公开(公告)号：US08415091B2

公开(公告)日：2013-04-09

申请号：US13079942

申请日：2011-04-05

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F7/26

CPC classification number: G03F7/2041 ,  G03F7/004 ,  G03F7/0045 ,  G03F7/0392

Abstract: A photoresist material having a polymer that turns soluble to a base solution in response to reaction with acid. The material includes a photo-acid generator (PAG) that decomposes to form acid in response to radiation energy and a quencher capable of neutralizing acid and having a reduced mobility. The photoresist material can thereby prevent water mark defects from immersion lithography.

Abstract translation: 一种光致抗蚀剂材料，其具有响应于与酸的反应而使其溶解于碱溶液的聚合物。 该材料包括响应于辐射能分解形成酸的光酸产生剂（PAG）和能够中和酸并具有降低迁移率的猝灭剂。 因此，光致抗蚀剂材料可以防止浸没式光刻中的水痕缺陷。

公开(公告)号：US20120264057A1

公开(公告)日：2012-10-18

申请号：US13534961

申请日：2012-06-27

Applicant: Chien-Wei Wang ,  Ching-Yu Chang ,  Tsai-Sheng Gau ,  Burn Jen Lin

Inventor： Chien-Wei Wang ,  Ching-Yu Chang ,  Tsai-Sheng Gau ,  Burn Jen Lin

IPC: G03F7/004 ,  G03F7/20 ,  G03F7/027

CPC classification number: G03F7/0045 ,  Y10S430/106 ,  Y10S430/114 ,  Y10S430/12 ,  Y10S430/128

Abstract: A resist material and methods using the resist material are disclosed herein. An exemplary method includes forming a resist layer over a substrate, wherein the resist layer includes a polymer, a photoacid generator, an electron acceptor, and a photodegradable base; performing an exposure process that exposes portions of the resist layer with radiation, wherein the photodegradable base is depleted in the exposed portions of the resist layer during the exposure process; and performing an developing process on the resist layer.

Abstract translation: 本文公开了抗蚀剂材料和使用抗蚀剂材料的方法。 一种示例性方法包括在衬底上形成抗蚀剂层，其中抗蚀剂层包括聚合物，光致酸产生剂，电子受体和可光降解的碱; 执行曝光处理，其用辐射曝光抗蚀剂层的一部分，其中光可降解碱在曝光过程中耗尽抗蚀剂层的曝光部分; 并对抗蚀剂层进行显影处理。

公开(公告)号：US08253922B2

公开(公告)日：2012-08-28

申请号：US11671046

申请日：2007-02-05

Applicant: Bum-Jeng Lin ,  Ching-Yu Chang

Inventor： Bum-Jeng Lin ,  Ching-Yu Chang

IPC: G03B27/52

CPC classification number: G03F7/70866 ,  G03F7/70341

Abstract: Immersion lithography system and method using a sealed wafer bottom are described. One embodiment is an immersion lithography apparatus comprising a lens assembly comprising an imaging lens and a wafer stage for retaining a wafer beneath the lens assembly, the wafer stage comprising a seal ring disposed on a seal ring frame along a top edge of the wafer retained on the wafer stage, the seal ring for sealing a gap between an edge of the wafer and the wafer stage. The embodiment further includes a fluid tank for retaining immersion fluid, the fluid tank situated with respect to the wafer stage for enabling full immersion of the wafer retained on the wafer stage in the immersion fluid and a cover disposed over at least a portion of the fluid tank for providing a temperature-controlled, fluid-rich environment within the fluid tank.

Abstract translation: 描述了浸没光刻系统和使用密封晶片底部的方法。 一个实施例是一种浸没光刻设备，其包括透镜组件，该透镜组件包括成像透镜和用于将晶片保持在透镜组件下方的晶片台，晶片台包括沿着晶片的顶部边缘设置在密封环框架上的密封环， 晶片台，用于密封晶片边缘与晶片台之间的间隙的密封环。 该实施例还包括用于保持浸没流体的流体箱，相对于晶片台定位的流体箱，用于使保留在晶片台上的晶片完全浸没在浸没流体中，并且覆盖设置在流体的至少一部分上 罐，用于在流体箱内提供温度控制，流体丰富的环境。

公开(公告)号：US08222149B2

公开(公告)日：2012-07-17

申请号：US12564200

申请日：2009-09-22

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: H01L21/311

CPC classification number: H01L21/31133 ,  H01L21/26513 ,  H01L21/31111 ,  Y10S438/948 ,  Y10S438/949

Abstract: The present disclosure provides a method for making a semiconductor device. The method includes forming a sacrificial layer on a substrate; forming a patterned resist layer on the sacrificial layer; performing an ion implantation to the substrate; applying a first wet etch solution to remove the patterned photoresist layer; and applying a second wet etch solution to remove the sacrificial layer.

