公开(公告)号：US10672915B2

公开(公告)日：2020-06-02

申请号：US15207923

申请日：2016-07-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Masayuki Sakakura ,  Yoshiaki Oikawa ,  Kenichi Okazaki ,  Hotaka Maruyama

IPC: H01L27/32 ,  H01L29/786 ,  H01L27/12 ,  H01L51/52 ,  H01L29/24

Abstract: An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.

公开(公告)号：US10529556B2

公开(公告)日：2020-01-07

申请号：US15636744

申请日：2017-06-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Makoto Furuno

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/8232 ,  H01L29/786 ,  C23C14/00 ,  C23C14/08 ,  C23C14/34 ,  H01L27/06 ,  H01L27/11521 ,  H01L27/11551 ,  H01L27/1156 ,  H01L49/02 ,  H01L29/49 ,  H01L29/66

Abstract: An object is to provide a deposition method in which a gallium oxide film is formed by a DC sputtering method. Another object is to provide a method for manufacturing a semiconductor device using a gallium oxide film as an insulating layer such as a gate insulating layer of a transistor. An insulating film is formed by a DC sputtering method or a pulsed DC sputtering method, using an oxide target including gallium oxide (also referred to as GaOX). The oxide target includes GaOX, and X is less than 1.5, preferably more than or equal to 0.01 and less than or equal to 0.5, further preferably more than or equal to 0.1 and less than or equal to 0.2. The oxide target has conductivity, and sputtering is performed in an oxygen gas atmosphere or a mixed atmosphere of an oxygen gas and a rare gas such as argon.

公开(公告)号：US10418384B2

公开(公告)日：2019-09-17

申请号：US15957318

申请日：2018-04-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Toshinari Sasaki ,  Junichiro Sakata ,  Masashi Tsubuku

IPC: H01L29/10 ,  H01L29/12 ,  H01L27/12 ,  H01L29/45 ,  H01L29/786 ,  H01L29/24 ,  H01L29/423 ,  H01L29/49 ,  H01L27/32

Abstract: It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.

公开(公告)号：US10332996B2

公开(公告)日：2019-06-25

申请号：US14958066

申请日：2015-12-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroki Ohara

IPC: H01L29/78 ,  H01L29/786 ,  H01L29/49 ,  H01L21/28 ,  H01L21/324 ,  H01L29/66

Abstract: A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.

公开(公告)号：US10141343B2

公开(公告)日：2018-11-27

申请号：US15480560

申请日：2017-04-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunichi Ito ,  Toshinari Sasaki ,  Miyuki Hosoba ,  Junichiro Sakata

IPC: H01L27/12 ,  H01L29/24 ,  H01L29/786 ,  H01L29/66

Abstract: An object is to control composition and a defect of an oxide semiconductor, another object is to increase a field effect mobility of a thin film transistor and to obtain a sufficient on-off ratio with a reduced off current. A solution is to employ an oxide semiconductor whose composition is represented by InMO3(ZnO)m, where M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al, and m is preferably a non-integer number of greater than 0 and less than 1. The concentration of Zn is lower than the concentrations of In and M. The oxide semiconductor has an amorphous structure. Oxide and nitride layers can be provided to prevent pollution and degradation of the oxide semiconductor.

公开(公告)号：US10109500B2

公开(公告)日：2018-10-23

申请号：US15664383

申请日：2017-07-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroki Ohara

IPC: H01L21/465 ,  H01L29/66 ,  H01L21/28 ,  H01L29/04 ,  H01L29/786 ,  H01L21/02 ,  H01L21/477

Abstract: A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.

