公开(公告)号：US07250503B2

公开(公告)日：2007-07-31

申请号：US10631558

申请日：2003-07-31

Applicant: Girish Sahni ,  Rajesh Kumar ,  Chaiti Roy ,  Kammara Rajagopal ,  Deepak Nihalani ,  Vasudha Sundaram ,  Mahavir Yadav

Inventor： Girish Sahni ,  Rajesh Kumar ,  Chaiti Roy ,  Kammara Rajagopal ,  Deepak Nihalani ,  Vasudha Sundaram ,  Mahavir Yadav

IPC: C07H21/04 ,  C12N9/48 ,  C12P21/00 ,  C12P21/06

CPC classification number: C07K14/78 ,  A61K38/00 ,  C07K14/3153 ,  C07K19/00 ,  C07K2319/70

Abstract: The present invention provides polynucleotides encoding clot-specific streptokinase proteins possessing altered plasminogen characteristics, including enhanced fibrin selectivity. The kinetics of plasminogen activation by these proteins are distinct from those of natural streptokinase, in that there is a temporary delay or lag in the initial rate of catalytic conversion of plasminogen to plasmin. Also disclosed are processes for preparing the proteins.

Abstract translation: 本发明提供编码具有改变的纤溶酶原特征的凝块特异性链激酶蛋白质的多核苷酸，包括增强的纤维蛋白选择性。 这些蛋白质的纤溶酶原激活的动力学与天然链激酶的动力学不同，因为纤溶酶原对纤溶酶的催化转化的初始速率暂时延迟或滞后。 还公开了制备蛋白质的方法。

公开(公告)号：US20070151391A1

公开(公告)日：2007-07-05

申请号：US11553303

申请日：2006-10-26

Applicant: David Q. Larkin ,  Stephen J. Blumenkranz ,  Rajesh Kumar

Inventor： David Q. Larkin ,  Stephen J. Blumenkranz ,  Rajesh Kumar

IPC: B25J17/02

CPC classification number: A61B34/30 ,  A61B34/37 ,  A61B34/70 ,  A61B34/71 ,  A61B34/76 ,  A61B2034/2061 ,  A61B2034/305 ,  A61B2090/065 ,  Y10T74/20335

Abstract: A modular force sensor apparatus, method, and system are provided to improve force and torque sensing and feedback to the surgeon performing a telerobotic surgery. In one embodiment, a modular force sensor includes a tube portion including a plurality of strain gauges, a proximal tube portion for operably coupling to a shaft of a surgical instrument that may be operably coupled to a manipulator arm of a robotic surgical system, and a distal tube portion for proximally coupling to a wrist joint coupled to an end portion.

Abstract translation: 提供了一种模块式力传感器装置，方法和系统，以改善对外科医生执行远程外科手术的力和转矩检测和反馈。 在一个实施例中，模块化力传感器包括包括多个应变计的管部分，用于可操作地联接到外科器械的轴的近侧管部分，其可操作地联接到机器人手术系统的操纵臂，以及 用于向近侧联接到联接到端部的腕关节的远端管部分。

公开(公告)号：US07164154B2

公开(公告)日：2007-01-16

申请号：US10995566

申请日：2004-11-24

Applicant: Rajesh Kumar ,  Yuichi Takeuchi ,  Mitsuhiro Kataoka ,  Suhail Rashid Jeremy ,  Andrei Mihaila ,  Florin Udrea

Inventor： Rajesh Kumar ,  Yuichi Takeuchi ,  Mitsuhiro Kataoka ,  Suhail Rashid Jeremy ,  Andrei Mihaila ,  Florin Udrea

IPC: H01L29/15

CPC classification number: H01L29/8083 ,  H01L29/1608

Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate including first and second gate layers, a channel layer, a source layer, and a trench; a gate wiring having a first portion and a plurality of second portions; and a source wiring having a third portion and a plurality of fourth portions. The trench extends in a predetermined extending direction. The first portion connects to the first gate layer in the trench, and extends to the extending direction. The second portions protrude perpendicularly to be a comb shape. The third portion extends to the extending direction. The fourth portions protrude perpendicularly to be a comb shape, and electrically connect to the source layer. Each of the second portions connects to the second gate layer through a contact hole.

