公开(公告)号：US10529556B2

公开(公告)日：2020-01-07

申请号：US15636744

申请日：2017-06-29

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Makoto Furuno

IPC分类号： H01L27/12 ,  H01L21/02 ,  H01L21/8232 ,  H01L29/786 ,  C23C14/00 ,  C23C14/08 ,  C23C14/34 ,  H01L27/06 ,  H01L27/11521 ,  H01L27/11551 ,  H01L27/1156 ,  H01L49/02 ,  H01L29/49 ,  H01L29/66

摘要： An object is to provide a deposition method in which a gallium oxide film is formed by a DC sputtering method. Another object is to provide a method for manufacturing a semiconductor device using a gallium oxide film as an insulating layer such as a gate insulating layer of a transistor. An insulating film is formed by a DC sputtering method or a pulsed DC sputtering method, using an oxide target including gallium oxide (also referred to as GaOX). The oxide target includes GaOX, and X is less than 1.5, preferably more than or equal to 0.01 and less than or equal to 0.5, further preferably more than or equal to 0.1 and less than or equal to 0.2. The oxide target has conductivity, and sputtering is performed in an oxygen gas atmosphere or a mixed atmosphere of an oxygen gas and a rare gas such as argon.

公开(公告)号：US09698008B2

公开(公告)日：2017-07-04

申请号：US14680159

申请日：2015-04-07

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Makoto Furuno

IPC分类号： H01L27/12 ,  H01L21/02 ,  H01L21/8232 ,  H01L29/786 ,  C23C14/00 ,  C23C14/08 ,  C23C14/34 ,  H01L27/06 ,  H01L27/11521 ,  H01L27/11551 ,  H01L27/1156 ,  H01L49/02 ,  H01L29/49 ,  H01L29/66

CPC分类号： H01L21/02266 ,  C23C14/0036 ,  C23C14/08 ,  C23C14/3407 ,  C23C14/3414 ,  H01L21/02112 ,  H01L21/8232 ,  H01L27/0688 ,  H01L27/11521 ,  H01L27/11551 ,  H01L27/1156 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/1251 ,  H01L28/60 ,  H01L29/4908 ,  H01L29/66477 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78645 ,  H01L29/7869

摘要： An object is to provide a deposition method in which a gallium oxide film is formed by a DC sputtering method. Another object is to provide a method for manufacturing a semiconductor device using a gallium oxide film as an insulating layer such as a gate insulating layer of a transistor. An insulating film is formed by a DC sputtering method or a pulsed DC sputtering method, using an oxide target including gallium oxide (also referred to as GaOX). The oxide target includes GaOX, and X is less than 1.5, preferably more than or equal to 0.01 and less than or equal to 0.5, further preferably more than or equal to 0.1 and less than or equal to 0.2. The oxide target has conductivity, and sputtering is performed in an oxygen gas atmosphere or a mixed atmosphere of an oxygen gas and a rare gas such as argon.

公开(公告)号：US20130337607A1

公开(公告)日：2013-12-19

申请号：US13975453

申请日：2013-08-26

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Makoto Furuno

IPC分类号： H01L29/66

CPC分类号： H01L21/02266 ,  C23C14/0036 ,  C23C14/08 ,  C23C14/3407 ,  C23C14/3414 ,  H01L21/02112 ,  H01L21/8232 ,  H01L27/0688 ,  H01L27/11521 ,  H01L27/11551 ,  H01L27/1156 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/1251 ,  H01L28/60 ,  H01L29/4908 ,  H01L29/66477 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78645 ,  H01L29/7869

摘要： An object is to provide a deposition method in which a gallium oxide film is formed by a DC sputtering method. Another object is to provide a method for manufacturing a semiconductor device using a gallium oxide film as an insulating layer such as a gate insulating layer of a transistor. An insulating film is formed by a DC sputtering method or a pulsed DC sputtering method, using an oxide target including gallium oxide (also referred to as GaOX). The oxide target includes GaOX, and X is less than 1.5, preferably more than or equal to 0.01 and less than or equal to 0.5, further preferably more than or equal to 0.1 and less than or equal to 0.2. The oxide target has conductivity, and sputtering is performed in an oxygen gas atmosphere or a mixed atmosphere of an oxygen gas and a rare gas such as argon.

