摘要:
A lithographic method of manufacturing a miniaturized device using a projection exposure system involves illuminating the object plane of an imaging optics of the projection exposure system with measuring light; detecting, for each of a plurality of locations on an image plane of the imaging optics, an angular distribution of an intensity of the measuring light traversing the image plane at the respective location; adjusting a telecentricity of the projection exposure system based on a selected patterning structure to be imaged and on the plurality of the detected angular distributions; disposing the selected pattern structure to be imaged in a region of the object plane; disposing a substrate carrying a resist in a region of the image plane and exposing the resist with imaging light using the projection exposure system with the adjusted telecentricity; and developing the exposed resist and processing the substrate with the developed resist.
摘要:
In a method for improving imaging properties of an illumination system or a projection objective of a microlithographic projection exposure apparatus, which comprises an optical element having a surface, the shape of the surface is measured directly at various points. To this end, a measuring beam is directed on the points, and the reflected or refracted beam is measured, e.g. using an interferometer. Based on deviations of the measured shape from a target shape, corrective measures are derived so that the imaging errors of the optical system are improved. The corrective measures may comprise a change in the position or the shape of the optical element being analyzed, or another optical element of the optical system. The target shape of the surface may, for example, be determined so that the optical element at least partially corrects imaging errors caused by other optical elements.
摘要:
The disclosure relates to a microlithographic projection exposure apparatus, such as are used for the production of large-scale integrated electrical circuits and other microstructured components. The disclosure relates in particular to coatings of optical elements in order to increase or reduce the reflectivity.
摘要:
In a method for improving the imaging properties of a projection objective of a microlithographic projection exposure apparatus, an appropriate illumination angle distribution adapted to a mask (24; 224) to be projected is selected. Then locations (40a, 40b; 60a, 60b; 80a, 80b, 80c) in an exit pupil of the projection objective (20), which are illuminated under these conditions by projection light during a projection of the mask, are determined. For at least one image point, an actual value of an imaging quantity, e.g. a wavefront profile or a polarization state, is determined that influences the imaging properties of the projection objective. Finally, corrective measures are calculated such that the actual value of the imaging quantity approximates a desired value at these locations. In this last step, however, deviations of the actual value from the desired value are taken into account exclusively at said locations illuminated in the exit pupil.
摘要:
The invention relates to an optical system, in particular an objective or an illumination system for a microlithographic projection exposure apparatus, which in particular also permits the use of crystal materials with a high refractive index while reducing the influence of intrinsic birefringence on the imaging properties. In particular the invention relates to an optical system having at least two lens groups (10-60) with lenses of intrinsically birefringent material, wherein the lens groups (10-60) respectively comprise a first subgroup with lenses in a (100)-orientation and a second subgroup with lenses in (111)-orientation, and wherein the lenses of each subgroup are arranged rotated relative to each other about their lens axes.
摘要:
A projection exposure apparatus has a projection lens (10) with an object plane (34), an image plane, an optical axis (28) and a non-telecentric entrance pupil (32). The apparatus further comprises an illumination system (12) having an intermediate field plane (80) and a field stop (36; 36). The field stop is positioned in or in close proximity to the intermediate field plane (80) and defines an illuminated field (14) in the object plane (34) that does not contain the optical axis (28) of the projection lens (24). The illumination system (12) is configured such that, in the object plane (34), a mean of the angles formed between all principal rays (42) emanating from the intermediate field plane (80) on the one hand and the optical axis (28) of the projection lens (24) on the other hand differs from 0°.
摘要:
A microlithographic projection exposure apparatus comprises a projection objective which images an object onto an image plane and has a lens with a curved surface. In the projection objective there is a liquid or solid medium which directly adjoins the curved surface over a region which is usable for imaging the object. The projection exposure apparatus also has an adjustable manipulator for reducing an image field curvature which is caused by heating of the medium during the projection operation.
摘要:
Imaging system of a microlithographic projection exposure apparatus with a projection objective (200, 300, 500, 600) that serves to project an image of a mask which can be set into position in an object plane onto a light-sensitive coating layer which can be set into position in an image plane, and with a liquid-delivery device (205) serving to fill immersion liquid (202, 310, 507) into an interstitial space between the image plane and a last optical element (201, 309, 506) on the image-plane side of the projection objective; wherein the last optical element on the image-plane side of the projection objective is arranged so that, seen in the direction of gravity, it follows the image plane; and wherein the projection objective is configured in such a way that when the system is operating with immersion, the immersion liquid has at least in some areas a convex-curved surface facing in the direction away from the image plane. It is also proposed for the last optical element (201, 309, 506) on the image-plane side of the projection objective to be arranged below the image plane in such a way that the immersion liquid (202, 310, 507, 601) is held at least in part in a substantially tub-shaped area on the last optical element on the image-plane side. Also, a rotator can be provided which serves to rotate a substrate carrying the light-sensitive coating (401) between a transport orientation in which the light-sensitive coating lies on a substrate surface that faces against the direction of gravity and an exposure orientation in which the light-sensitive coating (401) lies on a substrate surface that faces in the direction of gravity.
摘要:
An optical imaging system for inspection microscopes with which lithography masks can be checked for defects particularly through emulation of high-aperture scanner systems. The microscope imaging system for emulating high-aperture imaging systems comprises imaging optics, a detector and an evaluating unit, wherein polarizing optical elements are selectively arranged in the illumination beam path for generating different polarization states of the illumination beam and/or in the imaging beam path for selecting different polarization components of the imaging beam, an optical element with a polarization-dependent intensity attenuation function can be introduced into the imaging beam path, images of the mask and/or sample are received by the detector for differently polarized beam components and are conveyed to the evaluating unit for further processing.
摘要:
An objective for a microlithography projection system has at least one fluoride crystal lens. The effects of birefringence, which are detrimental to the image quality, are reduced if the lens axis of the crystal lens is oriented substantially perpendicular to the {100}-planes or {100}-equivalent crystallographic planes of the fluoride crystal. If two or more fluoride crystal lenses are used, they should have lens axes oriented in the (100)-, (111)-, or (110)-direction of the crystallographic structure, and they should be oriented at rotated positions relative to each other. The birefringence-related effects are further reduced by using groups of mutually rotated (100)-lenses in combination with groups of mutually rotated (111)- or (110)-lenses. A further improvement is also achieved by applying a compensation coating to at least one optical element of the objective.