公开(公告)号：US11152513B2

公开(公告)日：2021-10-19

申请号：US16643453

申请日：2018-08-24

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Yoshinobu Asami ,  Takahisa Ishiyama ,  Motomu Kurata ,  Ryo Tokumaru ,  Noritaka Ishihara ,  Yusuke Nonaka

IPC: H01L29/786 ,  H01L29/22 ,  H01L29/66

Abstract: A semiconductor device with favorable reliability is provided. The semiconductor device includes a first insulator; a second insulator positioned over the first insulator; an oxide positioned over the second insulator; a first conductor and a second conductor positioned apart from each other over the oxide; a third insulator positioned over the oxide, the first conductor, and the second conductor; a third conductor positioned over the third insulator and at least partly overlapping with a region between the first conductor and the second conductor; a fourth insulator positioned to cover the oxide, the first conductor, the second conductor, the third insulator, and the third conductor; a fifth insulator positioned over the fourth insulator; and a sixth insulator positioned over the fifth insulator. An opening reaching the second insulator is formed in at least part of the fourth insulator; the fifth insulator is in contact with the second insulator through the opening; and the first insulator, the fourth insulator, and the sixth insulator have a lower oxygen permeability than the second insulator.

公开(公告)号：US20210313355A1

公开(公告)日：2021-10-07

申请号：US17267210

申请日：2019-08-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Koji KUSUNOKI ,  Shingo EGUCHI

IPC: H01L27/12

Abstract: A highly reliable display apparatus is provided.
In an EL display apparatus including a specific pixel having a function of adding data, a storage node is provided in the pixel, and first data can be held in the storage node. In the pixel, second data is added to the first data through capacitive coupling, whereby third data can be generated. A light-emitting device operates in accordance with the third data. In the pixel, a light-emitting device that requires a high voltage for light emission or a light-emitting device to which application of a high voltage is preferred is provided.

公开(公告)号：US11139359B2

公开(公告)日：2021-10-05

申请号：US15296270

申请日：2016-10-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Rihito Wada ,  Yoko Chiba

IPC: H01L27/32 ,  H01L29/786 ,  H01L27/12 ,  H01L51/52

Abstract: A display device includes a pixel portion in which a pixel is arranged in a matrix, the pixel including an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen and having a channel protective layer over a semiconductor layer to be a channel formation region overlapping a gate electrode layer and a pixel electrode layer electrically connected to the inverted staggered thin film transistor. In the periphery of the pixel portion in this display device, a pad portion including a conductive layer made of the same material as the pixel electrode layer is provided. In addition, the conductive layer is electrically connected to a common electrode layer formed on a counter substrate.

公开(公告)号：US11107838B2

公开(公告)日：2021-08-31

申请号：US16391877

申请日：2019-04-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Hiroyuki Miyake

IPC: H01L27/12 ,  H01L29/04 ,  H01L29/417 ,  H01L29/423 ,  H01L29/10 ,  H01L29/45 ,  H01L29/24 ,  G09G3/20 ,  G11C19/28 ,  H01L29/786 ,  H01L27/32

Abstract: An object of an embodiment of the present invention is to manufacture a semiconductor device with high display quality and high reliability, which includes a pixel portion and a driver circuit portion capable of high-speed operation over one substrate, using transistors having favorable electric characteristics and high reliability as switching elements. Two kinds of transistors, in each of which an oxide semiconductor layer including a crystalline region on one surface side is used as an active layer, are formed in a driver circuit portion and a pixel portion. Electric characteristics of the transistors can be selected by choosing the position of the gate electrode layer which determines the position of the channel. Thus, a semiconductor device including a driver circuit portion capable of high-speed operation and a pixel portion over one substrate can be manufactured.

公开(公告)号：US11106101B2

公开(公告)日：2021-08-31

申请号：US16867620

申请日：2020-05-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Miyuki Hosoba ,  Junichiro Sakata ,  Hideaki Kuwabara

IPC: H01L29/786 ,  H01L27/12 ,  G02F1/1362 ,  H01L29/66 ,  H01L29/45 ,  H01L29/51 ,  H01L27/32 ,  G02F1/167 ,  G02F1/136 ,  G02F1/1339 ,  G02F1/1343 ,  G02F1/1345 ,  G02F1/1368 ,  G09G3/34 ,  G09G3/36

Abstract: An object is to provide a semiconductor device having a structure in which parasitic capacitance between wirings can be efficiently reduced. In a bottom gate thin film transistor using an oxide semiconductor layer, an oxide insulating layer used as a channel protection layer is formed above and in contact with part of the oxide semiconductor layer overlapping with a gate electrode layer, and at the same time an oxide insulating layer covering a peripheral portion (including a side surface) of the stacked oxide semiconductor layer is formed. Further, a source electrode layer and a drain electrode layer are formed in a manner such that they do not overlap with the channel protection layer. Thus, a structure in which an insulating layer over the source electrode layer and the drain electrode layer is in contact with the oxide semiconductor layer is provided.