公开(公告)号：US09006046B2

公开(公告)日：2015-04-14

申请号：US13975453

申请日：2013-08-26

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Makoto Furuno

IPC分类号： H01L21/00 ,  H01L29/66 ,  H01L27/06 ,  H01L29/49 ,  H01L27/115 ,  H01L27/12 ,  C23C14/00 ,  H01L21/02 ,  C23C14/08 ,  H01L49/02 ,  C23C14/34 ,  H01L29/786

CPC分类号： H01L21/02266 ,  C23C14/0036 ,  C23C14/08 ,  C23C14/3407 ,  C23C14/3414 ,  H01L21/02112 ,  H01L21/8232 ,  H01L27/0688 ,  H01L27/11521 ,  H01L27/11551 ,  H01L27/1156 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/1251 ,  H01L28/60 ,  H01L29/4908 ,  H01L29/66477 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78645 ,  H01L29/7869

摘要： An object is to provide a deposition method in which a gallium oxide film is formed by a DC sputtering method. Another object is to provide a method for manufacturing a semiconductor device using a gallium oxide film as an insulating layer such as a gate insulating layer of a transistor. An insulating film is formed by a DC sputtering method or a pulsed DC sputtering method, using an oxide target including gallium oxide (also referred to as GaOX). The oxide target includes GaOX, and X is less than 1.5, preferably more than or equal to 0.01 and less than or equal to 0.5, further preferably more than or equal to 0.1 and less than or equal to 0.2. The oxide target has conductivity, and sputtering is performed in an oxygen gas atmosphere or a mixed atmosphere of an oxygen gas and a rare gas such as argon.

摘要翻译： 本发明的目的是提供一种通过DC溅射法形成氧化镓膜的沉积方法。 另一个目的是提供一种使用氧化镓膜作为绝缘层的半导体器件的制造方法，例如晶体管的栅极绝缘层。 使用包含氧化镓（也称为GaOX）的氧化物靶，通过DC溅射法或脉冲DC溅射法形成绝缘膜。 氧化物靶包括GaOX，X小于1.5，优选大于或等于0.01且小于或等于0.5，进一步优选大于或等于0.1且小于或等于0.2。 氧化物靶具有导电性，并且在氧气气氛或氧气和稀有气体如氩气的混合气氛中进行溅射。

公开(公告)号：US08987068B2

公开(公告)日：2015-03-24

申请号：US14080822

申请日：2013-11-15

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Shinji Maekawa ,  Makoto Furuno ,  Osamu Nakamura ,  Keitaro Imai

IPC分类号： H01L29/04 ,  H01L33/08 ,  G02F1/1368 ,  H01L21/768 ,  H01L27/12 ,  H01L29/66 ,  G02F1/1362

CPC分类号： H01L33/08 ,  G02F1/1368 ,  G02F2001/136295 ,  H01L21/76838 ,  H01L27/12 ,  H01L27/1285 ,  H01L27/1292 ,  H01L29/66765 ,  H01L2924/0002 ,  Y10T428/24421 ,  H01L2924/00

摘要： At least one or more of a conductive layer which forms a wiring or an electrode and a pattern necessary for manufacturing a display panel such as a mask for forming a predetermined pattern is formed by a method capable of selectively forming a pattern to manufacture a liquid crystal display device. A droplet discharge method capable of forming a predetermined pattern by selectively discharging a droplet of a composition in accordance with a particular object is used as a method capable of selectively forming a pattern in forming a conductive layer, an insulating layer, or the like.

