公开(公告)号：US20230407458A1

公开(公告)日：2023-12-21

申请号：US18337764

申请日：2023-06-20

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Yoji TAKIZAWA ,  Masatoshi HIGUCHI

IPC: C23C14/34 ,  C23C14/50 ,  C23C14/54 ,  C23C14/06 ,  C23C14/58 ,  H01J37/34 ,  H01J37/32

CPC classification number: C23C14/34 ,  C23C14/505 ,  C23C14/541 ,  C23C14/0641 ,  C23C14/586 ,  H01J37/3411 ,  H01J37/32724

Abstract: A film formation apparatus includes: a chamber which an interior thereof can be made vacuum; a rotary table provided inside the chamber, holding a workpiece, and circulating and transporting the workpiece in a circular trajectory; a film formation unit including a target formed of film formation material and a plasma generator which turns sputtering gas introduced between the target and the rotary table into plasma, the film formation unit depositing by sputtering film formation material on the workpiece; a film processing unit processing the film deposited by the film formation unit on the workpiece; holding regions each holding the workpiece and provided in a circular film formation region facing the film formation unit and the film processing unit that is a region other than the rotation axis in the rotary table; and a heater provided in the holding regions.

公开(公告)号：US20230366077A1

公开(公告)日：2023-11-16

申请号：US18029054

申请日：2021-09-15

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Shigeki MATSUNAKA ,  Atsushi FUJITA

IPC: C23C14/06 ,  C23C14/34 ,  C23C14/48 ,  H01L21/02 ,  H01J37/34

CPC classification number: C23C14/0617 ,  C23C14/3485 ,  C23C14/48 ,  H01L21/0254 ,  H01L21/02631 ,  H01J37/3467

Abstract: According to an embodiment, a film formation apparatus and a film formation method that can form GaN film with high productivity are provided. The film formation apparatus includes: the chamber which an interior thereof can be made vacuum; the rotary table provided inside the chamber, holding a workpiece, and circulating and transporting the workpiece in a circular trajectory, a GaN film formation processing unit including a target formed of film formation material containing GaN and a plasma generator which turns sputtering gas introduced between the target and the rotary table into plasma, the GaN film formation processing unit depositing by sputtering particles of the film formation material containing GaN on the workpiece circulated and transported by the rotary table; and a nitriding processing unit nitriding particles of the film formation material deposited on the workpiece circulated and transported by the rotary table in the GaN film formation processing unit.

公开(公告)号：US20230077617A1

公开(公告)日：2023-03-16

申请号：US17942520

申请日：2022-09-12

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Masaaki FURUYA ,  Hiroaki KOBAYASHI ,  Hideki MORI

IPC: H01L21/67

Abstract: According to one embodiment, provided is a supply tank a supply device, and a supply system that stabilizes the liquid temperature of a process liquid to be supplied to a substrate processing device. A supply tank that supplies a process liquid to a substrate processing device includes a container that stores the process liquid, a first dividing plate that divides the container into a first region where the process liquid is introduced, and a second region that supplies the process liquid to the substrate processing device, first piping that feeds, to the second region, the process liquid introduced in the first region, and a first heater which is provided on a path through the first piping, and which heats the process liquid.

公开(公告)号：US20220319875A1

公开(公告)日：2022-10-06

申请号：US17656059

申请日：2022-03-23

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Yoko TARUNO

IPC: H01L21/67 ,  B08B3/08 ,  B08B13/00

Abstract: A substrate drying apparatus and a substrate processing apparatus that can reduce the blockade of patterns are provided. The substrate drying apparatus according to one embodiment includes: the drier (substrate drying apparatus) of the present disclosure, includes the heater which heats the substrate, the drying room into which the substrate wherein the liquid film of the processing liquid is formed on the surface to be processed is carried in, the support which receives the substrate carried into the drying room at the standby position distant from the heater, and the driving mechanism which moves the substrate close to the heater and ejects the liquid at which the gas layer is produced between the substrate heated by the heater and the liquid film by centrifugal force due to the rotation of the substrate.

公开(公告)号：US20220310417A1

公开(公告)日：2022-09-29

申请号：US17704135

申请日：2022-03-25

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Minami NAKAMURA ,  Kensuke DEMURA

IPC: H01L21/67 ,  H01L21/687

Abstract: A substrate treatment device includes a placement platform rotating a substrate, a cooling part supplying a cooling gas to a space between the placement platform and the substrate, a liquid supplier supplying a liquid to a surface of the substrate opposite to the placement platform side, a detector that is above the surface of the substrate and detects a freezing start of the liquid, and a controller controlling the substrate rotation, the cooling gas supply, and the liquid supply. The controller controls at least one of the substrate rotation, the cooling gas flow rate, or the liquid supply rate, and causes the liquid on the substrate surface to reach a supercooled state; and when determining based on a signal from the detector that the freezing of the supercooled liquid has started, the controller starts thawing the frozen liquid after a prescribed interval has elapsed from the freezing start of the liquid.