Abstract translation: 本公开提供了制造半导体器件的方法。 该方法包括在衬底上形成牺牲层; 在所述牺牲层上形成图案化的抗蚀剂层; 对衬底进行离子注入; 施加第一湿蚀刻溶液以除去图案化的光致抗蚀剂层; 以及施加第二湿蚀刻溶液以去除所述牺牲层。

公开(公告)号：US08208116B2

公开(公告)日：2012-06-26

申请号：US11670860

申请日：2007-02-02

Applicant: Burn Jeng Lin ,  Ching-Yu Chang

Inventor： Burn Jeng Lin ,  Ching-Yu Chang

IPC: G03B27/52

CPC classification number: G03B27/52 ,  G03F7/70341

Abstract: Immersion lithography system and method using a sealed wafer bottom are described. One embodiment is an immersion lithography apparatus including a lens assembly comprising an imaging lens and a wafer stage for retaining a wafer beneath the lens assembly and comprising a seal ring for sealing a gap between a bottom edge of a wafer retained on the wafer stage and the wafer stage. The apparatus further includes a fluid tank for retaining immersion fluid, the fluid tank situated with respect to the wafer stage for enabling full immersion of the wafer retained on the wafer stage in the immersion fluid; a cover disposed over at least a portion of the fluid tank for providing a temperature-controlled, fluid-rich environment within the fluid tank; and at least one directional flow control fluid inlet surrounding the imaging lens for directing immersion fluid toward an edge of the wafer retained on the wafer stage closest to the imaging lens.

Abstract translation: 描述了浸没光刻系统和使用密封晶片底部的方法。 一个实施例是一种浸没光刻设备，其包括透镜组件，该透镜组件包括成像透镜和用于将晶片保持在透镜组件下方的晶片台，并且包括密封环，用于密封保留在晶片台上的晶片的底部边缘与 晶圆台。 该装置还包括用于保持浸没流体的流体箱，相对于晶片台定位的流体箱，用于使保留在晶片台上的晶片能够完全浸入浸没流体中; 设置在所述流体箱的至少一部分上的盖，用于在所述流体箱内提供温度控制的，富含流体的环境; 以及围绕成像透镜的至少一个方向流量控制流体入口，用于将浸没流体引向保持在最靠近成像透镜的晶片台上的晶片的边缘。

公开(公告)号：US08202680B2

公开(公告)日：2012-06-19

申请号：US13177741

申请日：2011-07-07

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F7/00 ,  G03F7/004 ,  G03F7/11

CPC classification number: G02B1/111 ,  G03F7/091 ,  G03F7/11 ,  G03F7/2041 ,  Y10S430/111

Abstract: Various lithography methods are disclosed herein. In an example, a method includes forming a resist layer over a substrate; forming a coating material layer that includes one of an acid and a chelate compound over the resist layer; and exposing the resist layer and the coating material layer to radiation, wherein during the exposing, the one of the acid and the chelate compound in the coating material layer substantially neutralizes any quencher that diffuses into the coating material layer from the resist layer.

Abstract translation: 本文公开了各种光刻方法。 在一个实例中，一种方法包括在衬底上形成抗蚀剂层; 在抗蚀剂层上形成包含酸和螯合物中的一种的涂料层; 以及将抗蚀剂层和涂层材料层暴露于辐射，其中在曝光期间，涂层材料层中的酸和螯合物之一基本上中和从抗蚀剂层扩散到涂层材料层中的任何猝灭剂。

公开(公告)号：US08178287B2

公开(公告)日：2012-05-15

申请号：US11677089

申请日：2007-02-21

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F7/26 ,  H01L21/027

CPC classification number: G03F7/11 ,  G03F7/0047 ,  G03F7/0757 ,  G03F7/091 ,  G03F7/094

Abstract: A resist material utilized in photolithography patterning includes a first material, and a second material dispersed in the first material. The second material is capable of diffusing to a top surface of the resist material, and has an etch rate different from that of the first material.

