Method for fabricating a bipolar transistor of the self-aligned double-polysilicon type with a heterojunction base and corresponding transistor
    141.
    发明申请
    Method for fabricating a bipolar transistor of the self-aligned double-polysilicon type with a heterojunction base and corresponding transistor 有权
    用于制造具有异质结基极和相应晶体管的自对准双多晶硅型双极晶体管的方法

    公开(公告)号:US20010053584A1

    公开(公告)日:2001-12-20

    申请号:US09817898

    申请日:2001-03-26

    CPC classification number: H01L29/66242 H01L29/7378

    Abstract: A self-aligned double-polysilicon type bi-polar transistor with a heterojunction base comprises a semiconducting heterojunction region lying over an active region of a semiconductor substrate and over an isolating region delimiting the active region, and incorporating the intrinsic base region of the transistor. An emitter region situated above the active region and coming into contact with the upper surface of the semiconducting heterojunction region. A polysilicon layer forming the extrinsic base region of the transistor, situated on each side of the emitter region and separated from the semiconducting heterojunction region by a separation layer comprising an electrically conducting connection part situated just outside the emitter region. This connection part ensures an electrical contact between the extrinsic base and the intrinsic base.

    Abstract translation: 具有异质结基底的自对准双多晶硅型双极晶体管包括位于半导体衬底的有源区上方的半导体异质结区域和界定有源区域的隔离区域,以及掺入晶体管的本征基极区域。 位于有源区上方并与半导体异质结区的上表面接触的发射极区。 形成晶体管的非本征基极区域的多晶硅层,位于发射极区域的每一侧,并且通过分离层与半导体异质结区域分离,所述分离层包括位于发射极区域正前方的导电连接部分。 该连接部件确保外部基座和内部基座之间的电接触。

    Linear regulator with low overshooting in transient state
    142.
    发明申请
    Linear regulator with low overshooting in transient state 有权
    线性稳压器,在过渡状态下具有低过冲

    公开(公告)号:US20010050546A1

    公开(公告)日:2001-12-13

    申请号:US09827295

    申请日:2001-04-05

    Inventor: Nicolas Marty

    CPC classification number: G05F1/565 G05F1/575

    Abstract: A voltage regulator includes a regulation MOS transistor with low serial resistance having a first terminal connected to a voltage source and a second terminal connected to the output of the voltage regulator and an amplifier having an output driving a gate of the transistor. The gate is driven based upon a difference between a reference voltage and a feedback voltage. The regulator may also include an anti-overshoot switch with a first terminal connected to the gate of the regulation MOS transistor and a second terminal is taken to a potential for turning the regulation MOS transistor off. A switch controller closes the switch when the output voltage of the regulator is higher than a first threshold. The first threshold may be higher than the nominal value of the output voltage.

    Abstract translation: 电压调节器包括具有低串联电阻的调节MOS晶体管,其具有连接到电压源的第一端子和连接到电压调节器的输出端的第二端子和具有驱动晶体管的栅极的输出的放大器。 基于参考电压和反馈电压之间的差异来驱动门。 调节器还可以包括具有连接到调节MOS晶体管的栅极的第一端子的反过冲开关,并且将第二端子置于使调节MOS晶体管截止的电位。 当调节器的输出电压高于第一阈值时,开关控制器关闭开关。 第一阈值可能高于输出电压的标称值。

    Method for the correction of a bit in a string of bits
    143.
    发明申请
    Method for the correction of a bit in a string of bits 有权
    用于校正一串比特中的比特的方法

    公开(公告)号:US20010044922A1

    公开(公告)日:2001-11-22

    申请号:US09737827

    申请日:2000-12-15

    CPC classification number: G06F11/1008 G06F11/1032 G06F2201/81 H03M13/19

    Abstract: A method for the correction of an erroneous bit in a string of bits includes providing, in the string of bits, for a first parity bit computed from the other bits of the string of bits at a point in time when the erroneous bit was valid. The correct value of the erroneous bit is computed by using the other bits of the string of bits comprising the parity bit. The erroneous bit is then replaced by its correct value. The method is applicable to error correction circuits in EEPROM memories.

    Abstract translation: 用于校正一串比特中的错误比特的方法包括:在该比特串中,提供在该错误比特有效的时间点从该比特串的其他比特计算的第一奇偶校验位。 通过使用包括奇偶校验位的位串串的其他位来计算错误位的正确值。 错误的位被其正确的值替换。 该方法适用于EEPROM存储器中的纠错电路。

    Pseudo-random number generator
    144.
    发明申请
    Pseudo-random number generator 审中-公开
    伪随机数发生器

    公开(公告)号:US20010023423A1

    公开(公告)日:2001-09-20

    申请号:US09805265

    申请日:2001-03-13

    Inventor: Fabrice Marinet

    CPC classification number: H03K3/84

    Abstract: A pseudo-random number generator includes a first generator for producing a sawtooth waveform signal having a first frequency, and a second generator for producing a pulse signal having a second frequency. A sampling circuit samples the sawtooth waveform signal and the pulse signal for generating a sample signal of the sawtooth waveform signal at the second frequency. A coding circuit codes the amplitude of the sample signal to supply binary values. The pseudo-random number generator has applications in integrated circuits which are used in contact type or contactless IC cards.