摘要翻译： 通过能够选择性地形成图案以制造液晶的方法形成至少一个或多个形成布线或电极的导电层和制造用于形成预定图案的掩模等显示面板所需的图案 显示设备。 使用能够通过根据特定目的选择性地排出组合物的液滴来形成预定图案的液滴喷射方法作为能够在形成导电层，绝缘层等中选择性地形成图案的方法。

公开(公告)号：US08643182B2

公开(公告)日：2014-02-04

申请号：US13908047

申请日：2013-06-03

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Tomokazu Yokoi ,  Takayuki Inoue ,  Makoto Furuno

IPC分类号： H01L23/12

CPC分类号： H01L29/12 ,  H01M4/0428 ,  H01M4/134 ,  H01M4/366 ,  H01M4/386

摘要： Provided are a semiconductor film including silicon microstructures formed at high density, and a manufacturing method thereof. Further, provided are a semiconductor film including silicon microstructures whose density is controlled, and a manufacturing method thereof. Furthermore, a power storage device with improved charge-discharge capacity is provided. A manufacturing method in which a semiconductor film with a silicon layer including silicon structures is formed over a substrate with a metal surface is used. The thickness of a silicide layer formed by reaction between the metal and the silicon is controlled, so that the grain sizes of silicide grains formed at an interface between the silicide layer and the silicon layer are controlled and the shapes of the silicon structures are controlled. Such a semiconductor film can be applied to an electrode of a power storage device.

摘要翻译： 提供了包括以高密度形成的硅微结构的半导体膜及其制造方法。 此外，提供了包括其密度被控制的硅微结构的半导体膜及其制造方法。 此外，提供了具有改善的充放电容量的蓄电装置。 使用其中在具有金属表面的基板上形成具有包括硅结构的硅层的半导体膜的制造方法。 控制由金属与硅之间的反应形成的硅化物层的厚度，从而控制在硅化物层和硅层之间的界面处形成的硅化物晶粒的晶粒尺寸，并且控制硅结构的形状。 这样的半导体膜可以应用于蓄电装置的电极。

公开(公告)号：US09044793B2

公开(公告)日：2015-06-02

申请号：US13680187

申请日：2012-11-19

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Satoshi Toriumi ,  Makoto Furuno

IPC分类号： H01L21/00 ,  B08B7/04 ,  H01L21/20 ,  B08B7/00 ,  C23C16/44 ,  C23C16/02 ,  C23C16/26 ,  H01L29/16 ,  H01M10/052 ,  H01M4/131 ,  H01M4/62 ,  H01L29/66 ,  H01L29/778 ,  B82Y40/00

CPC分类号： B08B7/04 ,  B08B7/00 ,  B08B7/0071 ,  B82Y40/00 ,  C23C16/0281 ,  C23C16/26 ,  C23C16/4405 ,  H01L21/20 ,  H01L29/1606 ,  H01L29/66431 ,  H01L29/7781 ,  H01M4/131 ,  H01M4/625 ,  H01M10/052 ,  Y02E60/122 ,  Y02P70/54

摘要： A method for cleaning a hot-wall type film formation apparatus having a batch processing system with industrially high mass productivity is provided. In the method, a carbon film deposited on an inner wall or the like of a reaction chamber of the apparatus is removed efficiently in a short time. To remove the carbon film deposited on the inner wall of the reaction chamber by a thermal CVD method, the reaction chamber is heated at a temperature higher than or equal to 700° C. and lower than or equal to 800° C., and oxygen is introduced into the reaction chamber.

摘要翻译： 提供一种清洗具有工业上高质量生产率的批处理系统的热壁型成膜装置的方法。 在该方法中，在短时间内有效地除去沉积在装置的反应室的内壁等上的碳膜。 为了通过热CVD法除去沉积在反应室内壁上的碳膜，将反应室在高于或等于700℃且低于或等于800℃的温度下加热，并将氧气 被引入到反应室中。