doping region and an ultraviolet pass filter layer. The n-type doping region is formed on a surface of the p-type doping substrate. The ultraviolet pass filter layer is disposed in correspondence with the n-type doping region. The n-type doping region is located between the ultraviolet pass filter layer and the p-type doping substrate. An ultraviolet sensing apparatus includes an ultraviolet sensor, an auxiliary light sensor and a processing circuit. The ultraviolet sensor generates an ultraviolet sensing result in response to surrounding light. The auxiliary light sensor generates an auxiliary light sensing result in response to the surrounding light. The auxiliary light sensor and the ultraviolet sensor have different detection wave ranges. The processing circuit performs manipulation upon the auxiliary light sensing result according to the ultraviolet sensing result, and accordingly obtains a compensated ultraviolet sensing result.
摘要:
Embodiments of the invention are directed to integrated resonance detectors and arrays of integrated resonance detectors and to methods for making and using the integrated resonance detectors and arrays. Integrated resonance detectors comprise a substrate, a conducting mirror layer, an active layer, and a patterned conducting layer. Electromagnetic radiation is detected by transducing a specific resonance-induced field enhancement in the active layer to a detection current that is proportional to the incident irradiance.
摘要:
The architecture, design and fabrication of array of suspended micro-elements with individual seals are described. Read out integrated circuit is integrated monolithically with the suspended elements for low parasitics and high signal to noise ratio detection of changes of their electrical resistance. Array of individually sealed, suspended micro-elements is combined with signal processing chip that contains nonvolatile memory with sensitivity calibration of all elements and interpolation between non-functional elements. When the micro-elements are infrared light absorbers, image analysis and recognition is embedded in the processing chip to form the infrared imaging solution for infrared cameras.
摘要:
Embodiments of the invention pertain to a method and apparatus for sensing infrared (IR) radiation. In a specific embodiment, a night vision device can be fabricated by depositing a few layers of organic thin films. Embodiments of the subject device can operate at voltages in the range of 10-15 Volts and have lower manufacturing costs compared to conventional night vision devices. Embodiments of the device can incorporate an organic phototransistor in series with an organic light emitting device. In a specific embodiment, all electrodes are transparent to infrared light. An IR sensing layer can be incorporated with an OLED to provide IR-to-visible color up-conversion. Improved dark current characteristics can be achieved by incorporating a poor hole transport layer material as part of the IR sensing layer.