Abstract translation: 碳化硅半导体器件包括：包括第一和第二栅极层，沟道层，源极层和沟槽的半导体衬底; 栅极布线，具有第一部分和多个第二部分; 以及具有第三部分和多个第四部分的源极布线。 沟槽沿预定的延伸方向延伸。 第一部分连接到沟槽中的第一栅极层，并延伸到延伸方向。 第二部分垂直突出成为梳形。 第三部分延伸到延伸方向。 第四部分垂直突出成梳状，并且电连接到源层。 每个第二部分通过接触孔连接到第二栅极层。

公开(公告)号：US07163817B2

公开(公告)日：2007-01-16

申请号：US09940235

申请日：2001-08-27

Applicant: Girish Sahni ,  Rajesh Kumar ,  Chaiti Roy ,  Kammara Rajagopal ,  Deepak Nihalani ,  Vasudha Sundaram ,  Mahavir Yadav

Inventor： Girish Sahni ,  Rajesh Kumar ,  Chaiti Roy ,  Kammara Rajagopal ,  Deepak Nihalani ,  Vasudha Sundaram ,  Mahavir Yadav

IPC: C12N9/48 ,  C12P21/00 ,  C12P21/06

CPC classification number: C07K14/78 ,  A61K38/00 ,  C07K14/3153 ,  C07K19/00 ,  C07K2319/70

Abstract: The invention disclosed herein provides clot specific streptokinase proteins possessing altered plasminogen characteristics, including enhanced fibrin selectivity. The kinetics of plasminogen activation by these proteins are distinct from those of natural streptokinase, in that there is a temporary delay or lag in the initial rate of catalytic conversion of plasminogen to plasmin. Also disclosed are processes for preparing the proteins.

Abstract translation: 本文公开的本发明提供具有改变的纤溶酶原特征的凝血特异性链激酶蛋白，包括增强的纤维蛋白选择性。 这些蛋白质的纤溶酶原激活的动力学与天然链激酶的动力学不同，因为纤溶酶原对纤溶酶的催化转化的初始速率暂时延迟或滞后。 还公开了制备蛋白质的方法。

公开(公告)号：US20060279267A1

公开(公告)日：2006-12-14

申请号：US11152280

申请日：2005-06-14

Applicant: Edward Burton ,  Peter Hazucha ,  Gerhard Schrom ,  Rajesh Kumar ,  Shekhar Borkar

Inventor： Edward Burton ,  Peter Hazucha ,  Gerhard Schrom ,  Rajesh Kumar ,  Shekhar Borkar

IPC: G05F1/00

CPC classification number: H02M7/003

Abstract: In general, in one aspect, the disclosure describes a semiconductor device that includes a functional circuit and a dc-to-dc power converter. The power converter converts, regulates, and filters a DC input voltage to produce a DC output voltage and provides the DC output voltage to the functional circuit. The dc-to-dc power converter has an operating frequency above 10 MHz.

公开(公告)号：US20050139859A1

公开(公告)日：2005-06-30

申请号：US10984957

申请日：2004-11-10

Applicant: Rajesh Kumar ,  Andrei Mihaila ,  Florin Udrea

Inventor： Rajesh Kumar ,  Andrei Mihaila ,  Florin Udrea

IPC: H01L29/80 ,  H01L21/04 ,  H01L21/337 ,  H01L29/24 ,  H01L29/808 ,  H01L29/06

CPC classification number: H01L29/1608 ,  H01L29/66068 ,  H01L29/8083 ,  Y10S438/931

Abstract: A silicon carbide semiconductor device includes a substrate and a junction field effect transistor. The transistor includes: a first semiconductor layer disposed on the substrate; a first gate layer disposed on a surface of the first semiconductor layer; a first channel layer adjacent to the first gate layer on the substrate; a first source layer connecting to the first channel layer electrically; a second gate layer adjacent to the first channel layer to sandwich the first channel layer; a second channel layer adjacent to the second gate layer to sandwich the second gate layer; a third gate layer adjacent to the second channel layer to sandwich the second channel layer; and a second source layer connecting to the second channel layer electrically.