公开(公告)号：US11101460B2

公开(公告)日：2021-08-24

申请号：US16263134

申请日：2019-01-31

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Tomoya Futamura ,  Tamae Moriwaka

IPC: H01M4/26 ,  H01M4/36 ,  H01M4/131 ,  H01M4/485 ,  H01M4/58 ,  H01M4/62 ,  H01M10/0525 ,  H01M4/133 ,  H01M4/136 ,  H01M4/587 ,  H01M4/02

Abstract: To provide a lithium-ion secondary battery having higher discharge capacity and higher energy density and a manufacturing method thereof. The lithium-ion secondary battery includes a positive electrode, a negative electrode, and an electrolyte provided between the positive electrode and the negative electrode. The positive electrode includes a positive electrode current collector and a positive electrode active material layer provided over the positive electrode current collector. In the positive electrode active material layer, graphenes and lithium-containing composite oxides are alternately provided. The lithium-containing composite oxide is a flat single crystal particle in which the length in the b-axis direction is shorter than each of the lengths in the a-axis direction and the c-axis direction. Further, the lithium-containing composite oxide is provided over the positive electrode current collector so that the b-axis of the single crystal particle intersects with a surface of the positive electrode current collector.

公开(公告)号：US11101444B2

公开(公告)日：2021-08-24

申请号：US16514141

申请日：2019-07-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Daiki Nakamura ,  Yusuke Nishido

IPC: H01L51/52 ,  H01L51/50 ,  H01L27/32

Abstract: A sealed structure which has high sealing capability and whose border can be slim is provided. The sealed structure includes a pair of substrates whose respective surfaces face each other with a space therebetween, and a glass layer which is in contact with the substrates, defines a space between the substrates, and has at least one corner portion and side portions in continuity with the corner portion. The width of the corner portion of the glass layer is smaller than or equal to that of the side portion of the same. The sealed structure may comprise a highly reliable light-emitting element including a layer containing a light-emitting organic compound provided between a pair of electrodes.

公开(公告)号：US11101386B2

公开(公告)日：2021-08-24

申请号：US16634493

申请日：2018-07-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Daisuke Matsubayashi ,  Ryota Hodo ,  Daigo Ito ,  Hiroaki Honda ,  Satoru Okamoto

IPC: H01L29/786 ,  G11C11/4091 ,  H01L27/108 ,  H01L27/105 ,  H01L27/12 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/24 ,  H01L29/417

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide; a first conductor and a second conductor over the oxide; a third conductor over the oxide; a first insulator provided between the oxide and the third conductor and covering a side surface of the third conductor; a second insulator over the third conductor and the first insulator; a third insulator positioned over the first conductor and at a side surface of the second insulator; a fourth insulator positioned over the second conductor and at a side surface of the second insulator; a fourth conductor being in contact with a top surface and a side surface of the third insulator and electrically connected to the first conductor; and a fifth conductor being in contact with a top surface and a side surface of the fourth insulator and electrically connected to the second conductor. The first insulator is between the third insulator and the third conductor, and between the fourth insulator and the third conductor.

公开(公告)号：US11095763B2

公开(公告)日：2021-08-17

申请号：US16216232

申请日：2018-12-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yoshiharu Hirakata ,  Tomoya Aoyama ,  Akihiro Chida

IPC: H01L27/32 ,  H01L51/00 ,  H01L51/50 ,  H01L51/52 ,  G06F3/041 ,  H04B1/38 ,  H04M1/02 ,  H04B1/3888

Abstract: A light-emitting device or a display device that is less likely to be broken is provided. Provided is a light-emitting device including an element layer and a substrate over the element layer. At least a part of the substrate is bent to the element layer side. The substrate has a light-transmitting property and a refractive index that is higher than that of the air. The element layer includes a light-emitting element that emits light toward the substrate side. Alternatively, provided is a light-emitting device including an element layer and a substrate covering a top surface and at least one side surface of the element layer. The substrate has a light-transmitting property and a refractive index that is higher than that of the air. The element layer includes a light-emitting element that emits light toward the substrate side.

公开(公告)号：US11081505B2

公开(公告)日：2021-08-03

申请号：US17029098

申请日：2020-09-23

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masayuki Sakakura ,  Shunpei Yamazaki

IPC: H01L27/12 ,  H01L27/32 ,  H01L29/786 ,  G02F1/1362 ,  G02F1/1368 ,  G09G3/20 ,  G09G3/36 ,  H01L27/02 ,  G02F1/1333 ,  G02F1/1339 ,  G02F1/1343

Abstract: An insulating film provided between adjacent pixels is referred to as a bank, a partition, a barrier, an embankment or the like, and is provided above a source wiring or a drain wiring for a thin film transistor, or a power supply line. In particular, at an intersection portion of these wirings provided in different layers, a larger step is formed there than in other portions. Even when the insulating film provided between adjacent pixels is formed by a coating method, thin portions are problematically partially formed due to this step and the withstand pressure is reduced. In the present invention, a dummy material is arranged near the large step portion, particularly, around the intersection portion of wirings, so as to alleviate unevenness formed thereover. The upper wiring and the lower wiring are arranged in a misaligned manner so as not to align the end portions.