    Abstract translation: 伪随机数发生器包括用于产生具有第一频率的锯齿波形信号的第一发生器和用于产生具有第二频率的脉冲信号的第二发生器。 采样电路对锯齿波形信号和脉冲信号进行采样,以产生第二频率的锯齿波形信号的采样信号。 编码电路对采样信号的幅度进行编码以提供二进制值。 伪随机数发生器在用于接触型或非接触式IC卡的集成电路中具有应用。

    Read-ahead electrically erasable and programmable serial memory
    145.
    发明申请
    Read-ahead electrically erasable and programmable serial memory 有权
    预读电可擦除和可编程的串行存储器

    公开(公告)号:US20010021117A1

    公开(公告)日:2001-09-13

    申请号:US09795657

    申请日:2001-02-28

    Abstract: A serial input/output memory is able to read data in the memory upon reception of a partial read address in which there are N least significant bits lacking to form a complete address. The read-ahead step includes: simultaneously reading the P first bits of M words of the memory having the same partial address; when the received address is complete, selecting the P first bits of the word designated by the complete address and delivering these bits at the serial output of the memory; reading P following bits of the word designated by the complete address during the delivery of P previous bits and delivering these bits at the serial output of the memory when the P previous bits are delivered.

    Abstract translation: 串行输入/输出存储器能够在接收到缺少形成完整地址的N个最低有效位的部分读取地址时读取存储器中的数据。 预读步骤包括:同时读取具有相同部分地址的存储器的M个字的P个第一位; 当接收到的地址完成时,选择由完整地址指定的字的P个第一位,并将这些位传送到存储器的串行输出; 在传送P个以前的位期间读取由完整地址指定的字的P后续位,并且当P个先前的位被递送时,将这些位递送到存储器的串行输出。

    Device for the detection of a high voltage
    146.
    发明申请
    Device for the detection of a high voltage 有权
    用于检测高电压的装置

    公开(公告)号:US20010015661A1

    公开(公告)日:2001-08-23

    申请号:US09727299

    申请日:2000-11-30

    Inventor: Richard Fournel

    CPC classification number: G05F3/247 G01R19/16519 G11C5/147

    Abstract: A device for detecting the application of a high voltage signal to an internal node of an integrated circuit includes a high-voltage divider circuit and a threshold detection circuit. The threshold detection circuit receives a signal given by the output of the divider circuit, and provides a threshold crossing detection signal at an output thereof based upon the signal crossing a threshold. The detection circuit is connected between the logic supply voltage and ground, and further includes a negative feedback loop. The negative feedback loop is connected to the output of the divider circuit to limit the voltage build-up of the high voltage signal at the output thereof after the crossing of the detection threshold by the signal.

    Abstract translation: 用于检测向集成电路的内部节点施加高电压信号的装置包括高压分压器电路和阈值检测电路。 阈值检测电路接收由分频电路的输出给出的信号,并且基于信号穿过阈值在其输出端提供阈值交叉检测信号。 检测电路连接在逻辑电源电压和地之间,并且还包括负反馈回路。 负反馈回路连接到除法器电路的输出端,以在检测阈值与信号交叉之后限制其输出处的高电压信号的电压积分。

    Electronic security component
    147.
    发明申请
    Electronic security component 有权
    电子安全部件

    公开(公告)号:US20010003540A1

    公开(公告)日:2001-06-14

    申请号:US09727300

    申请日:2000-11-30

    CPC classification number: H04L9/0891 H04L9/0631 H04L2209/04

    Abstract: In an electronic component including a two-way bus through which data elements travel between peripherals and a central processing unit at the rate of a clock signal, the central processing unit and at least one of the peripherals each includes a data encryption/decryption cell. Each data encryption/decryption cell uses the same secret key. The secret key is produced locally at each clock cycle in each cell from a random signal synchronous with the clock signal, and is applied to each of the cells by a one-way transmission line.

    Abstract translation: 在包括双向总线的电子部件中,数据元件通过该双向总线以时钟信号的速率在外围设备和中央处理单元之间行进,中央处理单元和至少一个外围设备都包括数据加密/解密单元。 每个数据加密/解密单元使用相同的秘密密钥。 秘密密钥是从与时钟信号同步的随机信号在每个小区中的每个时钟周期本地产生的,并且通过单向传输线应用于每个小区。

    Variable Gain Amplifier in a Receiving Chain
    148.
    发明申请

    公开(公告)号:US20190372539A1

    公开(公告)日:2019-12-05

    申请号:US16428413

    申请日:2019-05-31

    Inventor: Renald Boulestin

    Abstract: A variable gain amplifier includes a pair of amplification and recentering branches. Each branch includes: a resistive element of variable resistance configured to be driven by a variable gain controller; a digitally-driven variable current source configured to be driven by a compensation current driver unit; a first transistor comprising a gate terminal coupled to an input terminal of the variable gain amplifier, and a source terminal coupled to a first terminal of the resistive element; and a second transistor comprising a gate terminal coupled to a drain terminal of the first transistor, and a source terminal coupled to an output terminal of the variable gain amplifier.

Patent Agency Ranking