公开(公告)号：US10103272B2

公开(公告)日：2018-10-16

申请号：US14886723

申请日：2015-10-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro Sakata ,  Tetsunori Maruyama ,  Yuki Imoto

IPC: H01L29/12 ,  H01L29/786 ,  H01L27/12 ,  H01L29/24

Abstract: Many of the physical properties of a silicon semiconductor have already been understood, whereas many of the physical properties of an oxide semiconductor have been still unclear. In particular, an adverse effect of an impurity on an oxide semiconductor has been still unclear. In view of the above, a structure is disclosed in which an impurity that influences electrical characteristics of a semiconductor device including an oxide semiconductor layer is prevented or is eliminated. A semiconductor device which includes a gate electrode, an oxide semiconductor layer, and a gate insulating layer provided between the gate electrode and the oxide semiconductor layer and in which the nitrogen concentration in the oxide semiconductor layer is 1×1020 atoms/cm3 or less is provided.

公开(公告)号：US09837441B2

公开(公告)日：2017-12-05

申请号：US15096663

申请日：2016-04-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro Sakata ,  Toshinari Sasaki ,  Miyuki Hosoba

IPC: H01L21/00 ,  H01L21/16 ,  H01L27/12 ,  H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L29/24

CPC classification number: H01L27/1225 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/127 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78633 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78654 ,  H01L29/7869 ,  H01L29/78696

Abstract: An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least a transistor which is applied to a driver circuit. In manufacture of a transistor in which an oxide semiconductor layer is used for a channel formation region, the oxide semiconductor layer is subjected to heat treatment so as to be dehydrated or dehydrogenated; thus, impurities such as moisture existing in an interface between the oxide semiconductor layer and the gate insulating layer provided below and in contact with the oxide semiconductor layer and an interface between the oxide semiconductor layer and a protective insulating layer provided on and in contact with the oxide semiconductor layer can be reduced.

公开(公告)号：US09698008B2

公开(公告)日：2017-07-04

申请号：US14680159

申请日：2015-04-07

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Makoto Furuno

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/8232 ,  H01L29/786 ,  C23C14/00 ,  C23C14/08 ,  C23C14/34 ,  H01L27/06 ,  H01L27/11521 ,  H01L27/11551 ,  H01L27/1156 ,  H01L49/02 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L21/02266 ,  C23C14/0036 ,  C23C14/08 ,  C23C14/3407 ,  C23C14/3414 ,  H01L21/02112 ,  H01L21/8232 ,  H01L27/0688 ,  H01L27/11521 ,  H01L27/11551 ,  H01L27/1156 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/1251 ,  H01L28/60 ,  H01L29/4908 ,  H01L29/66477 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78645 ,  H01L29/7869

Abstract: An object is to provide a deposition method in which a gallium oxide film is formed by a DC sputtering method. Another object is to provide a method for manufacturing a semiconductor device using a gallium oxide film as an insulating layer such as a gate insulating layer of a transistor. An insulating film is formed by a DC sputtering method or a pulsed DC sputtering method, using an oxide target including gallium oxide (also referred to as GaOX). The oxide target includes GaOX, and X is less than 1.5, preferably more than or equal to 0.01 and less than or equal to 0.5, further preferably more than or equal to 0.1 and less than or equal to 0.2. The oxide target has conductivity, and sputtering is performed in an oxygen gas atmosphere or a mixed atmosphere of an oxygen gas and a rare gas such as argon.

公开(公告)号：US09647137B2

公开(公告)日：2017-05-09

申请号：US14822995

申请日：2015-08-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunichi Ito ,  Toshinari Sasaki ,  Miyuki Hosoba ,  Junichiro Sakata

IPC: H01L29/10 ,  H01L29/12 ,  H01L29/786 ,  H01L27/12 ,  H01L29/45 ,  G09G3/20

CPC classification number: H01L27/1225 ,  G09G3/20 ,  H01L27/1248 ,  H01L27/1259 ,  H01L29/247 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: An object is to control composition and a defect of an oxide semiconductor, another object is to increase a field effect mobility of a thin film transistor and to obtain a sufficient on-off ratio with a reduced off current. A solution is to employ an oxide semiconductor whose composition is represented by InMO3(ZnO)m, where M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al, and m is preferably a non-integer number of greater than 0 and less than 1. The concentration of Zn is lower than the concentrations of In and M. The oxide semiconductor has an amorphous structure. Oxide and nitride layers can be provided to prevent pollution and degradation of the oxide semiconductor.