Abstract translation: 在光刻图案中使用的抗蚀剂材料包括第一材料和分散在第一材料中的第二材料。 第二材料能够扩散到抗蚀剂材料的顶表面，并且具有与第一材料不同的蚀刻速率。

公开(公告)号：US20120108040A1

公开(公告)日：2012-05-03

申请号：US12916704

申请日：2010-11-01

Applicant: Ching-Yu Chang ,  Kuei-Liang Lu ,  Ming-Feng Shieh

Inventor： Ching-Yu Chang ,  Kuei-Liang Lu ,  Ming-Feng Shieh

IPC: H01L21/20 ,  B05C15/00 ,  B05B1/00 ,  B05C5/00

CPC classification number: G03F7/167 ,  B05D1/60

Abstract: A vaporizing spray deposition device for forming a thin film includes a processing chamber, a fluid line, and a spray head coupled to the fluid line proximate the processing chamber. The fluid line is configured to transfer a polymer fluid and solvent mixture to the spray head. The spray head is configured to receive the polymer fluid and solvent mixture and to atomize the polymer fluid and solvent mixture to emit it in a substantially vaporized form to be deposited on a surface and thereby forming a thin film of the polymer on the surface after evaporation of the solvent. In an embodiment, the vaporizing spray deposition device may include a heating device to perform a hard bake process on the polymer. In an embodiment, the vaporizing spray deposition device may be configured to provide a post deposition solvent spray trim process to the thin film polymer.

Abstract translation: 用于形成薄膜的蒸发喷雾沉积装置包括处理室，流体管线和连接到靠近处理室的流体管线的喷射头。 流体管线被配置为将聚合物流体和溶剂混合物转移到喷雾头。 喷头被配置为接收聚合物流体和溶剂混合物并且雾化聚合物流体和溶剂混合物以将其以基本蒸发的形式发射以沉积在表面上，从而在蒸发后在表面上形成聚合物的薄膜 的溶剂。 在一个实施方案中，蒸发喷雾沉积装置可以包括对聚合物进行硬烘烤过程的加热装置。 在一个实施例中，蒸发喷雾沉积装置可以被配置为向薄膜聚合物提供后沉积溶剂喷涂装置工艺。

公开(公告)号：US08158335B2

公开(公告)日：2012-04-17

申请号：US12210737

申请日：2008-09-15

Applicant: Hsiao-Wei Yeh ,  Ching-Yu Chang ,  Jian-Hong Chen ,  Chih-An Lin

Inventor： Hsiao-Wei Yeh ,  Ching-Yu Chang ,  Jian-Hong Chen ,  Chih-An Lin

IPC: G03F7/26

CPC classification number: H01L21/0273 ,  G03F7/0035 ,  G03F7/405 ,  H01L21/3086

Abstract: The present invention includes a lithography method comprising forming a first patterned insist layer including at least one opening therein over a substrate. A water-soluble polymer layer is formed over the first patterned resist layer and the substrate, whereby a reaction occurs at the interface of the first patterned resist layer and the water-soluble polymer layer. The non-reacted water-soluble polymer layer is removed. Thereafter, a second patterned resist layer is formed over the substrate, wherein at least one portion of the second patterned resist layer is disposed within the at least one opening of the first patterned resist layer or abuts at least one portion of the first patterned resist layer. The substrate is thereafter etched using the first and second patterned resist layers as a mask.

Abstract translation: 本发明包括光刻方法，包括在衬底上形成包括至少一个开口的第一图案化坚固层。 在第一图案化抗蚀剂层和基底上形成水溶性聚合物层，由此在第一图案化抗蚀剂层和水溶性聚合物层的界面处发生反应。 去除未反应的水溶性聚合物层。 此后，在衬底上形成第二图案化抗蚀剂层，其中第二图案化抗蚀剂层的至少一部分设置在第一图案化抗蚀剂层的至少一个开口内，或者邻接第一图案化抗蚀剂层的至少一部分 。 然后使用第一和第二图案化抗蚀剂层作为掩模蚀刻衬底。

公开(公告)号：US07993808B2

公开(公告)日：2011-08-09

申请号：US11324588

申请日：2006-01-03

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F7/00 ,  G03F7/004

CPC classification number: G02B1/111 ,  G03F7/091 ,  G03F7/11 ,  G03F7/2041 ,  Y10S430/111

Abstract: A coating material disposed overlying a photo sensitive layer during an immersion lithography process includes a polymer that is substantially insoluble to an immersion fluid and an acid capable of neutralizing a base quencher from the photo sensitive layer.

Abstract translation: 在浸渍光刻工艺期间设置在光敏层上的涂层材料包括基本上不溶于浸没流体的聚合物和能够从光敏层中和碱猝灭剂的酸。