Abstract translation: 碳化硅半导体器件包括衬底和结场效应晶体管。 晶体管包括：设置在基板上的第一半导体层; 设置在所述第一半导体层的表面上的第一栅极层; 与所述基板上的所述第一栅极层相邻的第一沟道层; 电连接到第一沟道层的第一源极层; 与所述第一沟道层相邻以夹住所述第一沟道层的第二栅极层; 与所述第二栅极层相邻以夹住所述第二栅极层的第二沟道层; 与所述第二沟道层相邻以夹住所述第二沟道层的第三栅极层; 以及电连接到第二沟道层的第二源极层。

公开(公告)号：US06855981B2

公开(公告)日：2005-02-15

申请号：US10230152

申请日：2002-08-29

Applicant: Rajesh Kumar ,  Hiroki Nakamura ,  Tsuyoshi Yamamoto ,  Toshiyuki Morishita

Inventor： Rajesh Kumar ,  Hiroki Nakamura ,  Tsuyoshi Yamamoto ,  Toshiyuki Morishita

IPC: H01L21/04 ,  H01L29/24 ,  H01L29/66 ,  H01L29/808 ,  H01L29/861 ,  H01L29/866 ,  H01L29/872 ,  H01L29/76

CPC classification number: H01L29/66992 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/8083 ,  H01L29/861 ,  H01L29/866 ,  H01L29/872

Abstract: A silicon carbide power device includes a junction field effect transistor and a protective diode, which is a Zener or PN junction diode. The PN junction of the protective diode has a breakdown voltage lower than the PN junction of the transistor. Another silicon carbide power device includes a protective diode, which is a Schottky diode. The Schottky diode has a breakdown voltage lower than the PN junction of the transistor by adjusting Schottky barrier height or the depletion layer formed in the semiconductor included in the Schottky diode. Another silicon carbide power device includes three protective diodes, which are Zener diodes. Two of the protective diodes are used to clamp the voltages applied to the gate and the drain of the transistor due to surge energy and used to release the surge energy. The last diode is a thermo-sensitive diode, with which the temperature of the JFET is measured.

Abstract translation: 碳化硅功率器件包括结场效应晶体管和作为齐纳二极管或PN结二极管的保护二极管。 保护二极管的PN结的击穿电压低于晶体管的PN结。 另一种碳化硅功率器件包括一个保护二极管，它是肖特基二极管。 通过调整肖特基势垒高度或肖特基二极管中包含的半导体中形成的耗尽层，肖特基二极管的击穿电压低于晶体管的PN结。 另一种碳化硅功率器件包括三个保护二极管，它们是齐纳二极管。 两个保护二极管用于钳位由于浪涌能量施加到晶体管的栅极和漏极的电压，并用于释放浪涌能量。 最后一个二极管是热敏二极管，测量JFET的温度。

公开(公告)号：US09814392B2

公开(公告)日：2017-11-14

申请号：US13505058

申请日：2010-11-01

Applicant: Marcin A. Balicki ,  Russell H. Taylor ,  Gregory D. Hager ,  Peter L. Gehlbach ,  James T. Handa ,  Rajesh Kumar

Inventor： Marcin A. Balicki ,  Russell H. Taylor ,  Gregory D. Hager ,  Peter L. Gehlbach ,  James T. Handa ,  Rajesh Kumar

