Abstract:
Light is directed to a VA (Vertical Alignment) liquid crystal panel whose optical axis is in a direction perpendicular to the panel surface in such a manner that the light is incident obliquely on the VA liquid crystal panel surface, by which birefringence that results only from the liquid crystal layer is artificially generated so that measurement of the thickness (cell gap) of the VA liquid crystal is accurately performed.
Abstract:
A transparent flow channel fluidly communicates a fluid source and a collection reservoir. A light beam passes through a first polarizer having a first plane of polarization. The flow channel is orthogonal to the light beam. The light beam passes through a fluid sample as it flows through the flow channel. The light beam is then filtered through a second polarizer having a second plane of polarization rotated 90° from the first plane of polarization. The birefringence of certain crystalline materials present in the fluid sample rotates the plane of polarization of the light beam. The presence of these microcrystals thus causes a component of the beam to pass through the second polarizer and impinge an electronic photo-detector located in the path of the beam. The photo-detector signals the presence of the microcrystals by generating voltage pulses. A display device visually presents the quantitative results of the assay.
Abstract:
Before the diffraction from a diffracting structure on a semiconductor wafer is measured, where necessary, the film thickness and index of refraction of the films underneath the structure are first measured using spectroscopic reflectometry or spectroscopic ellipsometry. A rigorous model is then used to calculate intensity or ellipsometric signatures of the diffracting structure. The diffracting structure is then measured using a spectroscopic scatterometer using polarized and broadband radiation to obtain an intensity or ellipsometric signature of the diffracting structure. Such signature is then matched with the signatures in the database to determine the grating shape parameters of the structure.
Abstract:
A substrate is etched in a process zone by placing the substrate in the process zone, providing an energized process gas in the process zone, and exhausting the process gas. A first stage of the etching process is monitored to determine completion of the first stage by detecting the intensities of one or more wavelengths of a radiation emission generated by the energized gas, generating a first signal in relation to the detected intensities, and evaluating the first signal. A second stage of the etching process is monitored to determine completion of the second stage by detecting the intensities of one or more wavelengths of a polarized radiation reflected from the substrate being etched, generating a second signal in relation to the detected intensities, and evaluating the second signal.
Abstract:
A quantity of modulation of brightness of bright display with respect to dark display is determined by obtaining a Mueller matrix regarding light since immediately before incidence to an optically anisotropic object until immediately after outgoing therefrom. It is possible to provide a method for evaluating optical modulation characteristics of a liquid crystal modulation element, in which: an index indicative of the brightness modulation quantity as an optical modulation characteristic of the liquid crystal modulation element is expressed by a general method that does not depend on the number of design parameters of optical elements to be finally determined; therefore, a value of the optical characteristic can be simply determined; and consequently conditions of design parameters necessary for optimizing the optical modulation characteristics and providing satisfactory optical modulation can be easily found.
Abstract:
A method and apparatus for characterizing and screening an array of material samples is disclosed. The apparatus includes a sample block having a plurality of regions for containing the material samples, a polarized light source to illuminate the materials, an analyzer having a polarization direction different than the polarization direction of the polarized light source, and a detector for analyzing changes in the intensity of the light beams. The light source, together with a polarizer, may include a plurality of light beams to simultaneously illuminate the entire array of materials with linearly polarized light so that characterization and screening can be performed in parallel. In addition, the materials in the sample block maybe subjected to different environmental conditions or mechanical stresses, and the detector analyzes the array as a function of the different environmental conditions or mechanical stresses.
Abstract:
An optical measurement system for evaluating a reference sample that has at least a partially known composition. The optical measurement system includes a reference ellipsometer and at least one non-contact optical measurement device. The reference ellipsometer includes a light generator, an analyzer and a detector. The light generator generates a beam of quasi-monochromatic light having a known wavelength and a known polarization for interacting with the reference sample. The beam is directed at a non-normal angle of incidence relative to the reference sample to interact with the reference sample. The analyzer creates interference between the S and P polarized components in the light beam after the light beam has interacted with reference sample. The detector measures the intensity of the light beam after it has passed through the analyzer. A processor determines the polarization state of the light beam entering the analyzer from the intensity measured by the detector, and determines an optical property of the reference sample based upon the determined polarization state, the known wavelength of light from the light generator and the composition of the reference sample. The processor also operates the optical measurement device to measure an optical parameter of the reference sample. The processor calibrates the optical measurement device by comparing the measured optical parameter from the optical measurement device to the determined optical property from the reference ellipsometer.
Abstract:
A practical system and method for measuring waveplate retardation. The system employs a photoelastic modulator (22) in an optical setup and provides high sensitivity. The analysis is particularly appropriate for quality-control testing of waveplates (26). The system is also adaptable for slightly varying the retardation provided by a waveplate (26) or any other retarder device in a given optical setup. To this end, the waveplate (26) position may be precisely altered to introduce correspondingly precise adjustments of the retardation values that the waveplate (26) provides. The system is further refined to permit one to compensate for errors in the retardation measurements just mentioned. Such errors may be attributable to static birefringence present in the optical element of the photoelastic modulator (22) that is incorporated in the system.
Abstract:
Disclosed is the application of spatial filter(s) in rotating compensator ellipsometer systems prior to or after a sample system. The purpose is, for instance, to eliminate a radially outer annulus of a generally arbitrary Profile beam that presents with low intensity level irregular content, so that electromagnetic beam intensity is caused to quickly decay to zero as a function of radius.
Abstract:
Disclosed is a method of evaluating sample system anisotropic refractive indices, and orientations thereof with respect to an alignment surface, in multiple dimensions. The preferred method involves a sequence of steps which allows overcoming mathematical model parameter correlation during mathematical regression parameter evaluation, even though individually, steps of the present invention method wherein anisotropic refractive indices, or differences therebetween, are evaluated, require that only a relatively simple one dimensional data set be acquired.