公开(公告)号：US11387082B2

公开(公告)日：2022-07-12

申请号：US16581886

申请日：2019-09-25

Applicant: Shibaura Mechatronics Corporation

Inventor： Hidehito Azumano

IPC: H01J37/32 ,  H01B1/02

Abstract: According to one embodiment, a plasma processing apparatus includes a chamber being possible to maintain an atmosphere more depressurized than atmospheric pressure, a plasma generator generating a plasma inside the chamber, a gas supplier supplying a gas into the chamber, a placement part positioned below a plasma generation region and placing a processed product thereon, a depressurization part depressurizing the chamber, and a power supply electrically connected to an electrode provided on the placement part via a bus bar. The bus bar is formed of an alloy of copper and gold. Gold is more included than copper on a surface side of the bus bar. The bus bar includes a first layer formed of copper and a second layer covering the first layer and formed of an alloy of copper and gold. Gold is more included than copper on a surface side of the second layer.

公开(公告)号：US20220084871A1

公开(公告)日：2022-03-17

申请号：US17474403

申请日：2021-09-14

Applicant: Shibaura Mechatronics Corporation

Inventor： Shohei TANABE ,  Koji YOSHIMURA ,  Ryo MATSUHASHI

IPC: H01L21/687 ,  H01J37/32 ,  H01J37/34 ,  H01L21/02

Abstract: A film deposition apparatus reduces hillock formation while yielding uniform film thickness distribution. A film deposition apparatus of a present embodiment includes: a chamber; a rotary table that circulates and carries a workpiece W along a circumferential transfer path L; multiple targets that contain a film deposition material, and that are provided in positions at different radial distances from a center of rotation of the rotary table; a shield member that forms a film deposition chamber surrounding a region where the film deposition material scatters, and that has an opening on the side facing the circulated and carried workpiece; and a plasma generator that includes a sputter gas introduction unit for introducing a sputter gas into the film deposition chamber, and a power supply unit for applying power to the target, and that generates plasma in the sputter gas G1 in the film deposition chamber.

公开(公告)号：US20220080468A1

公开(公告)日：2022-03-17

申请号：US17469876

申请日：2021-09-09

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Kensuke DEMURA ,  Daisuke MATSUSHIMA ,  Masaya KAMIYA

IPC: B08B3/10 ,  H01L21/687 ,  B08B7/00 ,  B08B3/04 ,  B08B13/00

Abstract: A substrate processing apparatus according to an embodiment of the present disclosure includes a stage having a substantially disc-shaped form and including a hole in a center thereof; a roller that contacts a side surface of the stage and rotates the stage; a first liquid nozzle that supplies a first liquid to a first surface of the substrate; a first driver that moves a position of the first liquid nozzle; a second liquid nozzle that supplies a second liquid from the hole of the stage to a second surface of the substrate; a second driver that moves a position of the second liquid nozzle; a cooling nozzle that supplies a cooling gas from the hole of the stage to the second surface; a third driver that moves a position of the cooling nozzle; and a controller that controls the first driver, the second driver, and the third driver.

公开(公告)号：US20210305171A1

公开(公告)日：2021-09-30

申请号：US17205098

申请日：2021-03-18

Applicant: Shibaura Mechatronics Corporation

Inventor： Hisashi NISHIGAKI ,  Atsushi FUJITA ,  Shohei TANABE ,  Yoshinao KAMO ,  Shigeki MATSUNAKA

IPC: H01L23/552 ,  H01F10/26 ,  H01F10/30 ,  H05K9/00 ,  H01L23/00

Abstract: According to one embodiment, an electromagnetic wave attenuator includes a first structure body. The first structure body includes a first member, a second member, and a third member. The first member includes a first magnetic layer and a first nonmagnetic layer alternately provided in a first direction. The first nonmagnetic layer is conductive. The first direction is a stacking direction. The second member includes a second magnetic layer and a second nonmagnetic layer alternately provided in the first direction. The second nonmagnetic layer is conductive. The third member includes a third nonmagnetic layer. The third nonmagnetic layer is conductive. A direction from the third member toward the first member is along the first direction. A direction from the third member toward the second member is along the first direction. A first magnetic layer thickness is greater than a second magnetic layer thickness.

公开(公告)号：US11127574B2

公开(公告)日：2021-09-21

申请号：US15941853

申请日：2018-03-30

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Yoshio Kawamata ,  Yu Kambe

IPC: H01J37/34 ,  H01J37/32 ,  C23C14/50 ,  C23C14/56

Abstract: A plasma processing apparatus includes a conveyance unit that has a rotator in a vacuum container, and circulating carries a workpiece by the rotator along a circular conveyance path, a cylindrical member extended in a direction toward the conveyance path in the vacuum container, a window member that divides a gas space where a process gas is introduced and an exterior, and an antenna causing the process gas to generate inductive coupling plasma for plasma processing when power is applied. The cylindrical member is provided with an opposing part with the opening and faces the rotator, a dividing wall is provided between the opposing part and the rotator so as not to contact the opposing part and the rotator and not to move relative to the vacuum container, and the dividing wall is provided with an adjustment opening that faces the opening, and adjusts a range of the plasma processing.