IPC: A61B5/00 ,  A61B3/10 ,  A61B34/20 ,  A61B3/12 ,  A61B8/08 ,  A61B3/13 ,  A61B90/00 ,  A61B5/06 ,  A61B5/107 ,  G06F17/24 ,  A61F9/007 ,  G02B21/00

CPC classification number: A61B5/0066 ,  A61B3/102 ,  A61B3/1225 ,  A61B3/13 ,  A61B5/0084 ,  A61B5/061 ,  A61B5/1076 ,  A61B5/743 ,  A61B5/7475 ,  A61B8/5261 ,  A61B90/37 ,  A61B2034/2065 ,  A61B2090/3614 ,  A61B2090/3735 ,  A61B2560/0295 ,  A61F9/007 ,  G02B21/0012 ,  G06F17/241 ,  G06T7/33

Abstract: A visual tracking and annotation system for surgical intervention includes an image acquisition and display system arranged to obtain image streams of a surgical region of interest and of a surgical instrument proximate the surgical region of interest and to display acquired images to a user; a tracking system configured to track the surgical instrument relative to the surgical region of interest; a data storage system in communication with the image acquisition and display system and the tracking system; and a data processing system in communication with the data storage system, the image acquisition and display system and the tracking system. The data processing system is configured to annotate images displayed to the user in response to an input signal from the user.

公开(公告)号：US20160330232A1

公开(公告)日：2016-11-10

申请号：US14706913

申请日：2015-05-07

Applicant: Rajesh Kumar

Inventor： Rajesh Kumar

IPC: H04L29/06

CPC classification number: H04L63/1441 ,  H04L63/08

Abstract: The invention comprises a predictive security system apparatus and method of use thereof for predicting a threat level of illicit activity of an actor, the actor using authorized access to company information in generation of a threat. The predictive security system optionally: collects data; processes the data with a predictive engine to predict a threat; checks predicted threats against policies via a policy engine; determines a threat level using a threat engine; checks the threat level against a threshold or metric; and/or reports the threat leading to one or more actions. Optionally, the predictive security system is adaptive and/or iterative based on new information.

Abstract translation: 本发明包括一种预测性安全系统装置及其使用方法，用于预测演员的非法活动的威胁级别，该演员使用授权访问公司信息来产生威胁。 预测安全系统可选择：收集数据; 用预测引擎处理数据以预测威胁; 通过政策引擎检查对政策的威胁; 使用威胁引擎确定威胁级别; 根据阈值或度量来检查威胁级别; 和/或报告导致一个或多个动作的威胁。 可选地，预测安全系统基于新信息是自适应和/或迭代的。

公开(公告)号：US09085495B2

公开(公告)日：2015-07-21

申请号：US14115375

申请日：2012-05-04

Applicant: Raymond Neff ,  Alexander Gershanovich ,  Donald C. Mente ,  Rajesh Kumar

Inventor： Raymond Neff ,  Alexander Gershanovich ,  Donald C. Mente ,  Rajesh Kumar

IPC: C05C9/00 ,  C05G3/00

CPC classification number: C05G3/0088 ,  C05C9/00 ,  C05G3/0029 ,  C05G3/0035

Abstract: An encapsulated particle including a core particle, a base layer, and an outer layer is provided. The base layer is disposed about the core particle and comprises polycarbodiimide. The outer layer is disposed about the base layer and comprises wax. A method of forming the encapsulated particle including the steps of reacting an isocyanate in the presence of a catalyst to form the polycarbodiimide, encapsulating the core particle with the polycarbodiimide to form the base layer, and encapsulating the base layer with the wax to form the outer layer is also provided.

Abstract translation: 提供包含核心颗粒，基底层和外层的包封颗粒。 基层围绕核心颗粒设置并包括聚碳化二亚胺。 外层围绕基层设置​​并包括蜡。 一种形成包封颗粒的方法，包括以下步骤：在催化剂存在下使异氰酸酯反应形成聚碳二亚胺，将核心颗粒与聚碳化二亚胺包封以形成基层，并用蜡封装基层以形成外层 还提供了层。